| 1933 - 1937 |
Scanning Probe Anodization - Patterning of Hydrogen-Terminated Silicon Surfaces for the Nanofabrication of Gold Structures by Electroless Plating
Sugimura H, Nakagiri N |
| 1938 - 1944 |
Volume Increase Phenomena in Reciprocal Scratching of Polycarbonate Studied by Atomic-Force Microscopy
Khurshudov A, Kato K |
| 1945 - 1952 |
Conducting Atomic-Force Microscopy Study of Silicon Dioxide Breakdown
Oshea SJ, Atta RM, Murrell MP, Welland ME |
| 1953 - 1959 |
Real-Time Extraction of Growth-Rates from Rotating Substrates During Molecular-Beam Epitaxy
Collins DA, Papa GO, Mcgill TC |
| 1960 - 1967 |
Heating and Failure of Niobium Tip Cathodes Due to a High-Density Pulsed-Field Electron-Emission Current
Shkuratov SI, Barengolts SA, Litvinov EA |
| 1968 - 1972 |
Fabrication of Double-Gated Si Field Emitter Arrays for Focused Electron-Beam Generation
Itoh J, Tohma Y, Morikawa K, Kanemaru S, Shimizu K |
| 1973 - 1978 |
Field Emitter Array Mask Patterning Using Laser Interference Lithography
Spallas JP, Hawryluk AM, Kania DR |
| 1979 - 1983 |
Resist Charging in Electron-Beam Lithography
Liu W, Ingino J, Pease RF |
| 1984 - 1987 |
Lithography Using Electron-Beam-Induced Etching of a Carbon-Film
Wang D, Hoyle PC, Cleaver JR, Porkolab GA, Macdonald NC |
| 1988 - 1993 |
Synthesis of Electrostatic Multielectrode Deflectors
Cho H, Szilagyi M |
| 1994 - 1998 |
Charging Effects in Plasma Immersion Ion-Implantation for Microelectronics
Qin S, Bernstein JD, Zhao ZF, Liu W, Chan C, Shao JQ, Denholm S |
| 1999 - 2003 |
Cathodic Arc Ion-Implantation for Semiconductor-Devices
Xia Z, Chan C, Meassick S, Purser R |
| 2004 - 2007 |
Charge Buildup Reduction During Biased Electron-Cyclotron-Resonance Plasma Deposition
Machida K, Itsumi M, Minegishi K, Arai E |
| 2008 - 2012 |
Selective Reactive Ion Etching of Silicon-Nitride over Silicon Using Chf3 with N-2 Addition
Li YX, French PJ, Wolffenbuttel RF |
| 2013 - 2015 |
Metal-Insulator-Metal Capacitors by Using Electron-Cyclotron-Resonance Plasma-SiO2
Machida K, Imai K, Miura K, Ozaki Y, Arai E |
| 2016 - 2021 |
High-Rate Electron-Cyclotron-Resonance Etching of GaN, Inn, and AIN
Shul RJ, Howard AJ, Pearton SJ, Abemathy CR, Vartuli CB, Barnes PA, Bozack MJ |
| 2022 - 2024 |
Chemical-Analysis of a Cl-2/BCl3/Ibr3 Chemically Assisted Ion-Beam Etching Process for GaAs and InP Laser-Mirror Fabrication Under Cryo-Pumped Ultrahigh-Vacuum Conditions
Daleiden J, Eisele K, Sah RE, Schmidt KH, Ralston JD |
| 2025 - 2030 |
Etching of GaAs/AlGaAs Rib Wave-Guide Structures Using BCl3/Cl-2/N-2/Ar Electron-Cyclotron-Resonance
Constantine C, Shul RJ, Sullivan CT, Snipes MB, Mcclellan GB, Hafich M, Fuller CT, Mileham JR, Pearton SJ |
| 2031 - 2040 |
Ion Sputtering of GaAs(110) - From Individual Bombardment Events to Multilayer Removal
Wang XS, Pechman RJ, Weaver JH |
| 2041 - 2048 |
Arsenic Cap Layer Desorption and the Formation of GaAs(001)C(4X4) Surfaces
Karpov I, Venkateswaran N, Bratina G, Gladfelter W, Franciosi A, Sorba L |
| 2049 - 2052 |
Growth of Very-Low Deep Impurity Density (N-T-Less-Than-5X10(11) cm(-3))InxGa1-Xp on GaAs by Metalorganic Chemical-Vapor-Deposition
Huang ZC, Yang B, Chen HK, Chen JC |
| 2053 - 2056 |
Surface-Topography and Composition of InP(100) After Various Sulfur Passivation Treatments
Gao LJ, Anderson GW, Esposto F, Norton PR, Mason BF, Lu ZH, Graham MJ |
| 2057 - 2063 |
Intrinsic Asymmetry Between the (011) and (01(1)over-Bar) Crystallographic Directions in the In0.52Al0.48As/InP Matched System
Peiro F, Cornet A, Morante JR |
| 2064 - 2068 |
Higher Mobility of Charge-Carriers in InAs/GaAs Superlattices Through the Elimination of InGaAs Alloy Disorders on GaAs
Moreira MV, Deoliveira AG, Py MA |
| 2069 - 2074 |
Restricted Motion of a GaAs Surface Fermi-Level Caused by Excess as
Wada Y, Wada K |
| 2075 - 2080 |
Investigation of N-Type and P-Type Doping of GaN During Epitaxial-Growth in a Mass-Production Scale Multiwafer-Rotating-Disk Reactor
Yuan C, Salagaj T, Gurary A, Thompson AG, Kroll W, Stall RA, Hwang CY, Schurman M, Li Y, Mayo WE, Lu Y, Krishnankutty S, Shmagin IK, Kolbas RM, Pearton SJ |
| 2081 - 2091 |
Metallurgy of Al-Ni-Ge Ohmic Contact Formation on N-GaAs
Lin XW, Lampert WV, Haas TW, Holloway PH, Lilientalweber Z, Swider W, Washburn J |
| 2092 - 2099 |
Thermal-Stability of Moau and Tiptau Nonalloyed InGaAs Contacts
Wakita AS, Moll N, Rosner SJ, Fischercolbrie A |
| 2100 - 2104 |
Simulation of Electromigration in Thin-Film Diffusion-Barriers by the Transmission-Line Matrix-Method
Gui X, Dew SK, Brett MJ |
| 2105 - 2114 |
Chemical-Vapor-Deposition Tin Process for Contact via Barrier Applications
Paranjpe A, Islamraja M |
| 2115 - 2118 |
Aluminum Chemical-Vapor-Deposition with New Gas-Phase Pretreatment Using Tetrakisdimethylamino-Titanium for Ultralarge-Scale Integrated-Circuit Metallization
Sugai K, Okabayashi H, Shinzawa T, Kishida S, Kobayashi A, Yako T, Kadokura H |
| 2119 - 2123 |
Preparation and Characterization of Epitaxial Gold-Films Deposited on Mica by Direct-Current Magnetron Sputtering
Elbel N, Behner H, Vonseggern H |
| 2124 - 2129 |
Ultrasound Effects on the Tribological Properties of Synthesized Diamond Films
Snitka V, Travaairoldi VJ, Baranauskas V |
| 2130 - 2133 |
Extremely Low-Resistance Au/Mn/Ni/Au Ohmic Contact to P-GaAs
Thiery JF, Fawaz H, Leroy A, Salmer G |
| 2134 - 2136 |
Electrical Characteristics of Metal/N-InSb Contacts with InSb Annealed Rapidly Prior to Metal Evaporation
Eftekhari G |
| 2137 - 2138 |
Fabrication of Silicon Quantum Wires by Anisotropic Wet Chemical Etching and Thermal-Oxidation
Liu JL, Shi Y, Wang F, Zhang R, Han P, Mao BH, Zheng YD |
| 2139 - 2141 |
Study of the Electrical Active Defects Induced by Reactive Ion Etching in N-Type Silicon
Biavati M, Perezquintana I, Poggi A, Susi E |
| 2142 - 2144 |
A Novel Design for a Small Retractable Cylindrical Mirror Analyzer
Mcllroy DN, Dowben PA, Knop A, Ruhl E |
| 2145 - 2147 |
Deep Trench Fabrication by Si(110) Orientation-Dependent Etching
Theil JA |
