Thin Solid Films

Thin Solid Films, Vol.461, No.1 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (44 articles)

1 - 1	Proceedings of Symposium on Semiconducting Silicides: Science and Future Technology of the 8th IUMRS International Conference on Advanced Materials, Yokohama, Japan, 8-13 October 2003 - Preface Maeda YY, Homewood KP, Suemasu T, Sadoh T, Udono H, Yamaguchi K
2 - 6	Environmental impacts of microchip manufacture Williams ED
7 - 12	Environmental safety issues for semiconductors - (research on scarce materials recycling) Izumi S
13 - 16	Effect of substrate temperature and deposited thickness on the formation of iron silicide prepared by ion beam sputter deposition Yamaguchi K, Haraguchi M, Katsumata T, Shimura K, Yamamoto H, Hojou K
17 - 21	Effect of target compositions on the crystallinity of beta-FeSi2 prepared by ion beam sputter deposition method Yamaguchi K, Heya A, Shimura K, Katsumata T, Yamamoto H, Hojou K
22 - 27	The role of sputter etching and annealing processes on the formation of beta-FeSi2 thin films Shimura K, Katsumata T, Yamaguchi K, Yamamoto H, Hojou K
28 - 33	Morphological modification of beta-FeSi2 on Si(111) by high temperature growth and post-thermal annealing Yamamoto A, Tanaka S, Matsubayashi D, Makiuchi S, Tatsuoka H, Matsuyama T, Tanaka M, Liu ZQ, Kuwabara H
34 - 39	Formation of thin beta-FeSi2 template layer for the epitaxial growth of thick film on Si(111) substrate Kuroda R, Liu ZX, Fukuzawa Y, Suzuki Y, Osamura M, Wang S, Otogawa N, Ootsuka T, Mise T, Hoshino Y, Nakayama Y, Tanoue H, Makita Y
40 - 43	Preparation of beta-FeSi2 thin film by metal organic chemical vapor deposition using iron-carbonyl and mono-silane Akiyama K, Ohya S, Funakubo H
44 - 47	Fonnation of epitaxial beta-FeSi2 nanodots array on strained Si/Si0.8Ge0.2(001) substrate Chen HC, Liao KF, Lee SW, Cheng SL, Chen LJ
48 - 56	High-quality carbon-doped beta-type FeSi2 films synthesized by ion implantation Dong C, Li X, Nie D, Xu L, Zhang Z
57 - 62	Microstructures of semiconducting silicide layers grown by novel growth techniques Tatsuoka H, Takagi N, Okaya S, Sato Y, Inaba T, Ohishi T, Yamamoto A, Matsuyama T, Kuwabara H
63 - 67	Growth of beta-FeSi2 layers deposited from a molten salt Ohishi T, Mizuyoshi Y, Matsuyama T, Tatsuoka H, Kuwabara H
68 - 71	Solid-phase crystallization of beta-FeSi2 thin film in Fe/Si structure Murakami Y, Kenjo A, Sadoh T, Yoshitake T, Miyao M
72 - 76	Semiconducting amorphous FeSi2 layers synthesized by co-sputter deposition Milosavljevic M, Shao G, Gwilliam RM, Gao Y, Lourenco MA, Valizadeh R, Colligon JS, Homewood KP
77 - 80	Formation of SiGe/beta-FeSi2 superstructures from amorphous Si/FeSiGe layers Sadoh T, Owatari M, Murakami Y, Kenjo A, Yoshitake T, Itakura M, Enokida I, Miya M
81 - 85	Solid phase reactions between Fe thin films and Si-Ge layers on Si Yu CH, Chueh YL, Lee SW, Cheng SL, Chen LJ, Chou LJ, Cheng LW
86 - 89	Bulk crystal growthOf Mg2Si by the vertical Bridgman method Yoshinaga M, Iida T, Noda M, Endo I, Takanashi Y
90 - 93	Crystal growth of orthorhombic BaSi2 by the vertical Bridgman method Kishino S, Iida T, Kuji T, Takanashi Y
94 - 98	Production of semiconductor grade high-purity iron Uchikoshi M, Imaizumi J, Shibuya H, Kekesi T, Mimura K, Isshiki M
99 - 105	Nanoscopic observation of structural and compositional changes for beta-FeSi2 thin film formation processes Yamamoto H, Yamaguchi K, Hojou K
106 - 109	Thermal expansion of beta-FeSi2 at low temperatures Terai Y, Ishibashi H, Maeda Y, Udono H
110 - 115	Structural and electrical properties of beta-FeSi2 single crystals grown using Sb solvent Kannou H, Saito Y, Kuramoto M, Takeyama T, Nakamura T, Matsuyama T, Udono H, Maeda Y, Tanaka M, Liu ZQ, Tatsuoka H, Kuwabara H
116 - 119	Surface analysis of beta-FeSi2 layer epitaxially grown on Si(100) Shoji F, Shimoji H, Makihara Y, Naitoh M
120 - 125	Transmission electron microscope analysis of epitaxial growth processes in the sputtered beta-FeSi2/Si(001) films Itakura M, Norizumi D, Ohta T, Tomokiyo Y, Kuwano N
126 - 130	Auto-correlation function analysis of phase formation in iron ion-implanted amorphous silicon layers Yang TH, Chueh YL, Chen HC, Chen LJ, Chou LJ
131 - 135	Formation of iron silicide on Si(001) studied by high resolution Rutherford backscattering spectroscopy Kinoshita K, Imaizumi R, Nakajima K, Suzuki M, Kimura K
136 - 140	Rod-like beta-FeSi2 phase grown on Si(111) substrate Han M, Tanaka M, Takeguchi M, Furuya K
141 - 147	Electronic properties of semiconducting silicides: fundamentals and recent predictions Ivanenko LI, Shaposhnikov VL, Filonov AB, Krivosheeva AV, Borisenka VE, Migas DB, Miglio L, Behr G, Schumann J
148 - 151	Magnetic properties of beta-FeSi2 single crystals Arushanov E, Behr G, Schumann J
152 - 159	The potential of higher manganese silicide as an optoelectronic thin film material Mahan JE
160 - 164	Photoluminescence properties of ion beam synthesized beta-FeSi2 Maeda Y, Terai Y, Itakura M, Kuwano N
165 - 170	Raman spectra for beta-FeSi2 bulk crystals Maeda Y, Udono H, Terai Y
171 - 173	Reflection and absorption spectra of beta-FeSi2 under pressure Mori Y, Sumida Y, Takarabe K, Suemasu T, Hasegawa F, Udono H, Kikuma I
174 - 178	Characterization of a beta-FeSi2 p-n junction formed by the PECS method Uchitomi N, Nishino N, Mori A, Takeda M, Jinbo Y
179 - 181	Anisotropic Seebeck coefficient in beta-FeSi2 single crystal Takeda M, Kuramitsu M, Yoshio M
182 - 187	Optical properties of beta-FeSi2 single crystals grown from solutions Udono H, Kikuma I, Okuno T, Masumoto Y, Tajima H, Komuro S
188 - 192	Electrical properties of p-type beta-FeSi2 single crystals grown from Ga and Zn solvents Udono H, Kikuma I
193 - 197	On the appearance of induced magnetic moment of beta-FeSi2 by doping halogen or oxygen atoms Kondo S, Yamada K
198 - 201	Impurity conduction in ion beam synthesized beta-FeSi2/Si Murakami Y, Tsukahara Y, Kenjo A, Sadoh T, Maeda Y, Miyao M
202 - 208	Important research targets to be explored for beta-FeSi2 device making Makita Y, Nakayama Y, Fukuzawa Y, Wang SN, Otogawa N, Suzuki Y, Liu ZX, Osamura M, Ootsuka T, Mise T, Tanoue H
209 - 218	Epitaxial growth of semiconducting beta-FeSi2 and its application to light-emitting diodes Suemasu T, Takakura K, Li C, Ozawa Y, Kumagai Y, Hasegawa F
219 - 222	Experimental and theoretical study of the electroluminescence temperature dependence of iron disilicide light-emitting devices Lourenco MA, Milosavljevic M, Gwilliam RM, Shao G, Homewood KP
223 - 226	Semiconductor-metal phase transition of iron disilicide by laser annealing and its application to form device electrodes Otogawa N, Wang SN, Kihara S, Liu ZX, Fukuzawa Y, Suzuki Y, Osamura M, Ootsuka T, Mise T, Miyake K, Nakayama Y, Tanoue H, Makita Y