Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.24, No.4 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (85 articles)

1683 - 1688	Performance improvement of flash memories with HfOxNy/SiO2 stack tunnel dielectrics Lai HY, Chang-Liao KS, Wang TK, Wang PK, Cheng CL
1689 - 1701	Synthesized processing techniques for monolithic integration of nanometer-scale hole type photonic band gap crystal with micrometer-scale microelectromechanical structures Teo SLHG, Liu AQ, Yu MB, Singh J
1702 - 1704	Si nanowires sheathed with thin diamondlike carbon films Qiu T, Wu XL, Yang LW, Shen PN, Zhang ZY, Siu GG, Chu PK
1705 - 1710	Impact of extension implant energy purity and angle on the electrical characteristics of a 65 nm device technology Gossmann HJL, Rubin L, Parrill T, Agarwal A
1711 - 1715	Influence of silicon nitride passivation on transport properties in InAlAs/InGaAs/InP composite channel high electron mobility transistor structures Liu YW, Wang H
1716 - 1723	Chemical bonding and interdiffusion in scaled down SiO2/Si3N4/SiO2 stacks with top oxide formed by thermal ed copyoxidation Saraf M, Edrei R, Akhvlediani R, Roizin Y, Shima-Edelstein R, Hoffman A
1724 - 1727	Soft mold and gasbag pressure mechanism for patterning submicron patterns onto a large concave substrate Cheng FS, Yang SY, Nian SC, Wang LA
1728 - 1733	Performance of organic thin-film transistors Marinov O, Deen MJ, Iniguez B
1734 - 1738	Structural and magnetic properties of (Ga,Mn)As/AlAs multiple quantum wells grown by low-temperature molecular beam epitaxy Kolovos-Vellianitis D, Herrmann C, Trampert A, Daweritz L, Ploog KH
1739 - 1745	On microscopic compositional and electrostatic properties of grain boundaries in polycrystalline CuIn1-xGaxSe2 Hetzer MJ, Strzhemechny YM, Gao M, Goss S, Contreras MA, Zunger A, Brillson LJ
1746 - 1754	Interactive relationships between sidewall and bottom etch rates, as-affected by sidewall angle, during SiO2 etching in a CHF3 plasma Min JH, Lee JK, Moon SH, Kim CK
1755 - 1761	Modification of polymethylmethacrylate by deep ultraviolet radiation and bromination for photonic applications Henzi P, Bade K, Rabus DG, Mohr J
1762 - 1765	Efficacy of ECR-CVD silicon nitride passivation in InGaP/GaAs HBTs Zoccal LB, Diniz JA, Doi I, Swart JW, Daltrini AM, Moshkalyov SA
1766 - 1775	Focused ion beam sculpting curved shape cavities in crystalline and amorphous targets Adams DP, Vasile MJ, Mayer TM
1776 - 1779	Comparison of high resolution negative electron beam resists Bilenberg B, Scholer M, Shi P, Schmidt MS, Boggild P, Fink M, Schuster C, Reuther F, Gruetzner C, Kristensen A
1780 - 1784	Microfabrication of ultrahigh density wafer-level thin film compliant interconnects for through-silicon-via based chip stacks Arunasalam P, Ackler HD, Sammakia BG
1785 - 1793	Modeling and characterization of direct-tunneling current in dual-layer ultrathin-gate dielectric films Wong H, Iwai H
1794 - 1798	Dependence of field emission properties of carbon nanotube films on their graphitization Ting JH, Li TL, Hong YC
1799 - 1802	Improved Au Schottky contacts on GaAs using cryogenic metal deposition Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Herrero A, Gerger AM, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV
1803 - 1809	Silicon resonant microcantilevers for absolute pressure measurement Bianco S, Cocuzza M, Ferrero S, Giuri E, Piacenza G, Pirri CF, Ricci A, Scaltrito L, Bich D, Merialdo A, Schina P, Correale R
1810 - 1817	Gate etch process model for static random access memory bit cell and FinFET construction Stout PJ, Rauf S, Peters RD, Ventzek PLG
1818 - 1821	Postannealing effect on pseudobilayer HfO2/HfSixOy/Si gate oxides formed by an inductively coupled sputtering process Choi WJ, Lee EJ, Lee JH, Yang JY, Do YH, Hong JP
1822 - 1826	Absorbance measurement of polymers at extreme ultraviolet wavelength: Correlation between experimental and theoretical calculations Kwark YJ, Bravo-Vasquez JP, Chandhok M, Cao HD, Deng H, Gullikson E, Ober CK
1827 - 1832	Megasonic-assisted development of nanostructures Kupper D, Kupper D, Wahlbrink T, Bolten J, Lemme MC, Georgiev YM, Kurz H
1833 - 1836	Reaction mechanism of fluorinated chemically amplified resists Yamamoto H, Kozawa T, Okamoto K, Saeki A, Tagawa S, Ando T, Sato M, Komano H
1837 - 1843	Structure of sputtered nanocomposite CrCx/a-C : H thin films Gassner G, Patscheider J, Mayrhofer PH, Hegedus E, Toth L, Kovacs I, Pecz B, Srot V, Scheu C, Mitterer C
1844 - 1849	Effect of reverse flow by differential pressure on the protection of critical surfaces against particle contamination Kim JH, Fissan H, Asbach C, Yook SJ, Wang J, Pui DYH
1850 - 1858	Studies of plasma surface interactions during short time plasma etching of 193 and 248 nm photoresist materials Hua X, Engelmann S, Oehrlein GS, Jiang P, Lazzeri P, Iacob E, Anderle M
1859 - 1862	Impact of line edge roughness on copper interconnects Leunissen LHA, Zhang W, Wu W, Brongersma SH
1863 - 1868	Fabrication of submicrometer patterned two-dimensional electron gases by overgrowth of focused ion beam doped AlxGa1-xAs Reuter D, Riedesel C, Wieck AD
1869 - 1872	Process for 20 nm T gate on Al0.25Ga0.75As/In0.2Ga0.8As/GaAs epilayer using two-step lithography and zigzag foot Lee KS, Kim YS, Lee KT, Jeong YH
1873 - 1877	Low interface states and high dielectric constant Y2O3 films on Si substrates Alarcon-Flores G, Aguilar-Frutis M, Falcony C, Garcia-Hipolito M, Araiza-Ibarra JJ, Herrera-Suarez HJ
1878 - 1885	Negative transconductance region in the double-gated silicon field emitter arrays Chen LY, Akinwande AI
1886 - 1890	Slowdown in development of self-assembled InAs/GaAs(001) dots near the critical thickness Hanada T, Totsuka H, Hong SK, Godo K, Miyajima K, Goto T, Yao T
1891 - 1901	Gun lens theory for nonparaxial trajectories by canonical mapping transformation: Characterization of general skewed rays inside electron guns by electron gun focal length Fujita S, Shimoyama H
1902 - 1908	Shot noise models for sequential processes and the role of lateral mixing Neureuther AR, Pease RFW, Yuan L, Parizi KB, Esfandyarpour H, Poppe WJ, Liddle JA, Anderson EH
1909 - 1912	Fabrication and photoluminescence of InGaN-based nanorods fabricated by plasma etching with nanoscale nickel metal islands Huang HW, Chu JT, Hsueh TH, Ou-Yang MC, Kuo HC, Wang SC
1913 - 1917	Directed nucleation of ordered nanoparticle arrays on amorphous surfaces Coffee SS, Stanley SK, Ekerdt JG
1918 - 1921	Smoothing of polycrystalline copper with rough surface by oblique argon-ion irradiation Hino T, Nakai T, Nishikawa M, Hirohata Y, Yamauchi Y
1922 - 1924	1.32 mu m InAs/GaAs quantum-dot resonant-cavity light-emitting diodes grown by metalorganic chemical vapor deposition Huang KF, Lee FM, Hu CW, Peng TC, Wu MC, Lin CC, Hsieh TP, Chyi JI
1925 - 1933	Growth and application of highly ordered array of vertical nanoposts Kuo TF, Xu J
1934 - 1940	Study of nanoimprint pattern transfer on hydrogen silsesquioxane Chen SZ, Liu JF, Chen HJH, Huang FS
1941 - 1946	Three-dimensional nanochannels formed by fast etching of polymer Peng C, Pang SW
1947 - 1950	Microwave assisted patterning of vertically aligned carbon nanotubes onto polymer substrates Sunden E, Moon JK, Wong CP, King WP, Graham S
1951 - 1955	Field and electron trajectory modeling in the vicinity of an emitting tip Janik J, Balon F, Vinduska P, Danis T
1956 - 1956	Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier (vol 24, pg 1432, 2006) Lee CW, Kim YT
1959 - 1959	Papers from the 33rd Annual Conference on the Physics and Chemistry of Semiconductor Interfaces - Preface Lampert B, Aspnes D
1960 - 1966	PCSI 2006: Old problems and new visions Cooper L
1967 - 1971	Energy conversion from catalytic reaction to hot electron current with metal-semiconductor Schottky nanodiodes Park JY, Somorjai GA
1972 - 1976	Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure Kokawa T, Sato T, Hasegawa H, Hashizume T
1977 - 1986	Nature of high-temperature superconductivity Dow JD, Harshman DR
1987 - 1991	Complexities in modeling the metal to molecule interface Speyer G, Akis R, Ferry DK
1992 - 1996	First-principles calculations of dielectric constants for ultrathin Sio(2) films Wakui S, Nakamura J, Natori A
1997 - 2003	Self-consistent full band two-dimensional Monte Carlo two-dimensional Poisson device solver for modeling SiGe p-channel devices Krishnan S, Fischetti M, Vasileska D
2004 - 2008	Growth temperature dependent evolution of the interface structure in Co2FeSi/GaAs(001) hybrid structures Hashimoto M, Herfort J, Trampert A, Schonherr HP, Ploog KH
2009 - 2011	Ballistic electron transport properties of Fe-based films on Si(001) Stollenwerk AJ, Krause MR, Idell DH, Moore R, LaBella VP
2012 - 2017	Magnetic properties of epitaxial Co-doped anatase TlO2 thin films with excellent structural quality Kaspar TC, Droubay T, McCready DE, Nachimuthu P, Heald SM, Wang CM, Lea AS, Shutthanandan V, Chambers SA, Toney MF
2018 - 2023	Nonequilibrium phases in epitaxial Mn/GaAs interfacial reactions Farrell HH, Hilton JL, Schultz BD, Palmstrom CJ
2024 - 2028	Spin manipulation in a double quantum-dot-quantum-wire coupled system Sasaki S, Kang S, Kitagawa K, Yamaguchi M, Miyashita S, Maruyama T, Tamura H, Akazaki T, Hirayama Y, Takayanagi H
2029 - 2035	Radiative recombination during acoustically induced transport in GaAs quantum wells Alsina F, Stotz JAH, Hey R, Santos PV
2036 - 2040	Scanned electrical probe characterization of carrier transport behavior in InAs nanowires Zhou X, Dayeh SA, Aplin D, Wang D, Yu ET
2041 - 2046	Fabrication of single-crystalline insulator/Si/insulator nanostructures Fissel A, Kuhne D, Bugiel E, Osten HJ
2047 - 2052	Characterization of ZnO nanorod arrays fabricated on Si wafers using a low-temperature synthesis method Tak Y, Park D, Yong KJ
2053 - 2059	Calculation of critical dimensions for wurtzite and cubic zinc blende coaxial nanowire heterostructures Raychaudhuri S, Yu ET
2060 - 2068	Device interference in GaAs quantum wire transistors and its suppression by surface passivation using Si interface control layer Jia R, Hasegawa H, Shiozaki N, Kasai S
2069 - 2074	Stress evolution during ripening of self-assembled InAs/GaAs quantum dots Schaadt DM, Hu DZ, Ploog KH
2075 - 2079	Wavelength tuning of InAs/InP quantum dots: Control of As/P surface exchange reaction Notzel R, Anantathanasarn S, van Veldhoven PJ, van Otten FWM, Eijkemans TJ, Trampert A, Satpati B, Wolter JH
2080 - 2086	Oxidized GaN(0001) surfaces studied by scanning tunneling microscopy and spectroscopy and by first-principles theory Dong Y, Feenstra RM, Northrup JE
2087 - 2092	Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism Sato T, Oikawa T, Hasegawa H, Hashizume T
2093 - 2099	Ill-nitride growth and characteristics on ferroelectric materials using plasma-assisted molecular beam epitaxy Lee KK, Namkoong G, Doolittle WA, Losurdo M, Bruno G, Jundt DH
2100 - 2104	In situ growth regime characterization of AlN using reflection high energy electron diffraction Burnham SD, Doolittle WA
2105 - 2110	Molecular beam epitaxy of Sm2O3, Dy2O3, and Ho2O3 on Si (111) Craft HS, Collazo R, Sitar Z, Maria JP
2111 - 2114	Synthesis of polycrystalline ytterbium monoxide thin films by molecular beam deposition Losego MD, Maria JP
2115 - 2118	Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide Fissel A, Czernohorsky M, Osten HJ
2119 - 2123	Growth of a stacked silicon nitride/silicon oxide dielectric on Si (100) Bahari A, Morgen P, Pedersen K, Li ZS
2124 - 2131	Thermal diffusion of Co into atomically flat ZnO(000-1) surfaces investigated by scanning probe microscopies and low energy electron diffraction Dumont J, Seldrum T, Couet S, Moisson C, Turover D, Sporken R
2132 - 2137	Comparison of ultrathin SiO2/Si(100) and SiO2/Si(111) interfaces from soft x-ray photoelectron spectroscopy Ulrich MD, Rowe JE, Keister JW
2138 - 2143	Epitaxial Bi/GaAs diodes via electrodeposition Bao ZL, Kavanagh KL
2144 - 2147	Type-II InAs/GaSb superlattices grown on GaSb (311)B by molecular beam epitaxy for long-wavelength infrared applications Shao H, Li W, Torfi A, Moscicka D, Wang WI
2148 - 2155	Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism Kotani J, Kaneko M, Hasegawa H, Hashizume T
2156 - 2159	Spectroscopic ellipsometry characterization of ultrathin silicon-on-insulator films Price J, Diebold AC
2160 - 2168	Optical characterization of process-dependent charging in hafnium oxide structures Carriles R, Kwon J, An YQ, Sun L, Stanley SK, Ekerdt JG, Downer MC, Price J, Boescke T, Diebold AC
2169 - 2171	Cathodoluminescence spectra of surface-oxidized GaN crystallites Honda T, Akiyama M, Baba T, Watanabe M
2172 - 2177	Local photocurrent mapping as a probe of contact effects and charge carrier transport in semiconductor nanowire devices Gu Y, Romankiewicz JP, David JK, Lensch JL, Lauhon LJ, Kwak ES, Odom TW
2178 - 2183	Characterization of defects in the drift region of 4H-SiC pin diodes via optical beam induced current Caldwell JD, Stahlbush RE, Glembocki OJ, Liu KX, Hobart KD