Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.16, No.5 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (60 articles)

2585 - 2608	Directional and ionized physical vapor deposition for microelectronics applications Rossnagel SM
2609 - 2614	Si/SiGe field-effect transistors Konig U, Gluck M, Hock G
2615 - 2618	Photo- and electroluminescence characterization of erbium doped SiGe Neufeld E, Sticht A, Brunner K, Riedl H, Abstreiter G, Holzbrecher H, Bay H
2619 - 2622	Voltage-tunable near-infrared photodetector : Versatile component for optical communication systems Masini G, Colace L, Assanto G, Pearsall TP, Presting H
2623 - 2628	Study of reaction and electrical properties at Ti/SiGe/Si(100) contacts for ultralarge scale integrated applications Zaima S, Yasuda Y
2629 - 2632	SiGe/Si heterostructures produced by double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations Xia Z, Ristolainen EO, Holloway PH
2633 - 2638	Role of Te on the morphology of InAs self-assembled islands Safar GAM, Rodrigues WN, Moreira MVB, de Oliveira AG, Neves BRA, Vilela JM, Andrade MS, Rochet F
2639 - 2643	Growth of strained GaInP on InP by metalorganic molecular beam epitaxy for heterostructure field effect transistor application Cohen GM, Zisman P, Bahir G, Ritter D
2644 - 2649	Molecular beam epitaxial growth of InAs/AlGaAsSb deep quantum well structures on GaAs substrates Kuze N, Goto H, Matsui M, Shibasaki I
2650 - 2655	Investigation of growth mode behavior and surface morphology evolution of metalorganic vapor phase epitaxy grown ZnTe layers on (001) GaAs Longo M, Lovergine N, Mancini AM, Leo G, Berti M
2656 - 2659	Passivation of the GaAs(100) surface with a vapor-deposited GaS film Cao XA, Hu HT, Ding XM, Yuan ZL, Dong Y, Chen XY, Lai B, Hou XY
2660 - 2664	Operational experience with a valved antimony cracker source for use in molecular beam epitaxy Hall E, Naone R, English JE, Blank HR, Champlain J, Kroemer H
2665 - 2671	Study of the mechanisms of GaN film growth on GaAs surfaces by thermal and plasma nitridation Losurdo M, Capezzuto P, Bruno G, Lefebvre PR, Irene EA
2672 - 2674	Thermal decomposition of bulk and heteroepitaxial (100) InP surfaces : A combined in situ scanning electron microscopy and mass spectrometric study Riesz F, Dobos L, Karanyi J
2675 - 2679	Gate recessing optimization of GaAs/Al0.22Ga0.78As heterojunction field effect transistor using citric acid hydrogen peroxide ammonium hydroxide for power applications Hue X, Boudart B, Crosnier Y
2680 - 2685	Investigation of citric acid hydrogen peroxide etched GaAs and Al0.3Ga0.7As surfaces by spectroscopic ellipsometry Snyder PG, Cho SJ
2686 - 2689	Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy Jones JT, Croke ET, Garland CM, Marsh OJ, McGill TC
2690 - 2694	New plasma chemistries for dry etching of InGaAIP alloys : Bl(3) and BBr3 Hong J, Cho H, Maeda T, Abernathy CR, Pearton SJ, Shul RJ, Hobson WS
2695 - 2698	Magnetron ion etching of through-wafer via holes for GaAs monolithic microwave integrated circuits using SiCl4 Mitra A, Nordquist CD, Jackson TN, Mayer TS
2699 - 2706	High-density, inductively coupled plasma etch of sub half-micron critical layers : Transistor polysilicon gate definition and contact formation Westerheim AC, Jones RD, Mager PJ, Dubash JH, Dalton TJ, Goss MW, Baum SK, Dass SK
2707 - 2711	Neural optimal etch time controller for reactive ion etching Limanond S, Si J, Tseng YL
2712 - 2719	Properties and reliability of ultrathin oxides grown on four inch diameter silicon wafers by microwave plasma afterglow oxidation Chen CR, Hu SF, Chen PC, Hwang HL, Hsia LC
2720 - 2724	Elimination of gate oxide damage during electron cyclotron resonance plasma etching of the tungsten polycide gate structure (WSi/poly-Si) Chen R, Koretsky MD
2725 - 2728	Contact resistance degradation of Pd/Ge ohmic contact on pseudomorphic high electron mobility transistor Lee JL, Kim YT
2729 - 2733	Integration of chemical vapor deposition titanium nitride for 0.25 mu m contacts and vias Westerheim AC, Bulger JM, Whelan CS, Sriram TS, Elliott LJ, Maziarz JJ
2734 - 2744	Development of texture in interconnect thin film stacks Knorr DB, Merchant SM, Biberger MA
2745 - 2750	Electromigration properties of copper-zirconium alloy interconnects Igarashi Y, Ito T
2751 - 2758	Effect of H2O partial pressure and temperature during Ti sputtering on texture and electromigration in AlSiCu/Ti/TiN/Ti metallization Yoshida T, Hashimoto S, Mitsushima Y, Ohwaki T, Taga Y
2759 - 2762	Dielectric-assisted trilayer lift-off process for improved metal definition Ryan RW, Kopf RF, Hamm RA, Malik RJ, Masaitis R, Opila R
2763 - 2766	Feasibility of gate patterning by using a hard mask on 0.25 mu m technology and below Lee HC, Creusen M, Vanhaelemeersch S
2767 - 2771	Application of dual-functional MoO3/WO3 bilayer resists to focused ion beam nanolithography Hashimoto M, Koreeda T, Koshida N, Komuro M, Atoda N
2772 - 2775	Fabrication of x-ray mask from a diamond membrane and its evaluation Noguchi H, Kubota Y, Okada I, Oda M, Matsuda T, Motoyoshi A, Ohki S, Yoshihara H
2776 - 2785	Artifacts in low-energy depth profiling using oxygen primary ion beams : Dependence on impact angle and oxygen flooding conditions Wittmaack K
2786 - 2788	Optimum annealing conditions for boron implanted SiGe epilayers Jiang RL, Liu WP, Jiang N, Zhu SM, Shen B, Chen ZZ, Zheng YD
2789 - 2795	Development of a stainless steel tube resistant to corrosive Cl-2 gas for use in semiconductor manufacturing Ohmi T, Yoshida M, Matudaira Y, Shirai Y, Nakamura O, Gozyuki M, Hashimoto Y
2796 - 2801	Scanning force microscopy characterization of individual carbon nanotubes on electrode arrays Muster J, Burghard M, Roth S, Duesberg GS, Hernandez E, Rubio A
2802 - 2805	Structural characterization of ultrathin nanocrystalline silicon films formed by annealing amorphous silicon Lutzen J, Kamal AHM, Kozicki MN, Ferry DK, Sidorov MV, Smith DJ
2806 - 2810	Nanometer scale selective etching of Si(111) surface using silicon nitride islands Ha JS, Park KH, Yun WS, Lee EH
2811 - 2816	Incremental-growth model for the deposition of spatially modulated thin film nanostructures Hodgkinson I, Wu QH, McPhun A
2817 - 2821	Nanometer fabrication using selective thermal desorption of SiO2 induced by focused electron beams and electron beam interference fringes Fujita S, Maruno S, Watanabe H, Ichikawa M
2822 - 2824	Fabrication of silicon and metal nanowires and dots using mechanical atomic force lithography Hu S, Hamidi A, Altmeyer S, Koster T, Spangenberg B, Kurz H
2825 - 2832	Oscillating contrast in room-temperature scanning tunneling microscope images of localized charges in III-V semiconductor cleavage surfaces Domke C, Heinrich M, Ebert P, Urban K
2833 - 2836	Investigation of the modification mechanism induced by a scanning tunneling microscope on YBa2Cu3O7-delta Bertsche G, Clauss W, Prins FE, Kern DP
2837 - 2840	Scanning tunneling microscope tip as a positionable contact : Probing a Josephson-junction array at subkelvin temperatures Wildoer JWG, van Oudenaarden A, Harmans CJPM, van Kempen H
2841 - 2843	Stretch and align virus in nanometer scale on an atomically flat surface Hu J, Zhang ZH, Ouyang ZQ, Chen SF, Li MQ, Yang FJ
2844 - 2848	Analysis of KOH etching of (100) silicon on insulator for the fabrication of nanoscale tips Yun MH, Burrows VA, Kozicki MN
2849 - 2854	Dry etching of Si field emitters and high aspect ratio resonators using an inductively coupled plasma source Rakhshandehroo MR, Weigold JW, Tian WC, Pang SW
2855 - 2858	Surface conditioning of active molybdenum field emission cathode arrays with H-2 and helium Chalamala BR, Wallace RM, Gnade BE
2859 - 2865	Effect of O-2 on the electron emission characteristics of active molybdenum field emission cathode arrays Chalamala BR, Wallace RM, Gnade BE
2866 - 2870	Poisoning of Spindt-type molybdenum field emitter arrays by CO2 Chalamala BR, Wallace RM, Gnade BE
2871 - 2875	Emission characteristics of a conical field emission gun Yamamoto Y, Miyokawa T
2876 - 2880	Direct current circuit simulation model for a field emission triode Lu CW, Lee CL
2881 - 2886	Simulation study on performance of field emitter array Lei W, Wang BP, Yin HC
2887 - 2890	Low temperature plasma-promoted chemical vapor deposition of tantalum from tantalum pentabromide for copper metallization Chen XM, Frisch HL, Kaloyeros AE, Arkles B
2891 - 2893	Photolithographic patterning of phosphor screens by electrophoretic deposition for field emission display application Kang SW, Yoo JS, Lee JD
2894 - 2897	Positive sample bias effect in scanning tunneling microscope imaging of low coverage alkali metal atoms on Si(111)7x7 surface Eitle J, Gorelik D, Aloni S, Margalit T, Meyler D, Haase G
2898 - 2901	Combined method of focused ion beam milling and ion implantation techniques for the fabrication of high temperature superconductor Josephson junctions Chen CH, Jin I, Pai SP, Dong ZW, Sharma RP, Lobb CJ, Venkatesan T, Edinger K, Orloff J, Melngailis J, Zhang Z, Chu WK
2902 - 2905	Reflow of copper in an oxygen ambient Lee SY, Kim DW, Rha SK, Park CO, Park HH
2906 - 2906	Hole transport investigation in unstrained and strained SiGe (vol 16, pg 1667, 1998) Bufler FM, Graf P, Meinerzhagen B, Fischer G, Kibbel H
2907 - 2907	Papers from the tenth international vacuum microelectronics conference (vol 16, pg 676, 1998) [Anonymous]