1 - 10 |
Incorporation of the doping elements Sn, N, and P in CuInS2 thin films prepared by co-evaporation Scheer R, Luck I, Kanis M, Matsui M, Watanabe T, Yamamoto T |
11 - 15 |
Influences of optical emission settings on wear performance of metal-doped diamond-like carbon films deposited by unbalanced magnetron sputtering Wang DY, Chang CL |
16 - 21 |
Growth characterization and properties of diamond-like carbon films by electron cyclotron resonance chemical vapor deposition Lung BH, Chiang MJ, Hon MH |
22 - 28 |
Structural and electrochemical characterization of'open-structured' ITO films Wang ZC, Hu XF |
29 - 33 |
X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate Qu B, Zheng XH, Wang YT, Feng ZH, Liu SA, Lin SM, Yang H, Liang JW |
34 - 39 |
Electrical conductivity and crystallization kinetics of Se70Te30 films Moharram AH |
40 - 49 |
The effects of phosphorus on the crystallisation and photoluminescence behaviour of aerosol-gel deposited SiO2-TiO2-Er2O3-P2O5 thin films Coutier C, Meffre W, Jenouvrier P, Fick J, Audier M, Rimet R, Jacquier B, Langlet M |
50 - 55 |
Luminescent mechanisms of ZnS : Cu : Cl and ZnS : Cu : Al phosphors Chen YY, Duh JG, Chiou BS, Peng CG |
56 - 64 |
Characterization of carburized tantalum layers prepared in inductive RF plasma Raveh A, Danon A, Hayon J, Rubinshtein A, Shneck R, Klemberg-Sapieha JE, Martinu L |
65 - 74 |
Finite element modeling of the stresses, fracture and delamination during the indentation of hard elastic films on elastic-plastic soft substrates Souza RM, Mustoe GGW, Moore JJ |
75 - 84 |
Measurements of elastic properties of ultra-thin diamond-like carbon coatings using atomic force acoustic microscopy Amelio S, Goldade AV, Rabe U, Scherer V, Bhushan B, Arnold W |
85 - 90 |
The influence of alternative group-V sources on heterointerface quality in the system GaInAs(P) on InP Gerhardt M, Kirpal G, Schwabe R, Benndorf G, Gottschalch V |
91 - 97 |
Structural and electrical properties of In2O3 : Sn films prepared by radio-frequency sputtering Mergel D, Schenkel M, Ghebre M, Sulkowski M |
98 - 106 |
Solid solutions GeSi grown by MBE on a low temperature Si(001) buffer layer: specific features of plastic relaxation Bolkhovityanov YB, Gutakovskii AK, Mashanov VI, Pchelyakov OP, Revenko MA, Sokolov LV |
107 - 112 |
Surface modification of spin-on-glass film by liquid-phase deposition of fluorinated silicon oxide Homma T, Kondo H, Inohara K, Nomoto M, Sakamoto M, Ariyama Y, Takahashi H |
113 - 121 |
Electrical and NOx gas sensing properties of metallophthalocyanine-doped polypyrrole/silicon heterojunctions Van CN, Potje-Kamloth K |
122 - 127 |
Dry patterning of copper films using an O-2 plasma and hexafluoroacetylacetone Lee W, Yang HJ, Reucroft PJ, Soh HS, Kim JH, Woo SL, Lee J |
128 - 133 |
Preparation of Bi2WO6 thin films by metalorganic chemical vapor deposition and their electrical properties Ishikawa K, Watanabe T, Funakubo H |
134 - 141 |
Characterization of sputter-deposited WO3 and CeO2-x-TiO2 thin films for electrochromic applications Janke N, Bieberle A, Weissmann R |
142 - 148 |
Densification and aging of ZrO2 films prepared by sol-gel Brenier R, Gagnaire A |
149 - 149 |
Effects of additives on properties of MgO thin films by electrostatic spray deposition (vol 694, pg 377, 2000) Kim SG, Choi KH, Eun JH, Kim HJ, Hwang CS |
150 - 150 |
Photoreflectance spectroscopy of InGaAsN/GaAs quantum wells grown by MBE (vol 380, pg 240, 2000) Sek G, Ryczko K, Misiewicz J, Fischer M, Reinhardt M, Forchel A |