Thin Solid Films

Thin Solid Films, Vol.313-314 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (152 articles)

1 - 9	Spectroscopic ellipsometry: a historical overview Vedam K
10 - 17	Ellipsometric investigations of piezo-optical effects Cardona M, Ronnow D, Santos PV
18 - 32	Advances in multichannel spectroscopic ellipsometry Collins RW, An I, Fujiwara H, Lee JC, Lu YW, Koh JY, Rovira PI
33 - 39	Spectroscopic ellipsometry data analysis : measured versus calculated quantities Jellison GE
40 - 46	Evaluation of interferometric ellipsometer systems with a time resolution of one microsecond and faster Hemmes K, Hamstra MA, Koops KR, Wind MM, Schram T, de Laet J, Bender H
47 - 52	Complete Mueller matrix measurement with a single high frequency modulation Compain E, Drevillon B, Huc J, Parey JY, Bouree JE
53 - 57	Spectrophotopolarimeter based on multiple reflections in a coated dielectric slab Azzam RMA, El-Saba AM, Abushagur MAG
58 - 61	Broadband spectral operation of a rotating-compensator ellipsometer Opsal J, Fanton J, Chen J, Leng J, Wei L, Uhrich C, Senko M, Zaiser C, Aspnes DE
62 - 67	Development of a phase-sensitive ellipsometer and application to the real-time analysis of chromogenic WO3 films during the coloration process Masetti E, Segre SE, Bosch S
68 - 72	Spectroscopic ellipsometry with compensator and X-ray specular reflectivity for characterization of thin optical layers on transparent substrates Bertin F, Chabli A, Chiariglione E, Burdin M, Berger M, Boudet T, Lartigue O, Ravel G
73 - 78	Systematic errors in fixed polarizer, rotating polarizer, sample, fixed analyzer spectroscopic ellipsometry Bertucci S, Pawlowski A, Nicolas N, Johann L, El Ghemmaz A, Stein N, Kleim R
79 - 84	Simultaneous determination of reflectance spectra along with {psi(E), Delta(E)} in multichannel ellipsometry : applications to instrument calibration and reduction of real-time data An I, Lee JC, Hong BY, Collins RW
85 - 89	Spectrogoniometry and the WANTED method for thickness and refractive index determination Martinez-Anton JC, Bernabeu E
90 - 96	Effects of depolarization of polarimetric components on null ellipsometry Nee SMF, Cole T
97 - 101	Depolarization mixed polarization corrections of ellipsometry spectra Rossow U
XI - XII	Spectroscopic ellipsometry : Proceedings of the 2nd International Conference on Spectroscopic Ellipsometry - Charleston, South Carolina, USA 12-15 May 1997 - Preface Collins RW, Aspnes DE, Irene EA
102 - 107	Application of the degree of polarization to film thickness gradients Richter U
108 - 113	Measurement of the absorption edge of thick transparent substrates using the incoherent reflection model and spectroscopic UV visible near IR ellipsometry Kildemo M, Ossikovski R, Stchakovsky M
114 - 118	Multiple sample analysis of spectroscopic ellipsometry data of semi-transparent films Jarrendahl K, Arwin H
119 - 123	Toward a priori selection of ellipsometry angles and wavelengths using a high performance semantic database Urban FK, Barton D
124 - 127	Multiple minima in the ellipsometric error function Alterovitz SA, Johs B
128 - 131	Analysis of general ambiguity of inverse ellipsometric problem Polovinkin VG, Svitasheva SN
132 - 136	Analytic representations of the dielectric functions of materials for device and structural modeling Leng J, Opsal J, Chu H, Senko M, Aspnes DE
137 - 142	Development of a parametric optical constant model for Hg1-xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth Johs B, Herzinger CM, Dinan JH, Cornfeld A, Benson JD
143 - 148	Analysis of optical spectra by Fourier methods Yoo SD, Edwards NV, Aspnes DE
149 - 155	A modified learning strategy for neural networks to support spectroscopic ellipsometric data evaluation Redei L, Fried M, Barsony I, Wallinga H
156 - 160	A new algorithm for real-time thin film thickness estimation given in situ multiwavelength ellipsometry using an extended Kalman filter Galarza CG, Khargonekar PP, Layadi N, Vincent TL, Rietman EA, Lee JTC
161 - 166	Systematic differences among nominal reference dielectric function spectra for crystalline Si as determined by spectroscopic ellipsometry Bell KA, Mantese L, Rossow U, Aspnes DE
167 - 171	Characterization of highly strained silicon-germanium alloys grown on silicon substrates using spectroscopic ellipsometry Lee H
172 - 176	Optical properties and band structure of Ge1-yCy and Ge-rich Si1-x-yGexCy alloys Junge KE, Voss NR, Lange R, Dolan JM, Zollner S, Dashiell M, Hits DA, Orner BA, Jonczyk R, Kolodzey J
177 - 182	Dielectric function modeling for In1-yAlyAs on InP Kamlet LI, Terry FL
183 - 186	Analysis of ellipsometric and photoemission spectra of diluted magnetic semiconductors by hybridization interaction mechanism Kim YD, Chang YC, Klein MV
187 - 192	Spectroscopic ellipsometry and low-temperature reflectance : complementary analysis of GaN thin films Edwards NV, Yoo SD, Bremser MD, Horton MN, Perkins NR, Weeks TW, Liu H, Stall RA, Kuech TF, Davis RF, Aspnes DE
193 - 197	Spectroscopic ellipsometry characterization of thin-film silicon nitride Jellison GE, Modine FA, Doshi P, Rohatgi A
198 - 204	Characterization of the optical properties of PECVD SiNx, films using ellipsometry and reflectometry Asinovsky L, Shen F, Yamaguchi T
205 - 209	Visible and infrared optical constants of electrochromic materials for emissivity modulation applications Hale JS, DeVries M, Dworak B, Woollam JA
210 - 213	Optical properties of lead lanthanum zirconate titanate amorphous thin films Zhu DR, Li QJ, Lai TS, Mo D, Xu YH, Mackenzie JD
214 - 217	Spectroscopic ellipsometry characterization of Ba0.7Sr0.3TiO3 thin films prepared by the sol-gel method Suzuki I, Ejima M, Watanabe K, Xiong YM, Saitoh T
218 - 221	Optical characterization of Ru2Si3 by spectroscopic ellipsometry, UV-VIS-NIR spectroscopy and band structure calculations Henrion W, Rebien M, Antonov VN, Jepsen O, Lange H
222 - 227	Theoretical and experimental determination of optical and magneto-optical properties of LuFe2 single crystal Lee SJ, Lange RJ, Hong S, Zollner S, Canfield PC, Panchula AF, Harmon BN, Lynch DW
228 - 231	Ellipsometric study of the influence of the order-disorder phase transition on the optical properties and electronic structures of FeAl alloy films Lee YP, Kim KW, Antonov VN, Krasovska OV, Krasovskii EE, Kudryavtsev YV, Nemoshkalenko VV, Yavorsky BY
232 - 236	The medium-related optical constants of noble metals observed by ellipsometric study Wang Y, Chen LY, Xu B, Zheng WM, Zhang RJ, Qian DL, Zhou SM, Zheng YX, Dai N, Yang YM, Ding KB, Zhang XM
237 - 242	Characterization of epitaxial silicon germanium thin films by spectroscopic ellipsometry Ygartua C, Liaw M
243 - 247	Influence of roughness and grain dimension on the optical functions of polycrystalline silicon films Borghesi A, Tallarida G, Amore G, Cazzaniga F, Queirolo G, Alessandri M, Sassella A
248 - 253	Characterization and metrology of the diffusion doped polysilicon using ellipsometry Asinovsky L, Schroth M, Shen F, Sweeney JJ
254 - 258	Surface disorder production during plasma immersion implantation Lohner T, Khanh NQ, Petrik P, Biro LP, Fried M, Pinter I, Lehnert W, Frey L, Ryssel H, Wentink DJ, Gyulai J
259 - 263	Comparative study of polysilicon-on-oxide using spectroscopic ellipsometry, atomic force microscopy, and transmission electron microscopy Petrik P, Fried M, Lohner T, Berger R, Biro LP, Schneider C, Gyulai J, Ryssel H
264 - 269	Spectroellipsometric characterization of SIMOX with nanometre-thick top Si layers Yamaguchi T, Nasu M, Jiang ZT, Tabe M, Kanda Y
270 - 275	Simultaneous measurement of six layers in a silicon on insulator film stack using visible near IR spectrophotometry and single-wavelength beam profile reflectometry Leng JM, Sidorowich JJ, Senko M, Opsal J
276 - 280	Optical properties of bonded silicon silicide on insulator ((SOI)-O-2) : a new substrate for electronic and optical devices Nayar V, Russell J, Carline RT, Pidduck AJ, Quinn C, Nevin A, Blackstone S
281 - 285	A multi-sample, multi-wavelength, multi-angle investigation of the interface layer between silicon and thermally grown silicon dioxide Herzinger CM, Johs B, McGahan WA, Paulson W
286 - 291	Spectroscopic immersion ellipsometry study of SiO2-Si interface roughness for electron cyclotron resonance plasma and thermally oxidized Si surfaces Zhao C, Lefebvre PR, Irene EA
292 - 297	Optical characterization of silicon dioxide layers grown on silicon under different growth conditions Cho YJ, Cho HM, Lee YW, Lee HY, Lee IW, Lee SK, Sun JW, Moon SY, Chung HK, Pang HY, Kim SJ, Kim SY
298 - 302	Spectroellipsometric characterization of thin silicon nitride films Jiang ZT, Yamaguchi T, Aoyama M, Nakanishi Y, Asinovsky L
303 - 307	Characterization of PVD TiN uniformity Asinovsky L, Frisa LE
308 - 313	Characterization of titanium nitride (TiN) films on various substrates using spectrophotometry, beam profile reflectometry, beam profile ellipsometry and spectroscopic beam profile ellipsometry Leng JM, Chen J, Fanton J, Senko M, Ritz K, Opsal J
314 - 318	An ellipsometric study of Ni, Mo and NixN films deposited on Si Tarasenko AA, Jastrabik L, Chvostova D, Sobota J
319 - 322	Spectral dependence of the complex refractive index shift across the semiconductor-metal transition in thermally-oxidized vanadium Svitasheva SN, Kruchinin VN
323 - 332	Generalized ellipsometry and complex optical systems Schubert M
333 - 340	Characterization of inhomogeneous dielectric films by spectroscopic ellipsometry Rivory J
341 - 346	Determination of optical anisotropy in calcite from ultraviolet to mid-infrared by generalized ellipsometry Thompson DW, DeVries MJ, Tiwald TE, Woollam JA
347 - 350	Spectroscopic ellipsometry measurements on an anisotropic organic crystal : potassium acid phthalate Sassella A, Tubino R, Borghesi A, Giardini ME, Quadrelli L
351 - 355	Anisotropic dielectric response and surface aging of mercuric iodide crystal studied by variable angle spectroscopic ellipsometry Yao H, Erickson JC, Lim LA, James RB
356 - 361	Spectroscopic ellipsometry studies of the optical properties of doped poly(3,4-ethylenedioxythiophene) : An anisotropic metal Pettersson LAA, Carlsson F, Inganas O, Arwin H
362 - 367	A spectroscopic anisotropy ellipsometry study of YBa2Cu3O7-x superconductors Michaelis A, Irene EA, Auciello O, Krauss AR, Veal B
368 - 372	In situ measurement of principal refractive indices of thin films by two-angle ellipsometry Hodgkinson I, Hazel J, Wu QH
373 - 378	Rotating-compensator multichannel transmission ellipsometry of a thin-film helicoidal bianisotropic medium Rovira PI, Yarussi RA, Collins RW, Venugopal VC, Lakhtakia A, Messier R, Robbie K, Brett MJ
379 - 383	Spectroscopic ellipsometric characterization of transparent thin film amorphous electronic materials : integrated analysis Popov KV, Tikhonravov AV, Campmany J, Bertran E, Bosch S, Canillas A
384 - 388	Characterization of graded refractive index silicon oxynitride thin films by spectroscopic ellipsometry Callard S, Gagnaire A, Joseph J
389 - 393	Composition profiling of graded dielectric function materials by spectroscopic ellipsometry Trolier-McKinstry S, Koh J
394 - 397	Spectroscopic ellipsometry characterization of indium tin oxide film microstructure and optical constants Synowicki RA
398 - 405	Plasma etching of submicron devices : in situ monitoring and control by multi-wavelength ellipsometry Maynard HL, Layadi N, Lee JTC
406 - 415	Complementary in-situ and post-deposition diagnostics of thin film semiconductor structures Pickering C
416 - 419	A square law for the analysis of real time ellipsometric nucleation and growth data Hu YZ, Zhao CY, Gao WX, Irene EA
420 - 423	Atomic scale characterization of the initial stage of hydrogenated silicon growth Nakamura T, Arai T, Shirai H
424 - 429	In situ ellipsometry for monitoring nucleation and growth of silicon on silicon dioxide Basa C, Hu YZ, Irene EA
430 - 434	Real-time monitoring of synchrotron-radiation-excited Si homoepitaxy on Si(100) by spectroscopic ellipsometry Akazawa H
435 - 441	High-speed, high-accuracy optical measurements of polycrystalline silicon for process control Benson TE, Ramamoorthy A, Kamlet LI, Terry FL
442 - 445	In situ spectroscopic ellipsometry for advanced process control in vertical furnaces Lehnert W, Berger R, Schneider C, Pfitzner L, Ryssel H, Stehle JL, Piel JP, Neumann W
446 - 453	Evaluation of automated spectroscopic ellipsometry for in-line process control - ESPRIT semiconductor equipment assessment (SEA) project 'IMPROVE' Pickering C, Russell J, Nayar V, Imschweiler J, Wille H, Harrington S, Wiggins C, Stehle JL, Piel JP, Bruchez J
454 - 458	An in situ and ex situ ellipsometry comparison of the interfaces of Si and GaAs resulting from thermal and plasma oxidation Lefebvre PR, Zhao C, Irene EA
459 - 463	In situ spectroscopic ellipsometric investigation of vacuum annealed and oxidized porous silicon layers Fried M, Wormeester H, Zoethout E, Lohner T, Polgar O, Barsony I
464 - 468	Real time spectroscopic ellipsometry for characterization of the crystallization of amorphous silicon by thermal annealing Wakagi M, Fujiwara H, Collins RW
469 - 473	Real time spectroscopic ellipsometry for characterization and optimization of amorphous silicon-based solar cell structures Koh J, Fujiwara H, Lu YW, Wronski CR
474 - 478	Depth-profiles in compositionally-graded amorphous silicon alloy thin films analyzed by real time spectroscopic ellipsometry Fujiwara H, Koh J, Collins RW
479 - 483	Adapted wavelength methods for in situ ellipsometry Callard S, Gagnaire A, Besland MP, Joseph J
484 - 489	A direct robust feedback method for growth control of optical coatings by multiwavelength ellipsometry Kildemo M, Drevillon B, Hunderi O
490 - 495	Real-time monitoring and control of epitaxial semiconductor growth in a production environment by in situ spectroscopic ellipsometry Johs B, Herzinger C, Dinan JH, Cornfeld A, Benson JD, Doctor D, Olson G, Ferguson I, Pelczynski M, Chow P, Kuo CH, Johnson S
496 - 500	Spectroscopic ellipsometry applied for in-situ control of lattice matched III-V growth in MOVPE Trepk T, Zorn M, Zettler JT, Klein M, Richter W
501 - 505	In situ ellipsometric monitoring of GaAs surface modifications during plasma processing : chemistry and kinetics Losurdo M, Capezzuto P, Bruno G
506 - 510	Application of real-time spectroscopic ellipsometry for the development of low-temperature diamond film growth processes Lee J, Hong BY, Messier R, Collins RW
511 - 515	In situ ellipsometric diagnostics of multilayer thin film deposition during sputtering Gao X, Glenn DW, Woollam JA
516 - 521	Observation of silver film growth using an in situ ultra-high vacuum spectroscopic ellipsometer Kawabata S, Ishihara K, Hoshi Y, Fukazawa T
522 - 526	Spectroscopic ellipsometry on gold clusters embedded in a Si(111) surface Mummler K, Wissmann P
527 - 532	Present status and capabilities for the theoretical calculation of surface optical properties Del Sole R
533 - 536	Epioptics : progress and opportunity McGilp JF
537 - 543	Response of the surface dielectric function to dynamic surface modifications : application of reflectance anisotropy spectroscopy and spectroscopic ellipsometry Zettler JT, Pristovsek M, Trepk T, Shkrebtii A, Steimetz E, Zorn M, Richter W
544 - 551	Interface, surface and bulk anisotropies of heterostructures Yasuda T
552 - 556	H-terminated silicon : spectroscopic ellipsometry measurements correlated to the surface electronic properties Angermann H, Henrion W, Rebien M, Fischer D, Zettler JT, Roseler A
557 - 560	Interpretation of critical point energy shifts in crystalline Si by near-surface localization of excited electronic states Mantese L, Bell KA, Rossow U, Aspnes DE
561 - 564	Ellipsometric study of tellurium molecular beam interaction with dehydrogenated vicinal silicon surfaces Shvets VA, Chikichev SI, Pridachin DN, Yakushev MV, Sidorov YG, Mardezhov AS
565 - 567	Adsorption of Ca on stepped Si(001) probed by resonant optical second harmonic generation Chandola S, Cavanagh M, Power JR, McGilp JF
568 - 573	Theory of femtosecond ellipsometry in Ge at 1.5 eV Zollner S, Myers KD, Dolan JM, Bailey DW, Stanton CJ
574 - 578	Linear and non-linear spectroscopy of GaAs and GaP : theory versus experiment Shkrebtii AI, Hughes JLP, Sipe JE, Pulci O
579 - 582	Real-time photo-spectroscopic ellipsometry measurement of electric field and composition in semiconductors Carline RT, Russell J, Hosea TJC, Thomas PJS, Pickering C
583 - 586	Dielectric changes of GaAs surfaces determined using the Kramers-Kronig analysis of surface photoabsorption spectra Uwai K, Watanabe Y, Kobayashi N
587 - 589	Verification of GaAs/AlAs superlattice theory by spectroscopic ellipsometry Mo D, Tan JH
590 - 593	Ellipsometry on monolayer films of InAs and AlAs embedded in GaAs and of InP embedded in GaP Schmidt H, Rheinlander B, Gottschalch V
594 - 598	Spectral-ellipsometric investigations on semiconductor resonators Jungk G
599 - 603	Ellipsometric studies on semiconductor microcavity IR-detector structures Rheinlander B, Kovac J, Hecht JD, Borgulova J, Uherek F, Waclawek J, Gottschalch V, Barna P
604 - 608	In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs/InP heterostructure by spectroscopic and kinetic ellipsometry Sudo S, Nakano Y, Sugiyama M, Shimogaki Y, Komiyama H, Tada K
609 - 613	Real-time growth monitoring of InGaAs/InP-HBT structures with reflectance anisotropy spectroscopy Arens M, Kurpas P, Ressel P, Weyers M
614 - 619	Real-time optical characterization of GaP heterostructures by p-polarized reflectance Dietz N, Ito K
620 - 624	Ellipsometric and reflectance-anisotropy measurements on rotating samples Haberland K, Hunderi O, Pristovsek M, Zettler JT, Richter W
625 - 630	Spectroscopic ellipsometry in the infrared range Drevillon B
631 - 641	High accuracy IR ellipsometer working with a Ge Brewster angle reflection polarizer and grid analyzer Luttmann M, Stehle JL, Defranoux C, Piel JP
642 - 648	Far infrared ellipsometry using synchrotron radiation : the out-of-plane response of La2-xSrxCuO4 Henn R, Bernhard C, Wittlin A, Cardona M, Uchida S
649 - 655	Far infrared ellipsometric measurements of (GaAs)(n)/(AlxGa1-xAs)(n) superlattice films by means of synchrotron radiation Wold E, Bremer J, Hunderi O, Fimland BO
656 - 660	Ellipsometric study of Fano resonance in heavily doped p-type Si and SiGe alloys Humlicek J
661 - 666	Application of IR variable angle spectroscopic ellipsometry to the determination of free carrier concentration depth profiles Tiwald TE, Thompson DW, Woollam JA, Paulson W, Hance R
667 - 670	Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb Snyder PG, Tiwald TE, Thompson DW, Ianno NJ, Woollam JA, Mauk MG, Shellenbarger ZA
671 - 675	Application of infrared Fourier transform phase-modulated ellipsometry to the characterization of silicon-based amorphous thin films Canillas A, Pascual E, Andujar JL, Campmany J, Bertran E
676 - 681	Visible and infrared ellipsometry study of ion assisted SiO2 films Souche D, Brunet-Bruneau A, Fisson S, Van VN, Vuye G, Abeles F, Rivory J
682 - 686	Infrared and UV-visible ellipsometric study of WO3 electrochromic thin films Pascual E, Marti J, Garcia E, Canillas A, Bertran E
687 - 691	Infrared ellipsometry of LiF Humlicek J
692 - 696	Optical investigations of mixed-phase boron nitride thin films by infrared spectroscopic ellipsometry Schubert M, Franke E, Neumann H, Tiwald TE, Thompson DW, Woollam JA, Hahn J
697 - 703	In situ characterization of cubic boron nitride film growth in the IR spectral region Barth KL, Fukarek W, Maucher HP, Plass MF, Lunk A
704 - 707	In situ infrared ellipsometry study of the growth of hydrogenated amorphous carbon thin films Heitz T, Drevillon B
708 - 712	Infrared ellipsometric analysis of organic film-on-substrate samples Roseler A, Korte EH
713 - 717	IR ellipsometry studies of polymers and oxygen plasma-treated polymers Bungay CL, Tiwald TE, Thompson DW, DeVries MJ, Woollam JA, Elman JF
718 - 721	Determination of the mid-IR optical constants of water and lubricants using IR ellipsometry combined with an ATR cell Tiwald TE, Thompson DW, Woollam JA, Pepper SV
722 - 726	Infrared spectroscopic ellipsometry for residual water detection in annealed sol-gel thin layers Bruynooghe S, Bertin F, Chabli A, Gay JC, Blanchard B, Couchaud M
727 - 731	Non-destructive optical characterisation of chromium conversion layers on aluminium Schram T, De Laet J, Terryn H
732 - 736	The optical constants of metallic island films as used for surface enhanced infrared absorption Roseler A, Korte EH
737 - 741	In situ infrared spectroscopic ellipsometry for blanket aluminum chemical vapor deposition on TiN and on SiO2/Si Weidner M, Weidner G, Hausmann P, Ritter G
742 - 744	Deep ultra-violet measurements of SiON anti-reflective coatings by spectroscopic ellipsometry Defranoux C, Piel JP, Stehle JL
745 - 750	Spectroscopic ellipsometry measurements of AlxGa1-xN in the energy range 3-25eV Wethkamp T, Wilmers K, Esser N, Richter W, Ambacher O, Angerer H, Jungk G, Johnson RL, Cardona M
751 - 755	Ellipsometry in the extreme ultraviolet region with multilayer polarizers Yamamoto M, Furudate M
756 - 763	An anisotropy microellipsometry (AME) study of anodic film formation on Ti and Zr single grains Michaelis A, Schweinsberg M
764 - 774	Spectroscopic ellipsometry and biology : recent developments and challenges Arwin H
775 - 780	Spectroscopic ellipsometry of electrochemical precipitation and oxidation of nickel hydroxide films Kong FP, Kostecki R, McLarnon F, Muller RH
781 - 784	A study of quantitative electrochemical analysis through a spectroellipsometric technique with a new function Huang ZQ, Zhang ST, Chen CG, Xie SF, Yang YR, Zhu W
785 - 789	Ellipsometric model for two-dimensional phase transition in Langmuir monolayers Tronin A, Shapovalov V
790 - 794	Anisotropy in Langmuir-Blodgett films studied by generalized spectroscopic ellipsometry Lecourt B, Blaudez D, Turlet JM
795 - 798	Spectroscopic ellipsometry of fullerene embedded Langmuir-Blodgett films with surface plasmon excitation Bortchagovsky E, Yurchenko I, Kazantseva Z, Humlicek J, Hora J
799 - 802	Application of time-resolved spectroellipsometry to the study of liquid crystal reorientation dynamics Fukazawa T, Tadokoro T, Toriumi H, Akahane T, Kimura M
803 - 807	Class transition temperature and thermal expansion behaviour of polymer films investigated by variable temperature spectroscopic ellipsometry Kahle O, Wielsch U, Metzner H, Bauer J, Uhlig C, Zawatzki C
808 - 813	Ellipsometric investigation of thick polymer films Forcht K, Gombert A, Joerger R, Kohl M
814 - 818	Characterization of biaxially-stretched plastic films by generalized ellipsometry Elman JF, Greener J, Herzinger CM, Johs B
819 - 824	Investigation of layered microdroplets using ellipsometric techniques Voue M, De Coninck J, Villette S, Valignat MP, Cazabat AM
825 - 830	Protein adsorption in thermally oxidized porous silicon layers Zangooie S, Bjorklund R, Arwin H
831 - 835	Ellipsometric penetration of turbid media : depolarization and surface characterization Silverman MP, Strange W