L23 - L26 |
Band gap narrowing of ZnO : N films by varying rf sputtering power in O-2/N-2 mixtures Ahn KS, Yan Y, Ai-Jassim M |
L27 - L30 |
Glass nanostructures fabricated by soft thermal nanoimprint Peroz C, Heitz C, Barthel E, Sondergard E, Goletto V |
L31 - L34 |
Nanoimprint fabrication of polymer cell substrates with combined microscale and nanoscale topography Eliason MT, Charest JL, Simmons BA, Garcia AJ, King WP |
L35 - L38 |
Polymer through-hole membrane fabricated by nanoimprinting using metal molds with high aspect ratios Yanagishita T, Nishio K, Masuda H |
1123 - 1138 |
Long-term stability of Ru-based protection layers in extreme ultraviolet lithography: A surface science approach Over H, He YB, Farkas A, Mellau G, Korte C, Knapp M, Chandhok M, Fang M |
1139 - 1142 |
Etching SiO2 with HF/pyridine-supercritical carbon dioxide solutions and resultant interfacial electronic properties Li YX, Yang D, Jones CA, DeSimone JM, Irene EA |
1143 - 1146 |
Adsorption mechanism of aligned single wall carbon nanotubes at well defined metal surfaces Clair S, Rabot C, Kim Y, Kawai M |
1147 - 1151 |
Ultrahigh-resolution pattern using electron-beam lithography HF wet etching Tiron R, Mollard L, Louveau O, Lajoinie E |
1152 - 1155 |
Influence of substrate morphology on growth mode of thin organic films: An atomic force microscopy study Ribic PR, Bratina G |
1156 - 1160 |
Direct-write trilayer technology for Al-Al2O3-Cu superconductor-insulator-normal metal tunnel junction fabrication Otto E, Tarasov M, Kuzmin L |
1161 - 1165 |
Proton exchange and diffusion in LiNbO3 using inductance coupled high density plasma Ren Z, Heard PJ, Yu S |
1166 - 1170 |
Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma Biasotto C, Daltrini AM, Teixeira RC, Boscoli FA, Diniz JA, Moshkalev SA, Doi I |
1171 - 1174 |
Microfluidic encapsulated nanoelectromechanical resonators Aubin KL, Huang J, Park SM, Yang Y, Kondratovich M, Craighead HG, Ilic BR |
1175 - 1178 |
Influence of field emission on agglomerated carbon nanotubes in pastes Lee YD, Lee HJ, Lee YH, Ju BK |
1179 - 1185 |
Adhesion between template materials and UV-cured nanoimprint resists Houle FA, Guyer E, Miller DC, Dauskardt R |
1186 - 1190 |
Resonant cavity enhanced InAs/In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetector Attaluri RS, Shao J, Posani KT, Lee SJ, Brown JS, Stintz A, Krishnaa S |
1191 - 1196 |
Synthesis of carbon nanotubes: Controlled fabrication of intraconnects Katz D, Lee SW, Lopez D, Kornblit A, Grebel H |
1197 - 1202 |
Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials Ho YLD, Gibson R, Hu CY, Cryan MJ, Rarity JG, Heard PJ, Timpson JA, Fox AM, Skolnick MS, Hopkinson M, Tahraoui A |
1203 - 1206 |
Thermal stability of rare-earth based ultrathin Lu2O3 for high-k dielectrics Darmawan P, Lee PS, Setiawan Y, Lai JC, Yang P |
1207 - 1216 |
Spreading of thin-film metal patterns deposited on nonplanar surfaces using a shadow mask micromachined in Si (110) Tiggelaar RM, Berenschot JW, Elwenspoek MC, Gardeniers JGE, Dorsman R, Kleijn CR |
1217 - 1220 |
Epitaxial growth of (FeCo)(x)Ge1-x(001) He L, Collins BA, Tsui F, Zhong Y, Vogt S, Chu YS |
1221 - 1226 |
Conducting properties of suspended carbon nanotubes grown by thermal chemical vapor deposition Li TL, Ting JH, Yang BZ |
1227 - 1230 |
Conformal metal thin-film coatings in high-aspect-ratio trenches using a self-sputtered rf-driven plasma source Ji L, Kim JK, Ji Q, Leung KN, Chen Y, Gough RA |
1231 - 1235 |
Electrical characterization of Pt/AlGaN/GaN Schottky diodes grown using AlN template and their application to hydrogen gas sensors Miyoshi M, Kuraoka Y, Asai K, Shibata T, Tanaka M |
1236 - 1243 |
Ar+ bombardment of 193 nm photoresist: Morphological effects Pargon E, Nest D, Graves DB |
1244 - 1248 |
Low power and high speed phase-change memory devices with silicon-germanium heating layers Lee SY, Yoon SM, Park YS, Yu BG, Kim SH, Lee SH |
1249 - 1252 |
Field emission from randomly oriented ZnO nanowires Chang YQ, Chen KH, Zhang HZ, Qiang WJ, Long Y |
1253 - 1260 |
Capacitive and analytical approaches for the analysis of field emission from carbon nanotubes in a sphere-to-plane diode Boscolo I, Cialdi S, Fiori A, Orlanducci S, Sessa V, Terranova ML, Ciorba A, Rossi M |
1261 - 1264 |
Growth of carbon nanotubes with resist-assisted patterning process Park KC, Ryu JH, Kim KS, Yu YY, Jang J |
1265 - 1269 |
Dual-metal-gate-integration complementary metal oxide semiconductor process scheme using Ru positive-channel metal oxide semiconductor and TaC negative-channel metal oxide semiconductor gate electrodes Chang WT, Hsieh TE, Lee CJ |
1270 - 1275 |
Fermi gas energetics in low-dimensional metals of special geometry Tavkhelidze A, Svanidze V, Noselidze I |
1276 - 1279 |
Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth Zhu L, Martin M, Hollander M, Wang YQ, Chen Q, Ma K, Yu XK, Liu JR, Chu WK, Shao L |
1280 - 1283 |
Current spreading of III-nitride light-emitting diodes using plasma treatment Lee HY, Pan KH, Lin CC, Chang YC, Kao FJ, Lee CT |
1284 - 1287 |
High-performance, low-noise enhancement-mode pseudomorphic high-electron-mobility transistor with gate recession by citric acid/hydrogen peroxide selective etching Wang CC, Lin YJ, Huang HK, Wu CL, Chang CS, Wang YH |
1288 - 1297 |
Multiplexed mass spectrometry for real-time sensing in a spatially programmable chemical vapor deposition reactor Cai Y, Henn-Lecordier L, Rubloff GW, Sreenivasan R, Choo JO, Adomaitis RA |
1298 - 1304 |
Ultrathin decoupled plasma nitridation SiON gate dielectrics prepared with various rf powers Hu CY, Chen SC, Chen JF, Chang SJ, Wang MH, Yeh V, Chen JC |
1305 - 1309 |
Enhanced electrical and structural properties of stacked AlON/HfO2 gate oxides on p-type Si substrates Choi W, Lee J, Yang J, Kim J, Hong J |
1310 - 1314 |
Observation of fringelike electron-emission pattern in field emission from Pt field emitter fabricated by electron-beam-induced deposition Murakami K, Wakaya F, Takai M |
1315 - 1320 |
Fabrication of complementary metal-oxide-semiconductor compatible semiconducting yttrium barium copper oxide uncooled infrared microbolometer arrays Kumar S, Chitteboyina MM, Butler DP |
1321 - 1326 |
Microstructuring by microcontact printing and selective surface dewetting Benor A, Wagner V, Knipp D |
1327 - 1335 |
Fabrication and characterization of Si nanocrystals in SiC matrix produced by magnetron cosputtering Song D, Cho EC, Conibeer G, Cho YH, Huang Y, Huang S, Flynn C, Green MA |
1336 - 1339 |
Evaluation of new materials for plasmonic imaging lithography at 476 nm using near field scanning optical microscopy Backer SA, Suez I, Fresco ZM, Frechet JMJ, Conway JA, Vedantam S, Lee H, Yablonovitch E |
1340 - 1352 |
Analytic description of scanning capacitance microscopy Murray H, Germanicus R, Doukkali A, Martin P, Domenges B, Descamps P |
1353 - 1364 |
Plasma-surface interactions of model polymers for advanced photoresists using C4F8/Ar discharges and energetic ion beams Engelmann S, Bruce RL, Kwon T, Phaneuf R, Oehrlein GS, Bae YC, Andes C, Graves D, Nest D, Hudson EA, Lazzeri P, Lacob E, Anderle M |
1365 - 1375 |
Development of certified reference materials of ion-implanted dopants in silicon for calibration of secondary ion mass spectrometers Simons DS, Downing RG, Lamaze GP, Lindstrom RM, Greenberg RR, Paul RL, Schiller SB, Guthrie WF |
1376 - 1381 |
High aspect ratio Bosch etching of sub-0.25 mu m trenches for hyperintegration applications Wang X, Zeng W, Lu G, Russo OL, Eisenbraun E |
1382 - 1388 |
1.3 mu m Ga0.11In0.89As0.24P0.76/Ga0.27In0.73As0.67P0.33 compressive-strain multiple quantum well with n-type modulation-doped GalnP intermediate-barrier laser diodes Lei PH |
1389 - 1392 |
Investigation of heteroepitaxial growth of magnetite thin films Sterbinsky GE, Cheng J, Chiu PT, Wessels BW, Keavney DJ |
1393 - 1397 |
Precise patterning of SiO2-based glass by low-temperature nanoimprint lithography assisted by UV irradiation on both faces using Glasia (R) Okinaka M, Tsushima H, Ichinose Y, Watanabe E, Yanagisawa K, Tsukagoshi K, Aoyagi Y |
1398 - 1404 |
Real-time in situ flux monitoring in molecular beam epitaxy by wavelength-modulated atomic absorption spectroscopy Vignaud D |
1405 - 1411 |
Role of subsurface defects in metal-ZnO(0001) Schottky barrier formation Mosbacker HL, El Hage S, Gonzalez M, Ringel SA, Hetzer M, Look DC, Cantwell G, Zhang J, Song JJ, Brillson LJ |
1412 - 1415 |
Simple "solutal" method for preparing Teflon nanostructures and molds Kim MJ, Park JE, Song S, Lee HH |
1416 - 1419 |
Highly selective isotropic dry etch based nanofabrication Hussain MM, Gebara G, Sassman B, Lanee S, Larson L |
1420 - 1423 |
Extreme high vacuum field emission microscope for study on the inherent fluctuation of field emission Cho B, Itagaki T, Ishikawa T, Rokuta E, Oshima C |
1426 - 1426 |
Papers from the 34th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces - Preface Rowe J |
1427 - 1431 |
Analysis of local carrier modulation in InAs semiconductor nanowire transistors Zhou X, Dayeh SA, Wang D, Yu ET |
1432 - 1436 |
Transport properties of InAs nanowire field effect transistors: The effects of surface states Dayeh SA, Soci C, Yu PKL, Yu ET, Wang D |
1437 - 1440 |
Influence of interface roughness on quantum transport in nanoscale FinFET Khan H, Mamaluy D, Vasileska D |
1441 - 1447 |
Binding energy, vapor pressure, and melting point of semiconductor nanoparticles Farrell HH, Van Siclen CD |
1448 - 1452 |
Initial stages of GaP heteroepitaxy on nanoscopically roughened (001)SI Liu X, Kim IK, Aspnes DE |
1453 - 1459 |
Atomic ordering and interlayer diffusion Of Co2FeSi films grown on GaAs(001) studied by transmission electron microscopy Hashimoto M, Trampert A, Herfort J, Ploog KH |
1460 - 1466 |
Structural, optical, and magnetic properties of (Ga,Mn)As/AlAs multiple quantum well structures Ploog KH, Trampert A, Brandt O, Sapega VF |
1467 - 1469 |
Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy Xu JF, Liu SW, Xiao M, Thibado PM |
1470 - 1475 |
Magnetostructure of MnAs on GaAs revisited Bauer E, Belkhou R, Cherifi S, Locatelli A, Pavlovska A, Rougemaille N |
1476 - 1480 |
Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy Xu JF, Thibado PM, Awo-Affouda C, Ramos F, LaBella VP |
1481 - 1490 |
Formation of ultrathin SiNx/Si interface control double layer on (001) and (111) GaAs surfaces for ex situ,deposition of high-k dielectrics Akazawa M, Hasegawa H |
1491 - 1494 |
Metal gate HfO2 metal-oxide-semiconductor structures on InGaAs substrate with varying Si interface passivation layer and postdeposition anneal condition Ok I, Kim H, Zhang M, Zhu F, Park S, Yum J, Koveshnikov S, Tsai W, Tokranov V, Yakimov M, Oktyabrsky S, Lee JC |
1495 - 1503 |
Hydrogen sensing characteristics and mechanism of Pd/AlGaN/GaN Schottky diodes subjected to oxygen gettering Hasegawaa H, Akazawa M |
1504 - 1510 |
Functionalization and characterization of InAs and InP surfaces with hemin Garcia MA, Losurdo M, Wolter SD, Kim TH, Lampert WV, Bonaventura J, Bruno G, Giangregorio M, Brown A |
1511 - 1515 |
Atomic structure of Si(5512)-2X1: Confirmation of the structural model having two kinds of chains through homoepitaxy at 550 degrees C Kim H, Li H, Seo JM |
1516 - 1519 |
Selective growth of iron oxide thin films using the combined method of metal-organic chemical vapor deposition and microcontact printing Lee JY, Kang BC, Jung DY, Boo JH |
1520 - 1523 |
Epitaxial Fe3O4 on SrTiO3 characterized by transmission electron microscopy Zheng JG, Sterbinsky GE, Cheng J, Wessels BW |
1524 - 1528 |
Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1-xN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Onuma T, Koyama T, Chakraborty A, McLaurin M, Haskell BA, Fini PT, Keller S, Denaars SP, Speck JS, Nakamura S, Mishra UK |
1529 - 1532 |
Fabrication of GaN-based metal-oxide-semiconductor light-emitting diodes operating in ultraviolet spectral region Honda T, Kobayashi T, Komiyama S, Mashiyama Y |
1533 - 1535 |
Interface and optical properties of InGaAsNSb/GaAs quantum wells on GaAs (411) substrates by molecular beam epitaxy Li W, Pei C, Torfi A, Moscicka D, Wang WI |
1536 - 1541 |
Formation of (Zn,Co)O by annealing of Co overlayers on ZnO Dumont J, Mugumaoderha C, Seldrum T, Frising F, Moisson C, Turover D, Sporken R |