1 - 8 |
Wide gap chalcopyrites: material properties and solar cells Siebentritt S |
9 - 12 |
Ammonia-free method for preparation of CdS nanocrystalline films by chemical bath deposition technique Nemec P, Nemec I, Nahalkova P, Nemcova Y, Trojanek F, Maly P |
13 - 16 |
Hetero-epitaxial growth of Cu(In,Ga)S-2 on Si substrates Metzner H, Reislohner U, Cieslak J, Witthuhn W, Hahn T, Krausslich J |
17 - 25 |
Advances in solar cells made with hot wire chemical vapor deposition (HWCVD): superior films and devices at low equipment cost Schropp REI |
26 - 29 |
High quality a-Si : H films for MIS device applications Aguas H, Fortunato E, Silva V, Pereira L, Martins R |
30 - 33 |
Photoconductivity techniques for defect spectroscopy of photovoltaic materials Bruggemann R, Kleider JP |
34 - 38 |
Transfer of a thin silicon film on to a ceramic substrate Solanki CS, Bilyalov RR, Poortmans J, Nijs J |
39 - 46 |
Growth and optoelectronic properties of polymorphous silicon thin films Cabarrocas PRI, Morral AFI, Poissant Y |
47 - 51 |
Band tail states and free electrons in phosphorus doped microcrystalline silicon studied by ESR Lips K, Kanschat R, Brehme S, Fuhs W |
52 - 56 |
Photo-induced electron transfer from a dithieno thiophene-based polymer to TiO2 Luzzati S, Basso M, Catellani M, Brabec CJ, Gebeyehu D, Sariciftci NS |
57 - 61 |
Electrochemical interface modification of CuInS2 thin films Aggour M, Storkel U, Murrell C, Campbell SA, Jungblut H, Hoffmann P, Mikalo R, Schmeisser D, Lewerenz HJ |
62 - 65 |
Structural and optical characterization of RF reactively sputtered CuInS2 thin films He YB, Polity A, Alves HR, Osterreicher I, Kriegseis W, Pfisterer D, Meyer BK, Hardt M |
66 - 70 |
Dithienothiophene and dithienothiophene-S,S-dioxide copolymers for photovoltaics Catellani M, Boselli B, Luzzati S, Tripodi C |
71 - 75 |
Composition of CuInS2 thin films prepared by spray pyrolysis Krunks M, Kijatkina O, Rebane H, Oja I, Mikli V, Mere A |
76 - 80 |
Thin ZnS : Cu,Ga and ZnO : Cu,Ga film phosphors Kryshtab TG, Khomchenko VS, Papusha VP, Mazin MO, Tzyrkunov YA |
81 - 85 |
Onset of microcrystallinity in silicon thin films Das C, Ray S |
86 - 90 |
Pulsed dc magnetron-sputtering of microcrystalline silicon Reinig P, Alex V, Fenske F, Fuhs W, Selle B |
91 - 96 |
Nanocrystalline silicon thin films prepared by radiofrequency magnetron sputtering Goncalves C, Charvet S, Zeinert A, Clin M, Zellama K |
97 - 101 |
Metallo-supramolecular oligo(p-phenylene vinylene)/[60] fullerene architectures: towards functional materials El-ghayoury A, Schenning APHJ, van Hal PA, Weidl CH, van Dongen JLJ, Janssen RAJ, Schubert US, Meijer EW |
IX - IX |
Proceeding of Symposium P on Thin Film Materials for Photovoltaics, E-MRS Spring Conference, Strasbourg, France, June 5-8, 2001. Preface |
102 - 106 |
Chemical bath deposition of zinc sulfide based buffer layers using low toxicity materials Johnston DA, Carletto MH, Reddy KTR, Forbes I, Miles RW |
107 - 111 |
Comparative studies between Cu-Ga-Se and Cu-In-Se thin film systems Caballero R, Guillen C |
112 - 115 |
In flight treatment of metallurgical silicon powder by RF thermal plasma: elaboration of hydrogenated silicon deposit on a substrate Benmansour M, Francke E, Morvan D, Amouroux J, Ballutaud D |
116 - 119 |
Formation of polycrystalline SnS layers by a two-step process Reddy KTR, Reddy PP, Datta R, Miles RW |
120 - 125 |
Study of the conversion process of sulfinyl-OC1C10-PPV precursor polymers with different analytical techniques Kesters E, Lutsen L, Vanderzande D, Gelan J, Nguyen TP, Molinie P |
126 - 129 |
Properties of zinc sulfur selenide deposited using a close-spaced sublimation method Armstrong S, Datta PK, Miles RW |
130 - 134 |
Influence of molecule dwell time on mu c-Si : H properties Coscia U, Ambrosone G, Maddalena P, Lettieri S, Ambrico M, Minarini C |
135 - 138 |
Amorphous silicon deposited by hot-wire CVD for application in dual junction solar cells van Veen MK, Schropp REI |
139 - 143 |
Temperature improvement of the optical and electrical properties of hydrogenated nanostructured silicon thin films Hadjadj A, Beorchia A, Cabarrocas PR, Boufendi L |
144 - 147 |
Controlled arsenic diffusion in epitaxial CdxHg1-xTe layers in the evaporation-condensation-diffusion process Vlasov A, Pysarevsky V, Storchun O, Shevchenko A, Bonchyk A, Pokhmurska H, Barcz A, Swiatek Z |
148 - 152 |
US and CdTe large area thin films processed by radio-frequency planar-magnetron sputtering Hernandez-Contreras H, Contreras-Puente G, Aguilar-Hernandez J, Morales-Acevedo A, Vidal-Larramendi J, Vigil-Galan O |
153 - 156 |
Influence of the substrate temperature on the structure and the optical properties of amorphous Si : H thin films prepared by reactive evaporation Rinnert H, Vergnat M |
157 - 161 |
Growth of organic semiconductors for hybrid solar cell application Ackermann J, Videlot C, El Kassmi A |
162 - 169 |
The future of crystalline silicon films on foreign substrates Bergmann RB, Werner JH |
170 - 174 |
Crystalline silicon thin films with porous Si backside reflector Bilyalov R, Solanki CS, Poortmans J, Richard O, Bender H, Kummer M, von Kanel H |
175 - 178 |
Microwave mobility in profiled poly-Si thin films deposited on glass by hot-wire CVD van Veenendaal PATT, Savenije TJ, Rath JK, Schropp REI |
179 - 187 |
Microcrystalline silicon and'micromorph' tandem solar cells Shah A, Meier J, Vallat-Sauvain E, Droz C, Kroll U, Wyrsch N, Guillet J, Graf U |
188 - 192 |
Spectral photoresponses and transport properties of polymorphous silicon thin films Kleider JP, Gauthier M, Longeaud C, Roy D, Saadane O, Bruggemann R |
193 - 196 |
Effect of small crystal size and surface temperature on the Raman spectra of amorphous and nanostructured Si thin films deposited by radiofrequency plasmas Huet S, Viera G, Boufendi L |
197 - 203 |
Production technology for CIGS thin film solar cells Negami T, Satoh T, Hashimoto Y, Shimakawa S, Hayashi S, Muro M, Inoue H, Kitagawa M |
204 - 211 |
Optimization of CBD CdS process in high-efficiency Cu(In,Ga)Se-2-based solar cells Contreras MA, Romero MJ, Hasoon BTE, Noufi R, Ward S, Ramanathan K |
212 - 215 |
Ga2O3 segregation in Cu(In, Ga)Se-2/ZnO superstrate solar cells and its impact on their photovoltaic properties Terheggen M, Heinrich H, Kostorz G, Haug FJ, Zogg H, Tiwari AN |
216 - 222 |
Sputtered Mo/Sb2Te3 and Ni/Sb2Te3 layers as back contacts for CdTe/CdS solar cells Abken AE, Bartelt OJ |
223 - 228 |
Accurate efficiency determination and stability studies of conjugated polymer/fullerene solar cells Kroon JM, Wienk MM, Verhees WJH, Hummelen JC |
229 - 237 |
Thin-film polysilicon solar cells on foreign substrates using direct thermal CVD: material and solar cell design Beaucarne G, Bourdais S, Slaoui A, Poortmans J |
238 - 241 |
Influence of interface treatments on the performance of silicon heterojunction solar cells Carabe J, Gandia JJ |
242 - 246 |
Electrical characterisation of dye sensitised nanocrystalline TiO2 solar cells with liquid electrolyte and solid-state organic hole conductor Kron G, Egerter T, Nelles G, Yasuda A, Werner JH, Rau U |
247 - 251 |
A comparison between state-of-the-art'gilch' and'sulphinyl' synthesised MDMO-PPV/PCBM bulk hetero-junction solar cells Munters T, Martens T, Goris L, Vrindts V, Manca J, Lutsen L, De Ceuninck W, Vanderzande D, De Schepper L, Gelan J, Sariciftci NS, Brabec CJ |
252 - 257 |
Band energy diagram of CdTe thin film solar cells Fritsche J, Kraft D, Thissen A, Mayer T, Klein A, Jaegermann W |
258 - 262 |
A two-dimensional modeling of the fine-grained polycrystalline silicon thin-film solar cells Christoffel E, Rusu M, Zerga A, Bourdais S, Noel S, Slaoui A |
263 - 266 |
Photoelements based on CdTe diodes with a surface barrier Gorley PM, Demych MV, Horley PP, Makhniy VP, Ciach R, Beltowska-Lehman E, Swiatek Z |
267 - 270 |
Photoelectric properties of cadmium-zinc telluride heterojunctions Gorley PM, Demych MV, Horley PP, Makhniy VP, Ciach R, Beltowska-Lehman E, Swiatek Z |
271 - 274 |
Solid-state organic/inorganic hybrid solar cells based on conjugated polymers and dye-sensitized TiO2 electrodes Gebeyehu D, Brabec CJ, Sariciftci NS |
275 - 279 |
Hydrogenated amorphous silicon films with low defect density prepared by argon dilution: application to solar cells Ray PP, Chaudhuri P, Chatterjee R |
280 - 286 |
Light induced changes in the electrical behavior of CdTe and Cu(In,Ga)Se-2 solar cells Kontges M, Reineke-Koch R, Nollet P, Beier J, Schaffler R, Parisi J |
287 - 292 |
Design considerations for thin-film silicon solar cells from the porous silicon (PSI) process Scholten D, Horbelt R, Kintzel W, Brendel R |
293 - 296 |
Comparison of structural and electrical properties of Cu(In, Ga)Se-2 for substrate and superstrate solar cells Haug FJ, Rudmann D, Bilger G, Zogg H, Tiwari AN |
297 - 301 |
Extraction of bulk and contact components of the series resistance in organic bulk donor-acceptor-heterojunctions Aernouts T, Geens W, Poortmans J, Heremans P, Borghs S, Mertens R |
302 - 306 |
Laser-assisted chemical vapor deposition of thick poly-Si layers for solar cells Della Sala D, Loreti S, Fornarini L, Menicucci I, Santoni A, Delli Veneri P, Minarini C, Privato C, Lancock J |
307 - 311 |
Dry cleaning process of crystalline silicon surface in a-Si : H/c-Si heterojunction for photovoltaic applications Tucci M, Salurso E, Roca E, Palma F |
312 - 319 |
Comparison of optical and electrochemical properties of anatase and brookite TiO2 synthesized by the sol-gel method Koelsch M, Cassaignon S, Guillemoles JF, Jolivet JR |
320 - 324 |
The change of the electronic properties of CIGS devices induced by the'damp heat' treatment Igalson M, Wimbor M, Wennerberg J |
325 - 330 |
Influence of damp heat testing on the electrical characteristics of Cu(In,Ga)(S,Se)(2) solar cells Deibel C, Dyakonov V, Parisi J, Palm J, Zweigart S, Karg F |
331 - 334 |
Structural, optical and electrical properties of beta-In2S3-3xO3x thin films obtained by PVD Barreau N, Marsillac S, Albertini D, Bernede JC |
335 - 338 |
Sol-gel TiO2 antireflective films for textured monocrystalline silicon solar cells San Vicente S, Morales A, Gutierrez MT |
339 - 343 |
Study of CIGS/In(OH)(x)S-y heterojunctions Bayon R, Maffiotte C, Herrero J |
344 - 348 |
Contribution of the ZnSe/CuGaSe2 heterojunction in photovoltaic performances of chalcopyrite-based solar cells Rusu M, Sadewasser S, Glatzel T, Gashin P, Simashkevich A, Jager-Waldau A |
349 - 353 |
Hydrogenated amorphous silicon carbon alloys for solar cells Ambrosone G, Coscia U, Lettieri S, Maddalena P, Privato C, Ferrero S |
354 - 358 |
Modelling a-Si : H based p-i-n structures for optical sensor applications Vygranenko Y, Fernandes M, Louro P, Vieira M |
359 - 362 |
The influence of the amorphous silicon deposition temperature on the efficiency of the ITO/A-Si : H/C-Si heterojunction (HJ) solar cells and properties of interfaces Ulyashin AG, Job R, Scherff M, Gao MZ, Fahrner WR, Lyebyedyev D, Roos N, Scheer HC |
363 - 367 |
Memory effects in highly resistive p-i-n heterojunctions for optical applications Schwarz R, Louro P, Vygranenko Y, Fernandes M, Vieira M, Schubert M |
368 - 372 |
The influence of materials work function on the open circuit voltage of plastic solar cells Brabec CJ, Cravino A, Meissner D, Sariciftci NS, Rispens MT, Sanchez L, Hummelen JC, Fromherz T |
373 - 379 |
Sensitization of low bandgap polymer bulk heterojunction solar cells Winder C, Matt G, Hummelen JC, Janssen RAJ, Sariciftci NS, Brabec CJ |
380 - 383 |
Morphology and structure of organic thin films for solar cells and transistors application Videlot C, Ackermann J, El Kassmi A, Raynal P |
384 - 389 |
Dielectric barriers for flexible CIGS solar modules Herz K, Kessler E, Wachter R, Powalla M, Schneider J, Schulz A, Schumacher U |
390 - 395 |
Facile modulation of single source precursors: the synthesis and characterization of single source precursors for deposition of ternary chalcopyrite materials Banger KK, Harris JD, Cowen JE, Hepp AF |
396 - 404 |
Grain boundaries and impurities in CdTe/CdS solar cells Durose K, Cousins MA, Boyle DS, Beier J, Bonnet D |
405 - 409 |
The puzzle of Cu(In,Ga)Se-2 (CIGS) solar cells stability Guillemoles JF |
410 - 414 |
Quantitative study of electron transport in nanostructured materials by means of transient absorption spectroscopy van 't Spijker H, Goossens A |
415 - 418 |
Charge transport in pi-conjugated polymers from extraction current transients Genevicius K, Osterbacka R, Juska G, Arlauskas K, Stubb H |
419 - 424 |
Optical and electrooptical absorption in conducting polymers Kirova N, Brazovskii S |
425 - 431 |
XPS and electrical studies of buried interfaces in Cu(In,Ga)Se-2 solar cells Canava B, Vigneron J, Etcheberry A, Guimard D, Guillemoles JF, Lincot D, Hamatly SOS, Djebbour Z, Mencaraglia A |
432 - 437 |
Investigations of atomic diffusion at CIGSSe/ZnSe interfaces with heavy ion elastic recoil detection analysis (HI-ERDA) Lindner S, Bohne W, Jager-Waldau A, Lux-Steiner MC, Rohrich J, Vogl G |
438 - 443 |
Organic co-evaporated films of a PPV-pentamer and C-60: model systems for donor/acceptor polymer blends Geens W, Aernouts T, Poortmans J, Hadziioannou G |
444 - 448 |
Highly ordered anisotropic nano-needles in para-sexiphenyl films Andreev A, Sitter H, Sariciftci NS, Brabec CJ, Springholz G, Hinterdorfer P, Plank H, Resel R, Thierry A, Lotz B |
449 - 452 |
Contactless characterization of a-Si : H films on crystalline silicon substrates von Aichberger S, Wunsch F, Kunst M |
453 - 456 |
Spatially resolved photoluminescence measurements on Cu(In,Ga)Se-2 thin films Bothe K, Bauer GH, Unold T |
457 - 461 |
Growth of PbS thin films on silicon substrate by SILAR technique Puiso J, Tamulevicius S, Laukaitis G, Lindroos S, Leskela M, Snitka V |
462 - 466 |
Ultrafast carrier dynamics in CdSe nanocrystalline films on crystalline silicon substrate Maly P, Trojanek F, Miyoshi T, Yamanaka K, Luterova K, Pelant I, Nemec P |
467 - 470 |
Electron diffraction and high-resolution transmission microscopy studies of nanostructured Si thin films deposited by radiofrequency dusty plasmas Viera G, Huet S, Mikikian M, Boufendi L |
471 - 475 |
X-Ray, kinetic and optical properties of thin CuInS2 films Gonzalez-Hernandez J, Gorley PM, Horley PP, Vartsabyuk OM, Vorobiev YV |
476 - 479 |
Characterization and application of a-SiCx : H films for the passivation of the c-Si surface Martin I, Vetter M, Orpella A, Puigdollers J, Voz C, Marsal LF, Pallares J, Alcubilla R |
480 - 484 |
Optical switching in thin film electrochemical cells employing hydrogenated Pd/Y cathode Parkhutik V, Matveeva E |
485 - 488 |
Optical and structural investigation of ZnO thin films prepared by chemical vapor deposition (CVD) Purica M, Budianu E, Rusu E, Danila M, Gavrila R |
489 - 494 |
Morphological characterization of poly(3-octylthiophene): plasticizer : C-60 blends Camaioni N, Catellani M, Luzzati S, Migliori A |
495 - 499 |
Photoluminescence and sub band gap absorption of CuGaSe2 thin films Meeder A, Marron DF, Chu V, Conde JP, Jager-Waldau A, Rumberg A, Lux-Steiner MC |
500 - 504 |
Properties of silicon oversaturated with implanted hydrogen Popov VP, Tyschenko IE, Safronov LN, Naumova OV, Antonova IV, Gutakovsky AK, Talochkin AB |
505 - 509 |
Low-temperature preparation of MoS2 thin films on glass substrate with NaF additive Barreau N, Bernede JC |
510 - 512 |
Recombination of electronic excitations in regioregular poly(3-dodecylthiophene) Westerling M, Osterbacka R, Stubb H |
513 - 516 |
Defects induced in amorphous silicon thin films by light soaking Pivac B, Kovacevic I, Zulim I |
517 - 521 |
Calculations of the reflectance of porous silicon and other antireflection coating to silicon solar cells Aroutiounian VM, Maroutyan KR, Zatikyan AL, Touryan KJ |
522 - 525 |
Microstructural changes of CdTe during the annealing process Chapman AJ, Lane DW, Rogers KD, Ozsan ME |
526 - 529 |
Optoelectronic properties of microcrystalline silicon films Wunsch F, Citarella G, Kunst M |
530 - 534 |
Raman study of Zn1-xBexSe/GaAs systems with low Be-content (x <= 0.31) Ajjoun M, Pages O, Laurenti JP, Bormann D, Chauvet C, Tournie E, Faurie JP, Gorochov O |
535 - 538 |
LO phonon-plasmon coupling in N-doped Zn1-xBexSe/GaAs (x <= 0.15) Ajjoun M, Pages O, Laurenti JP, Bormann D, Chauvet C, Tournie E, Faurie JP |
539 - 542 |
Influence of the a-Si : H structural defects studied by positron annihilation on the solar cells characteristics Amaral A, Lavareda G, de Carvalho CN, Brogueira P, Gordo PM, Subrahmanyam VS, Gil CL, Naia MD, de Lima AP |
543 - 548 |
Electron microscopic characterization of microcrystalline silicon thin films deposited by ECR-CVD Sieber I, Wanderka N, Kaiser I, Fuhs W |
549 - 552 |
EBIC technique applied to polycrystalline silicon thin films: minority carrier diffusion length improvement by hydrogenation Ballutaud D, Riviere A, Rusu M, Bourdais S, Slaoui A |
553 - 557 |
Optimizing n-ZnnO/p-Si heterojunctions for photodiode applications Lee JY, Choi YS, Kim JH, Park MO, Im S |
558 - 562 |
Ge layer transfer to Si for photovoltaic applications Zahler JM, Ahn CG, Zaghi S, Atwater HA, Chu C, Iles P |