| 1595 - 1598 |
Nanoscale Etching of GaAs-Surfaces in Electrolytic Solutions by Hole Injection from a Scanning Tunneling Microscope Tip
Kaneshiro C, Okumura T |
| 1599 - 1603 |
Effect of Etch Holes on the Mechanical-Properties of Polysilicon
Sharpe WN, Vaidyanathan R, Yuan B, Bao G, Edwards RL |
| 1604 - 1606 |
Modification of Surface-Morphology and Optoelectronic Response in Porous Si Films by Electrochemical Methods
Yang ZH, Zhang P, Wang DJ, Li TJ |
| 1607 - 1609 |
Visible Photoluminescence of Ge Nanocrystallites Embedded in SiO2 Thin-Films
Yue LP, He YH |
| 1610 - 1612 |
Structure and Phonon Density-of-States in Nanoclusters - Molecular-Dynamics Study for Al
Schommers W, Rieth M |
| 1613 - 1617 |
Thermal-Desorption of Si Clusters from Si and Si-Deposited Ta Surfaces
Tanaka H, Kanayama T |
| 1618 - 1622 |
Nanoscale Organized Assembly of Nanoparticulate TiO2-Stearate Monolayers Through the Langmuir-Blodgett Method
Li LS, Zhang J, Wang LJ, Chen YM, Hui Z, Li TJ, Chi LF, Fuchs H |
| 1623 - 1627 |
Tensor Low-Energy-Electron Diffraction Study for the Structure of a Cr(001)-P-(1X1)-N Surface
Ri CS, Cho YP, Park JB, Kang JS, Kim SH, Lee KH |
| 1628 - 1632 |
Extraordinary Growth of C-60 on a GaAs(001) as-Rich 2X4 Surface
Sakurai T, Xue QK, Hashizume T, Hasegawa Y |
| 1633 - 1636 |
Precise Force Curves in Air and Liquid by Magnetic Force Feedback
Yamamoto S, Yamada H, Tokumoto H |
| 1637 - 1640 |
Possible Multistranded DNA Induced by Acid Denaturation-Renaturation
Li JW, Tian F, Wang C, Bai CL, Cao EH |
| 1641 - 1646 |
Scanning-Tunneling-Microscopy and Low-Energy-Electron Diffraction Study of the Formation of a Root-3X-Root-3R30-Degrees Reconstruction on the Hydrogen Etched Si(111) 1X1 Surface
Rogers D, Tiedje T |
| 1647 - 1651 |
Frequency-Modulation Detection High-Vacuum Scanning Force Microscope with a Self-Oscillating Piezoelectric Cantilever
Chu JR, Itoh T, Lee CK, Suga T, Watanabe K |
| 1652 - 1656 |
Atomic-Force Microscopy Studies of Hg1-xCdxTe Thin-Films Grown by Isothermal Vapor-Phase Epitaxy
Dinardo S, Lozzi L, Santucci S, Bernardi S |
| 1657 - 1660 |
Ga Focused-Ion-Beam Shallow-Implanted Quantum Wires
Itoh M, Saku T, Hirayama Y, Tarucha S |
| 1661 - 1665 |
Improved Cold Electron-Emission Characteristics of Electroluminescent Porous Silicon Diodes
Sheng X, Koyama H, Koshida N, Iwasaki S, Negishi N, Chuman T, Yoshikawa T, Ogasawara K |
| 1666 - 1677 |
Nanoprotrusion Model for Field-Emission from Integrated Microtips
Purcell ST, Binh VT, Baptist R |
| 1678 - 1681 |
Electron-Emission from the Pyramidal-Shaped Diamond After Hydrogen and Oxygen-Surface Treatments
Yamada T, Ishihara H, Okano K, Koizumi S, Itoh J |
| 1682 - 1684 |
Technique for Fabricating Self-Aligned Gates Onto Silicon Field Emitter Arrays
Zhu CC, Guan H, Liu WD, Li TY, Sin JK |
| 1685 - 1687 |
Growth-Mechanism of Planar-Type GaAs Nanowhiskers
Haraguchi K, Hiruma K, Hosomi K, Shirai M, Katsuyama T |
| 1688 - 1696 |
Fabrication of One-Dimensional Nanowire Structures Utilizing Crystallographic Orientation in Silicon and Their Conductance Characteristics
Namatsu H, Horiguchi S, Nagase M, Kurihara K |
| 1697 - 1702 |
Cyclotron-Resonance in Asymmetric Modulation-Doped Field-Effect Transistor Heterostructures Using InxGa1-xAs Quantum-Well and InAs-GaAs Superlattice Channels
Cury LA, Matinaga FM, Freire SL, Moreira MV, Beerens J, Py MA |
| 1703 - 1706 |
High-Quality Interfaces in GaAs-AlAs Quantum-Wells Determined from High-Resolution Photoluminescence
Reynolds DC, Look DC, Jogai B, Kaspi R, Evans KR, Estes M |
| 1707 - 1714 |
Role of Atomic-Hydrogen in Argon Plasma-Assisted Epitaxy of InGaAsP/InP
Lapierre RR, Robinson BJ, Thompson DA |
| 1715 - 1723 |
Well Surface-Roughness and Fault Density Effects on the Hall-Mobility of InxGa1-xAs/Inyal1-Yas/InP High-Electron-Mobility Transistors
Peiro F, Ferrer JC, Cornet A, Morante JR, Beck M, Py MA |
| 1724 - 1727 |
Submicron Air-Bridge Interconnection Process for Complex Gate Geometries
Persson M, Pettersson J |
| 1728 - 1732 |
High-Rate CH4-H-2 Plasma Etch Processes for InP
Whelan CS, Kazior TE, Hur KY |
| 1733 - 1740 |
Influence of the Gas-Mixture on the Reactive Ion Etching of InP in CH4-H-2 Plasmas
Feurprier Y, Cardinaud C, Turban G |
| 1741 - 1746 |
Electron Irradiance of Conductive Sidewalls - A Determining Factor for Pattern-Dependent Charging
Hwang GS, Giapis KP |
| 1747 - 1751 |
Sidewall Deposition Film in Platinum Etching with Ar/Halogen Mixed-Gas Plasmas
Shibano T, Oomori T |
| 1752 - 1757 |
Formation and Mechanism of Dimple/Pit on Si Substrate During WSix/Poly-Si Gate Stack Etch
Pan PH, Liu L |
| 1758 - 1766 |
Integrated Plasma-Promoted Chemical-Vapor-Deposition Route to Aluminum Interconnect and Plug Technologies for Emerging Computer Chip Metallization
Faltermeier J, Knorr A, Talevi R, Gundlach H, Kumar KA, Peterson GG, Kaloyeros AE, Sullivan JJ, Loan J |
| 1767 - 1772 |
Accuracy of Thin-Film Stress Measurements with C-Si Microbeams Fabricated by Dry-Etching
Boutry M, Bosseboeuf A, Bourouina T, Grandchamp JP, Dufourgergam E, Gilles JP |
| 1773 - 1774 |
Study of Ohmic Contact Resistance to Ga(1-X)in(X)as/InP Composite Channel InP High-Electron-Mobility Transistors for X=35-Percent to X=81-Percent
Shealy JB, Matloubian M, Liu T, Ngo C |
| 1775 - 1779 |
Reliable 0.28 Mu-M Metal Contact Technology
Kim JS, Kang CJ, Park JW, Chung SH, Kim BC, Lee JY, Park JW |
| 1780 - 1787 |
Study of the Copper Reflow Process Using the Grofilms Simulator
Friedrich LJ, Gardner DS, Dew SK, Brett MJ, Smy T |
| 1788 - 1793 |
Across-Wafer Nonuniformity of Long Throw Sputter-Deposition
Mayo AA, Hamaguchi S, Joo JH, Rossnagel SM |
| 1794 - 1799 |
Experimental-Evidence of 2-Dimensional-3-Dimensional Transition in the Stranski-Krastanow Coherent Growth
Berti M, Drigo AV, Rossetto G, Torzo G |
| 1800 - 1804 |
Anomalous, Behavior of Resistance in Al-Alloy Interconnections Stacked with Ti Layers During Electromigration Tests
Kouno T, Hosaka M, Niwa H, Yamada M |
| 1805 - 1810 |
Self-Assembled Monolayers Exposed by Metastable Argon and Metastable Helium for Neutral Atom Lithography and Atomic-Beam Imaging
Bard A, Berggren KK, Wilbur JL, Gillaspy JD, Rolston SL, Mcclelland JJ, Phillips WD, Prentiss M, Whitesides GM |
| 1811 - 1817 |
Hybrid Atomic-Force Scanning Tunneling Lithography
Wilder K, Soh HT, Atalar A, Quate CF |
| 1818 - 1824 |
Nanolithography by Displacement of Catalytic Metal-Clusters Using an Atomic-Force Microscope Tip
Brandow SL, Dressick WJ, Dulcey CS, Koloski TS, Shirey LM, Schmidt J, Calvert JM |
| 1825 - 1832 |
Extension of Krypton Fluoride Excimer-Laser Lithography to the Fabrication of 0.18 Mu-M Devices
Ogawa T, Uematsu M, Takeuchi K, Oda T |
| 1833 - 1838 |
Distortion Aberration in a Symmetrical Magnetic Doublet for an Electron-Beam Projection System
Nakasuji M |
| 1839 - 1842 |
On the Link Between Electron Shadowing and Charging Damage
Hwang GS, Giapis KP |
| 1843 - 1846 |
Low-Temperature Plasma-Enhanced Chemical-Vapor-Deposition of Fluorinated Silicon-Oxide Films as an Interlayer Dielectric
Song JH, Ajmera PK, Lee GS |
| 1847 - 1847 |
Neutral Shadowing in Circular Cylindrical Trench Holes (Vol 14, 3492, 1996)
Abrahamshrauner B, Chen WJ |
