1 - 5 |
Transparent and conducting ITO films: new developments and applications Granqvist CG, Hultaker A |
6 - 11 |
Effects of postannealing in ozone environment on opto-electrical properties of Sn-doped In2O3 thin films Mori N, Ooki S, Masubuchi N, Tanaka A, Kogoma M, Ito T |
12 - 16 |
Criteria for ITO (indium-tin-oxide) an organic light thin film as the bottom electrode of emitting diode Tak YH, Kim KB, Park HG, Lee KH, Lee JR |
17 - 22 |
A study of the effect of process oxygen on stress evolution in d.c. magnetron-deposited tin-doped indium oxide Yeom HY, Popovich N, Chason E, Paine DC |
23 - 27 |
Highly conducting transparent indium tin oxide films prepared by pulsed laser deposition Suzuki A, Matsushita T, Aoki T, Mori A, Okuda M |
28 - 31 |
Deposition of low-resistivity ITO on plastic substrates by DC arc-discharge ion plating Niino F, Hirasawa H, Kondo K |
32 - 35 |
Electrical properties of crystalline ITO films prepared at room temperature by pulsed laser deposition on plastic substrates Izumi H, Ishihara T, Yoshioka H, Motoyama M |
36 - 41 |
ITO thin films deposited at low temperatures using a kinetic energy controlled sputter-deposition technique Hoshi Y, Kiyomura T |
42 - 45 |
Fabrication of indium-tin-oxide films by dip coating process using ethanol solution of chlorides and surfactants Ota R, Seki S, Ogawa M, Nishide T, Shida A, Ide M, Sawada Y |
46 - 49 |
Rapid heat treatment for spin coated ITO films by electron plasma annealing method Wakagi M, Chahara K, Onisawa K, Kawakubo Y, Kichikawa T, Satoh T, Minemura T |
50 - 55 |
Applications of the particle ordering technique for conductive antireflection films Ishihara Y, Hirai T, Sakurai C, Koyanagi T, Nishida H, Komatsu M |
56 - 59 |
Formation of indium-tin-oxide films by dip coating process using indium dipropionate monohydroxide Shigeno E, Shimizu K, Seki S, Ogawa M, Shida A, Ide A, Sawada Y |
60 - 64 |
Improvement in the crystallinity of ZnO thin films by introduction of a buffer layer Nakamura T, Yamada Y, Kusumori T, Minoura H, Muto H |
65 - 68 |
Incorporation of boron in ZnO film from an aqueous solution containing zinc nitrate and dimethylamine-borane by electrochemical reaction Ishizaki H, Imaizumi M, Matsuda S, Izaki M, Ito T |
69 - 75 |
Effect of ZnO buffer layer on the quality of GaN films deposited by pulsed laser ablation Wang RP, Muto H, Yamada Y, Kusumori T |
76 - 81 |
New transparent conducting thin films using multicomponent oxides composed of ZnO and V2O5 prepared by magnetron sputtering Miyata T, Suzuki S, Ishii M, Minami T |
82 - 86 |
Electrical and optical properties of gallium-doped zinc oxide films deposited by dc magnetron sputtering Song PK, Watanabe M, Kon M, Mitsui A, Shigesato Y |
87 - 90 |
Characteristics of c-axis oriented large grain ZnO films prepared by low-pressure MO-CVD method Kashiwaba Y, Sugawara K, Haga K, Watanabe H, Zhang BP, Segawa Y |
91 - 95 |
Control of surface morphology of ZnO (0 0 0(1)over-bar) by hydrochloric acid etching Maki H, Ikoma T, Sakaguchi I, Ohashi N, Haneda H, Tanaka J, Ichinose N |
96 - 100 |
Electronic structure of p-type conducting transparent oxides Robertson J, Peacock PW, Towler MD, Needs R |
101 - 105 |
First-principles calculations for understanding high conductivity and optical transparency in InxCd1-x films Asahi R, Wang A, Babcock JR, Edleman NL, Metz AW, Lane MA, Dravid VP, Kannewurf CR, Freeman AJ, Marks TJ |
106 - 114 |
Defect chemistry and physical properties of transparent conducting oxides in the CdO-In2O3-SnO2 system Mason TO, Gonzalez GB, Kammler DR, Mansourian-Hadavi N, Ingram BJ |
115 - 118 |
Crystal structure of LaCuOS1-xSex oxychalcogenides Ueda K, Hosono H |
119 - 124 |
p-Type oxides for use in transparent diodes Tate J, Jayaraj MK, Draeseke AD, Ulbrich T, Sleight AW, Vanaja KA, Nagarajan R, Wager JF, Hoffman RL |
125 - 128 |
Preparation of transparent p-type (La1-xSrxO)CuS thin films by r.f. sputtering technique Hiramatsu H, Ueda K, Ohta H, Orita M, Hirano M, Hosono H |
129 - 133 |
Properties of copper-aluminum oxide films prepared by solution methods Tonooka K, Shimokawa K, Nishimura O |
134 - 139 |
Preparation of highly conductive, deep ultraviolet transparent beta-Ga2O3 thin film at low deposition temperatures Orita M, Hiramatsu H, Ohta H, Hirano M, Hosono H |
140 - 146 |
Synthesis and processing of AgInO2 delafossite compounds by cation exchange reactions Clayton JE, Cann DP, Ashmore N |
147 - 151 |
Novel film growth technique of single crystalline In2O3(ZnO)(m) (m = integer) homologous compound Nomura K, Ohta H, Ueda K, Orita M, Hirano M, Hosono H |
152 - 160 |
Combinatorial studies of Zn-Al-O and Zn-Sn-O transparent conducting oxide thin films Perkins JD, del Cueto JA, Alleman JL, Warmsingh C, Keyes BM, Gedvilas LM, Parilla PA, To B, Readey DW, Ginley DS |
161 - 165 |
A new thin-film phosphor using multicomponent oxides composed of Y2O3 and GeO2 Minami T, Yamazaki M, Miyata T, Kobayashi Y, Shirai T |
166 - 170 |
Influence of atomic hydrogen on transparent conducting oxides during hydrogenated amorphous and microcrystalline Si preparation by catalytic chemical vapor deposition Masuda A, Imamori K, Matsumura H |
VII - VII |
Proceedings of the 2(nd) International Symposium on Transport Oxide Thin Films for Electronics and Optics (TOEO-2) - Tokyo, Japan, November 8-9, 2001 Hosono H, Ichinose N, Shigesato Y |