화학공학소재연구정보센터

Thin Solid Films

Thin Solid Films, Vol.411, No.1 Entire volume, number list
ISSN: 0040-6090 (Print) 

In this Issue (33 articles)

1 - 5 Transparent and conducting ITO films: new developments and applications
Granqvist CG, Hultaker A
6 - 11 Effects of postannealing in ozone environment on opto-electrical properties of Sn-doped In2O3 thin films
Mori N, Ooki S, Masubuchi N, Tanaka A, Kogoma M, Ito T
12 - 16 Criteria for ITO (indium-tin-oxide) an organic light thin film as the bottom electrode of emitting diode
Tak YH, Kim KB, Park HG, Lee KH, Lee JR
17 - 22 A study of the effect of process oxygen on stress evolution in d.c. magnetron-deposited tin-doped indium oxide
Yeom HY, Popovich N, Chason E, Paine DC
23 - 27 Highly conducting transparent indium tin oxide films prepared by pulsed laser deposition
Suzuki A, Matsushita T, Aoki T, Mori A, Okuda M
28 - 31 Deposition of low-resistivity ITO on plastic substrates by DC arc-discharge ion plating
Niino F, Hirasawa H, Kondo K
32 - 35 Electrical properties of crystalline ITO films prepared at room temperature by pulsed laser deposition on plastic substrates
Izumi H, Ishihara T, Yoshioka H, Motoyama M
36 - 41 ITO thin films deposited at low temperatures using a kinetic energy controlled sputter-deposition technique
Hoshi Y, Kiyomura T
42 - 45 Fabrication of indium-tin-oxide films by dip coating process using ethanol solution of chlorides and surfactants
Ota R, Seki S, Ogawa M, Nishide T, Shida A, Ide M, Sawada Y
46 - 49 Rapid heat treatment for spin coated ITO films by electron plasma annealing method
Wakagi M, Chahara K, Onisawa K, Kawakubo Y, Kichikawa T, Satoh T, Minemura T
50 - 55 Applications of the particle ordering technique for conductive antireflection films
Ishihara Y, Hirai T, Sakurai C, Koyanagi T, Nishida H, Komatsu M
56 - 59 Formation of indium-tin-oxide films by dip coating process using indium dipropionate monohydroxide
Shigeno E, Shimizu K, Seki S, Ogawa M, Shida A, Ide A, Sawada Y
60 - 64 Improvement in the crystallinity of ZnO thin films by introduction of a buffer layer
Nakamura T, Yamada Y, Kusumori T, Minoura H, Muto H
65 - 68 Incorporation of boron in ZnO film from an aqueous solution containing zinc nitrate and dimethylamine-borane by electrochemical reaction
Ishizaki H, Imaizumi M, Matsuda S, Izaki M, Ito T
69 - 75 Effect of ZnO buffer layer on the quality of GaN films deposited by pulsed laser ablation
Wang RP, Muto H, Yamada Y, Kusumori T
76 - 81 New transparent conducting thin films using multicomponent oxides composed of ZnO and V2O5 prepared by magnetron sputtering
Miyata T, Suzuki S, Ishii M, Minami T
82 - 86 Electrical and optical properties of gallium-doped zinc oxide films deposited by dc magnetron sputtering
Song PK, Watanabe M, Kon M, Mitsui A, Shigesato Y
87 - 90 Characteristics of c-axis oriented large grain ZnO films prepared by low-pressure MO-CVD method
Kashiwaba Y, Sugawara K, Haga K, Watanabe H, Zhang BP, Segawa Y
91 - 95 Control of surface morphology of ZnO (0 0 0(1)over-bar) by hydrochloric acid etching
Maki H, Ikoma T, Sakaguchi I, Ohashi N, Haneda H, Tanaka J, Ichinose N
96 - 100 Electronic structure of p-type conducting transparent oxides
Robertson J, Peacock PW, Towler MD, Needs R
101 - 105 First-principles calculations for understanding high conductivity and optical transparency in InxCd1-x films
Asahi R, Wang A, Babcock JR, Edleman NL, Metz AW, Lane MA, Dravid VP, Kannewurf CR, Freeman AJ, Marks TJ
106 - 114 Defect chemistry and physical properties of transparent conducting oxides in the CdO-In2O3-SnO2 system
Mason TO, Gonzalez GB, Kammler DR, Mansourian-Hadavi N, Ingram BJ
115 - 118 Crystal structure of LaCuOS1-xSex oxychalcogenides
Ueda K, Hosono H
119 - 124 p-Type oxides for use in transparent diodes
Tate J, Jayaraj MK, Draeseke AD, Ulbrich T, Sleight AW, Vanaja KA, Nagarajan R, Wager JF, Hoffman RL
125 - 128 Preparation of transparent p-type (La1-xSrxO)CuS thin films by r.f. sputtering technique
Hiramatsu H, Ueda K, Ohta H, Orita M, Hirano M, Hosono H
129 - 133 Properties of copper-aluminum oxide films prepared by solution methods
Tonooka K, Shimokawa K, Nishimura O
134 - 139 Preparation of highly conductive, deep ultraviolet transparent beta-Ga2O3 thin film at low deposition temperatures
Orita M, Hiramatsu H, Ohta H, Hirano M, Hosono H
140 - 146 Synthesis and processing of AgInO2 delafossite compounds by cation exchange reactions
Clayton JE, Cann DP, Ashmore N
147 - 151 Novel film growth technique of single crystalline In2O3(ZnO)(m) (m = integer) homologous compound
Nomura K, Ohta H, Ueda K, Orita M, Hirano M, Hosono H
152 - 160 Combinatorial studies of Zn-Al-O and Zn-Sn-O transparent conducting oxide thin films
Perkins JD, del Cueto JA, Alleman JL, Warmsingh C, Keyes BM, Gedvilas LM, Parilla PA, To B, Readey DW, Ginley DS
161 - 165 A new thin-film phosphor using multicomponent oxides composed of Y2O3 and GeO2
Minami T, Yamazaki M, Miyata T, Kobayashi Y, Shirai T
166 - 170 Influence of atomic hydrogen on transparent conducting oxides during hydrogenated amorphous and microcrystalline Si preparation by catalytic chemical vapor deposition
Masuda A, Imamori K, Matsumura H
VII - VII Proceedings of the 2(nd) International Symposium on Transport Oxide Thin Films for Electronics and Optics (TOEO-2) - Tokyo, Japan, November 8-9, 2001
Hosono H, Ichinose N, Shigesato Y