Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.18, No.6 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (194 articles)

2611 - 2614	Growth of low-defect density Ino(0.25)Gao(0.75)As on GaAs by molecular beam epitaxy Pickrell GW, Chang KL, Epple JH, Cheng KY, Hsieh KC
2615 - 2619	Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors Yen CH, Lin KP, Yu KH, Chang WL, Lin KW, Liu WC
2620 - 2623	Diode structures based on p-GaN for optoelectronic applications in the near-ultraviolet range of the spectrum Starikov D, Berishev I, Um JW, Badi N, Medelci N, Tempez A, Bensaoula A
2624 - 2626	Study sf current leakage in InAs p-i-n photodetectors Lin RM, Tang SF, Kuan CH
2627 - 2630	Low temperature deposition for high performance photodetector He L
2631 - 2634	Effect of growth interruption and the introduction of H-2 on the growth of InGaN/GaN multiple quantum wells Moon YT, Kim DJ, Song KM, Kim DW, Yi MS, Noh DY, Park SJ
2635 - 2639	Site control of InAs quantum dots on GaAs surfaces patterned by in situ electron-beam lithography Ishikawa T, Kohmoto S, Nishikawa S, Nishimura T, Asakawa K
2640 - 2645	Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process Tsutsumi T, Ishii K, Hiroshima H, Hazra S, Yamanaka M, Sakata I, Taguchi H, Suzuki E, Tomizawa K
2646 - 2649	Deposition of Fe clusters on Si surfaces Upward MD, Cotier BN, Moriarty P, Beton PH, Baker SH, Binns C, Edmonds K
2650 - 2652	Initial growth analysis of Si overlayers on cerium oxide layers Kim CG
2653 - 2657	Electrical properties of self-organized nanostructures of alkanethiol-encapsulated gold particles Huang SJ, Tsutsui G, Sakaue H, Shingubara S, Takahagi T
2658 - 2663	Atomic force microscopy of reaction of ammonia gas with crystalline substituted benzoic acid Zeng QD, Wang C, Bai CL, Li Y, Yan XJ
2664 - 2668	Effect of photoenhanced minority carriers in metal-oxide-semiconductor capacitor studied by scanning capacitance microscopy Shin S, Kye JI, Pi UH, Khim ZG, Hong JW, Park SI, Yoon S
2669 - 2675	Integrated atomic force microscopy array probe with metal-oxide-semiconductor field effect transistor stress sensor, thermal bimorph actuator, and on-chip complementary metal-oxide-semiconductor electronics Akiyama T, Staufer U, de Rooij NF, Lange D, Hagleitner C, Brand O, Baltes H, Tonin A, Hidber HR
2676 - 2680	X-ray source combined ultrahigh-vacuum scanning tunneling microscopy for elemental analysis Hasegawa Y, Tsuji K, Nakayama K, Wagatsuma K, Sakurai T
2681 - 2683	New method for imaging atoms Dou JY, Chen EG, Zhu CC, Yang DQ
2684 - 2687	Dual tunneling-unit scanning tunneling microscope for practical length measurement based on reference scales Zhang HJ, Wu L, Huang F, Cheng SW
2688 - 2691	Effect of metal-insulator-semiconductor structure derived space charge field on the tip vibration signal in electrostatic force microscopy Hong SB, Woo JW, Shin HJ, Kim E, Kim KH, Jeon JU, Pak YE, No K
2692 - 2697	Wide dynamic range silicon diaphragm vacuum sensor by electrostatic servo system Miyashita H, Esashi M
2698 - 2703	Field emission properties of nanocomposite carbon nitride films Alexandrou I, Baxendale M, Rupesinghe NL, Amaratunga GAJ, Kiely CJ
2704 - 2709	Study of the emission performance of carbon nanotubes Lei W, Wang BP, Tong LS, Yin HC, Tu Y, Zhu CC
2710 - 2713	Influence of diamond film thickness on field emission characteristics Ji H, Jin ZS, Gu CZ, Wang JY, Lu XY, Liu BB, Gao CX, Yuan G, Wang WB
2714 - 2721	Characterization of the surface morphology and electronic properties of microwave enhanced chemical vapor deposited diamond films Fitzgerald AG, Fan Y, John P, Troupe CE, Wilson JIR
2722 - 2729	Enhancement in field emission of silicon microtips by bias-assisted carburization Kichambare PD, Tarntair FG, Chen LC, Chen KH, Cheng HC
2730 - 2736	Polysubstituted derivatives of triphenylene as high resolution electron beam resists for nanolithography Robinson APG, Palmer RE, Tada T, Kanayama T, Allen MT, Preece JA, Harris KDM
2737 - 2744	Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists Saifullah MSM, Kurihara K, Humphreys CJ
2745 - 2749	How to make polyvinylphenol inhibitable by diazonaphthoquinone sulfonates Yan ZL, Yeh TF, He XH, Reiser A, Schadt FL, Fincher CR
2750 - 2756	High performance micropane electron beam window Dougal RA, Liu SY
2757 - 2762	Design and development of plasma enhanced chemical vapor deposition universal antireflective layer films for deep subquarter micron deep ultraviolet applications Wang Y, MacWilliams K, Karim Z, Fan W, Reilly M, Holden JM
2763 - 2768	Effects of fluorocarbon polymer deposition on the selective etching of SiO2/photoresist in high density plasma Chu C, Ahn T, Kim J, Jeong S, Moon J
2769 - 2773	Direct pattern etching for micromachining applications without the use of a resist mask Cho BO, Ryu JH, Hwang SW, Lee GR, Moon SH
2774 - 2779	Electron population above 13.5 eV in ultrahigh frequency and inductively coupled plasmas through C2F4/CF3I and C4F8/Ar gas mixtures Nakano T, Samukawa S
2780 - 2784	Study of grass formation in GaAs backside via etching using inductively coupled plasma system Nam PS, Ferreira LM, Lee TY, Tu KN
2785 - 2793	Two-channel spectroscopic reflectometry for in situ monitoring of blanket and patterned structures during reactive ion etching Stutzman BS, Huang HT, Terry FL
2794 - 2798	Development and qualification of a vacuum pumping system for metalorganic vapor phase epitaxy copper precursors Davis RP, Abreu RA
2799 - 2802	Oxygen plasma induced degradation in InGaAs/InP heterostructures Driad R, McKinnon WR, McAlister SP
2803 - 2807	CH4/H-2 reactive ion etching induced damage of InP Neitzert HC, Fang R, Kunst M, Layadi N
2808 - 2813	Characterization of showerhead performance at low pressure Hash DB, Mihopoulos T, Govindan TR, Meyyappan M
2814 - 2819	Thermal stability and adhesion improvement of Ag deposited on Pa-n by oxygen plasma treatment Gadre KS, Alford TL
2820 - 2825	Thermal modeling of a polysilicon-metal test structure used for thermally induced voltage alteration characterization Tangyunyong P, Benson D, Cole EI
2826 - 2834	Influence of underlying interlevel dielectric films on extrusion formation in aluminum interconnects Chen F, Li BZ, Sullivan TD, Gonzalez CL, Muzzy CD, Lee HK, Levy MD, Dashiell MW, Kolodzey J
2835 - 2841	Characterization of additive systems for damascene Cu electroplating by the superfilling profile monitor Chiu SY, Shieh JM, Chang SC, Lin KC, Dai BT
2842 - 2847	Effect of various sputtering parameters on Ta phase formation using an I-Optimal experimental design Whitman CS
2848 - 2850	Electrical characteristics of metal-ferroelectric (PbZrxTi1-x O-3)-insulator (Ta2O5)-silicon structure for nonvolatile memory applications Sze CY, Lee JYM
2851 - 2856	Electronic structure and mechanical properties of hard coatings from the chromium-tungsten nitride system Hones P, Diserens M, Sanjines R, Levy F
2857 - 2861	Electron-beam direct writing using RD2000N for fabrication of nanodevices Dutta A, Lee SP, Hayafune Y, Oda S
2862 - 2864	Thin SiO2 layers on Si(111) with ultralow atomic step density Oliver AC, Blakely JM
2876 - 2876	Microelectronics and nanometer structures - Processing, measurement, and phenomena - Preface Melngailis J
2877 - 2880	Implementing advanced lithography technology: A 100 MHz, 1 V digital signal processor fabricated with phase shifted gates Watson GP, Kizilyalli IC, Nalamasu O, Cirelli RA, Miller M, Wang Y, Pati B, Radosevich J, Kohler R, Freyman R, Klemens F, Mansfield W, Vaidya H, Timko A, Trimble L, Frackoviak J
2881 - 2885	Lithographic patterning and confocal imaging with zone plates Gil D, Menon R, Carter DJD, Smith HI
2886 - 2890	Sub-100 nm silicon on insulator complimentary metal-oxide semiconductor transistors by deep ultraviolet optical lithography Fritze M, Burns J, Wyatt PW, Chen CK, Gouker P, Chen CL, Keast C, Astolfi D, Yost D, Preble D, Curtis A, Davis P, Cann S, Deneault S, Liu HY
2891 - 2895	Defect formation and structural alternation in modified SiO2 glasses by irradiation with F-2 laser or ArF excimer laser Ikuta Y, Kikugawa S, Hirano M, Hosono H
2896 - 2899	Shape engineering: A novel optical proximity correction technique for attenuated phase-shift mask Pau S, Bolan K, Blakey M, Nalamasu O
2900 - 2904	Analytic study of gratings patterned by evanescent near field optical lithography McNab SJ, Blaikie RJ, Alkaisi MM
2905 - 2910	Development of the large field extreme ultraviolet lithography camera Watanabe T, Kinoshita H, Nii H, Li Y, Hamamoto K, Oshino T, Sugisaki K, Murakami K, Irie S, Shirayone S, Gomei Y, Okazaki S
2911 - 2915	Extreme ultraviolet alignment and testing of a four-mirror ring field extreme ultraviolet optical system Goldberg KA, Naulleau P, Batson P, Denham P, Anderson EH, Chapman H, Bokor J
2916 - 2920	At-wavelength extreme ultraviolet lithography mask inspection using a Mirau interferometric microscope Haga T, Takenaka H, Fukuda M
2921 - 2925	Reticle's contribution to critical dimension control and overlay in extreme-ultraviolet lithography Meiling H, Benschop JPH, Loopstra E, van der Werf JE, Leenders MHA
2926 - 2929	Extreme ultraviolet mask defect simulation: Low-profile defects Pistor T, Deng YF, Neureuther A
2930 - 2934	Characterization of extreme ultraviolet lithography mask defects from extreme ultraviolet far-field scattering patterns Yi M, Jeong S, Rekawa S, Bokor J
2935 - 2938	Extreme ultraviolet holographic microscopy and its application to extreme ultraviolet mask-blank defect characterization Lee SH, Bokor J, Naulleau P, Jeong ST, Goldberg KA
2939 - 2943	Extreme ultraviolet carrier-frequency shearing interferometry of a lithographic four-mirror optical system Naulieau PP, Goldberg KA, Bokor J
2944 - 2949	Effects of smoothing on defect printability at extreme ultraviolet wavelengths Cardinale GF, Ray-Chaudhuri AK, Fisher A, Mangat PSJ, Wasson J, Mirkarimi PB, Gullikson E
2950 - 2954	Proposal for a 50 nm proximity x-ray lithography system and extension to 35 nm by resist material selection Kitayama T, Itoga K, Watanabe Y, Uzawa S
2955 - 2960	Technology and performance of the Canon XRA-1000 production x-ray stepper Mizusawa N, Uda K, Tanaka Y, Ohta H, Watanabe Y
2961 - 2965	Overlay evaluation of proximity x-ray lithography in 100 nm device fabrication Aoyama H, Taguchi T, Matsui Y, Fukuda M, Deguchi K, Morita H, Oda M, Matsuda T, Kumasaka F, Iba Y, Horiuchi K
2966 - 2969	Membrane-mask distortion correction: Analytical and experimental results Murooka K, Lim MH, Smith HI
2970 - 2975	Nanofabrication and diffractive optics for high-resolution x-ray applications Anderson EH, Olynick DL, Harteneck B, Veklerov E, Denbeaux G, Chao WL, Lucero A, Johnson L, Attwood D
2976 - 2980	Generation of arbitrary three dimensional surfaces by x-ray lithography Feldman M, Lee GS, Noel D, Malek CK, Bass R
2981 - 2985	Zone-plate-array lithography using synchrotron radiation Pepin A, Decanini D, Chen Y
2986 - 2989	Performance of a compact beamline with high brightness for x-ray lithography Hirose S, Miyatake T, Li X, Toyota E, Hirose M, Fujii K, Suzuki K
2990 - 2994	Highly accurate x-ray masks with 100-nm-class high-density device patterns Uchiyama S, Shimada M, Tsuchizawa T, Ohkubo T, Oda M, Yoshihara H
2995 - 2998	Overlay compatibility between two synchroton radiation steppers Fukuda M, Suzuki M, Haga T, Morita H, Aoyama H, Mitsui S, Taguchi T, Matsui Y
2999 - 3003	Scaled measurements of global space-charge induced image blur in electron beam projection system Han LQ, Pease RF, Meisburger WD, Winograd GI, Takahashi K
3004 - 3009	Structure of stochastic Coulomb interactions in electron beam columns Wu B, Neureuther AR
3010 - 3016	Multisource optimization of a column for electron lithography Mankos M, Coyle S, Fernandez A, Sagle A, Allen P, Owens W, Sullivan J, Chang THP
3017 - 3022	Electron optical image correction subsystem in electron beam projection lithography Kojima S, Stickel W, Rockrohr JD, Gordon M
3023 - 3028	Analytic evaluation of the intensity point spread function Gallatin GM
3029 - 3033	Application of the generalized curvilinear variable axis lens to electron projection Stickel W, Langner GO
3034 - 3041	Computer aided design and analysis of imaging energy filters with inhomogeneous bending magnets Munro E, Rouse J
3042 - 3046	Prospect for high brightness III-nitride electron emitter Machuca F, Sun Y, Liu Z, Ioakeimidi K, Pianetta P, Pease RFW
3047 - 3051	Depth of field at high magnifications of scanning electron microscopes Sato M, Mizuno F
3052 - 3056	Demonstration of multiblanker electron-beam technology Winograd G, Krishnamurthi V, Garcia R, Veneklasen LH, Mankos M, Pease F
3057 - 3060	Optimization of microcolumn electron optics for high-current applications Mankos M, Lee KY, Muray L, Spallas J, Hsu Y, Stebler C, DeVore W, Bullock E, Chang THP
3061 - 3066	New concept for high-throughput multielectron beam direct write system Muraki M, Gotoh S
3067 - 3071	Correction of the field curvature in SCALPEL projection systems Xiu K, Gibson JM
3072 - 3078	PREVAIL Alpha system: Status and design considerations Golladay SD, Pfeiffer HC, Rockrohr JD, Stickel W
3079 - 3083	PREVAIL: Dynamic correction of aberrations Gordon MS, Enichen WA, Golladay SD, Pfeiffer HC, Robinson CF, Stickel W
3084 - 3088	Patterning performance of EB-X3 x-ray mask writer Ohki S, Watanabe T, Takeda Y, Morosawa T, Saito K, Kunioka T, Kato J, Shimizu A, Matsuda T, Tsuboi S, Aoyama H, Watanabe H, Nakayama Y
3089 - 3094	Evaluation of a 100 kV thermal field emission electron-beam nanolithography system Tennant DM, Fullowan R, Takemura H, Isobe M, Nakagawa Y
3095 - 3098	Calculation of surface potential and beam deflection due to charging effects in electron beam lithography Lee Y, Lee W, Chun K
3099 - 3104	Advances in arrayed microcolumn lithography Muray LP, Spallas JP, Stebler C, Lee K, Mankos M, Hsu Y, Gmur M, Chang THP
3105 - 3110	Quantitative factor analysis of resolution limit in electron beam lithography using the edge roughness evaluation method Yoshizawa M, Moriya S
3111 - 3114	Grid lens approach for high effective emittance in SCALPEL (R) Moonen D, van Kranen S, Kruit P, Katsap V, Waskiewicz WK
3115 - 3121	Analytical-based solutions for SCALPEL wafer heating Fares N, Stanton S, Liddle J, Gallatin G
3122 - 3125	Charge induced pattern distortion in low energy electron beam lithography Satyalakshmi KM, Olkhovets A, Metzler MG, Harnett CK, Tanenbaum DM, Craighead HG
3126 - 3131	Electron optical column for a multicolumn, multibeam direct-write electron beam lithography system Yin E, Brodie AD, Tsai FC, Guo GX, Parker NW
3132 - 3137	Demagnifying immersion magnetic lenses used for projection electron beam lithography without crossovers Cheng M, Tang TT
3138 - 3142	Implementation of real-time proximity effect correction in a raster shaped beam tool Boegli V, Johnson L, Kao H, Veneklasen L, Hofmann U, Finkelstein I, Stovall S, Rishton S
3143 - 3149	Sub-0.1 mu electron-beam lithography for nanostructure development Peckerar M, Bass R, Rhee KW
3150 - 3157	Proximity effect correction using pattern shape modification and area density map Takahashi K, Osawa M, Sato M, Arimoto H, Ogino K, Hoshino H, Machida Y
3158 - 3161	Carrier distribution profiles in Si-doped layers in GaAs formed by focused ion beam implantation and successive overlayer growth Hada T, Goto T, Yanagisawa J, Wakaya F, Yuba Y, Gamo K
3162 - 3167	Focused ion beam patterning of III-V crystals at low temperature: A method for improving the ion-induced defect localization Schneider M, Gierak J, Marzin JY, Gayral B, Gerard JM
3168 - 3171	Focused electron beam induced deposition of gold Utke I, Hoffmann P, Dwir B, Leifer K, Kapon E, Doppelt P
3172 - 3176	Pattern generators and microcolumns far ion beam lithography Scott KL, King TJ, Lieberman MA, Leung KN
3177 - 3180	Determination of resist exposure parameters in helium ion beam lithography: Absorbed energy gradient, contrast, and critical dose Ruchhoeft P, Wolfe JC
3181 - 3184	Three-dimensional nanostructure fabrication by focused-ion-beam chemical vapor deposition Matsui S, Kaito T, Fujita J, Komuro M, Kanda K, Haruyama Y
3185 - 3189	Optimal strategy for controlling linewidth on spherical focal surface arrays Ruchhoeft P, Wolfe JC
3190 - 3193	Modeling of focused ion beam induced surface chemistry Edinger K, Kraus T
3194 - 3197	Performance of multicusp plasma ion source for focused ion beam applications Scipioni L, Stewart D, Ferranti D, Saxonis A
3198 - 3201	Maskless deposition of gold patterns on silicon Erickson LE, Schmuki P, Champion G
3202 - 3206	Fabrication of open stencil masks with asymmetric void ratio for the ion projection lithography space charge experiment Volland B, Shi F, Heerlein H, Rangelow IW, Hudek P, Kostic I, Cekan E, Vonach H, Loeschner H, Horner C, Stengl G, Buschbeck H, Zeininger M, Bleeker A, Benschop J
3207 - 3209	Experimental evaluation of an optimized radiation cooling geometry for ion projection lithography masks Torres JL, Nounu HN, Wasson JR, Wolfe JC, Lutz J, Haugeneder E, Loschner H, Stengl G, Kaesmaier R
3210 - 3215	Fabrication of masks for electron-beam projection lithography Lercel M, Magg C, Barrett M, Collins K, Trybendis M, Caldwell N, Jeffer R, Bouchard L
3216 - 3220	Progress in extreme ultraviolet mask repair using a focused ion beam Liang T, Stivers A, Livengood R, Yan PY, Zhang GJ, Lo FC
3221 - 3226	Mechanical analysis of the PLASMAX particle removal process for optical and next-generation lithography masks Semke WH, Weisbrod EJ, Engelstad RL, Lovell EG, Festa JJ, Bailey JB
3227 - 3231	Characterization of phase defects in phase shift masks Adam K, Hotta S, Neureuther AR
3232 - 3236	TaSiN thin-film pattern transfer optimization for 200 mm SCALPEL and extreme ultraviolet lithography masks Dauksher WJ, Resnick DJ, Clemens SB, Standfast DL, Masnyj ZS, Wasson JR, Bergmann NM, Han SI, Mangat PJS
3237 - 3241	High-performance membrane mask for electron projection lithography Yamashita H, Amemiya S, Nomura E, Nakajima K, Nozue H
3242 - 3247	Inter and intramembrane resist critical dimension uniformity across a SCALPEL mask Nordquist K, Ainley E, Resnick DJ, Weisbrod E, Martin C, Engelstad R, Masnyj Z, Mangat P
3248 - 3253	Simulating the mechanical response of electron-beam projection lithography masks Jachim AF, Chen CF, Engelstad RL, Lovell EG, Mangat PJS, Dauksher WJ
3254 - 3258	Stencil reticle repair for electron beam projection lithography Okada M, Shimizu S, Kawata S, Kaito T
3259 - 3263	Thickness analysis of silicon membranes for stencil masks Sossna E, Kassing R, Rangelow IW, Herzinger CM, Tiwald TE, Woollam JA, Wagner T
3264 - 3267	Scanning probe metrology in the presence of surface charge Griffith JE, Kneedler EM, Ningen S, Berghaus A, Bryson CE, Pau S, Houge E, Shofner T
3268 - 3271	Two-dimensional spatial-phase-locked electron-beam lithography via sparse sampling Hastings JT, Zhang F, Finlayson MA, Goodberlet JG, Smith HI
3272 - 3276	Microcomb design and fabrication for high accuracy optical assembly Chen CG, Heilmann RK, Konkola PT, Mongrard O, Monnelly GP, Schattenburg ML
3277 - 3281	Relativistic corrections in displacement measuring interferometry Heilmann RK, Konkola PT, Chen CG, Schattenburg ML
3282 - 3286	Beam steering system and spatial filtering applied to interference lithography Konkola PT, Chen CG, Heilmann RK, Schattenburg ML
3287 - 3291	Characterization of field stitching in electron-beam lithography using moire metrology Murphy TE, Mondol MK, Smith HI
3292 - 3296	Surface and line-edge roughness in solution and plasma developed negative tone resists: Experiment and simulation Patsis GP, Tserepi A, Raptis I, Glezos N, Gogolides E, Valamontes ES
3297 - 3302	Energy transfer between electrons and photoresist: Its relation to resolution Han G, Cerrina F
3303 - 3307	Comparison of resist collapse properties for deep ultraviolet and 193 nm resist platforms Cao HB, Nealey PF, Domke WD
3308 - 3312	Supercritical drying for water-rinsed resist systems Namatsu H
3313 - 3317	Aqueous-based photoresist drying using supercritical carbon dioxide to prevent pattern collapse Goldfarb DL, de Pablo JJ, Nealey PF, Simons JP, Moreau WM, Angelopoulos M
3318 - 3322	Enhancement of resist resolution and sensitivity via applied electric field Cheng MS, Croffie E, Yuan L, Neureuther A
3323 - 3327	Optimized bilayer hexamethyldisiloxane film as bottom antireflective coating for both KrF and ArF lithographies Lin CH, Wang LA, Chen HL
3328 - 3331	Vacuum ultraviolet spectra of fluorocompounds for 157 nm lithography Toriumi M, Satou I, Itani T
3332 - 3339	Polymer photochemistry at advanced optical wavelengths Fedynyshyn TH, Kunz RR, Sinta RF, Goodman RB, Doran SP
3340 - 3344	Modeling influence of structural changes in photoacid generators an 193 nm single layer resist imaging Croffie E, Yuan L, Cheng MS, Neureuther A, Houlihan F, Cirelli R, Watson P, Nalamasu O, Gabor A
3345 - 3348	Lithographic performance of thin dendritic polymer resists Williamson M, Neureuther A
3349 - 3353	Resist profile characteristics caused by photoelectron and Auger electron blur at the resist-tungsten substrate interface in 100 nm proximity x-ray lithography Seo Y, Lee C, Seo Y, Kim O, Noh H, Kim H
3354 - 3359	Evaluation of alternative development process for high-aspect-ratio poly(methylmethacrylate) microstructures in deep x-ray lithography Malek CK, Yajamanyam S
3360 - 3363	Lithography using ultrathin resist films Pike C, Bell S, Lyons C, Plat M, Levinson H, Okoroanyanwu U
3364 - 3370	Outgassing of photoresist materials at extreme ultraviolet wavelengths Dentinger PM
3371 - 3375	Correlation between the chemical compositions and optical properties of AlSixNy embedded layer for attenuated phase-shifting mask in 193 nm and the modification of the R-T method for measuring n and k Lin CM, Loong WA
3376 - 3380	Scaling of T-g and reaction rate with film thickness in photoresist: A thermal probe study Fryer DS, Nealey PF, de Pablo JJ
3381 - 3387	Thin film instabilities and implications for ultrathin resist processes Okoroanyanwu U
3388 - 3395	Resolution limit of negative tone chemically amplified resist used for hybrid lithography: Influence of the molecular weight Pain L, Higgins C, Scarfogliere B, Tedesco S, Dal'Zotto B, Gourgon C, Ribeiro M, Kusumoto T, Suetsugu M, Hanawa R
3396 - 3401	157 nm resist materials: Progress report Brodsky C, Byers J, Conley W, Hung R, Yamada S, Patterson K, Somervell M, Trinque B, Tran HV, Cho S, Chiba T, Lin SH, Jamieson A, Johnson H, Vander Heyden T, Willson CG
3402 - 3407	Outgassing of photoresists in extreme ultraviolet lithography Chauhan MM, Nealey PF
3408 - 3413	1 kV resist technology for microcolumn-based electron-beam lithography Lee KY, Hsu Y, Le P, Tan ZCH, Chang THP, Elian K
3414 - 3418	Nanoscale patterning of self-assembled monolayers with electrons Golzhauser A, Geyer W, Stadler V, Eck W, Grunze M, Edinger K, Weimann T, Hinze P
3419 - 3423	Hydrogen silsesquioxane/novolak bilayer resist for high aspect ratio nanoscale electron-beam lithography van Delft FCMJM, Weterings JP, van Langen-Suurling AK, Romijn H
3424 - 3427	High-purity, ultrahigh-resolution calixarene electron-beam negative resist Manako S, Ochiai Y, Yamamoto H, Teshima T, Fujita J, Nomura E
3428 - 3430	Calixarene G-line double resist process with 15 nm resolution aid large area exposure capability Kedzierski J, Anderson E, Bokor J
3431 - 3434	Aqueous base development and acid diffusion length optimization in negative epoxy resist for electron beam lithography Glezos N, Argitis P, Velessiotis D, Raptis I, Hatzakis M, Hudek P, Kostic I
3435 - 3440	Roughness study of a positive tone high performance SCALPEL resist Ocola LE, Orphanos PA, Li WY, Waskiewicz W, Novembre AE, Sato M
3441 - 3444	Influence of developer and development conditions on the behavior of high molecular weight electron beam resists Hasko DG, Yasin S, Mumtaz A
3445 - 3449	Evolutionary optimization of the electron-beam lithography process for gate fabrication of high electron mobility transistors Robin F, Orzati A, Homan OJ, Bachtold W
3450 - 3452	Mechanical properties and pattern collapse of chemically amplified photoresists Que L, Gianchandani YB
3453 - 3461	Kinetics and crystal orientation dependence in high aspect ratio silicon dry etching Blauw MA, Zijlstra T, Bakker RA, van der Drift E
3462 - 3466	High speed anisotropic dry etching of CoNbZr for next generation magnetic recording Andriesse MS, Zijlstra T, van der Drift E
3467 - 3470	Effects of reactive ion etching on the electrical characteristics of GaN Rong B, Cheung R, Gao W, Alkaisi MM, Reeves RJ
3471 - 3475	High resolution inductively coupled plasma etching of 30 nm lines and spaces in tungsten and silicon Goodyear AL, Mackenzie S, Olynick DL, Anderson EH
3476 - 3480	Micromask-induced surface defects inside Si trench isolation Rho K
3481 - 3487	Quantum interference in a vacuum nanotriode Driskill-Smith AAG, Hasko DG, Ahmed H
3488 - 3492	Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths Lu W, Koester SJ, Wang XW, Chu JO, Ma TP, Adesida I
3493 - 3496	Fabrication technique for nanometer-scale InAs quantum devices: Observation of quantum interference in Aharonov-Bohm rings and Coulomb blockade in quantum dots Chang TH, Chen KA, Yang CH, Yang MJ, Park D
3497 - 3500	Nanofabrication using structure controlled hydrogenated Si clusters deposited on Si surfaces Kanayama T, Watanabe MO, Bolotov L, Uchida N
3501 - 3504	Nanofabrication techniques for lasers with two-dimensional photonic crystal mirrors Moosburger J, Happ T, Kamp M, Forchel A
3505 - 3509	Fabrication of three-dimensional photonic structures with submicrometer resolution by x-ray lithography Cuisin C, Chelnokov A, Lourtioz JM, Decanini D, Chen Y
3510 - 3513	Drilled alternating-layer structure for three-dimensional photonic crystals with a full band gap Kuramochi E, Notomi M, Tamamura T, Kawashima T, Kawakami S, Takahashi J, Takahashi C
3514 - 3520	Nanoheteroepitaxy: Nanofabrication route to improved epitaxial growth Zubia D, Zaidi SH, Hersee SD, Brueck SRJ
3521 - 3524	Fabrication of 30 nm T gates using SiNx as a supporting and definition layer Chen Y, Edgar D, Li X, Macintyre D, Thoms S
3525 - 3529	Progress on nanostructuring with Nanojet Voigt J, Shi F, Hudek P, Rangelow IW, Edinger K
3530 - 3534	Combining advanced lithographic techniques and self-assembly of thin films of diblock copolymers to produce templates for nanofabrication Peters RD, Yang XM, Wang Q, de Pablo JJ, Nealey PF
3535 - 3538	Oxide nanodots and ultrathin layers fabricated on silicon using nonfocused multicharged ion beams Borsoni G, Gros-Jean M, Korwin-Pawlowski ML, Laffitte R, Le Roux V, Vallier L
3539 - 3543	Optimization of a lithographic and ion beam etching process for nanostructuring magnetoresistive thin film stacks Walsh ME, Hao YW, Ross CA, Smith HI
3544 - 3548	Field emission cathode array with self-aligned gate electrode fabricated by silicon micromachining Barth W, Debski T, Shi F, Hudek P, Kostic I, Rangelow IW, Biehl S, Iwert T, Grabiec P, Studzinska K, Mitura S, Bekh II, Lushkin AE, Il'chenko LG, Il'chenko VV, Haindl G
3549 - 3551	Actuation and internal friction of torsional nanomechanical silicon resonators Olkhovets A, Evoy S, Carr DW, Parpia JM, Craighead HG
3552 - 3556	Novel alignment system for imprint lithography White DL, Wood OR
3557 - 3560	Nanoimprint lithography at the 6 in. wafer scale Heidari B, Maximov I, Montelius L
3561 - 3563	Fabrication of quantum point contacts by imprint lithography and transport studies Martini I, Kuhn S, Kamp M, Worschech L, Forchel A, Eisert D, Koeth J, Sijbesma R
3564 - 3568	Quantitative analysis of the molding of nanostructures Schift H, David C, Gobrecht J, D'Amore A, Simoneta D, Kaiser W, Gabriel M
3569 - 3571	Electron-beam fabrication of nonplanar templates for contact printing Rhee KW, Shirey LM, Isaacson PI, Komegay CF, Dressick WJ, Chen MS, Brandow SL
3572 - 3577	Step and flash imprint lithography: Template surface treatment and defect analysis Bailey T, Choi BJ, Colburn M, Meissl M, Shaya S, Ekerdt JG, Sreenivasan SV, Willson CG
3578 - 3581	Comparison of infrared frequency selective surfaces fabricated by direct-write electron-beam and bilayer nanoimprint lithographies Puscasu I, Boreman G, Tiberio RC, Spencer D, Krchnavek RR
3582 - 3585	Master replication into thermosetting polymers for nanoimprinting Schulz H, Lyebyedyev D, Scheer HC, Pfeiffer K, Bleidiessel G, Grutzner G, Ahopelto J
3586 - 3589	Directed assembly of carbon nanotube electronic circuits by selective area chemical vapor deposition on prepatterned catalyst electrode structures Wei YY, Fan X, Eres G
3590 - 3593	Real time pattern changing in atomic beam holography using phase shift by Stark effect Fujita J, Mitake S, Shimizu F
3594 - 3599	Lithographically defined nano and micro sensors using "float coating" of resist and electron beam lithography Zhou H, Chong BK, Stopford P, Mills G, Midha A, Donaldson L, Weaver JMR
3600 - 3603	Microcalorimetry applications of a surface micromachined bolometer-type thermal probe Li MH, Gianchandani YB
3604 - 3607	Novel multibridge-structured piezoelectric microdevice for scanning force microscopy Chu J, Wang Z, Maeda R, Kataoka K, Itoh T, Suga T
3608 - 3611	Fabrication of diffractive optical elements for an integrated compact optical microelectromechanical system laser scanner Wendt JR, Krygowski TW, Vawter GA, Blum O, Sweatt WC, Warren ME, Reyes D