| 1 - 7 |
Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices
Hbib H, Bonnaud O, Gauneau M, Hamedi L, Marchand R, Quemerais A |
| 8 - 18 |
Phase formation process of IrxSi1-x thin films structure and electrical properties
Kurt R, Pitschke W, Heinrich A, Schumann J, Thomas J, Wetzig K, Burkov A |
| 19 - 23 |
Ozone-enhanced molecular beam deposition of nickel oxide (NiO) for sensor applications
Neubecker A, Pompl T, Doll T, Hansch W, Eisele I |
| 24 - 28 |
Temperature-dependent surface potentials of fluorinated alkanethiolate self-assembled monolayers
Robinson GN, Kebabian PL, Freedman A, DePalma V |
| 29 - 33 |
Surface characterization of titanium oxide films synthesized by ion beam enhanced deposition
Zhang F, Jin S, Mao YJ, Zheng ZH, Chen Y, Liu XH |
| 34 - 38 |
Comparative study of the elastic properties of polycrystalline aluminum nitride films on silicon by Brillouin light scattering
Carlotti G, Gubbiotti G, Hickernell FS, Liaw HM, Socino G |
| 39 - 46 |
Effects of argon and oxygen addition to the CH4-H-2 feed gas on diamond synthesis by microwave plasma enhanced chemical vapor deposition
Han YS, Kim YK, Lee JY |
| 47 - 56 |
The effect of thermal annealing on aerosol-gel deposited SiO2 films : a FTIR deconvolution study
Primeau N, Vautey C, Langlet M |
| 57 - 62 |
Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films
Patil PS, Ennaoui EA, Lokhande CD, Muller M, Giersig M, Diesner K, Tributsch H |
| 63 - 66 |
Temperature-dependent Hall analysis of carbon-doped GaAs
Kim SI, Son CS, Chung SW, Park YK, Kim EE, Min SK |
| 67 - 74 |
Large-grain polycrystalline silicon thin films obtained by low-temperature stepwise annealing of hydrogenated amorphous silicon
Ruther R, Livingstone J, Dytlewski N |
| 75 - 80 |
Low-temperature growth and orientational control in RuO2 thin films by metal-organic chemical vapor deposition
Bai GR, Wang A, Foster CM, Vetrone J |
| 81 - 86 |
Epitaxial growth of Pd/Fe/Pd trilayers onto sapphire
Muller C, Muhlbauer H, Dumpich G |
| 87 - 93 |
Determination of the relative surface areas of PVD coatings by electrochemical impedance spectroscopy
Robyr C, Agarwal P, Mettraux P, Landolt D |
| 94 - 96 |
Magneto-transport in porous silicon
Mathur RG, Mehra RM, Mathur PC |
| 97 - 101 |
Preparation and characterisation of silver particulate films on softened polystyrene substrates
Rao KM, Pattabi M, Mayya KS, Sainkar SR, Sastry M |
| 102 - 107 |
Limited rotational diffusion caused by frictional interaction among purple membrane fragments in a highly concentrated purple membrane solution spread over a water surface
Sugiyama Y, Inoue T, Ikematsu M, Iseki M, Sekiguchi T |
| 108 - 114 |
Acoustic emission responses of plasma-sprayed alumina-3% titania deposits
Lin CK, Leigh SH, Berndt CC |
| 115 - 122 |
Influence of conventional furnace and rapid thermal annealing on the quality of polycrystalline beta-FeSi2 thin films grown from vapor-deposited Fe/Si multilayers
Tassis DH, Dimitriadis CA, Boultadakis S, Arvanitidis J, Ves S, Kokkou S, Logothetidis S, Valassiades O, Poulopoulos P, Flevaris NK |
| 123 - 131 |
Sputter deposition of ZnS : Mn/SrS : Ce multilayered thin film white phosphor
Ruffner JA, Tuenge RT, Sun SS, Grandon PD, Hlava PF |
| 132 - 137 |
Effect of thermal annealing on the structural and optical properties of CdTe (111) GaAs (100) heterostructures
Kim MD, Han MS, Kang TW, Kim TW |
| 138 - 147 |
Conformation and orientation analysis of modified polyglutamates in thin films by ATR infrared spectroscopy
Schmitt FJ, Muller M |
| 148 - 155 |
Characterization of polyacrylonitrile films grafted onto nickel by ellipsometry, atomic force microscopy and X-ray reflectivity
Calberg C, Mertens M, Jerome R, Arys X, Jonas AM, Legras R |
| 156 - 160 |
A study of the effects of annealing and outgassing on hydrogenated amorphous silicon
Jennings PJ, Cornish JCL, Clare BW, Hefter GT, Santjojo DJ |
| 161 - 166 |
Effect of Nb, Cr, Sn additions on gas sensing properties of TiO2 thin films
Zakrzewska K, Radecka M, Rekas M |
| 167 - 170 |
Characterization of fluorine-doped silicon dioxide film by Raman spectroscopy
Yoshikawa M, Iwagami K, Morita N, Matsunobe T, Ishida H |
| 171 - 176 |
Morphological changes induced by thermal anneals in NiFe/Ag multilayers; their relation to the resistive and magnetoresistive properties
Rozenberg E, Pelleg J, Dariel MP, Mogilaynski D, Ezersky V, Sade G |
| 177 - 183 |
Analysis of Au-, Al-, and Sn/Si semiconductor devices with thin oxide layer by photocurrent measurements
Hamdi WI |
| 184 - 193 |
Epitaxial growth of titanium oxide thin films on MgO(100) single-crystal substrates by reactive deposition methods
Imai F, Kunimori K, Manabe T, Kumagai T, Nozoye H |
| 194 - 198 |
Change of light holes valence band in lead-tin telluride films by isovalent substitution of chalcogen atoms
Zimin SP, Kuznetsov VS, Prokaznikov AV |
| 199 - 202 |
Effects of p(O-2) and p(CO2) on epitaxial growth of BaTiO3 thin films on MgO(100) substrates by using metal organic acid salts
Kim S, Manabe T, Yamaguchi I, Kumagai T, Mizuta S |
| 203 - 207 |
Nondestructive acoustic microcharacterisation of heteropolysiloxane thin films
Doghmane A, Hadjoub Z, Hadjoub F |
| 208 - 216 |
Stability and behavior of poly-1-naphthol films towards charge transfer reactions
El-Rahman HAA |
| 217 - 221 |
Electrochemical behaviour of molybdenum coated with flame CVD polycrystalline diamond film
Garcia I, Conde A, de Damborenea JJ, Vazquez AJ |
| 222 - 227 |
Electrical resistivity, structure and composition of dc sputtered WNx films
Boukhris L, Poitevin JM |
| 228 - 233 |
Preparation of AlVO4-films for sensor application via a sol-gel/spin-coating technique
Leyer B, Schmelz H, Gobel H, Meixner H, Scherg T, Knozinger H |
| 234 - 237 |
Residual stress in silicon films deposited by LPCVD from disilane
Temple-Boyer P, Scheid E, Faugere G, Rousset B |
| 238 - 243 |
Preparation of nanocrystalline SnO2 thin film coated Al2O3 particles by fluidized chemical vapor deposition
Li CZ, Hua B |
| 244 - 250 |
Generation of boride layers on steel and nickel alloys by plasma activation of boron trifluoride
Hunger HJ, Lobig G |
| 251 - 259 |
Corrosion behavior and microstructure of titanium implanted with alpha and beta stabilizing elements
Pham MT, Zyganow I, Matz W, Reuther H, Oswald S, Richter E, Wieser E |
| 260 - 264 |
The dependence of hardness on the density of amorphous alumina thin films by PECVD
Wang HL, Lin CH, Hon MH |
| 265 - 273 |
Optical properties of silver, gold and aluminum ultra-thin granular films evaporated on oxidized aluminum
Monard H, Sabary F |
| 274 - 278 |
Luminescence properties of the Langmuir-Blodgett film of terbium(III) stearoylanthranilate
Zhang HJ, Li B, Ma JF, Ni JZ |
| 279 - 288 |
Charge conduction process and photovoltaic effects in thiazole yellow (TY) thin film based Schottky devices
Roy MS, Sharma GD, Gupta SK |
| 289 - 295 |
A spin wave resonance study on reentrant Au77Fe23 films
Ozdemir M, Yalcin N, Aktas B |
| 296 - 302 |
Porphyrin LB film as a catalyst for alkene epoxidation
Abatti D, Zaniquelli MED, Iamamoto Y, Idemori YM |
| 303 - 309 |
Structures and vapor-sorption characteristics of sputtered polychlorotrifluoroethylene films treated by hydrogen-plasma
Sugimoto I, Nakamura M, Kuwano H, Shimada R |
| 310 - 316 |
Photoconductors based on ZnxCd1-xS and CdSe1-ySy thin films, fabricated with multilayer structure
Torres J, Gordillo G |
| 317 - 321 |
Fabrication of excimer laser annealed poly-Si thin film transistor by using an elevated temperature ion shower doping
Park SC, Jeon DY |
| 322 - 326 |
The crystalline properties of nitrogen doped hydrogenated microcrystalline silicon thin films
Ehara T |
| 327 - 331 |
Influence of annealing on the ferroelectric properties of Pt/Pb(Zr,Ti)O-3/Pt thin film capacitors
Lee EG, Park JS, Lee JK, Lee JG |
