Thin Solid Films

Thin Solid Films, Vol.487, No.1-2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (57 articles)

1 - 1	Polycrystalline semiconductors VIII - Preface Strunk HP, Werner JH
2 - 7	Theoretical description of hopping transport in disordered materials Baranovskii SD, Rubel O, Thomas P
8 - 13	Lateral variations of optoelectronic quality of Cu(In1-xGax)Se-2 in the submicron-scale Gutay L, Bauer GH
14 - 18	A multi-diode model for spatially inhomogeneous solar cells Grabitz PO, Rau U, Werner JH
19 - 25	Nanocrystalline silicon films grown by low energy plasma enhanced chemical vapor deposition for optoelectronic applications Binetti S, Acciarri M, Bollani M, Fumagalli L, von Kanel H, Pizzini S
26 - 30	Large grain polycrystalline Si thin films by nucleation-controlled chemical vapor deposition using intermittent source gas supply Yamazaki T, Uraoka Y, Fuyuki T
31 - 34	Structural and optical properties of AgIn5S8 films prepared by pulsed laser deposition Bodnar IV, Gremenok VF
35 - 39	Effects of laser-ablated impurity on aligned ZnO nanorods grown by chemical vapor deposition Hirate T, Sasaki S, Li WC, Miyashita H, Kimpara T, Satoh T
40 - 48	Electrodeposition of semiconductors Lincot D
49 - 53	Electrochemical deposition of nanocrystalline PbSe layers onto p-Si (100) wafers Ivanou DK, Streltsov EA, Fedotov AK, Mazanik AV
54 - 57	Cathodoluminescent behaviour of sprayed ZnS specimens Ebothe J, El Hichou A, Troyon M
58 - 62	Excimer laser induced crystallization of amorphous silicon on flexible polymer substrates Imparato A, Minarini C, Rubino A, Tassini P, Villani F, Della Sala D, Amendola E, Kunst M, Neitzert HC, Bellone S
63 - 66	Pulsed laser crystallization of very thin silicon films Sameshima T, Watakabe H, Andoh N, Higashi S
67 - 71	Pulsed laser crystallization of silicon-germanium films Sameshima I, Watakabe H, Kanno H, Sadoh T, Miyao M
72 - 76	Phase segregation in laser crystallized polycrystalline SiGe thin films Weizman M, Nickel NH, Sieber I, Bohne W, Rohrich J, Strub E, Yan B
77 - 80	Laser crystallized multicrystalline silicon thin films on glass Andra G, Bergmann J, Falk F
81 - 84	Solid phase post-treatment of polysilicon films by a continuous argon laser Michaud JF, Rogel R, Mohammed-Brahim T, Sarret M, Bonnaud O
85 - 88	Production solutions in excimer laser thin film crystallization Brune J, Nikolaus B, Simon F
89 - 92	Influence of laser annealing on hydrogen bonding in compensated polycrystalline silicon thin films Saleh R, Nickel NH, Maydell KV
93 - 96	Electronic transport in P-doped laser-crystallized polycrystalline silicon Maydell KV, Brehme S, Nickel NH, Fuhs W
97 - 101	Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization Ishihara R, He M, Rana V, Hiroshima Y, Inoue S, Shimoda T, Metselaar JW, Beenakker CIM
102 - 106	Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors Pereira L, Barquinha P, Fortunato E, Martins R
107 - 112	Aluminum-induced crystallization of amorphous silicon: Influence of temperature profiles Schneider J, Heimburger R, Klein J, Muske M, Gall S, Fuhs W
113 - 117	Thin-film polycrystalline silicon solar cells on ceramic substrates by aluminium-induced crystallization Gordon I, Van Gestel D, Van Nieuwenhuysen K, Carnel L, Beaucarne G, Poortmans J
118 - 121	Crystallization of silicon films by rapid joule heating method Andoh N, Sameshima T, Kitahara K
122 - 125	Crystallization of Si films on glass substrate using thermal plasma jet Higashi S, Kaku H, Taniguchi H, Murakami H, Miyazaki S
126 - 131	Hydrogen diffusion and induced-crystallization in intrinsic and doped hydrogenated amorphous silicon films Kail F, Hadjadj A, Cabarrocas PRI
132 - 136	Recombination at silicon dangling bonds Boehme C, Friedrich F, Ehara T, Lips K
137 - 141	Structural defects and photoluminescence of epitaxial Si films grown at low temperatures Petter K, Sieber I, Rau B, Brehme S, Lips K, Fuhs W
142 - 146	Simulation of carbon containing complexes at silicon-silicon grain boundaries in cluster approximation Pushkarchuk AL, Saad AM, Fedotov AK, Kuten SA
147 - 151	Defect passivation in chemical vapour deposited fine-grained polycrystalline silicon by plasma hydrogenation Carnel L, Gordon I, Van Nieuwenhuysen K, Van Gestel D, Beaucarne G, Poortmans J
152 - 156	Effect of hydrogen passivation on polycrystalline silicon thin films Honda S, Mates T, Ledinsky M, Oswald J, Fejfar A, Kocka J, Yamazaki T, Uraoka Y, Fuyuki T
157 - 161	Nonradiative recombination and band bending of p-Si(100) surfaces during electrochemical deposition of polycrystalline ZnO Rappich J, Fahoume M
162 - 169	Amorphous and nanocrystalline silicon-based multi-junction solar cells Yang J, Yan BJ, Guha S
170 - 173	Role of buffer layer on the performances of amorphous silicon solar cells with incorporated nanoparticles produced by plasma enhanced chemical vapor deposition at 27.12 MHz Raniero L, Zhang S, Aguas H, Ferreira I, Igreja R, Fortunato E, Martins R
174 - 178	Correlation between structural properties and performances of microcrystalline silicon solar cells Veneri PD, Mercaldo LV, Tassini P, Privato C
179 - 187	Multicrystalline silicon for solar cells Moller HJ, Funke C, Rinio M, Scholz S
188 - 192	Investigation of defect structures in multi-crystal line silicon by laser scattering tomography Naumann M, Kirscht F
193 - 198	Investigation of CuInZnSe2 thin films for solar cell applications Gremenok VF, Zaretskaya EP, Siarheyeva VM, Bente K, Schmitz W, Zalesski VB, Moller HJ
199 - 201	Preparation and photosensitivity investigation of n-GaSe/p-CuIn3Se5 heterostructures Bodnar IV, Victorov IA, Kushner TL, Rud' VY, Rud' VY
202 - 204	Modification of electrical properties of CdSxSe1-x films by hard irradiation and nanostructuring Saad AM, Fedotov AK, Mazanik AV, Tarasik MI, Yanchenko AM, Posedko AS, Survilo LY, Trofimov YV, Kurilovich NF
205 - 211	Recent advances in ZnO transparent thin film transistors Fortunato E, Barquinha P, Pimentel A, Goncalves A, Marques A, Pereira L, Martins R
212 - 215	Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices Pimentel A, Fortunato E, Goncalves A, Marques A, Aguas H, Pereira L, Ferreira I, Martins R
216 - 220	Thermal degradation of low temperature poly-Si TFT Fuyuki T, Kitajima K, Yano H, Hatayama T, Uraoka Y, Hashimoto S, Morita Y
221 - 226	Short channel effects in polysilicon thin film transistors Fortunato G, Valletta A, Gaucci P, Mariucci L, Brotherton SD
227 - 231	Top-grate microcrystalline silicon TFTs processed at low temperature (< 200 degrees C) Saboundji A, Coulon N, Gorin A, Lhermite H, Mohammed-Brahim T, Fonrodona M, Bertomeu J, Andreu J
232 - 236	Stable p-channel polysilicon thin film transistors fabricated by laser doping technique Di Gaspare A, Mariucci L, Pecora A, Fortunato G
237 - 241	Improved electrical stability in asymmetric fingered polysilicon thin film transistors Cuscuna M, Mariucci L, Fortunato G, Bonfiglietti A, Pecora A, Valletta A
242 - 246	Channel doping effects in poly-Si thin film transistors Valletta A, Mariucci L, Bonfiglietti A, Fortunato G, Brotherton SD
247 - 251	The effect of generation-recombination mechanisms on the transient behavior of polycrystalline silicon transistors Papaioannou GJ, Voutsas A, Exarchos M, Kouvatsos D
252 - 254	Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures Andoh N, Sameshima T, Andoh Y
255 - 259	Inter-grain coupling effects on Coulomb oscillations in dual-gated nanocrystalline silicon point-contact transistors Khalafalla MAH, Durrani ZAK, Mizuta H, Ahmed H, Oda S
260 - 267	Polycrystalline GaN for light emitter and field electron emitter applications Hasegawa S, Nishida S, Yamashita T, Asahi H
268 - 270	Amorphous silicon-based PINIP structure for color sensor Zhang S, Raniero L, Fortunato E, Ferreira I, Aguas H, Martins R
271 - 276	Role of annealing environment on the performances of large area ITO films produced by rf magnetron sputtering Canhola P, Martins N, Raniero L, Pereira S, Fortunato E, Ferreira I, Martins R
277 - 282	Preparation and characterization of indium tin oxide thin films for their application as gas sensors Vaishnav VS, Patel PD, Patel NG
283 - 287	Fabrication of deep single trenches from N-type macroporous silicon Gautier G, Ventura L, Pordie T, Rogel R, Jerisian R