Thin Solid Films

Thin Solid Films, Vol.557 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (80 articles)

1 - 3	Untitled Preface [Anonymous]
4 - 9	Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers Bogumilowicz Y, Hartmann JM
10 - 13	Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4-B2H6-H-2 gas mixture without substrate heating Abe Y, Sakuraba M, Murota J
14 - 18	Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition Yamamoto Y, Heinemann B, Murota J, Tillack B
19 - 26	Potentialities of disilane for the low temperature epitaxy of intrinsic and boron-doped SiGe Hartmann JM, Benevent V, Veillerot M, Halimaoui A
27 - 30	Surfactant-mediated epitaxy of silicon germanium films on silicon (001) substrates Wietler TF, Schmidt J, Tetzlaff D, Bugiel E
31 - 35	Epitaxial growth of Si-1 (-) Ge-x(x) alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating Ueno N, Sakuraba M, Murota J, Sato S
36 - 41	Chemical vapor deposition processes for the fabrication of epitaxial Si-O superlattices Jayachandran S, Delabie A, Maggen J, Caymax M, Loo R, Meersschaut J, Lenka H, Vandervorst W, Heyns M
42 - 49	3D heteroepitaxy of mismatched semiconductors on silicon Falub CV, Kreiliger T, Isa F, Taboada AG, Meduna M, Pezzoli F, Bergamaschini R, Marzegalli A, Muller E, Chrastina D, Isella G, Neels A, Niedermann P, Dommann A, Miglio L, von Kanel H
50 - 54	Heteroepitaxial growth of Ge on compliant strained nano-structured Si lines and dots on (001) silicon on insulator substrate Zaumseil P, Yamamoto Y, Schubert MA, Schroeder T, Tillack B
55 - 60	Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays Kim B, Kim SW, Jang H, Kim JH, Koo S, Kim DH, Min BG, Ko DH
61 - 65	Structural transition in Ge growth on Si mediated by sub-monolayer carbon Itoh Y, Hatakeyama S, Washio K
66 - 69	Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy Nishida K, Xu XJ, Sawano K, Maruizumi T, Shiraki Y
70 - 75	Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source Luong TKP, Ghrib A, Dau MT, Zrir MA, Stoffel M, Le Thanh V, Daineche R, Le TG, Heresanu V, Abbes O, Petit M, El Kurdi M, Boucaud P, Rinnert H, Murota J
76 - 79	Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer Sawano K, Hoshi Y, Endo S, Nagashima T, Arimoto K, Yamanaka J, Nakagawa K, Yamada S, Hamaya K, Miyao M, Shiraki Y
80 - 83	Effect of deposition rate on the characteristics of Ge quantum dots on Si (001) substrates Gotoh K, Oshima R, Sugaya T, Sakata I, Matsubara K, Kondo M
84 - 89	Epitaxial formation and electrical properties of Ni germanide/Ge(110) contacts Deng YS, Nakatsuka O, Yokoi J, Taoka N, Zaima S
90 - 93	N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing Hara KO, Hoshi Y, Usami N, Shiraki Y, Nakamura K, Toko K, Suemasu T
94 - 100	Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices Mochizuki S, Loesing R, Zhu ZM, Domenicucci AG, Flaitz PL, Li JH, Paruchuri V
101 - 105	Fabrication of ultra-thin strained silicon on insulator by He implantation and ion cut techniques and characterization Mu ZQ, Xue ZY, Wei X, Chen D, Zhang M, Di ZF, Wang X
106 - 109	Dislocation behavior of surface-oxygen-concentration controlled Si wafers Asazu H, Takeuchi S, Sannai H, Sudo H, Araki K, Nakamura Y, Izunome K, Sakai A
110 - 114	HCl defect revelation in 200mm SiGe virtual substrates: A systematic study Hartmann JM, Abbadie A
115 - 119	Order and temperature dependence of surface blistering in H and He co-implanted Ge Dai JY, Wei X, Xue ZY, Di ZF, Zhang M
120 - 124	Study of Ge loss during Ge condensation process Xue ZY, Di ZF, Ye L, Mu ZQ, Chen D, Wei X, Zhang M, Wang X
125 - 128	Dynamic analysis of rapid-melting growth using SiGe on insulator Matsumura R, Tojo Y, Kurosawa M, Sadoh T, Miyao M
129 - 134	Characterization of crystalline structures of SiGe substrate formed by traveling liquidus-zone method for devices with Ge/SiGe structures Yamaha T, Nakatsuka O, Taoka N, Kinoshita K, Yoda S, Zaima S
135 - 138	Coherent lateral-growth of Ge over insulating film by rapid-melting-crystallization Sadoh T, Kurosawa M, Toko K, Miyao M
139 - 142	In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth Chikita H, Matsumura R, Tojo Y, Yokoyama H, Sadoh T, Miyao M
143 - 146	Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer Numata R, Toko K, Nakazawa K, Usami N, Suemasu T
147 - 150	Large-grained (111)-oriented Si/Al/SiO2 structures formed by diffusion-controlled Al-induced layer exchange Numata R, Toko K, Usami N, Suemasu T
151 - 154	Enhanced Au induced lateral crystallization in electron-irradiated amorphous Ge on SiO2 Sakiyama S, Kaneko T, Ootsubo T, Sakai T, Nakashima K, Moto K, Yoneoka M, Takakura K, Tsunoda I
155 - 158	Sn-induced low-temperature (similar to 150 degrees C) crystallization of Ge on insulator Ooato A, Suzuki T, Park JH, Miyao M, Sadoh T
159 - 163	Influence of Ge substrate orientation on crystalline structures of Ge-1 (-) Sn-x(x) epitaxial layers Asano T, Kidowaki S, Kurosawa M, Taoka N, Nakatsuka O, Zaima S
164 - 168	Formation and characterization of locally strained Ge-1 (-) Sn-x(x)/Ge microstructures Ike S, Moriyama Y, Kurosawa M, Taoka N, Nakatsuka O, Imai Y, Kimura S, Tezuka T, Zaima S
169 - 172	Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn Oehme M, Kostecki K, Schmid M, Oliveira F, Kasper E, Schulze J
173 - 176	Analysis for positions of Sn atoms in epitaxial Ge-1 (-) Sn-x(x) film in low temperature depositions Kamiyama E, Sueoka K, Nakatsuka O, Taoka N, Zaima S, Izunome K, Kashima K
177 - 182	Synthesis and optical properties of Sn-rich Ge1-x - ySixSny materials and devices Xu C, Beeler RT, Jiang LY, Gallagher JD, Favaro R, Menendez J, Kouvetakis J
183 - 187	SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications Wirths S, Buca D, Ikonic Z, Harrison P, Tiedemann AT, Hollander B, Stoica T, Mussler G, Breuer U, Hartmann JM, Grutzmacher D, Mantl S
188 - 191	Reflection high energy electron diffraction studies on SixSnyGe1-x-y on Si(100) molecular beam epitaxial growth Nikiforov AI, Mashanov VI, Timofeev VA, Pchelyakov OP, Cheng HH
192 - 196	Stabilized formation of tetragonal ZrO2 thin film with high permittivity Kato K, Saito T, Shibayama S, Sakashita M, Takeuchi W, Taoka N, Nakatsuka O, Zaima S
197 - 202	Conductive and transparent V-doped ZnO thin films grown by radio frequency magnetron sputtering Okuda S, Matsuo T, Chiba H, Mori T, Washio K
203 - 206	Thermal stability of conductive and transparent V-doped ZnO thin films Chiba H, Mori T, Okuda S, Washio O
207 - 211	A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation Tanaka T, Shiojima K, Otoki Y, Tokuda Y
212 - 215	Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing Takimoto T, Takeshita K, Nakamura S, Okumura T
216 - 221	Photo-induced current and its degradation in Al4C3/Al2O3 (0001) grown by metalorganic chemical vapor deposition Kim D, Onishi Y, Oki R, Sakai S
222 - 226	Improved depth resolution of secondary ion mass spectrometry profiles in diamond: A quantitative analysis of the delta-doping Fiori A, Jomard F, Teraji T, Chicot G, Bustarret E
227 - 230	High growth rate deposition of phosphorus- doped homoepitaxial (001) diamond films for deep-ultraviolet light emitting device Maida O, Tada S, Ito T
231 - 236	Isotopic enrichment of diamond using microwave plasma-assisted chemical vapor deposition with high carbon conversion efficiency Teraji T
237 - 240	Extraction of interface state density at SiO2/SiC interfaces based on impedance measurements with different temperatures Yoshida N, Waki E, Arai M, Yamasaki K, Han JH, Takenaka M, Takagi S
241 - 248	Schottky barrier height and thermal stability of p-diamond (100) Schottky interfaces Teraji T, Koide Y, Ito T
249 - 253	Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy Nowak R, Moraru D, Mizuno T, Jablonski R, Tabe M
254 - 257	Schottky barrier height systematics studied by partisan interlayer Long W, Li Y, Tung RT
258 - 261	Alternating current operation of low-Mg-doped p-GaN Schottky diodes Aoki T, Kaneda N, Mishima T, Shiojima K
262 - 267	Nano-scale surface morphology optimization of the ohmic contacts and electrical properties of AlGaN/GaN high electron mobility transistors using a rapid thermal annealing dielectric protection layer Cho SJ, Wang C, Kim NY
268 - 271	High-temperature isothermal capacitance transient spectroscopy study on SiN deposition damages for low-Mg-doped p-GaN Schottky diodes Shiojima K, Wakayama H, Aoki T, Kaneda N, Nomoto K, Mishima T
272 - 275	HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks Li XY, Yajima T, Nishimura T, Nagashio K, Toriumi A
276 - 281	Importance of control of oxidant partial pressure on structural and electrical properties of Pr-oxide films Kato K, Sakashita M, Takeuchi W, Taoka N, Nakatsuka O, Zaima S
282 - 287	Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties Shibayama S, Kato K, Sakashita M, Takeuchi W, Taoka N, Nakatsuka O, Zaima S
288 - 291	Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method Wang D, Nagatomi Y, Kojima S, Yamamoto K, Nakashima H
292 - 297	Studies of local electric properties and annealing behaviors of thin Er2O3 film grown on Ge substrates Zhang HY, Wang W, Ji T, Yang XJ, Jiang ZM
298 - 301	Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications Kim M, Kim Y, Yokoyama M, Nakane R, Kim S, Takenaka M, Takagi S
302 - 306	Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode Kawashima T, Sakuraba M, Murota J
307 - 310	Radiation tolerance of Si-1 (-) C-y(y) source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations Nakashima T, Asai Y, Hori M, Yoneoka M, Tsunoda I, Takakura K, Gonzalez MB, Simoen E, Claeys C, Yoshino K
311 - 315	Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width Lee CC, Liu CH, Hsu HW, Hung MH
316 - 322	Mechanical property effects of Si-1 (-) Ge-x(x) channel and stressed contact etching stop layer on nano-scaled n-type metal-oxide-semiconductor field effect transistors Lee CC, Cheng HC, Hsu HW, Chen ZH, Teng HH, Liu CH
323 - 328	Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern Lee CC, Liu CH, Deng RH, Hsu HW, Chiang KN
329 - 333	Ultra high hole mobilities in a pure strained Ge quantum well Mironov OA, Hassan AHA, Morris RJH, Dobbie A, Uhlarz M, Chrastina D, Hague JP, Kiatgamolchai S, Beanland R, Gabani S, Berkutovh IB, Helmi M, Drachenko O, Myronov M, Leadley DR
334 - 337	Impacts of oxygen passivation on poly-crystalline germanium thin film transistor Kabuyanagi S, Nishimura T, Nagashio K, Toriumi A
338 - 341	Control of geometry in Si-based photonic nanostructures formed by maskless wet etching process and its impact on optical properties Hoshi Y, Tayagaki T, Kiguchi T, Usami N
342 - 345	Fabrication and evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulator Kim Y, Takenaka M, Osada T, Hata M, Takagi S
346 - 350	High-luminance and high-efficiency multi-chip light-emitting diode array packaging platform with nanoscale anodized aluminum oxide on silicon substrate Wang C, Cho SJ, Kim NY
351 - 354	Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes Schmid M, Oehme M, Gollhofer M, Korner R, Kaschel M, Kasper E, Schulze J
355 - 362	Improvement of photoluminescence from Ge layer with patterned Si3N4 stressors Oda K, Okumura T, Tani K, Saito S, Ido T
363 - 367	Microdisk enhanced photodetector based on Ge self-assembled quantum dots on silicon-on-insulator Xu XJ, Chiba T, Maruizumi T, Shiraki Y
368 - 371	Carrier extraction dynamics from Ge/Si quantum wells in Si solar cells Tayagaki T, Hoshi Y, Ooi K, Kiguchi T, Usami N
372 - 375	Fabrication of an ultra-thin silicon solar cell and nano-scale honeycomb structure by thermal-stress-induced pattern transfer method Du CH, Wang TY, Chen CH, AndrewYeh J
376 - 381	Periodic arrays of nanopores made on single-crystalline silicon substrates with a self-assembled lithographic process Cheng SL, Lin YH, Lee SW, Chen H
382 - 385	Room-temperature electrical creation of spin accumulation in n-Ge using highly resistive Fe3Si/n(+)-Ge Schottky-tunnel contacts Hamaya K, Takemoto G, Baba Y, Kasahara K, Yamada S, Sawano K, Miyao M
386 - 389	A magnetic tunnel junction with an L2(1)-ordered Co2FeSi electrode formed by all room-temperature fabrication processes Fujita Y, Yamada S, Maeda Y, Miyao M, Hamaya K
390 - 393	High-quality Co2FeSi0.5Al0.5/Si heterostructures for spin injection in silicon spintronic devices Tanikawa K, Oki S, Yamada S, Kawano M, Miyao M, Hamaya K