Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.20, No.5 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (62 articles)

1793 - 1807	Modification of thiol-derived self-assembling monolayers by electron and x-ray irradiation: Scientific and lithographic aspects Zharnikov M, Grunze M
1808 - 1814	Modeling the Al/Si rich oxide (SRO)/Si structure Aceves M, Glaenzer R, Carrillo J, Malik A, Luna A
1815 - 1820	Experimental simulation of integrated optoelectronic sensors based on III nitrides Starikov D, Boney C, Medelci N, Um JW, Bensaoula A, Sanz ML, Fox GE
1821 - 1826	Neutron irradiation effect on radio-frequency magnetron-sputtered GaN thin films and Au/GaN Schottky diodes Wang CW
1827 - 1832	Correlation between the microstructures and the cycling performance of RuO2 electrodes for thin-film microsupercapacitors Kim HK, Seong TY, Lim JH, Ok YW, Cho WI, Shin YH, Yoon YS
1833 - 1835	Development of the ultra-high-sensitive Kr adsorption technique to evaluate the pore-size distribution of thin-film materials Yanazawa H, Mastunaga H, Itoh H, Nakai K, Suzuki I
1836 - 1842	Measurement of the physical and electrical thickness of ultrathin gate oxides Chang HS, Yang HD, Hwang H, Cho HM, Lee HJ, Moon DW
1843 - 1846	Study on a condition for forming the high density of silicon needles with high aspect ratio Kanechika M, Sugimoto N, Mitsushima Y
1847 - 1852	Effects of in situ pyrolytic-gas passivation on reliability of ultrathin silicon oxide gate films Yamada H
1853 - 1865	Molecular dynamics simulation of copper reflow in the damascene process Su MH, Hwang CC, Chang JG, Ju SP
1866 - 1869	Application of phase-imaging tapping-mode atomic-force microscopy to investigate the grain growth and surface morphology of TiSi2 Pang CH, Hing P, See A
1870 - 1877	Etching parylene-N using a remote oxygen microwave plasma Callahan R, Raupp G, Beaudoin S
1878 - 1883	Investigation of in situ trench etching process and Bosch process for fabricating high-aspect-ratio beams for microelectromechanical systems Kok KW, Yoo WJ, Sooriakumar K, Pan JS, Lee EY
1884 - 1890	Plasma surface modification for ion penetration barrier in organosiloxane polymer Mallikarjunan A, Yang GR, Murarka SP, Lu TM
1891 - 1896	SiGe-on-insulator substrate fabricated by melt solidification for a strained-silicon complementary metal-oxide-semiconductor Sugii N, Yamaguchi S, Washio K
1897 - 1900	Ag growth on Mo(112)-O-a and MoO2 surfaces Santra AK, Min BK, Goodman DW
1901 - 1906	Argon and oxygen ion chemistry effects in photoresist etching Greer F, Van L, Fraser D, Coburn JW, Graves DB
1907 - 1913	Molybdenum/aluminum stacked metal taper etching for high-resolution thin-film transistor liquid-crystal display Tsujimura T, Makita A
1914 - 1917	Quantitative evaluation of local charge trapping in dielectric stacked gate structures using Kelvin probe force microscopy Lubarsky G, Shikler R, Ashkenasy N, Rosenwaks Y
1918 - 1922	Interfacial reactions and Schottky barrier properties of composite patterned metal/GaN interfaces Barinov A, Gregoratti L, Casalis L, Kiskinova M
1923 - 1928	Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma Shamiryan D, Baklanov MR, Vanhaelemeersch S, Maex K
1929 - 1934	Copper sample analyzed with an n-doped silicon tip using conducting probe atomic force microscopy Schneegans O, Boyer L, Houze F, Meyer R, Chretien P
1935 - 1938	Dual imaging-unit atomic force microscope for nanometer order length metrology based on reference scales Zhang HJ, Zhang DX, Lin XF
1939 - 1946	Formation and removal of composite halogenated silicon oxide and fluorocarbon films deposited on chamber walls during plasma etching of multiple film stacks Ullal SJ, Singh H, Daugherty J, Vahedi V, Aydil ES
1947 - 1953	Characteristics of copper films deposited on H-2-plasma-treated TaN substrate by chemical vapor deposition Lin CL, Chen PS, Chang CL, Chen MC
1954 - 1960	Strategies for purging the pellicle space for 157 nm lithography Burns RL, Punsalan D, Towidjaja MC, Koros WJ
1961 - 1966	Current gain degradation in SiGeHBTs by hot carriers Gill CR, McAlister SP, Storey C, McKinnon WR, Kovacic S
1967 - 1973	Characterization of Ti-based nanocrystalline ternary nitride films Aouadi SM, Chladek JA, Namavar F, Finnegan N, Rohde SL
1974 - 1981	Resist trimming in high-density CF4/O-2 plasmas for sub-0.1 mu m device fabrication Sin CY, Chen BH, Loh WL, Yu J, Yelehanka P, See A, Chan L
1982 - 1986	Growth and electron field emission characteristics of nanodiamond films deposited in N-2/CH4/H-2 microwave plasma-enhanced chemical vapor deposition Wang SG, Zhang Q, Yoon SF, Ahn J, Wang Q, Zhou Q, Yang DJ
1987 - 1993	Copper drift in methyl-doped silicon oxide film Cui H, Bhat IB, Muraka SP, Lu HQ, Hsia WJ, Catabay W
1994 - 1999	Laser interferometry as a diagnostic tool for the fabrication of reactive ion etching-edge-emitting lasers Aperathitis E, Hatzopoulos Z, Georgakilas A, Richeboeuf L
2000 - 2006	Electrical properties of TiN films deposited by filtered cathodic vacuum arc Cheng YH, Tay BK, Lau SP
2007 - 2012	Plasma etching of thick polynorbornene layers for electronic packaging applications Li YM, Hess DW
2013 - 2016	Etchless fabrication of photonic crystals in silicon Murakowski J, Pustai D, Prather D
2017 - 2023	Wet-etching selectivity of Ag-photodoped AsGeSeS thin films and the fabrication of a planar corrugated one-dimensional photonic crystal by a holographic method Lee HY, Yao TF
2024 - 2031	Design of notched gate processes in high density plasmas Foucher J, Cunge G, Vallier L, Joubert O
2032 - 2035	Influence of potential fluctuations on Landau quantization and spin splitting studied by low temperature scanning tunneling spectroscopy on InAs(110) Morgenstern M, Gudmundsson V, Wiesendanger R
2036 - 2042	Synthesis of organically modified mesoporous silica as a low dielectric constant intermetal dielectric Yu SH, Wong TKS, Pita K, Hu X
2043 - 2046	Influence of parameters and substrates on the diameter of CuInSe2 nanoparticle thin films by rf reactive sputtering Huang SY, Zhang L, Dai ZH, Zhu XG, Qu F, Fu SQ
2047 - 2051	Phase transformation of thin sputter-deposited tungsten films at room temperature Rossnagel SM, Noyan IC, Cabral C
2052 - 2057	Interfaces in copper nanoconnections Heino P, Ristolainen E
2058 - 2064	Electrical characterization of micro-organisms using microfabricated devices Chang H, Ikram A, Kosari F, Vasmatzis G, Bhunia A, Bashir R
2065 - 2070	Exposed area ratio dependent etching in a submicron self-aligned contact etching Kim J, Chu CW, Kang CJ, Han WS, Moon JT
2071 - 2074	Submicron technology for III-nitride semiconductors Palacios T, Calle F, Monroy E, Munoz E
2075 - 2079	Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals Ammendola G, Vulpio M, Bileci M, Nastasi N, Gerardi C, Renna G, Crupi I, Nicotra G, Lombardo S
2080 - 2084	Drastic changes in the field emission characteristics of a Mo-tip field emitter array having PH3-doped a-Si : H as a resistive layer material throughout vacuum packaging processes in'a field emission display Ha JK, Chung BH, Han SY, Choi JO
2085 - 2090	Inductively coupled plasma etching for arrayed waveguide gratings fabrication in silica on silicon technology Bretoiu S, Di Mola D, Fioravanti E, Visona S
2091 - 2095	Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy Loke WK, Yoon SF, Ng TK, Wang SZ, Fan WJ
2096 - 2100	Simple and high-precision asymmetric gate-recess process for ultrafast InP-based high electron mobility transistors Shinohara K, Matsui T, Yamashita Y, Endoh A, Hikosaka K, Mimura T, Hiyamizu S
2101 - 2107	Comparison of experimental and theoretical scanning capacitance microscope signals and their impact on the accuracy of determined two-dimensional carrier profiles Kopanski JJ, Marchiando JF, Rennex BG
2108 - 2112	Positive resist for KrF excimer laser lithography Park SJ, Kim IH, Kang YJ, Lee H, Lee SH, Choi SJ
2113 - 2119	Modeling oxide etching in a magnetically enhanced reactive ion plasma using neural networks Kim B, Kwon KH, Kwon SK, Park JM, Yoo SW, Park KS, Kim BW
2120 - 2125	Influences of reaction products on etch rates and linewidths in a poly-Si/oxide etching process using HBr/O-2 based inductively coupled plasma Miwa K, Mukai T
2126 - 2132	Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy Ban D, Sargent EH, Dixon-Warren SJ, Grevatt T, Knight G, Pakulski G, SpringThorpe AJ, Streater R, White JK
2133 - 2136	Kelvin probe force microscopy of beveled semiconductors Ferguson RS, Fobelets K, Cohen LF
2137 - 2148	Ion flux composition in HBr/Cl-2/O-2 and HBr/Cl-2/O-2/CF4 chemistries during silicon etching in industrial high-density plasmas Cunge G, Inglebert RL, Joubert O, Vallier L, Sadeghi N
2149 - 2153	Microleveling mechanisms and applications of electropolishing on planarization of copper metallization Chang SC, Shieh JM, Huang CC, Dai BT, Li YH, Feng MS
2154 - 2161	Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment Ou KL, Wu WF, Chou CP, Chiou SY, Wu CC
2162 - 2168	Micromolar concentrations of base quenchers impact the apparent efficiency of photoacid generation in chemically amplified resists Pawloski AR, Christian, Nealey PF
2169 - 2172	Edge termination design and simulation for bulk GaN rectifiers Baik KH, Irokawa Y, Ren F, Pearton SJ, Park SS, Lee SK
2173 - 2176	Tunable emission from InAs quantum dots on InP nanotemplates Lefebvre J, Poole PJ, Aers GC, Chithrani D, Williams RL