1955 - 1961 |
Gas-Phase Etching of Si(111)-(7X7) Surfaces by Oxygen Observed by Scanning-Tunneling-Microscopy Donig F, Feltz A, Kulakov M, Hessel HE, Memmert U, Behm RJ |
1962 - 1967 |
Fabrication of Micromachined Silicon Tip Transducer for Tactile Sensing Jiang JC, Faynberg V, White RC, Allen PK |
1968 - 1981 |
Influence of Oxygen on the Formation of Ripples on Si Elst K, Vandervorst W, Alay J, Snauwaert J, Hellemans L |
1982 - 1986 |
Scanning-Tunneling-Microscopy Study of Deoxygenated and Deionized Water Rinsed GaAs(111)-B Surfaces Fukuda T, Hirota Y |
1987 - 1991 |
Development of an Ultrahigh-Vacuum Atomic-Force Microscope for Investigations of Semiconductor Surfaces Kageshima M, Yamada H, Nakayama K, Sakama H, Kawazu A, Fujii T, Suzuki M |
1992 - 1999 |
Nanofabrication of Metal Structures in Gold-Films Deposited on Mica Silva LA, Laitenberger P, Palmer RE |
2000 - 2005 |
Rearrangement of Au(111) Surface as a Result of Scanning with Scanning Tunneling Atomic-Force Microscopes Wang H, Jing J, Chu HT, Henriksen PN |
2006 - 2011 |
Analysis of Highly Ordered Pyrolytic-Graphite Step Defects via Scanning Tunneling Microscope Noll JD, Cooper JB, Myrick ML |
2012 - 2015 |
Digital Scan Model for Focused Ion-Beam-Induced Gas Etching Harriott LR |
2016 - 2020 |
Transmission Electron-Microscopy Specimen Preparation Technique Using Focused Ion-Beam Fabrication - Application to GaAs Metal-Semiconductor Field-Effect Transistors Yamaguchi A, Shibata M, Hashinaga T |
2021 - 2024 |
Novel Scheme for the Preparation of Transmission Electron-Microscopy Specimens with a Focused Ion-Beam Overwijk MH, Vandenheuvel FC, Bullelieuwma CW |
2025 - 2032 |
Hydrogen Plasma Processing of GaAs and AlGaAs Choquette KD, Freund RS, Hong M, Luftman HS, Chu SN, Mannaerts JP, Wetzel RC |
2033 - 2037 |
Ultraviolet-Ozone Oxidation of GaAs(100) and InP(100) Lu ZH, Bryskiewicz B, Mccaffrey J, Wasilewski Z, Graham MJ |
2038 - 2045 |
Identification of Volatile Products in Low-Pressure Hydrocarbon Electron-Cyclotron-Resonance Reactive Ion Etching of InP and GaAs Melville DL, Simmons JG, Thompson DA |
2046 - 2056 |
Ion Velocity Distributions in Helicon Wave Plasmas - Magnetic-Field and Pressure Effects Nakano T, Giapis KP, Gottscho RA, Lee TC, Sadeghi N |
2057 - 2061 |
P-Type ZnSe Grown by Molecular-Beam Epitaxy with Remote Microwave Plasma of N2 Kawakami Y, Ohnakado T, Tsuka M, Tokudera S, Ito Y, Fujita S, Fujita S |
2062 - 2066 |
Galvanomagnetic Study of P-Hg1-xCdxTe Passivated Surfaces Hoschl P, Moravec P, Franc J, Grill R, Milev P, Belas E |
2067 - 2070 |
Electron-Cyclotron-Resonance Sputter Removal of SiO2 on Silicon-Wafers Gopinath V, Salbert GT, Grotjohn TA, Reinhard DK |
2071 - 2080 |
Influence of Reactant Transport on Fluorine Reactive Ion Etching of Deep Trenches in Silicon Arnold JC, Gray DC, Sawin HH |
2081 - 2089 |
Characterization of Silicon Dioxide and Phosphosilicate Glass Deposited Films Rojas S, Zanotti L, Borghesi A, Sassella A, Pignatel GU |
2090 - 2095 |
Comparison of Passivation Films - The Effect of Thermal Cycles and Comparison of Phosphorus-Doped Oxide-Films Wu TH, Obrien K, Hemmes DG |
2096 - 2101 |
Ellipsometric Monitoring and Control of the Rapid Thermal-Oxidation of Silicon Conrad KA, Sampson RK, Massoud HZ, Irene EA |
2102 - 2106 |
Ellipsometric Determination of the Thickness and Refractive-Index of Silicon Films Li M, Yakovlev VA, Wall J, Irene EA |
2107 - 2113 |
Selective and Blanket Copper Chemical-Vapor-Deposition for Ultra-Large-Scale Integration Jain A, Kodas TT, Jairath R, Hampdensmith MJ |
2114 - 2120 |
Tolerance on Alignment Error in Ghost Proximity Effect Correction Moritzumi K, Broers AN |
2121 - 2122 |
Lift-Off Process for Noble-Metals Domansky K, Petelenz D, Janata J |
2123 - 2126 |
Nanofabrication Techniques for a 100 nm-Scale Tungsten Polycide Gate Structure Azuma T, Nakasugi T, Oogi S, Takigami Y, Oyamatsu H |
2127 - 2129 |
Layer Structure Evaluation of Multilayer X-Ray Mirror by Combination of Focused Ion-Beam Etching and Transmission Electron-Microscopy Nakajima K, Sudo S, Yakushiji M, Ishii T, Aoki S |
2130 - 2131 |
Hafnium Dioxide Etch-Stop Layer for Phase-Shifting Masks Shih KK, Chieu TC, Dove DB |
2132 - 2136 |
Photo-Beam and Electron-Beam Lithography Sharing Common Stencil Krupenin VA, Lotkhov SV, Vyshenskii SV |
2137 - 2138 |
Temperature-Measurement for Scanning Tunnel Microscope Samples Using a Detachable Thermocouple John KD, Wan KJ, Yates JT |
2151 - 2151 |
Papers from the 37th International-Symposium on Electron, Ion, and Photon Beams - 1-4 June 1993 Sheraton-Harbor-Island-Hotel San-Diego, California - Preface Hohn FJ |
2152 - 2152 |
Papers from the 37th International-Symposium on Electron, Ion, and Photon Beams - 1-4 June 1993 Sheraton-Harbor-Island-Hotel San-Diego, California - Preface Cerrina F |
2153 - 2153 |
Papers from the 37th International-Symposium on Electron, Ion, and Photon Beams - 1-4 June 1993 Sheraton-Harbor-Island-Hotel San-Diego, California - Preface Okazaki S |
2155 - 2163 |
Lithographic Patterning of Self-Assembled Films Calvert JM |
2164 - 2174 |
Alignment Signal Failure-Detection and Recovery in Real-Time Progler CJ, Chen AC, Hughlett E |
2175 - 2178 |
Marks for Alignment and Registration in Projection Electron Lithography Farrow RC, Liddle JA, Berger SD, Huggins HA, Kraus JS, Camarda RM, Tarascon RG, Jurgensen CW, Kola RR, Fetter L |
2179 - 2182 |
Improvement of Heterodyne Alignment Technique for X-Ray Steppers Koga K, Itoh T, Kusumoto S, Araki K, Yasui J, Takeuchi H, Aoki S |
2183 - 2190 |
Confocal Filtering of the Instantaneous Image in Scanned Dark-Field Alignment Rosenbluth AE, Progler C, Fullenbaum M |
2191 - 2194 |
Novel on-Axis Interferometric Alignment Method with Sub-10-nm Precision Moel A, Moon EE, Frankel RD, Smith HI |
2195 - 2199 |
Focused-Ion Beam-Induced Deposition of Copper Dellaratta AD, Melngailis J, Thompson CV |
2200 - 2203 |
Focused Ion-Beam Xef2 Etching of Materials for Phase-Shift Masks Harriott LR |
2204 - 2209 |
Selective Electroless Plating on Electron-Beam Seeded Nanostructures Lee KL, Thomas RR, Viehbeck A, Osullivan EJ |
2210 - 2213 |
Modification of Polymer Surfaces and the Fabrication of Submicron-Scale Functionalized Structures by Deep-Ultraviolet and Electron-Beam Lithography Wybourne MN, Wu JC, Yan MD, Cai SX, Keana JF |
2214 - 2218 |
Characteristics of Ion-Beam-Assisted Etching of GaAs - Surface Stoichiometry Kosugi T, Iwase H, Gamo K |
2219 - 2223 |
Resolution Limits in Electron-Beam-Induced Tungsten Deposition Kohlmannvonplaten KT, Chlebek J, Weiss M, Reimer K, Oertel H, Brunger WH |
2224 - 2228 |
High-Resolution Reactive Ion Etching and Damage Effects in the Si/Gexsi1-X System Cheung R, Zijlstra T, Vanderdrift E, Geerligs LJ, Verbruggen AH, Werner K, Radelaar S |
2229 - 2232 |
Fabrication of Silicon Nanostructures with Electron-Beam Lithography Using AIN as a Dry-Etch Durable Resist Tada T, Kanayama T |
2233 - 2236 |
Controlling the Profile of Nanostructures Tsutsui K, Hu EL, Wilkinson CD |
2237 - 2243 |
Very-Low Damage Etching of GaAs Murad SK, Wilkinson CD, Wang PD, Parkes W, Sotomayortorres CM, Cameron N |
2244 - 2248 |
Selectively Dry Gate Recessed GaAs Metal-Semiconductor Field-Effect Transistors, High-Electron-Mobility Transistors, and Monolithic Microwave Integrated-Circuits Cameron NI, Ferguson S, Taylor MR, Beaumont SP, Holland M, Tronche C, Soulard M, Ladbrooke PH |
2249 - 2253 |
Characterization of Low-Energy Ion-Induced Damage Using the Multiple-Quantum-Well Probe Technique with an Intervening Superlattice Green DL, Hu EL, Petroff PM, Liberman V, Nooney M, Martin R |
2254 - 2257 |
Fabrication of Parallel Quantum Wires in GaAs/AlGaAs Heterostructures Using AlAs Etch-Stop Layers Grundbacher R, Chang H, Hannan M, Adesida I |
2258 - 2261 |
Characteristics of Selective Reactive Ion Etching of InGaAs/InAlAs Heterostructures Using HBr Plasma Agarwala S, Adesida I, Caneau C, Bhat R |
2262 - 2265 |
300-KHz Pulse Plasma-Etching of GaAs Using a Mixture of Cich3 and H2 Law VJ, Tewordt M, Clary DC, Jones GA |
2266 - 2269 |
Characteristics of in-Situ Cl2 Etched Regrown GaAs/GaAs Interfaces Mui DS, Strand TA, Thibeault BJ, Coldren LA, Petroff PM, Hu EL |
2270 - 2274 |
Etching on Silicon Membranes for Sub-0.25-Mu-M X-Ray Mask Manufacturing Muller KP, Eib NK, Faure TB |
2275 - 2279 |
Controllable Layer-by-Layer Etching of III-V Compound Semiconductors with an Electron-Cyclotron-Resonance Source Ko KK, Pang SW |
2280 - 2283 |
Highly Selective Reactive Ion Etch Process for InP-Based Device Fabrication Using Methane Hydrogen Argon Schramm JE, Hu EL, Merz JL, Brown JJ, Melendes MA, Thompson MA, Brown AS |
2284 - 2287 |
Multilayer Resist Dry-Etching Technology for Deep-Submicron Lithography Tokashiki K, Sato K, Aoto N, Ikawa E |
2288 - 2293 |
Low-Damage Electron-Beam-Assisted Dry-Etching of GaAs and AlGaAs Using Electron-Cyclotron-Resonance Plasma Electron Source Watanabe H, Matsui S |
2294 - 2298 |
Particle-Particle Interaction Effects in Image Projection Lithography Systems Berger SD, Eaglesham DJ, Farrow RC, Freeman RR, Kraus JS, Liddle JA |
2299 - 2303 |
Limits of Low-Energy-Electron Optics Hordon LS, Huang ZR, Maluf N, Browning R, Pease RF |
2304 - 2308 |
Large-Area Electron-Beam Source Livesay WR |
2309 - 2314 |
El-4 Column and Control Petric PF, Gordon MS, Senesi JJ, Haire DF |
2315 - 2318 |
Magnetic Microlens with an Atomically Sharp Field Emitter Terris BD, Zuger O, Rugar D |
2319 - 2322 |
Effect of Beam Condition in Variable-Shaped Electron-Beam Direct Writing for 0.25 Mu-M and Below Hirasawa S, Nakajima K, Tamura T, Aizaki N |
2323 - 2326 |
Continuous Writing Method for High-Speed Electron-Beam Direct Writing System HL-800D Kawano M, Mizuno K, Yoda H, Sakitani Y |
2327 - 2331 |
Oxygen Processed Field-Emission Tips for Microcolumn Applications Kim HS, Yu ML, Staufer U, Muray LP, Kern DP, Chang TH |
2332 - 2341 |
El-4, a New-Generation Electron-Beam Lithography System Pfeiffer HC, Davis DE, Enichen WA, Gordon MS, Groves TR, Hartley JG, Quickle RJ, Rockrohr JD, Stickel W, Weber EV |
2342 - 2345 |
Spatial-Phase-Locked Electron-Beam Lithography - Initial Test-Results Ferrera J, Wong VV, Rishton S, Boegli V, Anderson EH, Kern DP, Smith HI |
2346 - 2351 |
Electron-Beam Direct Writing System Ex-8D Employing Character Projection Exposure Method Hattori K, Yoshikawa R, Wada H, Kusakabe H, Yamaguchi T, Magoshi S, Miyagaki A, Yamasaki S, Takigawa T, Kanoh M, Nishimura S, Housai H, Hashimoto S |
2352 - 2356 |
Laboratory Setup for Projection Electron Lithography and a Monte-Carlo Simulation of Scattering Mask Transmission Miller PD, Gibson JM, Bieeker AJ, Liddle JA |
2357 - 2361 |
Electron-Beam Block Exposure System for a 256-M Dynamic Random-Access Memory Sakamoto K, Fueki S, Yamazaki S, Abe T, Kobayashi K, Nishino H, Satoh T, Takemoto A, Ookura A, Oono M, Sago S, Oae Y, Yamada A, Yasuda H |
2362 - 2366 |
Integration of Microstructures Onto Negative Electron-Affinity Cathodes - Fabrication and Operation of an Addressable Negative Electron-Affinity Cathode Santos EJ, Macdonald NC |
2367 - 2372 |
Proximity Effects in Low-Energy Electron-Beam Lithography Stark TJ, Edenfeld KM, Griffis DP, Radzimski ZJ, Russell PE |
2373 - 2377 |
Multiple Beam-Shaping Diaphragm for Efficient Exposure of Gratings Elsner H, Hahmann P, Dahm G, Koops HW |
2378 - 2385 |
Electrodynamics of Fast Beam Blankers Gesley M, Colby D, Raymond F, Mcclure D, Abboud F |
2386 - 2389 |
Constructive 3-Dimensional Lithography with Electron-Beam-Induced Deposition for Quantum Effect Devices Koops HW, Kretz J, Rudolph M, Weber M |
2390 - 2396 |
Feasibility Study of New Graybeam Writing Strategies for Raster Scan Mask Generation Murray A, Abboud F, Raymond F, Berglund CN |
2397 - 2399 |
Use of a Variable Shaped Beam Electron Lithography System for Diffractive Optics Components Manufacturing Trotel J |
2400 - 2403 |
Intelligent Design Splitting in the Stencil Mask Technology Used for Electron-Beam and Ion-Beam Lithography Behringer U, Engelke H |
2404 - 2408 |
Edge Roughness of a 200-nm Pitch Resist Pattern Fabricated by Ion Projection Lithography Brunger WH, Blaschke J, Torkler M, Buchmann LM |
2409 - 2415 |
Projection Ion-Beam Lithography Loschner H, Stengl G, Chalupka A, Fegerl J, Fischer R, Hammel E, Lammer G, Malek L, Nowak R, Traher C, Vonach H, Wolf P, Hill RW |
2416 - 2419 |
Focused-Ion-Beam Damage-Etch Patterning for Isolation of Quantum Structures in AlGaAs/GaAs Templeton IM, Fallahi M, Charbonneau S, Champion HG, Allard LB |
2420 - 2426 |
New Characterization Method of Ion Current-Density Profile Based on Damage Distribution of Ga+ Focused-Ion Beam Implantation in GaAs Benassayag G, Vieu C, Gierak J, Sudraud P, Corbin A |
2427 - 2431 |
Effects of Focused Ion-Beam Reticle Repair on Optical Lithography at I-Line and Deep-Ultraviolet Wavelengths Prewett PD, Martin B, Eastwood AW, Watson JG |
2432 - 2435 |
Ion Exposure Characterization of a Chemically Amplified Epoxy Resist Stumbo DP, Wolfe JC |
2436 - 2440 |
Quasi-Periodic Nanostructures in Focused Ion-Beam Deposited Tungsten at High Angles of Incidence Xu X, Melngailis J |
2441 - 2445 |
Investigations of Artificial Nanostructures and Lithography Techniques with a Scanning Probe Microscope Griesinger UA, Kaden C, Lichtenstein N, Hommel J, Lehr G, Bergmann R, Menschig A, Schweizer H, Hillmer H, Koops HW, Kretz J, Rudolph M |
2446 - 2451 |
Optimization of Aerial Image Quality Turner S, Cerrina F |
2452 - 2455 |
Time-of-Flight Electron Spectrometer for Voltage Measurements on Integrated-Circuits Dinnis AR, Khursheed A |
2456 - 2462 |
Metrology of High-Resolution Resist Structures on Insulating Substrates Difabrizio E, Grella L, Luciani L, Gentili M, Baciocchi M, Figliomeni M, Mastrogiacomo L, Maggiora R, Leonard Q, Cerrina F, Molino M, Powderly D |
2463 - 2467 |
Metrology for Replicated X-Ray Masks Using an Electron-Beam Machine Luciani L, Difabrizio E, Grella L, Baciocchi M, Figliomeni M, Gentili M, Mastrogiacomo L, Maggiora R, Kraspenova A, Reilly M |
2468 - 2472 |
Real-Time Latent Image Monitoring During Holographic Fabrication of Submicron Diffraction Gratings Gregus JA, Green CA, Yoon E, Ostermayer FW, Hayes TR, Pawelek R, Gottscho RA, Sohail S, Naqvi H |
2473 - 2476 |
Line-Profile Measurement with a Scanning Probe Microscope Griffith JE, Marchman HM, Miller GL, Hopkins LC, Vasile MJ, Schwalm SA |
2477 - 2481 |
Simulation of X-Ray Generation Based on Electron Trajectory Calculation Koshishiba H, Yoshimura M, Nakagawa Y |
2482 - 2486 |
Metrology for Phase-Shifting Masks Marchman HM, Vaidya S, Pierrat C, Griffith J |
2487 - 2492 |
Schottky Field-Emission Based Scanning Auger Microprobe Narum DH |
2493 - 2496 |
Fabrication of a Novel Split-Backgate Transistor by in-Situ Focused Ion-Beam Lithography and Molecular-Beam Epitaxial Regrowth Brown KM, Linfield EH, Jones GA, Ritchie DA, Thompson JH |
2497 - 2501 |
Micromachining in III-V Semiconductors Using Wet Photoelectrochemical Etching Khare R, Hu EL, Brown JJ, Melendes MA |
2502 - 2508 |
Fabrication Limits of Nanometer-T and Gamma-Gates - Theory and Experiment Maile BE |
2509 - 2513 |
Multiwavelength Distributed-Bragg-Reflector Laser Array Fabricated Using Near-Field Holographic Printing with an Electron-Beam Generated Phase Grating Mask Tennant DM, Koch TL, Verdiell JM, Feder K, Gnall RP, Koren U, Young MG, Miller BI, Newkirk MA, Tell B |
2514 - 2518 |
Fabrication of Curved Mirrors for Visible Semiconductor-Lasers Using Electron-Beam Lithography and Chemically Assisted Ion-Beam Etching Unger P, Boegli V, Buchmann P, Germann R |
2519 - 2523 |
Fabrication of Sub-10 nm Structures by Lift-Off and by Etching After Electron-Beam Exposure of Poly(Methylmethacrylate) Resist on Solid Substrates Chen W, Ahmed H |
2524 - 2527 |
10 nm Si Pillars Fabricated Using Electron-Beam Lithography, Reactive Ion Etching, and HF Etching Fischer PB, Dai K, Chen E, Chou SY |
2528 - 2531 |
Design and Analysis of InAs/AlSb Ballistic Constrictions for High-Temperature Operation and Low Gate Leakage Koester SJ, Bolognesi CR, Hu EL, Kroemer H, Rooks MJ, Snider GL |
2532 - 2537 |
Self-Limiting Oxidation of Si Nanowires Liu HI, Biegelsen DK, Johnson NM, Ponce FA, Pease RF |
2538 - 2543 |
Integrated Silicon Process for Microdynamic Vacuum Field-Emission Cathodes Zhang ZL, Macdonald NC |
2544 - 2547 |
Investigation of the Longitudinal and Lateral Distribution of Implantation-Induced Damage in GaAs/InGaAs Heterostructures Kieslich A, Doleschel H, Faller F, Forchel A, Stoffel NG |
2548 - 2551 |
Fabrication of Freestanding Structures and Proposed Applications in Tunneling Sensors Moore DF, Lutwyche MI, Hoole AC |
2552 - 2555 |
Self-Aligned Fabrication of Arrays of Back-to-Back External 45-Degrees Reflectors Integrated with Ridge-Wave-Guide Lasers for Surface-Emitting High-Power Semiconductor-Laser Sources in AlGaAs/GaAs Porkolab GA, Wolf ED |
2556 - 2559 |
Optical Analysis of Quantum-Confined Stark-Effect in Overgrown InGaAs/InP Quantum Wires Schilling O, Forchel A, Kohl A, Brittner S |
2560 - 2564 |
Multilayer Resist Process for Asymmetric Gate Recess in Field-Effect Transistors Ballegeer DG, Nummila K, Adesida I |
2565 - 2569 |
New Technique for Computation and Challenges for Electron-Beam Lithography Huang XK, Bazan G, Bernstein GH |
2570 - 2573 |
Ultrahigh-Resolution Magnetic Force Microscope Tip Fabricated Using Electron-Beam Lithography Fischer PB, Wei MS, Chou SY |
2574 - 2578 |
Directly Patterned Low-Voltage Planar Tungsten Lateral Field-Emission Structures Hoole AC, Moore DF, Broers AN |
2579 - 2583 |
Fabrication of Mesoscopic Structures by Channeled Ion-Implantation for the Study of Boundary Scattering of Electrons Hornsey RI, Cleaver JR, Ahmed H |
2584 - 2587 |
Fabrication and Optical-Properties of InGaAs/InP Quantum Wires and Dots with Strong Lateral Quantization Effects Ils P, Michel M, Forchel A, Gyuro I, Klenk M, Zielinski E |
2588 - 2591 |
Fabrication of Hard X-Ray Phase Zone-Plate by X-Ray-Lithography Krasnoperova AA, Xiao J, Cerrina F, Difabrizio E, Luciani L, Figliomeni M, Gentili M |
2592 - 2596 |
Effects of Low-Energy Ion Exposure on Modulation-Doped GaAs Heterostructures Li F, Spencer GF, Wang T, Andrews CC, Kirk WP |
2597 - 2602 |
Determination of Acid Diffusion Rate in a Chemically Amplified Resist with Scanning Tunneling Microscope Lithography Perkins FK, Dobisz EA, Marrian CR |
2603 - 2606 |
Fabrication of Y-Gate, Submicron Gate Length GaAs Metal-Semiconductor Field-Effect Transistors Ren F, Pearton SJ, Lothian JR, Abernathy CR |
2607 - 2611 |
Integrated Approach to Quantum-Dot Fabrication Rishton SA, Lee YH, Milkove KR, Hong JM, Boegli V, Defranza M, Sivan U, Kern DP |
2612 - 2614 |
High-Performance Sub-0.1 Mu-M Silicon N-Metal Oxide Semiconductor Transistors with Composite Metal Polysilicon Gates Rishton SA, Mii YJ, Kern DP, Taur Y, Lee KY, Lii T, Jenkins K, Quinlan D, Brown T, Danner D, Sewell F, Polcari M |
2615 - 2620 |
Electron-Beam Lithography for Advanced Device Prototyping - Process Tool Metrology Rosenfield MG, Thomson MG, Coane PJ, Kwietniak KT, Keller J, Klaus DP, Volant RP, Blair CR, Tremaine KS, Newman TH, Hohn FJ |
2621 - 2624 |
Ridge-Wave-Guide Sidewall-Grating Distributed-Feedback Structures Fabricated by X-Ray-Lithography Wong VV, Choi WY, Carter JM, Fonstad CG, Smith HI, Chung Y, Dagli N |
2625 - 2628 |
Fabrication of 100-nm T-Gates for Monolithic Microwave Integrated-Circuits Using X-Ray-Lithography Gupta N, Hector SD, Rhee KW, Smith HI |
2629 - 2632 |
Focused Ion-Beam Interaction with a Shallow 2-Dimensional Electron-Gas Soh YA, Snider GL, Skvarla MJ, Craighead HG |
2633 - 2636 |
Diffraction Gratings for Measuring Slow Mode Surface-Plasmon Polaritons Tiberio RC, Pugh GM, Sjodin T, Reed BW, Sparks PD |
2637 - 2640 |
Nanofabrication of Photonic Lattice Structures in GaAs/AlGaAs Wendt JR, Vawter GA, Gourley PL, Brennan TM, Hammons BE |
2641 - 2644 |
Low-Loss Beamwidth Transformers on InP with Reduced Requirements on Lithographic Resolution Zengerle R, Bruckner HJ, Hubner B, Weiershausen W |
2645 - 2650 |
Etched-Quartz Fabrication Issues for a 0.25 Mu-M Phase-Shifted Dynamic Random-Access Memory Application Ferguson R, Martino R, Budd R, Hughes G, Skinner J, Staples J, Ausschnitt C, Weed J |
2651 - 2658 |
Mask Assisted Off-Axis Illumination Technique for Random Logic Garofalo J, Biddick CJ, Kostelak RL, Vaidya S |
2659 - 2664 |
Edge Location Errors in Cr-Less and rim-Type Phase-Shifting Lithography Weiss M, Henke W, Ronse K |
2665 - 2668 |
Evaluation of Repair Phase and Size Tolerance for a Phase-Shift Mask Ohtsuka H, Kuwahara K, Onodera T |
2669 - 2674 |
Phase-Shifting Lithography - Maskmaking and Its Application Watanabe H, Todokoro Y |
2675 - 2679 |
Optical Projection System for Gigabit Dynamic Random-Access Memories Jeong H, Markle DA, Owen G, Pease RF, Grenville A |
2680 - 2685 |
Key Technologies in Lower Submicron Lithography - Ultimate Super Resolution Imaging-System and Chemically Amplified Resist Using the Self-Solubility Acceleration Effect Nakase M, Inoue S, Fujisawa T, Kihara N, Ushirogouchi T |
2686 - 2691 |
Direct Aerial Image Measurement as a Method of Testing High Numerical Aperture Microlithographic Lenses Partlo WN, Fields CH, Oldham WG |
2692 - 2696 |
Performance of 0.2 Mu-M Optical Lithography Using KrF and ArF Excimer-Laser Sources Yamashita K, Endo M, Sasago M, Nomura N, Nagano H, Mizuguchi S, Ono T, Sato T |
2697 - 2699 |
Optical-Properties of Hydrogenated Amorphous-Carbon Film for Attenuated Phase-Shift Mask Applications Callegari A, Pomerene AT, Hovel HJ, Babich ED, Purushothaman S, Shaw JM |
2700 - 2704 |
Image Monitor for Markle-Dyson Optics Grenville A, Owen G, Pease RF |
2705 - 2713 |
Printing of Phase-Shifting Mask Defects Kostelak RL, Pierrat C, Garofalo JG, Vaidya S |
2714 - 2719 |
Advanced Dynamic Process Simulation for an Excimer-Laser Lithography Ohfuji T, Nalamasu O, Stone DR |
2720 - 2724 |
Evaluation of Depth-of-Focus in Photolithography at 193 and 248 nm for Feature Sizes of 0.25 Mu-M and Below Rothschild M, Doran SP, Barouch E, Hollerbach U, Orszag SA |
2725 - 2732 |
Process Issue Improvement of Surface Image Transfer Technique - Depth-of-Focus Characteristics and Their Comparison with Simulation Results Tomo Y, Ogawa T, Nagayama T, Kimura M |
2733 - 2740 |
Reduction and Elimination of Proximity Effects Dobisz EA, Marrian CR, Salvino RE, Ancona MA, Perkins FK, Turner NH |
2741 - 2745 |
Proxecco Proximity Effect Correction by Convolution Eisenmann H, Waas T, Hartmann H |
2746 - 2753 |
Efficiency of Electron-Beam Proximity Effect Correction Groves TR |
2754 - 2757 |
Analytical Evaluation of the Energy Deposition Function in Electron-Beam Lithography in the Case of a Composite Substrate Raptis I, Glezos N, Hatzakis M |
2758 - 2761 |
2 Methods of Experimental Evaluation of Long-Range Proximity Function Components in Electron-Beam Lithography Bogdanov AL, Polyakov A |
2762 - 2767 |
Fast Proximity Effect Correction - An Extension of Pyramid for Thicker Resists Cook BD, Lee SY |
2768 - 2772 |
Incident Dose Modification for Proximity Effect Correction Thomson MG |
2773 - 2778 |
Chemical Amplification Electron-Beam Positive Resist Process Free from Surface Insoluble Layer Fujino T, Maeda H, Kumada T, Moriizumi K, Kubota S, Koezuka H, Morimoto H, Watakabe Y, Tsubouchi N |
2779 - 2782 |
Single-Component Deep-Ultraviolet and X-Ray Resists - The Lithographic Behavior of Poly((2-Methyl-4-T-Butoxycarbonyloxystyrene)Sulfone) and Poly((3-Chloro-4-T-Butoxycarbonyloxystyrene)Sulfone) Neenan TX, Kumar U, Kometani JM, Novembre AE |
2783 - 2788 |
Single-Layer Chemically Amplified Photoresists for 193-nm Lithography Wallraff GM, Allen RD, Hinsberg WD, Larson CF, Johnson RD, Dipietro R, Breyta G, Hacker N, Kunz RR |
2789 - 2793 |
New Silicon-Rich Silylating Reagents for Dry-Developed Positive-Tone Deep-Ultraviolet Lithography Wheeler DR, Hutton S, Stein S, Baiocchi F, Cheng M, Taylor G |
2794 - 2797 |
Water-Soluble Conducting Polyanilines - Applications in Lithography Angelopoulos M, Patel N, Shaw JM, Labianca NC, Rishton SA |
2798 - 2806 |
Relationship Between Resist Performance and Reaction Order in a Chemically Amplified Resist System Fedynyshyn TH, Szmanda CR, Blacksmith RF, Houck WE, Root JC |
2807 - 2811 |
Evaluation and Application of a Very High-Performance Chemically Amplified Resist for Electron-Beam Lithography Lee KY, Huang WS |
2812 - 2817 |
Development of Positive Electron-Beam Resist for 50 kv Electron-Beam Direct-Writing Lithography Sakamizu T, Yamaguchi H, Shiraishi H, Murai F, Ueno T |
2818 - 2822 |
Imaging Dissolution Rate Monitor - Mapping the Photoresist Response Sullivan M, Taylor JW |
2823 - 2828 |
Self-Assembled Monolayer Electron-Beam Resists on GaAs and SiO2 Lercel MJ, Tiberio RC, Chapman PF, Craighead HG, Sheen CW, Parikh AN, Allara DL |
2829 - 2833 |
Effect of Low-Solubility Surface-Layer on Development of AZ-Pf514 Krasnoperova AA, Turner SW, Ocola L, Cerrina F |
2834 - 2838 |
Patterning of X-Ray Masks Using the Negative-Acting Resist P(Si-CMS) Mixon DA, Novembre AE, Tai WW, Jurgensen CW, Frackoviak J, Trimble LE, Kola RR, Celler GK |
2839 - 2844 |
Parametric Modeling of Photoelectron Effects in X-Ray-Lithography Ocola LE, Cerrina F |
2845 - 2849 |
Optimization Design Program for Chemically Amplified Resist Process Pan SW, Reilly MT, Taylor JW, Cerrina F |
2850 - 2854 |
Soft-X-Ray Photochemistry of Chemisorbed Self-Assembled Monolayers Suh D, Simons JK, Taylor JW, Koloski TS, Calvert JM |
2855 - 2861 |
Dissolution Rate Properties of 3-Component Deep-Ultraviolet Positive Photoresists Thackeray JW, Denison M, Fedynyshyn TH, Georger J, Mori JM, Orsula GW |
2862 - 2866 |
Simulation of Locally Enhanced 3-Dimensional Diffusion in Chemically Amplified Resists Zuniga M, Wallraff G, Tomacruz E, Smith B, Larson C, Hinsburg WD, Neureuther AR |
2867 - 2871 |
Insolubilization Mechanism of Chemically Amplified Negative Photoresists Yamaguchi A, Kishimura S, Tsujita K, Morimoto H, Tsukamoto K, Nagata H |
2872 - 2875 |
Study of Electron-Beam Patterning of Resist on Tungsten X-Ray Masks Cummings KD, Resnick DJ, Frackoviak J, Kola RR, Trimble LE, Grant B, Silverman S, Haas L, Jennings B |
2876 - 2880 |
Patterning Issues of 256Mb Dynamic Random-Access Memory X-Ray Masks Koek B, Jennings B, Grant R |
2881 - 2887 |
Effect of Mask Absorber Thickness on X-Ray-Exposure Latitude and Resolution Mccord MA, Wagner A, Seeger D |
2888 - 2896 |
Overlay Performance of X-Ray Steppers in IBM Advance Lithography Facility Progler CJ, Chen AC, Gunther TA, Kaiser P, Cooper KA, Hughlett RE |
2897 - 2901 |
Sub-Half-Micron Metal-Oxide-Semiconductor Device Fabrication Using a Compact Synchrotron-Radiation Lithography System Fujii K, Tsuboi S, Yoshihara T, Tanaka Y, Suzuki K, Setoguchi S, Miyatake T |
2902 - 2905 |
Experimental-Study of Aerial Images in X-Ray-Lithography Guo JZ, Leonard Q, Cerrina F, Difabrizio E, Luciani L, Gentili M, Frank J |
2906 - 2909 |
Fabrication of Flip-Bonded Mesa Masks for X-Ray-Lithography Schattenburg ML, Polce NA, Smith HI, Stein R |
2910 - 2919 |
Fabrication of High-Performance 512K Static-Random Access Memories in 0.25 Mu-M Complementary Metal-Oxide-Semiconductor Technology Using X-Ray-Lithography Viswanathan R, Seeger D, Bright A, Bucelot T, Pomerene A, Petrillo K, Blauner P, Agnello P, Warlaumont J, Conway J, Patel D |
2920 - 2925 |
X-Ray Mask Membrane Motion in Narrow-Gap Lithography - Hydrodynamic Model and Experiment Yanof AW, Zipfel GL, Moon EE |
2926 - 2929 |
Repair of Soft-X-Ray Optical-Elements by Stripping and Redeposition of Mo/Si Reflective Coatings Early K, Windt DL, Waskiewicz WK, Wood OR, Tennant DM |
2930 - 2937 |
Physical-Properties of the X-Ray Membrane Materials Elkhakani MA, Chaker M |
2938 - 2942 |
Development of an Electron-Beam Process for the Fabrication of X-Ray Nanomasks Gentili M, Grella L, Difabrizio E, Luciani L, Baciocchi M, Figliomeni M, Maggiora R, Mastrogiacomo L, Cerrina F |
2943 - 2946 |
Pattern-Formation in Amorphous Wnx by Low-Temperature Electron-Cyclotron-Resonance Etching for Fabrication of X-Ray Mask Inoue T, Kanayama T, Komuro M |
2947 - 2952 |
Stress and Microstructure of Sputter-Deposited Thin-Films - Molecular-Dynamics Simulations and Experiment Fang CC, Jones F, Kola RR, Celler GK, Prasad V |
2953 - 2957 |
Practical Considerations in X-Ray Mask Mounting Methodology Laird DL, Laudon MF, Engelstad RL |
2958 - 2963 |
Resolution Limits and Process Latitude of X-Ray Mask Fabrication Mccord MA, Wagner A, Donohue T |
2964 - 2970 |
Defect Coverage Profile and Propagation of Roughness of Sputter-Deposited Mo/Si Multilayer Coating for Extreme-Ultraviolet Projection Lithography Nguyen KB, Nguyen TD |
2971 - 2975 |
X-Ray Mask Replication Using Square Synchrotron-Radiation Illumination Reilly M, Wells GM, Guo J, Wallace JP, Edwards N, Cerrina F, Melngailis J |
2976 - 2980 |
Performance of a Wide-Field Flux Delivery System for Synchrotron X-Ray-Lithography Silverman JP, Archie CN, Oberschmidt JM, Rippstein RP |
2981 - 2985 |
Simultaneous-Optimization of Spectrum, Spatial Coherence, Gap, Feature Bias, and Absorber Thickness in Synchrotron-Based X-Ray-Lithography Hector SD, Smith HI, Schattenburg ML |
2986 - 2989 |
Soft-X-Ray Production from Laser-Produced Plasmas for Lithography Applications Spitzer RC, Kauffman RL, Orzechowski T, Phillion DW, Cerjan C |
2990 - 2993 |
Low-Stress and Optically Transparent Chromium-Oxide Layer for X-Ray Mask Making Trube J, Yabe H, Aya S, Marumoto K, Matsui Y |
2994 - 2996 |
X-Ray Mask Fabrication Using Advanced Optical Lithography Tsuboi S, Suzuki K |
2997 - 3002 |
X-Ray Stepper Aiming at 0.2-Mu-M Synchrotron Orbital Radiation Lithography Uchida N, Kuwabara O, Ishibashi Y, Kikuiri N, Hirano R, Nishida J, Nishizaka T, Kikuchi Y, Yoshino H |
3003 - 3007 |
Polycapillary Collimator for Point-Source Proximity X-Ray-Lithography Vartanian M, Youngman R, Gibson D, Drumheller J, Frankel R |
3008 - 3011 |
Evaluation of Beryllium Foils for X-Ray-Lithography Beamlines Wells GM, Brodsky EL, Cerrina F, Waldo WG |