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Preface for ROCAM 2015 Pintilie L |
2 - 6 |
Gamma irradiation effects on the properties of indium zinc oxide thin films Craciun D, Socol G, Le Caer S, Trinca LM, Galca AC, Pantelica D, Ionescu P, Craciun V |
7 - 15 |
A comparative study of charge trapping in HfO2/Al2O3 and ZrO2/Al2O3 based multilayered metal/high-k/oxide/Si structures Spassov D, Skeparovski A, Paskaleva A, Novkovski N |
16 - 24 |
Correlation between electrical parameters and defect states of polythiophene:fullerene based solar cell Kaiser M, Nadazdy V, Siffalovic P, Ivanco J, Majkova E |
25 - 30 |
Surface modification of polymethylmethacrylate foils using an atmospheric pressure plasma jet in presence of water vapors Acsente T, Ionita MD, Teodorescu M, Marascu V, Dinescu G |
31 - 35 |
Influence of metallic and semiconducting nanostructures on the optical properties of dye-doped polymer thin films Enculescu M, Matei E |
36 - 41 |
Growth and characterization of ternary Ni, Mg-Al and Ni-Al layered double hydroxides thin films deposited by pulsed laser deposition Birjega R, Vlad A, Matei A, Ion V, Luculescu C, Dinescu M, Zavoianu R |
43 - 43 |
9th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO9) Preface Ginley D, Granqvist CG, Kiriakidis G, Klein A, Kamiya T, Hosono H |
44 - 46 |
Lowering the growth temperature of strongly-correlated YbFe2O4 thin films prepared by pulsed laser deposition Kashimoto R, Yoshimura T, Ashida A, Fujimura N |
47 - 51 |
Effect of fiber stretch on quasi-phase-matching for second-harmonic generation in thermally poled twin-hole silica-glass fiber Mizunami T, Sasaki R, Kimura T |
52 - 55 |
High performance top-gated indium-zinc-oxide thin film transistors with in-situ formed HfO2 gate insulator Song Y, Zaslavsky A, Paine DC |
56 - 61 |
Textured surface structures formed using new techniques on transparent conducting Al-doped zinc oxide films prepared by magnetron sputtering Minami T, Miyata T, Uozaki R, Sai H, Koida T |
62 - 68 |
Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films Frischbier MV, Wardenga HF, Weidner M, Bierwagen O, Jia JJ, Shigesato Y, Klein A |
69 - 72 |
Determination of 4f energy levels for trivalent lanthanide ions in YAlO3 by X-ray photoelectron spectroscopy Shimizu Y, Ueda K |
73 - 78 |
Effects of thermal annealing on elimination of deep defects in amorphous In-Ga-Zn-O thin-film transistors Tang HC, Ide K, Hiramatsu H, Ueda S, Ohashi N, Kumomi H, Hosono H, Kamiya T |
79 - 83 |
Comparison of ZnO:B and ZnO:Al layers for Cu(In,Ga)Se-2 submodules Koida T, Nishinaga J, Higuchi H, Kurokawa A, Iioka M, Kamikawa-Shimizu Y, Yamada A, Shibata H, Niki S |
84 - 89 |
Ultrawide band gap amorphous oxide semiconductor, Ga-Zn-O Kim J, Miyokawa N, Sekiya T, Ide K, Toda Y, Hiramatsu H, Hosono H, Kamiya T |
90 - 96 |
Recent progress in thermochromics and electrochromics: A brief survey Granqvist CG |