Thin Solid Films

Thin Solid Films, Vol.367, No.1-2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (50 articles)

1 - 2	Proceedings from the Third International Workshop MBE-GPT, May 23-28 1999, Warsaw, Poland - Preface Herman MA
3 - 5	Fundamental growth processes in the molecular beam epitaxy of III-V compounds - an historical perspective Joyce BA
6 - 12	Selective area MBE of GaAs, AlAs and their alloys by periodic supply epitaxy Nishinaga T, Bacchin G
13 - 24	Molecular layer epitaxy Nishizawa J, Kurabayashi T
25 - 27	Laser-focused atomic deposition - nanofabrication via atom optics McClelland JJ, Celotta RJ
28 - 31	A simple solid-on-solid model of epitaxial thin films growth: inhomogeneous multilayered sandwiches Malarz K, Maksymowicz AZ
32 - 39	Uniform III-V semiconductor quantum wire and quantum dot arrays by natural self-faceting on patterned substrates Ploog KH, Notzel R
40 - 47	Quantum dots formed by ultrathin insertions in wide-gap matrices Ledentsov NN, Krestnikov IL, Strassburg M, Engelhardt R, Rodt S, Heitz R, Pohl UW, Hoffmann A, Bimberg D, Sakharov AV, Lundin WV, Usikov AS, Alferov ZI, Litvinov D, Rosenauer A, Gerthsen D
48 - 57	Equilibrium shape of steps and islands on polar CdTe(001) surface: application to the preparation of self organized templates for growth of nanostructures Martrou D, Magnea N
58 - 67	MBE growth and applications of silicon interface control layers Hasegawa H
68 - 74	Formation and properties of self-organized II-VI quantum islands Kurtz E, Shen J, Schmidt M, Grun M, Hong SK, Litvinov D, Gerthsen D, Oka T, Yao T, Klingshirn C
75 - 84	Molecular beam epitaxy of silicon-germanium nanostructures Pchelyakov OP, Bolkhovityanova YB, Dvurechenskii AV, Nikiforov AI, Yakimov AI, Voigtlander B
85 - 88	InAs quantum dots embedded in silicon Hansen L, Bensing F, Waag A
89 - 92	Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures Horvath ZJ, Dozsa L, Van Tuyen V, Podor B, Nemcsics A, Frigeri P, Gombia E, Mosca R, Franchi S
93 - 96	Single-electron charging of self assembled quantum dots Szafran B, Adamowski J, Bednarek S
97 - 100	MBE-grown gate-controlled quantum-dot nanostructure and its current-voltage characteristics Bednarek S, Szafran B, Adamowski J
101 - 111	MBE growth and properties of supersaturated, carbon-containing silicon/germanium alloys on Si(001) Osten HJ
112 - 119	MBE-growth peculiarities of fluoride (CdF2-CaF2) thin film structures Sokolov NS, Suturin SM
120 - 125	Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density Gaiduk PI, Larsen AN, Hansen JL
126 - 133	Auger electron spectroscopy in the investigation of ultrathin films in molecular beam epitaxy Mroz A, Mroz A
134 - 141	Structure and electronic properties of ionic nano-layers MBE-grown on III-V semiconductors Szymonski M, Korecki P, Kolodziej J, Czuba P, Piatkowski P
142 - 148	UHV-REM study of gold adsorption on the Si(111) surface Latyshev AV, Nasimov DA, Savenko VN, Aseev AL
149 - 158	Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy Xue QK, Xue QZ, Kuwano S, Sakurai T, Ohno T, Tsong IST, Qiu XG, Segawa Y
159 - 164	Investigations on the growth mechanism of wide-gap II-VI semiconductors by means of reflection high energy electron diffraction Griesche J
165 - 167	Structural properties of MBE grown GaMnAs layers Sadowski J, Domagala JZ, Bak-Misiuk J, Kolesnik S, Swiatek K, Kanski J, Ilver L
168 - 170	Influence of Mn content in MBE-grown Sn1-xMnxTe layers on their structural properties studied by X-ray diffraction Diduszko R, Domuchowski V, Nadolny AJ, Sadowski J
171 - 175	The elastic strain and composition of self-assembled GeSi islands on Si(001) Krasil'nik ZF, Dolgov IV, Drozdov YN, Filatov DO, Gusev SA, Lobanov DN, Moldavskaya LD, Novikov AV, Postnikov VV, Vostokov NV
176 - 179	Ultra low energy SIMS, XTEM and X-ray diffraction methods for the characterization of a MBE grown short period (SinGem)(16) superlattices Mironov OA, Fulgoni DJF, Parry CP, Cooke GA, Dowsett MG, Parker EHC, Chtcherbatchev KD, Bassas JM, Romano-Rodriguez A, Perez-Rodriguez A, Morante JR
180 - 183	Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers Adamowicz B, Hasegawa H
184 - 188	Lateral and depth inhomogeneities in Zn-based heterostructures grown on GaAs by MBE Venger EF, Sadof'ev YG, Semenova GN, Korsunskaya NE, Klad'ko VP, Shechovtsov LV, Semtsiv MP, Borkovskaya LV, Sapko SY
189 - 192	Magnetic anisotropy in MBE-grown epitaxial gadolinium ultra-thin films Kalinowski R, Meyer C, Wawro A, Baczewski LT
193 - 198	Electronic structure of MBE grown CdYbTe: photoemission studies Szamota-Sadowska K, Guziewicz E, Kowalski BJ, Sadowski J, Orlowski BA, Lesiak-Orlowska B, Guillot C, Barrett N, Johnson RL
199 - 202	Manganese fluoride epitaxial growth on Si(111) Anisimov OV, Banshchikov AG, Krupin AV, Moisseeva MM, Sokolov NS, Ulin VP, Yakovlev NL
203 - 209	The heteroepitaxy of II-VI compounds on the non-isovalent substrates (ZnTe/Si) Sidorov YG, Yakushev MV, Pridachin DN, Varavin VS, Burdina LD
210 - 215	Influence of MBE growth conditions on optical properties of CdTe/ZnTe quantum structures Mackowski S, Karczewski G, Kyrychenko F, Wojtowicz T, Kossut J
216 - 219	Reflectance difference spectroscopy: a powerful tool for in situ investigations of II-VI compounds with Mn Bonanni A, Hingerl K, Sitter H, Stifter D
220 - 222	Cation diffusion in MBE-grown CdTe layers Seweryn A, Wojtowicz T, Karczewski G, Barcz A, Jakiela R
223 - 226	Magneto-optical properties of CdTe quantum wells with ternary MgMnTe and quaternary CdMnMgTe barriers Mackowski S, Janik E, Kyrychenko F, Kossut J
227 - 231	Local order of Te impurity atoms and free electron concentration in heavily doped GaAs : Te Slupinski T, Zielinska-Rohozinska E
232 - 234	Growth and transport properties of relaxed epilayers of InAs on GaAs Przeslawski T, Wolkenberg A, Reginski K, Kaniewski J, Bak-Misiuk J
235 - 249	Quantum dot lasers: breakthrough in optoelectronics Bimberg D, Grundmann M, Heinrichsdorff F, Ledentsov NN, Ustinov VM, Zhukov AE, Kovsh AR, Maximov MV, Shernyakov YM, Volovik BV, Tsatsul'nikov AF, Kop'ev PS, Alferov ZI
250 - 259	SiGe - heterostructures for CMOS technology Whall TE, Parker EHC
260 - 266	Growth of resonant cavity quantum well light emitting diodes and two-junction solar cells by solid source molecular beam epitaxy Pessa M, Toivonen M, Savolainen P, Orsila S, Sipila P, Saarinen M, Melanen P, Vilokkinen V, Uusimaa P, Haapamaa J
267 - 276	Transport spectroscopy of quantum wires and superlattices Strasser G, Ploner G, Rauch C, Gornik E
277 - 280	Transition thickness of semiconductor heteroepitaxy Sasaki A, Weber ER, Liliental-Weber Z, Ruvimov S, Washburn J, Nabetani Y
281 - 289	GaN substrates for molecular beam epitaxy growth of homoepitaxial structures Grzegory I, Porowski S
290 - 294	MBE growth of planar microcavities with distributed Bragg reflectors Reginski K, Muszalski J, Bugajski M, Ochalski T, Kubica JM, Zbroszczyk M, Katcki J, Ratajczak J
295 - 298	Computer simulations of the transport and electromagnetic properties of MBE-grown quantum structures Kempa K, Bakshi P
299 - 301	Pyrometric interferometry during MBE growth of laser heterostructures Muszalski J
302 - 305	Correlation between the critical layer thickness and the decaytime constant of RHEED oscillations in strained InxGa1-xAs/GaAs structures Nemcsics A