Thin Solid Films

Thin Solid Films, Vol.602 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (20 articles)

1 - 2	ICSI-9, Montreal 2015: Silicon for now and beyond Baribeau JM, Bauer M, Desjardins P, Lee ML, Loo R, Moutanabbir O, Rastelli A, Reznicek A, Quitoriano N
3 - 6	Low-temperature (<= 300 degrees C) formation of orientation-controlled large-grain (>= 10 mu m) Ge-rich SiGe on insulator by gold-induced crystallization Sadoh T, Park JH, Aoki R, Miyao M
7 - 12	Characterization of crystallinity of Ge1-xSnx epitaxial layers grown using metal-organic chemical vapor deposition Inuzuka Y, Ike S, Asano T, Takeuchi W, Nakatsuka O, Zaima S
13 - 19	Structural and electronic properties of in-situ phosphorous-doped Ge layers grown by reduced pressure-chemical vapour deposition Hartmann JM, Benevent V, Reboud V, Chelnokov A, Guilloy K, Pauc N, Calvo V
20 - 23	High Sn-concentration (similar to 8%) GeSn by low-temperature (similar to 150 degrees C) solid-phase epitaxy of a-GeSn/c-Ge Sadoh T, Ooato A, Park JH, Miyao M
24 - 28	C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition Yamamoto Y, Ueno N, Sakuraba M, Murota J, Mai A, Tillack B
29 - 31	Optimization of Si-C reaction temperature and Ge thickness in C-mediated Ge dot formation Satoh Y, Itoh Y, Kawashima T, Washio K
32 - 35	Formation of Ge dot or film in Ge/Si heterostructure by using sub-monolayer carbon deposition on top and in-situ post annealing Itoh Y, Hatakeyama S, Kawashima T, Washio K
36 - 42	Epitaxial growth of Si and SiGe at temperatures lower than 500 degrees C with disilane and germane Aubin J, Hartmann JM, Benevent V
43 - 47	Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure Wang D, Maekura T, Yamamoto K, Nakashima H
48 - 51	Study on electroluminescence from multiply-stacking valency controlled Si quantum dots Yamada T, Makihara K, Ohta A, Ikeda M, Miyazaki S
52 - 55	Fabrication of mid-infrared plasmonic antennas based on heavily doped germanium thin films Samarelli A, Frigerio J, Sakat E, Baldassarre L, Gallacher K, Finazzi M, Isella G, Ortolani M, Biagioni P, Paul DJ
56 - 59	Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence Shimura Y, Srinivasan SA, Van Thourhout D, Van Deun R, Pantouvaki M, Van Campenhout J, Loo R
60 - 63	Expanding the Ge emission wavelength to 2.25 mu m with SixNy strain engineering Millar RW, Gallacher K, Samarelli A, Frigerio J, Chrastina D, Dieing T, Isella G, Paul DJ
64 - 67	Self-aligned double patterning process for subtractive Ge fin fabrication at 45-nm pitch Milenin AP, Witters L, Barla K, Thean A
68 - 71	Evaluation of field emission properties from multiple-stacked Si quantum dots Takeuchi D, Makihara K, Ohta A, Ikeda M, Miyazaki S
72 - 77	Properties and growth peculiarities of Si0.30Ge0.70 stressor integrated in 14 nm fin-based p-type metal-oxide-semiconductor field-effect transistors Hikavyy A, Rosseel E, Kubicek S, Mannaert G, Favia P, Bender H, Loo R, Horiguchi N
78 - 83	Ge1-xSix on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships Lee CC, Hsieh CP, Huang PC, Cheng SW, Liao MH
84 - 89	Evidence of strong spin-orbit interaction in strained epitaxial germanium Morrison C, Foronda J, Wisniewski P, Rhead SD, Leadley DR, Myronov M
90 - 94	Thermoelectric cross-plane properties on p- and n-Ge/SixGe1-x superlattices Llin LF, Samarelli A, Cecchi S, Chrastina D, Isella G, Gubler EM, Etzelstorfer T, Stangl J, Paul DJ