1 - 5 |
Room-temperature deposition of indium tin oxide thin films with plasma ion-assisted evaporation Laux S, Kaiser N, Zoller A, Gotzelmann R, Lauth H, Bernitzki H |
6 - 12 |
Reactive pulsed laser deposition of iridium oxide thin films El Khakani MA, Chaker M |
13 - 18 |
Studies with Ni/Ti multilayer films using X-ray photoelectron spectroscopy and neutron reflectometry: microscopic characterization of structure and chemical composition Vedpathak M, Basu S, Gokhale S, Kulkarni SK |
19 - 26 |
Model and computer simulation results of defect transformation and decomposition of SiNx : H films during high temperature treatment Gadiyak GV, Gadiyak VG, Kosinova ML, Salman EG |
27 - 31 |
Growth and characterization of diamond-like carbon films by pulsed laser deposition and hydrogen beam treatment Stavrides A, Ren J, Ho M, Cheon J, Zink J, Gillis HP, Williams RS |
32 - 36 |
Epitaxial growth of 3C-SiC by low-pressure chemical vapor deposition on a surface-structure-controlled molecular beam epitaxy layer Uchida M, Kitabatake M |
37 - 42 |
Accurate control of thin film CdS growth process by adjusting the chemical bath deposition parameters Guillen C, Martinez MA, Herrero J |
43 - 48 |
Fluence dependence of hydroxyapatite laser ablation plumes Serra P, Morenza JL |
49 - 53 |
Capacitance-voltage, current-voltage, and thermal stability of copper alloyed with aluminium or magnesium de Felipe TS, Murarka SP, Bedell S, Lanford WA |
54 - 58 |
Significance of substrate temperature on the properties of flash evaporated CuIn0.75Ga0.25Se2 thin films Ahmed E, Tomlinson RD, Pilkington RD, Hill AE, Ahmed W, Ali N, Hassan IU |
59 - 63 |
Formation of titanium nitride films by energetic cluster impact deposition Yu GQ, Chen JS, Shi Y, Pan HC, Zhu DZ, Xu HJ, Zheng ZH |
64 - 69 |
Preparation and optical properties of a SiO2 film containing In0.2Ga0.8As nanocrystals by radio-frequency magnetron co-sputtering Shi JZ, Zhu KG, Zhang LD |
70 - 79 |
Second-oxidation properties of thin polysilicon films grown by LPCVD and heavily in situ boron-doped Boukezzata M, Birouk B, Bielle-Daspet D |
80 - 84 |
Synthesis of silicon carbide thin films by ion beam sputtering Valentini A, Convertino A, Alvisi M, Cingolani R, Ligonzo T, Lamendola R, Tapfer L |
85 - 89 |
Characterization of epitaxially grown Cu/Nb multilayer on alpha-Al2O3 with RBS/channeling technique Yamamoto S, Naramoto H, Tuchiya B, Narumi K, Aoki Y |
90 - 96 |
Raman study of the amorphous SiNi alloy Belu-Marian A, Manaila R, Popescu R, Brehm G, Marian DT |
97 - 105 |
Measurements of residual stresses in thin films using micro-rotating-structures Zhang X, Zhang TY, Zohar Y |
106 - 111 |
Raman scattering and high resolution electron microscopy studies of metal-organic chemical vapor deposition-tungsten disulfide thin films Chung JW, Dai ZR, Adib K, Ohuchi FS |
112 - 116 |
A study of electrochemical copolymerization of 3-butylthiophene and 3-bromothiophene Zhou L, Li YQ, Xue G |
117 - 121 |
Effect of substrate heating on elimination of pinholes in sputtering deposited SiO2 films on LiNbO3 single crystal substrates Nagata H, Fujino T, Mitsugi N, Tamai M |
122 - 126 |
Modeling of reactively sputtered TiAlN films Lii DF, Huang JL, Shew BY |
127 - 129 |
Polycrystalline silicon thin films grown by dc arc discharge ion plating Yoshida M, Saida T, Okada S, Akamatsu M, Kondo K |
130 - 133 |
Composition dependence of surface morphology of ultrathin a-SiGe : H alloys studying by atomic force microscopy Xu J, Chen KJ, Feng D, Miyazaki S, Hirose M |
134 - 137 |
Ion irradiation effect on single-crystalline Cu/Nb and Nb/Cu/Nb layers on sapphire Tsuchiya B, Yamamoto S, Narumi K, Aoki Y, Naramoto H, Morita K |
138 - 141 |
Heat treatment in high pressure H2O vapor used for improvement of Si-O bonding network near SiO2/Si interface Sameshima T, Sakamoto K, Satoh M |
142 - 145 |
Extraction of interface state density of Pt/p-strained-Si Schottky diode Chattopadhyay S, Bera LK, Ray SK, Bose PK, Maiti CK |
146 - 152 |
Formation of Cr-O and Cr-N-O films serving as Cu oxidation resistant layers and their N-2 pre-sintering effect Chuang JC, Chen MC |
153 - 159 |
The coated surface hardness: a kinematic model Fernandes JV, Menezes LF, Trindade AC |
160 - 167 |
Modification of the Preston equation for the chemical-mechanical polishing of copper Luo Q, Ramarajan S, Babu SV |
168 - 173 |
Effect of white light irradiation on the systems ITO/poly(4,4 '-dipentoxy-2,2 ' bithiophene)/aluminium and ITO/poly(3-butylthiophene)/aluminium Camaioni N, Casalbore-Miceli G, Beggiato G, Geri A, Catellani M |
174 - 177 |
Sputter deposition of high resistivity boron carbide Ahmad AA, Ianno NJ, Hwang SD, Dowben PA |
178 - 185 |
Coupled second-harmonic generation, surface plasmon resonance and AC impedance studies of full and partial monolayers in (Au,Ag)-alkanethiolate electrolyte systems Zhang Y, Zhang Y, Terrill RH, Bohn PW |
186 - 191 |
Effect of curing temperature on the mechanical properties of hydrogen silsesquioxane thin films Liou HC, Pretzer J |
192 - 196 |
Effect of white light irradiation on the systems Al/poly(4, 4-dipentoxy-2,2 '-bithiophene)/ITO and Al/SiO/poly(4,4 '-dipentoxy-2,2 '-bithiophene)/ITO Camaioni N, Casalbore-Miceli G |
197 - 202 |
Deposition and characterisation of Langmuir-Blodgett films of an azo-modified polypeptide : azobenzene-containing poly-L-lysine Tedeschi C, Fontana MP, Pieroni O, Dei L, Wilde J, Pearson C, Petty MC, Tanner BK |
203 - 208 |
Electrochemistry of polyaniline Langmuir-Blodgett films Dabke RB, Dhanabalan A, Major S, Talwar SS, Lal R, Contractor AQ |
209 - 213 |
Evaporated thin films of tetrathiafulvalene derivatives and their charge-transfer complexes Kilitziraki M, Moore AJ, Petty MC, Bryce MR |
214 - 219 |
Antibacterial effects of Ag-HAp thin films on alumina substrates Feng QL, Kim TN, Wu J, Park ES, Kim JO, Lim DY, Cui FZ |
220 - 224 |
Effect of pyrolysis temperature on the characteristics of PZT films deposited by the sol-gel method Law CW, Tong KY, Li JH, Li K |
225 - 228 |
The role of as-grown defects and electrode materials on polarization orientation of Pb(Zr0.52Ti0.48)O-3 on YBa2Cu3O7-x Zomorrodian AR, Wu NJ, Lin H, Ignatiev A |
229 - 236 |
Growth rate and microstructure of copper thin films deposited with metal-organic chemical vapor deposition from hexafluoroacetylacetonate copper(I) allyltrimethylsilane Son JH, Park MY, Rhee SW |
237 - 244 |
Evaluation of amine-functionalized coatings for liquid-phase QCM applications Chance JJ, Purdy WC |
245 - 248 |
Preparation of transparent CeO2-TiO2 coatings for electrochromic devices Avellaneda CO, Pawlicka A |
249 - 252 |
Effects of high-temperature annealing on the structure of reactive sputtering a-SiC : H films Wang YY, Wang HY, Ma GB |
253 - 257 |
Spectroscopic ellipsometry on silicon-oxide films on silicon Jungk G, Grabolla T |
258 - 265 |
Nanocrystalline gold in Au-doped thin C-60 films Devenyi A, Manaila R, Belu-Marian A, Macovei D, Manciu M, Popescu EM, Tanase M, Fratiloiu D, Mihai ND, Barna PB, Labar J, Safran G, Kovacs A, Braun T |
266 - 269 |
Excitation energy dependence of photoluminescence in nanocrystalline silicon deposited by remote plasma chemical vapor deposition Choi SH, Won SH, Jang J |
270 - 278 |
Potential of Sb2Se3 films for photo-thermal phase change optical storage Arun P, Vedeshwar AG |
279 - 283 |
A new formula on the thickness of films deposited by planar and cylindrical magnetron sputtering Meng XQ, Fan XJ, Guo HX |
284 - 291 |
Epitaxial growth of II-VI compound semiconductors by atomic layer epitaxy Hsu CT |
292 - 298 |
Conditioning effects on RTP (Pb,Ca)TiO3 thin films Jimenez R, Calzada ML, Mendiola J |
299 - 302 |
Pulsed laser deposited crystalline ultrathin indium tin oxide films and their conduction mechanisms Kwok HS, Sun XW, Kim DH |