L11 - L13 |
Characterization of 5 MeV proton-irradiated gallium nitride nanowires Kim HY, Ahn J, Mastro MA, Eddy CR, Han J, Yang T, Kim J |
L14 - L17 |
Energetic deposition of B-10 on high aspect ratio trenches for neutron detectors Klepper CC, Monteiro OR, Carlson EP, Keitz MD |
L18 - L20 |
Sub-10-nm nanolithography with a scanning helium beam Sidorkin V, van Veldhoven E, van der Drift E, Alkemade P, Salemink H, Maas D |
1801 - 1804 |
Fabrication of high quality factor photonic crystal microcavities in InAsP/InP membranes combining reactive ion beam etching and reactive ion etching Martinez LJ, Prieto I, Alen B, Postigo PA |
1805 - 1808 |
Nondestructive nanoscale profile measurement on two-dimensional photonic crystal structure using differential confocal microscopy Kuo WC, Juang FJ, Su HR, Hsieh ML |
1809 - 1812 |
Dry etch selectivity of a-C:H hardmasks for sub-65 nm patterning applications Padhi D, Kim BH, Witty D |
1813 - 1820 |
Fabrication of all-metal field emitter arrays with controlled apex sizes by molding Kirk E, Tsujino S, Vogel T, Jefimovs K, Gobrecht J, Wrulich A |
1821 - 1824 |
Design and fabrication of surface acoustic wave delay line for surface acoustic wave chemical-agent sensors Zhao YG, Liu M, Li JJ, Niu JB, Li DM |
1825 - 1828 |
Method for measuring solvent permeation through polymer film on porous dielectric films Geil RD, Senkevich JJ, Rogers BR |
1829 - 1833 |
Well-aligned TiO2 nanofibers grown by near-field-electrospinning Rinaldi M, Ruggieri F, Lozzi L, Santucci S |
1834 - 1837 |
X-ray photoelectron spectroscopy characterization of aminosilane anchored to ZnO nanorod arrays grown by an aqueous solution method with microwave-assisted heating Ogata K, Koike K, Sasa S, Inoue M, Yano M |
1838 - 1843 |
Proximity effect in ion-beam-induced deposition of nanopillars Chen P, Salemink HWM, Alkemade PFA |
1844 - 1850 |
Deconvolution analyses of secondary ion mass spectrometry shallow depth profiles with depth resolution functions from silicon substrate-based delta-doped samples Tomita M, Tanaka H, Koike M, Takeno S, Hori Y, Takahashi M |
1851 - 1855 |
Investigation of etching two-dimensional microhole lattice array on lithium niobate with focused ion beam for fabricating photonic crystals Xu XF, Yan S, Xue JM, Wang YG, Wang KM, Wang XL |
1856 - 1860 |
Fabrication of ZnO nanorods by pulsed Nd:YAG laser ablation deposition Shen YQ, Xu N, Lai JS, Sun J, Wu JD, Ying ZF, Okada T |
1861 - 1864 |
Lift-off process using bilayer ultraviolet nanoimprint lithography and methacryloxypropyl-terminated-polydimethylsiloxane-based imprint resin Jung HY, Hwang SY, Bae BJ, Lee H |
1865 - 1869 |
Ideal SiC Schottky barrier diodes fabricated using refractory metal borides Oder TN, Sutphin E, Kummari R |
1870 - 1873 |
Electrical properties of nanoscale Au contacts on 4H-SiC Han SY, Lee JL, Pearton SJ |
1874 - 1880 |
Scanning tunneling microscope-cathodoluminescence measurement of the GaAs/AlGaAs heterostructure Watanabe K, Nakamura Y, Ichikawa M, Kuboya S, Katayama R, Onabe K |
1881 - 1885 |
Violet light-emitting diodes grown on crack-free AlGaN templates Wang TW, Chen NC, Lien WC, Wu MC, Shih CF |
1886 - 1889 |
Fabrication of Si-based two-dimensional photonic quasicrystals by using multiple-exposure holographic lithography Yeo JB, Yun SD, Kim NH, Lee HY |
1890 - 1896 |
Online detection system of microtarget assembly Qiu ZR, Wang T, Wang JJ, Li XH, Zhong Y |
1897 - 1900 |
p-type behavior of nitrogen doped, lithium doped, and nitrogen-lithium codoped Zn0.11Mg0.89O thin films Qiu MX, Gu XQ, Ye ZZ, Lu JG, He HP, Zhang YZ, Zhao BH |
1901 - 1903 |
Light enhancement of Al nanoclusters embedded in Al-doped ZnO films of GaN-based light-emitting diodes Lee CT, Chou YH, Yan JT, Lee HY |
1904 - 1908 |
n-type, p-type and semi-insulating ZnO:N thin film growth by metal organic chemical vapor deposition with NH3 doping Zaidi T, Melton A, Fenwick WE, Ferguson I |
1909 - 1914 |
Inductively coupled plasma etching of GaAs suspended photonic crystal cavities Braive R, Le Gratiet L, Guilet S, Patriarche G, Lemaitre A, Beveratos A, Robert-Philip I, Sagnes I |
1915 - 1918 |
Enhanced resolution of poly(methyl methacrylate) electron resist by thermal processing Arjmandi N, Lagae L, Borghs G |
1919 - 1925 |
Chemical effect of dry and wet cleaning of the Ru protective layer of the extreme ultraviolet lithography reflector Belau L, Park JY, Liang T, Seo H, Somorjai GA |
1926 - 1932 |
Feature filling modeling for step and flash imprint lithography Chauhan S, Palmieri F, Bonnecaze RT, Willson CG |
1933 - 1937 |
Dependence of local structural and electrical properties of nitride doped zinc oxide films on growth temperature Chen SH, Yu CF, Liu YJ, Lin TJ, Li YC |
1938 - 1942 |
Evaluation of extreme-ultraviolet lithography mask absorber pattern on multilayer phase defect using extreme-ultraviolet microscope Hamamoto K, Sakaya N, Hosoya M, Kureishi M, Ohkubo R, Shoki T, Nagarekawa O, Kishimoto J, Watanabe T, Kinoshita H |
1943 - 1948 |
Effects of nitrogen doping of ZnO during or after deposition Yen TF, DiNezza M, Haungs A, Kim SJ, Anderson WA, Cartwright AN |
1949 - 1957 |
Patterning of alkanethiolate self-assembled monolayers by downstream microwave nitrogen plasma: Negative and positive resist behavior Weng CC, Liao JD, Wu YT, Tsai SC, Chen CH, Zharnikov M |
1958 - 1962 |
Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold Wang Z, Yu XH, Xing RB, Han YC, Takahara A |
1963 - 1968 |
Resistivity reduction by external oxidation of Cu-Mn alloy films for semiconductor interconnect application Iijima J, Fujii Y, Neishi K, Koike J |
1969 - 1975 |
Accumulated sidewall damage in dry etched photonic crystals Berrier A, Shi Y, Siegert J, Marcinkevicius S, He S, Anand S |
1976 - 1983 |
Analytical model for ArF photoresist shrinkage under scanning electron microscopy inspection Ayal G, Andelman D, Cohen Y |
1984 - 1988 |
Synthesis of silicon-containing materials for UV-curable imprint etch barrier solutions Song SS, Kim SM, Choi BY, Jung GY, Lee H |
1989 - 1992 |
The influence of external load and air pressure on air slide table performance of ultraprecision machines in nanomachining Vahdati M, Vahdati N |
1995 - 1995 |
PAPERS FROM THE 36th ANNUAL CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES (PCSI) Preface Shanabrook B, Ludeke R |
1996 - 2002 |
Loop formation in graphitic nanoribbon edges using furnace heating or Joule heating Jia XT, Campos-Delgado J, Gracia-Espino EE, Hofmann M, Muramatsu H, Kim YA, Hayashi T, Endo M, Kong J, Terrones M, Dresselhaus MS |
2003 - 2007 |
Theory and measurements of room temperature transport in graphene using SiO2 backgate and electrochemical gate Shishir RS, Chen F, Xia J, Tao NJ, Ferry DK |
2008 - 2011 |
Density functional theory calculations and the induced density of interface states model for noble metals/C-60 interfaces Abad E, Ortega J, Flores F |
2012 - 2014 |
Surface, bulk, and interface electronic states of epitaxial BiFeO3 films Zhang J, Rutkowski M, Martin LW, Conry T, Ramesh R, Ihlefeld JF, Melville A, Schlom DG, Brillson LJ |
2015 - 2019 |
Diffraction studies of submonolayer Sr structures on the Si (001) surface Reiner JW, Segal Y, Garrity KF, Hong H, Ismail-Beigi S, Ahn CH, Walker FJ |
2020 - 2023 |
In-plane strain effects on dielectric properties of the HfO2 thin film Wakui S, Nakamura J, Natori A |
2024 - 2027 |
In0.53Ga0.47As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al2O3, HfO2, and LaAlO3 gate dielectrics Zhao H, Yum JH, Chen YT, Lee JC |
2028 - 2035 |
Capacitance-voltage and photoluminescence study of high-k/GaAs interfaces controlled by Si interface control layer Akazawa M, Domanowska A, Adamowicz B, Hasegawa H |
2036 - 2039 |
Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs Baraskar AK, Wistey MA, Jain V, Singisetti U, Burek G, Thibeault BJ, Lee YJ, Gossard AC, Rodwell MJW |
2040 - 2043 |
Electrical transport in GaN nanowires grown by selective epitaxy Talin AA, Swartzentruber BS, Leonard F, Wang X, Hersee SD |
2044 - 2047 |
Hot electron transport studies of the Cu/Si(001) interface using ballistic electron emission microscopy Garramone JJ, Abel JR, Sitnitsky IL, Moore RL, LaBella VP |
2048 - 2054 |
Current collapse transient behavior and its mechanism in submicron-gate AlGaN/GaN heterostructure transistors Hasegawa H, Akazawa M |
2055 - 2061 |
Plasmonic behavior of Ag/dielectric nanowires and the effect of geometry Prokes SM, Alexson D, Glembocki OJ, Park HD, Rendell RW |
2062 - 2065 |
Anisotropic half-metallic ground state of Mn atomic wire on GaAs(110) Hirayama M, Natori A, Nakamura J |
2066 - 2070 |
Molecular beam epitaxy of high mobility In0.75Ga0.25As for electron spin transport applications Simmonds PJ, Holmes SN, Beere HE, Farrer I, Sfigakis F, Ritchie DA, Pepper M |