Thin Solid Films

Thin Solid Films, Vol.498, No.1-2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (57 articles)

1 - 1	The 3rd Asian Conference on Chemical Vapor Deposition (3rd Asian-CVD), Taipei, Taiwan, November 12-14, 2004 - Preface Feng ZC, Chen CF, Williams K, Shan W
2 - 8	Direct fabrication of large-grain polycrystalline silicon thin films by RF-biased RF-PECVD at low temperature Gu RD, Chen PL
9 - 13	Growth and characterization of polycrystalline Si films prepared by hot-wire chemical vapor deposition Wuu DS, Lien SY, Mao HY, Wu BR, Hsieh IC, Yao PC, Wang JH, Chen WC
14 - 19	Low-temperature fabrication of silicon films by large-area microwave plasma enhanced chemical vapor deposition Gu JD, Chen PL
20 - 24	Characterization of sputter-induced temperature effect in fluorine doped SiO2 film deposition by high-density plasma chemical vapor deposition Hsiao WC, Liu CP, Wang YL
25 - 29	Rate analysis of chemical vapor deposition by use of the thin tubular reactor Kawase M, Miura K
30 - 35	Optimization of Al-CVD process based on elementary reaction simulation and experimental verification: From the growth rate to the surface morphology Sugiyama M, Lino T, Nakajima T, Tanaka T, Egashira Y, Yamashita K, Komiyama H, Shimogaki Y
36 - 42	Comparison of characteristics and integration of copper diffusion-barrier dielectrics Wang TC, Cheng YL, Wang YL, Hsieh TE, Hwang GJ, Chen CF
43 - 49	A novel two-step MOCVD for producing thin copper films with a mixture of ethyl alcohol and water as the additive Lee HH, Lee C, Kuo YL, Yen YW
50 - 55	Novel slurry solution for dishing elimination in copper process beyond 0.1-mu m technology Chen KW, Wang YL, Liu CP, Chang L, Li FY
56 - 59	Mechanism for Cu void defect on various electroplated film conditions Feng HP, Cheng MY, Wang YL, Chang SC, Wang YY, Wan CC
60 - 63	High-selectivity damascene chemical mechanical polishing Chiu SY, Wang YL, Liu CP, Chang SC, Hwang GJ, Feng MS, Chen CF
64 - 69	Effects of plasma treatment in the tungsten process for chemical vapor deposition titanium nitride barrier film beyond nanometer technology Chen KW, Wang YL, Chang L, Li FY, Hwang GJ
70 - 74	Integration issues for siloxane-based hydrogen silsesquioxane (HSQ) applied on TFT-LCDs Chang TS, Chang TC, Liu PT, Chang TS, Yeh FS
75 - 79	Effect of NH3 on the fabrication of HfN as gate-electrode using MOCVD Wang WW, Nabatame T, Shimogaki Y
80 - 84	Preparation and characterization of indium oxide film by electrochemical deposition Ho WH, Yen SK
85 - 89	Uniform COSi2 nano-nucleus formation by oxide mediated silicidation with a Ti capping layer Chang JJ, Hsieh TE, Liu CP, Wang YL
90 - 93	Oxide-mediated fort-nation of epitaxy silicide on heavily doped Si surfaces and narrow width active region Chen YM, Tu GC, Wang YL
94 - 99	Growth of thick GaN on the (0001) Al2O3 substrate by hydride-metal organic vapor phase epitaxy Park C, Yeo S, Kim JH, Yoon D, Anderson TJ
100 - 107	Quantum chemical study on the gas-phase reaction of tertiarybutylhydrazine: A potential nitrogen-bearing compound for GaN film growth Hsu YJ, Hong LS, Jiang JC
108 - 112	Control and improvement of crystalline cracking from GaN thin films grown on Si by metalorganic chemical vapor deposition Yu JW, Lin HC, Feng ZC, Wang LS, Tripathy S, Chua SJ
113 - 117	High hole concentration of p-type InGaN epitaxial layers grown by MOCVD Chen PC, Chen CH, Chang SJ, Su YK, Chang PC, Huang BR
118 - 122	Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition Feng ZC, Liu W, Chua SJ, Yu JW, Yang CC, Yang TR, Zhao J
123 - 127	Optical and structural properties of InGaN/GaN multiple quantum well structure grown by metalorganic chemical vapor deposition Chen JH, Feng ZC, Tsai HL, Yang JR, Li P, Wetzel C, Detchprohm T, Nelson J
128 - 132	Tuning the emitting wavelength of InGaN/GaN superlattices from blue, green to yellow by controlling the size of InGaN quasi-quantum dot Lai YL, Liu CP, Chen ZQ
133 - 136	High UV/visible rejection contrast AlGaN/GaN MIS photodetectors Chang PC, Chen CH, Chang SJ, Su YK, Yu CL, Huang BR, Chen PC
137 - 141	Growth and characterization of chemical-vapor-deposited zinc oxide nanorods Wu CL, Chang L, Chen HG, Lin CW, Chang TF, Chao YC, Yan JK
142 - 145	Thin-film transistors with active layers of zinc oxide (ZnO) fabricated by low-temperature chemical bath method Cheng HC, Chen CF, Lee CC
146 - 151	A study of Love wave devices in ZnO/Quartz and ZnO/LiTaO3 structures Chang RC, Chu SY, Hong CS, Chuang YT
152 - 157	The influence of magnesium and hydrogen introduction in sputtered zinc oxide thin films Huang JH, Liu CP
158 - 162	Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition Yang TR, Cheng YK, Wang JB, Feng ZC
163 - 166	Role of surface diffusion during selective area MOVPE growth of InP Waki N, Nakano T, Sugiyma M, Nakano Y, Shimogaki Y
167 - 173	Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition Feng ZC, Lin HC, Zhao J, Yang TR, Ferguson I
174 - 178	Simulation and design of the emission wavelength of multiple quantum well structures fabricated by selective area metalorganic chemical vapor deposition Shioda T, Doi T, Al Amin A, Song XL, Sugiyama M, Shimogaki Y, Nakano Y
179 - 182	Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing Zhao J, Chen J, Feng ZC, Chen JL, Liu R, Xu G
183 - 187	Optical recombination-emission characteristics and surface morphologies of InAs quantum dots grown on misoriented GaAs substrate by MOCVD Hsu MY, Tang SF, Chiang CD, Su CC, Wang LC, Kuo CT
188 - 192	Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots Kong LM, Cai JF, Wu ZY, Gong Z, Niu ZC, Feng ZC
193 - 197	Template-assisted synthesis of mesoporous tubular carbon nanostructure by chemical vapor infiltration method Lo AY, Huang SJ, Chen WH, Peng YR, Kuo CT, Liu SB
198 - 201	Low temperature growth of carbon nanotubes on printing electrodes by MPCVD Chen KC, Chen CF, Chiang JS, Hwang CL, Chang YY, Lee CC
202 - 205	High efficiency microwave digestion purification of multi-walled carbon nanotubes synthesized by thermal chemical vapor deposition Chen CM, Chen M, Peng YW, Yu HW, Chen CF
206 - 211	Growth of hydrogen-free diamond-like carbon films by a particle-free hollow-cathode arc ion plating system Cheng CY, Hong FCN
212 - 219	Diamond growth on an array of seeds: The revolution of diamond production Sung JC, Sung M, Sung E
220 - 223	Mechanical and optical properties of diamond-like carbon thin films deposited by low temperature process Su CH, Lin CR, Chang CY, Hung HC, Lin TY
224 - 229	Interface study of diamond films grown on (100) silicon Wang SF, Wang YR, Pu JC, Sung JC
230 - 234	Chemical vapor deposition of uniform and high-quality diamond films by bias-enhanced nucleation method Yan JK, Chang L
235 - 239	Effects of acetylene on property of plasma amorphous carbon films Louh SP, Wong CH, Hon MH
240 - 243	Fabrication of nickel oxide and Ni-doped indium tin oxide thin films using pyrosol process Nakasa A, Adachi M, Usami H, Suzuki E, Taniguchi Y
244 - 248	Short-diode like diffusion capacitance of organic light emission devices Tsai MN, Chang TC, Liu PT, Ko CW, Chen CJ, Lo KM
249 - 253	Improved efficiency of organic light-emitting diodes using CoPc buffer layer Kao PC, Chu SY, You ZX, Liou SJ, Chuang CA
254 - 258	Characteristics of TiOx films prepared by chemical vapor deposition using tetrakis-dimethyl-amido-titanium and water Lim GT, Kim DH
259 - 265	Sol-hydrothermal preparation and photocatalysis of titanium dioxide Su C, Tseng CM, Chen LF, You BH, Hsu BC, Chen SS
266 - 270	Thickness dependence of electrical and optical properties of sputtered nickel oxide films Chen HL, Lu YM, Hwang WS
271 - 276	Effect of annealing treatments on the microstructure of (Zr0.8Sn0.2)TiO4 thin films sputtered on silicon Hsu CH, Huang CL
277 - 281	In situ FTIR investigation of the effect of gas-phase reaction on the deposition of Pb(ZrTi)O-3 films by MOCVD Asano G, Satake T, Ohtsuki K, Funakubo H
282 - 285	Width-dependent anomalous CoSix sheet resistance change by Ti and TiN capping process Chen YM, Tu GC, Wang YL
286 - 288	Phase transformation of tantalum on different dielectric films with plasma treatment Huang CC, Wang YL, Chang SC, Hwang GJ, Huang JL
289 - 293	Characterization and thermal stability of fluorosilicate glass films deposited by high density plasma chemical vapor deposition with different bias power Hsiao WC, Liu CP, Wang YL, Cheng YL