Thin Solid Films

Thin Solid Films, Vol.395, No.1-2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (70 articles)

1 - 11	Summary of research in NEDO Cat-CVD project in Japan Matsumura H
12 - 16	Status of Cat-CVD (Hot Wire CVD) research in the United States Mahan AH
17 - 24	Status of Cat-CVD (Hot-Wire CVD) research in Europe Schropp REI
25 - 28	Some physics and chemistry of hot-wire deposition Gallagher A
29 - 35	Gas phase and surface kinetic processes in polycrystalline silicon hot-wire chemical vapor deposition Holt JK, Swiatek M, Goodwin DG, Muller RP, Goddard WA, Atwater HA
36 - 41	The effect of filament temperature on the gaseous radicals in the hot wire decomposition of silane Duan HL, Zaharias GA, Bent SF
42 - 46	Catalytic decomposition of SiH4 on a hot filament Tange S, Inoue K, Tonokura K, Koshi M
47 - 50	Identification and gas phase kinetics of radical species in Cat-CVD processes of SiH4 Nozaki Y, Kitazoe M, Horii K, Umemoto H, Masuda A, Matsumura H
51 - 54	Effect of hot filament on preparation of YBCO superconducting films by pulsed laser ablation in nitrous oxide gas Morimoto A, Asada K, Minamikawa T, Yonezawa Y, Shimizu T
55 - 60	Development of the Cat-CVD apparatus and its feasibility for mass production Ishibashi K
61 - 65	Influence of gas supply and filament geometry on the large-area deposition of amorphous silicon by hot-wire CVD Ledermann A, Weber U, Mukherjee C, Schroeder B
66 - 70	Hot-wire CVD growth simulation for thickness uniformity Sali JV, Patil SB, Jadkar SR, Takwale MG
71 - 74	Development of Cat-CVD apparatus - a method to control wafer temperatures under thermal influence of heated catalyzer Karasawa M, Masuda A, Ishibashi K, Matsumura H
75 - 77	Novel chamber cleaning method using atomic hydrogen generated by hot catalyzer Uchida K, Izumi A, Matsumura H
78 - 83	Elastic properties of amorphous and nanocrystalline silicon Crandall RS, Liu X
84 - 86	Photo-induced volume changes in a-Si : H films prepared by Cat-CVD method Hatano T, Nakae Y, Mori H, Ohkado K, Yoshida N, Nonomura S, Itoh M, Masuda A, Matsumura H
87 - 91	Hot-wire produced atomic hydrogen: effects during and after amorphous-silicon deposition Brockhoff AM, van der Weg WF, Habraken FHPM
92 - 96	Hydrogenation of laser-crystallized poly-silicon thin films and characterization of defects using a catalytic method Kitahara K, Nogi H, Moritani A
97 - 100	Electrical transport properties of microcrystalline silicon thin films prepared by Cat-CVD Liu F, Zhu M, Feng Y, Han Y, Liu J
IX - XI	Cat-CVD (Hot-Wire CVD) Process - Proceedings of the First International Conference on Cat-CVD (Hot-Wire CVD) Process -Kanazawa, Japan - November 14-17, 2000 - Preface Mahan AH, Schropp REI
101 - 104	Hydrogen-induced electronic states and vibrational modes in hydrogenated amorphous silicon nitride Lin SY
105 - 111	Amorphous and microcrystalline silicon deposited by hot-wire chemical vapor deposition at low substrate temperatures: application to devices and thin-film microelectromechanical systems Conde JP, Alpuim P, Boucinha M, Gaspar J, Chu V
112 - 115	Guiding principles for device-grade hydrogenated amorphous silicon films and design of catalytic chemical vapor deposition apparatus Masuda A, Matsumura H
116 - 120	Influence of atomic hydrogen on the growth kinetics of a-Si : H films and on the properties of silicon substrates Seitz H, Bauer S, Dusane RO, Schroder B
121 - 124	Is the nucleation and coalescence behavior in the growth of a-Si : H films prepared by the CAT-CVD different? Dusane RO, Bauer S, Schroder B, Oechsner H
125 - 129	Investigations on doping of amorphous and nanocrystalline silicon films deposited by catalytic chemical vapour deposition Fonrodona M, Soler D, Bertomeu J, Andreu J
130 - 133	Depth profiling and the effect of oxygen and carbon on the photoelectrical properties of amorphous silicon films deposited using tungsten wire filaments Persheyev SK, Goldie DM, Gibson RAG, Rose MJ, Anthony S, Keeble DJ, Robb K, Main C, Reynolds S, Zrinscak I
134 - 137	Electronic states and the light-induced metastability in hydrogenated amorphous silicon prepared by hot-wire CVD Han DX, Yue GZ, Habuchi H, Iwaniczko E, Wang Q
138 - 141	High-stability hydrogenated amorphous silicon films for light-soaking prepared by catalytic CVD at high deposition rates Itoh M, Ishibashi Y, Masuda A, Matsumura H
142 - 146	Hot-wire deposition of photonic-grade amorphous silicon Fortmann CM, Jaen EL, Hata N, Anderson WA, Mahan AH
147 - 151	Influence of a-Si : H deposition by catalytic CVD on transparent conducting oxides Imamori K, Masuda A, Matsumura H
152 - 156	High-rate deposition of silicon thin-film solar cells by the hot-wire cell method Konagai M, Tsushima T, Kim MK, Asakusa K, Yamada A, Kudriavtsev Y, Villegas A, Asomoza R
157 - 162	Correlated structural and electronic properties of microcrystalline silicon films deposited at low temperature by catalytic CVD Bouree JE
163 - 168	Nanocrystalline silicon from hot-wire deposition - a photovoltaic material? Bruhne K, Schubert MB, Kohler C, Werner JH
169 - 172	Proposal of catalytic chemical sputtering method and its application to prepare large grain size poly-Si Kamesaki K, Masuda A, Izumi A, Matsumura H
173 - 177	Fundamental considerations regarding the growth of amorphous and microcrystalline silicon and alloy films Dalal VL
178 - 183	Growth mechanisms and structural properties of microcrystalline silicon films deposited by catalytic CVD Niikura C, Kim SY, Drevillon B, Poissant Y, Cabarrocas PRI, Bouree JE
184 - 187	Hot-wire CVD-grown microcrystalline silicon films with and without initial growing layer modification by transformer-coupled plasma Kim DY, Ahn BJ, Moon SI, Yi J
188 - 193	The influence of filament temperature on crystallographic properties of poly-Si films prepared by the hot-wire CVD method Lee JC, Kang KH, Kim SK, Yoon KH, Song J, Park IJ
194 - 197	The influence of different catalyzers in hot-wire CVD for the deposition of polycrystalline silicon thin films van Veenendaal PATT, Gijzeman OLJ, Rath JK, Schropp REI
198 - 201	Formation of silicon films for solar cells by the Cat-CVD method Komoda M, Kamesaki K, Masuda A, Matsumura H
202 - 205	Highly conducting doped microcrystalline silicon (mu c-Si : H) at very low substrate temperature by Cat-CVD Dusane RO, Diehl F, Weber U, Schroder B
206 - 212	The role of hydrogen dilution of silane and phosphorus doping on hydrogenated microcrystalline silicon (mu c-Si : H) films prepared by hot-wire chemical vapor deposition (HW-CVD) technique Jadkar SR, Sali JV, Takwale MG, Musale DV, Kshirsagar ST
213 - 216	Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD Feng Y, Zhu M, Liu F, Liu J, Han H, Han Y
217 - 220	Effect of r.f.-plasma assistance in hot-wire CVD on properties of mu c-Si : H Itoh T, Inouchi H, Ohkado K, Chikusa K, Nakamura N, Kondo H, Yoshida N, Nonomura S
221 - 224	Low temperature epitaxial growth of Si and Si1-yCy films by hot wire cell method Watahiki T, Abe K, Tamura H, Miyajima S, Yamada A, Konagai M
225 - 229	Fundamental properties of ECR plasma CVD and hydrogen-induced low temperature Si epitaxy Sasaki K
230 - 234	Photo-thermal excitation gas-source MBE growth of super-doped Si : Mn for spin-photonics applications Nakayama H, Ohta H, Kulatov E
235 - 239	Single adatom diffusion in homo- and heteroepitaxies of Si and Ge on (100)-2x1 surfaces modeled by MEAM Mae K
240 - 243	Preparation of silicon-carbon alloy films by hot-wire CVD and their properties Itoh T, Katoh Y, Fujiwara T, Fukunaga K, Nonomura S, Nitta S
244 - 248	Photoluminescent, wide-bandgap a-SiC : H alloy films deposited by Cat-CVD using acetylene Kumbhar A, Patil SB, Kumar S, Lal R, Dusane RO
249 - 252	Fabrication of amorphous carbon nitride films by hot-wire chemical vapor deposition Yokomichi H, Masuda A, Kishimoto N
253 - 256	Attempt to synthesize carbon nanotubes by hot-wire chemical vapor deposition Yokomichi H, Sakai F, Ichihara M, Kishimoto N
257 - 259	Surface chemical reactions of diamond (100) by Cat-CVD Song XM, Wang M, Wang B, Chen GH, Yan H
260 - 265	Surface modification of silicon related materials using a catalytic CVD system for ULSI applications Izumi A
266 - 269	Charge-trapping defects in Cat-CVD silicon nitride films Umeda T, Mochizuki Y, Miyoshi Y, Nashimoto Y
270 - 274	Low temperature silicon nitride deposited by Cat-CVD for deep submicron metal-oxide-semiconductor devices Patil SB, Kumbhar A, Waghmare P, Rao VR, Dusane RO
275 - 279	A Cat-CVD Si3N4 film study and its application to the ULSI process Uchiyama Y, Masuda A, Matsumura H
280 - 283	Low-k silicon nitride film for copper interconnects process prepared by catalytic chemical vapor deposition method at low temperature Sato H, Izumi A, Masuda A, Matsumura H
284 - 287	Preparation of SiNx passivation films for PZT ferroelectric capacitors at low substrate temperatures by catalytic CVD Minamikawa T, Yonezawa Y, Heya A, Fujimori Y, Nakamura T, Masuda A, Matsumura H
288 - 291	Hot-wire chemical vapor deposition (HWCVD) of fluorocarbon and organosilicon thin films Lau KKS, Lewis HGP, Limb SJ, Kwan MC, Gleason KK
292 - 297	High-deposition rate a-Si : H n-i-p solar cells grown by HWCVD Nelson BP, Iwaniczko E, Mahan AH, Wang Q, Xu YQ, Crandall RS, Branz HM
298 - 304	Current status of the thermo-catalytic (hot-wire) CVD of thin silicon films for photovoltaic applications Schroeder B, Weber U, Seitz H, Ledermann A, Mukherjee C
305 - 309	Intrinsic amorphous and microcrystalline silicon by hot-wire-deposition for thin film solar cell applications Klein S, Finger F, Carius R, Wagner H, Stutzmann M
310 - 314	Growth of device quality p-type mu c-Si : H films by hot-wire CVD for a-Si pin and c-Si heterojunction solar cells Mukherjee C, Weber U, Seitz H, Schroder B
315 - 319	Thin film poly-Si formation by Cat-CVD method and its application for solar cells Niira K, Senta H, Hakuma H, Komoda M, Okui H, Fukui K, Arimune H, Shirasawa K
320 - 329	Application of hot-wire chemical vapor-deposited Si : H films in thin film transistors and solar cells Rath JK, Stannowski B, van Veenendaal PATT, van Veen MK, Schropp REI
330 - 334	High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate Sakai M, Tsutsumi T, Yoshioka T, Masuda A, Matsumura H
335 - 338	Stability of hydrogenated nanocrystalline silicon thin-film transistors Orpella A, Voz C, Puigdollers J, Dosev D, Fonrodona M, Soler D, Bertomeu J, Asensi JM, Andreu J, Alcubilla R
339 - 342	Hot-wire silicon nitride for thin-film transistors Stannowski B, Rath JK, Schropp REI