Thin Solid Films

Thin Solid Films, Vol.450, No.1 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (44 articles)

1 - 2	Proceedings of Symposium M on Optical and X-ray Metrology for Advanced Device Materials Characterization, of the E-MRS 2003 Spring Conference, Strasbourg, France, June 10-13, 2003 Murtagh M, Ricote J, Chateigner D, Schreiber J
3 - 13	Advances in the application of modulation spectroscopy to vertical cavity structures Hosea TJC
14 - 22	Photomodulated reflectance and transmittance: optical characterisation of novel semiconductor materials and device structures Misiewicz J, Sek G, Kudrawiec R, Sitarek P
23 - 28	Recent advances in characterization of ultra-thin films using specular X-ray reflectivity technique Banerjee S, Ferrari S, Chateigner D, Gibaud A
29 - 33	Elastic-strain tensor and inhomogeneous strain in thin films by X-ray diffraction Balzar D, Popa NC
34 - 41	Texture, residual stress and structural analysis of thin films using a combined X-ray analysis Lutterotti L, Chateigner D, Ferrari S, Ricote J
42 - 50	Generalized ellipsometry for materials characterization Jellison GE
51 - 59	Characterization of multilayered materials for optoelectronic components by high-resolution X-ray diffractometry and reflectometry: contribution of numerical treatments Durand O
60 - 65	Application of photoreflectance spectroscopy to optoelectronic materials and devices Long L, Schreiber J
66 - 70	Strain profiles in yttria stabilized zirconia epitaxial thin films determined by high-resolution X-ray diffraction Boulle A, Masson O, Guinebretiere R, Dauger A
71 - 74	Three beam photoreflectance as a powerful method to investigate semiconductor heterostructures Kudrawiec R, Sek G, Sitarek P, Ryczko K, Misiewicz J, Wang T, Forchel A
75 - 78	UV photoreflectance for wide band gap nitride characterization Bru-Chevallier C, Fanget S, Guillot G, Ruffenach S, Briot O
79 - 83	The metrology of a miniature FT spectrometer MOEMS device using white light scanning interference microscopy Montgomery PC, Montaner D, Manzardo O, Flury M, Herzig HP
84 - 89	In-line monitoring of advanced microelectronic processes using combined X-ray techniques Wyon C, Delille D, Gonchond JP, Heider F, Kwakman L, Marthon S, Mazor I, Michallet A, Muyard D, Perino-Gallice L, Royer JC, Tokar A
90 - 96	New developments in X-ray fluorescence metrology van der Haar LM, Sommer C, Stoop MGM
97 - 100	Structural and optical properties of both pure poly (3-octylthiophene) (P3OT) and P3OT/fullerene films Erb T, Raleva S, Zhokhavets U, Gobsch G, Stuhn B, Spode M, Ambacher O
101 - 104	Optical characterization of indium-tin-oxynitride fabricated by RF-sputtering Aperathitis E, Modreanu M, Bender M, Cimalla V, Ecke G, Androulidaki M, Pelekanos N
105 - 110	Optical properties of silicon thin films related to LPCVD growth condition Modreanu M, Gartner M, Cobianu C, O'Looney B, Murphy F
111 - 113	Kinetics of interfacial layer formation during deposition of HfO2 on silicon Essary C, Howard JM, Craciun V, Craciun D, Singh RK
114 - 119	Automated metrology system including VUV spectroscopic ellipsometry and X-ray reflectometry for 300 mm silicon microelectronics Boher R, Evrard R, Condat O, Dos Reis C, Defranoux C, Bellandi E
120 - 123	Metrology issues in thin ONO stacks measurements by spectroscopic ellipsometry and X-ray reflectivity Bellandi E, Elbaz A, Spadoni S, Piagge R, Coccorese C, Pavia G, Ferrari S, Banerjee S, Alessandri M
124 - 127	X-Ray reflectivity and spectroscopic ellipsometry as metrology tools for the characterization of interfacial layers in high-kappa materials Ferrari S, Modreanu M, Scarel G, Fanciulli M
128 - 133	Application of the X-ray combined analysis to the study of lead titanate based ferroelectric thin films Ricote J, Chateigner D, Morales M, Calzada ML, Wiemer C
134 - 137	Combining grazing incidence X-ray diffraction and X-ray reflectivity for the evaluation of the structural evolution of HfO2 thin films with annealing Wiemer C, Ferrari S, Fanciulli M, Pavia G, Lutterotti L
138 - 142	Application of X-ray scattering methods to the analysis of Si-based heterostructures Woitok JF
143 - 147	Residual stress analysis of thin films and coatings through XRD2 experiments Gelfi M, Bontempi E, Roberti R, Armelao L, Depero LE
148 - 150	Photoreflectance spectroscopy study of vertical cavity surface emitting laser structures Murtagh ME, Guenebaut V, Ward S, Nee D, Kelly PV, O'Looney B, Murphy F, Modreanu M, Westwater S, Blunt R, Bland SW
151 - 154	Photoreflectance spectroscopy for the study of GaAsSb/InP heterojunction bipolar transistors Bru-Chevallier C, Chouaib H, Arcamone J, Benyattou T, Lahreche H, Bove P
155 - 158	Photoreflectance studies of (A1)Ga- and N-face AlGaN/GaN heterostructures Buchheim C, Winzer AT, Goldhahn R, Gobsch G, Ambacher O, Link A, Eickhoff M, Stutzmann M
159 - 162	Characterization of InP and GaAs films by contactless transient photoconductivity measurements Kunst M, Neitzert HC, Sanders A
163 - 166	Temperature-dependent electric fields in GaN Schottky diodes studied by electroreflectance Shokhovets S, Fuhrmann D, Goldhahn R, Gobsch G, Ambacher O, Hermann M, Eickhoff M
167 - 172	Theoretical concept of strain effect on reflectance anisotropy and photoreflectance spectra of semiconductor multilayer system Long L, Schreiber J
173 - 177	Infrared spectroscopic ellipsometry applied to the characterization of nano-structures of silicon IC manufacturing Boher P, Bucchia M, Guillotin C, Defranoux C
178 - 182	Controllable Fabry-Perot interferometer based on dynamic volume holograms Petrov VM, Lichtenberg S, Chamrai AV, Petter J, Tschudi T
183 - 186	A XRD study of Co/Au multilayers using a laboratory microdiffractometer Bontempi E, Depero LE
187 - 190	Buried interface characterization by interference microscopy Benatmane A, Montgomery PC
191 - 194	Advanced cure monitoring by optoelectronic multifunction sensing system Giordano M, Laudati A, Russo M, Nasser J, Persiano GV, Cusano A
195 - 198	Giant LO oscillation in the Zn1-xBex(Se,Te) multi-phonons percolative alloys Tite T, Pages O, Ajjoun M, Laurenti JP, Gorochov O, Tournie E, Maksimov O, Tamargo MC
199 - 202	The dielectric function of a GaAs/AlGaAs single quantum well: calculation and comparison with experiment Herasimovich A, Shokhovets S, Goldhahn R, Gobsch G
203 - 206	Photoelectrical measurements of the local value of the contact potential difference in the metal-insulator semiconductor (MIS) structures Kudla A, Przewlocki HM, Borowicz L, Brzezinska D, Rzodkiewicz W
207 - 210	A methodology to reduce error sources in the determination of thin film chemical composition by EDAX Ares JR, Pascual A, Ferrer IJ, Sanchez C
211 - 215	X-ray characterisation of chemical solution deposited PbTiO3 films with high Ca doping Calzada ML, Bretos I, Jimenez R, Ricote J, Mendiola J
216 - 221	Anisotropic crystallite size analysis of textured nanocrystalline silicon thin films probed by X-ray diffraction Morales M, Leconte Y, Rizk R, Chateigner D
222 - 225	Application of modulation spectroscopy for determination of recombination center parameters Makhniy VP, Slyotov MM, Stets E, Tkachenko IV, Gorley VV, Horley PP