Thin Solid Films

Thin Solid Films, Vol.262, No.1-2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (29 articles)

1 - 6	Metal-Organic Chemical-Vapor-Deposition of Copper Using Hydrated Copper Formate as a New Precursor Mouche MJ, Mermet JL, Romand M, Charbonnier M
7 - 11	Selective Chemical-Vapor-Deposition on Excimer-Laser-Patterned Polytetrafluoroethylene from Hexafluoroacetylacetonate Copper(I) Vinyltrimethylsilane Perry WL, Jain A, Kodas TT, Hampdensmith MJ
12 - 19	Carrier-Gas Effects on Characteristics of Copper Chemical-Vapor-Deposition Using Hexafluoro-Acetylacetonate-Copper(1) Trimethylvinylsilane Awaya N, Arita Y
20 - 30	In-Situ Mass-Spectral and Ir Studies of the Role of Auxiliary Reagents in the Enhancement of Copper Growth in the Chemical-Vapor-Deposition of Cu(II) Beta-Diketonate Precursors Kaloyeros AE, Zheng B, Lou IS, Lau J, Hellgeth JW
31 - 38	Reactor Transport Effects in Copper APCVD Wang J, Little RB, Lai WG, Griffin GL
39 - 45	Hydrogen-Atom Assisted CVD of Copper at Low-Temperatures and in-Situ Gas-Phase Spectroscopy Studies Lee WW, Locke PS
46 - 51	Chemical Additives for Improved Copper Chemical-Vapor-Deposition Processing Norman JA, Roberts DA, Hochberg AK, Smith P, Petersen GA, Parmeter JE, Apblett CA, Omstead TR
52 - 59	Selective Chemical-Vapor-Deposition of Copper Using (Hfac) Copper(I) Vinyltrimethylsilane in the Absence and Presence of Water Jain A, Gelatos AV, Kodas TT, Hampdensmith MJ, Marsh R, Mogab CJ
60 - 66	CVD of Copper Using Copper(I) and Copper(II) Beta-Diketonates Naik MB, Gill WN, Wentorf RH, Reeves RR
67 - 72	Lower Temperature Plasma-Etching of Cu Using Ir Light Irradiation Ohshita Y, Hosoi N
73 - 83	Photolithographic Metallization of Fluorinated Polymers Rye RR, Howard AJ, Ricco AJ
84 - 92	Copper Interconnection Integration and Reliability Hu CK, Luther B, Kaufman FB, Hummel J, Uzoh C, Pearson DJ
93 - 103	Electroless Copper Deposition for ULSI Shachamdiamand Y, Dubin V, Angyal M
104 - 119	Encapsulated Copper Interconnection Devices Using Sidewall Barriers Gardner DS, Onuki J, Kudoo K, Misawa Y, Vu QT
120 - 123	Selective CVD-W for Capping Damascene Cu Lines Colgan EG
124 - 128	Thermal-Stability of Copper Interconnects Fabricated by Dry-Etching Process Igarashi Y, Yamanobe T, Ito T
129 - 134	In-Situ Ultra-High-Vacuum Studies of Electromigration in Copper-Films Jo BH, Vook RW
135 - 141	Electromigration in Copper Conductors Lloyd JR, Clement JJ
142 - 153	Thermal Strain and Stress in Copper Thin-Films Vinci RP, Zielinski EM, Bravman JC
154 - 167	Enhanced Adhesion of Copper to Dielectrics via Titanium and Chromium Additions and Sacrificial Reactions Russell SW, Rafalski SA, Spreitzer RL, Li J, Moinpour M, Moghadam F, Alford TL
168 - 176	Diffusion of Copper Through Dielectric Films Under Bias Temperature Stress Raghavan G, Chiang C, Anders PB, Tzeng SM, Villasol R, Bai G, Bohr M, Fraser DB
177 - 186	Thermal-Stability of on-Chip Copper Interconnect Structures Gutmann RJ, Chow TP, Kaloyeros AE, Lanford WA, Muraka SP
187 - 198	Room-Temperature Oxidation of Silicon in the Presence of Cu3Si Liu CS, Chen LJ
199 - 208	Passivation of Cu via Refractory-Metal Nitridation in an Ammonia Ambient Adams D, Alford TL, Theodore ND, Russell SW, Spreitzer RL, Mayer JW
209 - 217	In-Situ Measurement of Gas-Phase Reactions During the Metal-Organic Chemical-Vapor-Deposition of Copper Using Fourier-Transform Infrared-Spectroscopy Hanaoka K, Tachibana K, Ohnishi H
218 - 223	W-B-N Diffusion-Barriers for Si/Cu Metallizations Reid JS, Liu RY, Smith PM, Ruiz RP, Nicolet MA
224 - 233	Cu-Metal Interfacial Interactions During Metal-Organic Chemical-Vapor-Deposition Nuesca GM, Kelber JA
234 - 241	Low-Temperature Passivation of Copper by Doping with Al or Mg Lanford WA, Ding PJ, Wang W, Hymes S, Muraka SP
VII - VIII	Copper-Based Metallization and Interconnects for Ultra-Large-Scale Integration Applications Alford TL, Li J, Mayer JW, Wang SQ