Thin Solid Films

Thin Solid Films, Vol.508, No.1-2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (103 articles)

1 - 5	Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates Van Elshocht S, Caymax M, Conard T, De Gendt S, Hoflijk I, Houssa M, Leys F, Bonzom R, De Jaeger B, Van Steenbergen J, Vandervorst W, Heyns M, Meuris M
6 - 9	Surfactant-mediated epitaxy of high-quality low-doped relaxed germanium films on silicon (001) Wietler TF, Bugiel E, Hofmann KR
10 - 13	Pattern size dependence of Si1-xGex epitaxial growth for high mobility device applications Lee J, Kim H, Bao MQ, Wang KL
14 - 19	Impact of seed layer on material quality of epitaxial germanium on silicon deposited by low pressure chemical vapor deposition Olubuyide OO, Danielson DT, Kimerling LC, Hoyt JL
20 - 23	Si1-xGex sputter epitaxy technique and its application to RTD Kubota J, Hashimoto A, Suda Y
24 - 28	Low-temperature molecular beam epitaxy growth of Si/SiGe THz quantum cascade structures on virtual substrates Zhao M, Ni WX, Townsend P, Lynch SA, Paul DJ, Hsu CC, Chang MN
29 - 32	Thermal annihilation process of stacking-fault tetrahedron defect in Si-film epitaxy Kobayashi R, Nakayama T
33 - 35	Electrochemical defect revealing in thin SiGe layers Werner J, Schalberger P, Oehme M, Lyutovich K, Kasper E
36 - 39	Effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline Si1-x-yGexCy film deposited by ultraclean LPCVD Shim H, Sakuraba M, Murota J
40 - 43	Electric field-dependent Ni-mediated lateral crystallization of a-Si on SiO2 Kanno H, Kenjo A, Sadoh T, Miyao M
44 - 47	Au-induced lateral crystallization of a-Si1-xGex (x : 0-1) at low temperature Aoki T, Kanno H, Kenjo A, Sadoh T, Miyao M
48 - 52	UV-laser-assisted processing of thin silicon-germanium-carbon films Lopez E, Chiussi S, Serra J, Gonzalez P, Leon B
53 - 56	In-situ observation of rapid crystalline growth induced by excimer laser irradiation to Ge/Si stacked structure Yamashita A, Okamoto Y, Higashi S, Miyazaki S, Watakabe H, Sameshima T
57 - 60	Characterization of metal-induced lateral crystallization of amorphous SiGe on insulating film Itakura M, Masumori S, Ohta T, Tomokiyo Y, Kuwano N, Kanno H, Sadoh T, Miyao M
61 - 64	Formation of microcrystal line silicon and SiNx films by electron-beam-induced-chemical vapor deposition at ultra low temperature Sato T, Mitsui M, Yamanaka J, Nakagawa K, Aoki Y, Sato S, Miyata C
65 - 69	Investigation of nanocrystalline Epi-Si/gamma-Al2O3 heterostructure deposited on Si substrate by spectroscopic ellipsometry Khatun MH, Shahjahan M, Ito R, Sawada K, Ishida M
70 - 73	Growth of Mg2Si1-xGex layers on silicon-germanium substrates Mizuyoshi Y, Yamada R, Ohishi T, Saito Y, Koyama T, Hayakawa Y, Matsuyama T, Tatsuoka H
74 - 77	Growth evolution of Sr-silicide layers Mg2Si/Si(111) and Mg2Si/Si(111) substrates Miura K, Ohishi T, Inaba T, Mizuyoshi Y, Takagi N, Matsuyama T, Momose Y, Koyama T, Hayakawa Y, Tatsuoka H
78 - 81	Epitaxial growth of Fe3Si/CaF2/Si(111) hybrid structures by molecular beam epitaxy Kobayashi K, Sunohara T, Umada M, Yanagihara H, Kita E, Suemasu T
82 - 85	Growth process and structure of Er/Si(100) thin film Fujii S, Michishita Y, Miyamae N, Suto H, Honda S, Okado H, Oura K, Katayama M
86 - 89	Epitaxial growth of Er2O3 films on oxidized Si(111) and Si(001) substrates Zhu YY, Xu R, Chen S, Fang ZB, Xue F, Fan YL, Yang XJ, Jiang ZM
90 - 95	The role of point defects in strain relaxation in epitaxially grown SiGe structures Vyatkin AF
96 - 98	Direct formation of strained Si on insulator by laser annealing Tsunoda I, Matsuura R, Tanaka M, Watakabe H, Sameshima T, Miyao M
99 - 102	Growth of strain relaxed Si1-yCy on Si buffer layer by gas-source MBE Ishihara H, Murano M, Watahiki T, Yamada A, Konagai M, Nakamura Y
XI - XII	Proceedings of the Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4) Awaji Island, Hyogo, Japan - Preface Murota J, Zaima S, Miyao M
103 - 106	Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate Yamanaka J, Sawano K, Suzuki K, Nakagawa K, Ozawa Y, Hattori T, Shiraki Y
107 - 111	Structural and electrical evaluation for strained Si/SiGe on insulator Wang D, Ii S, Ikeda K, Nakashima H, Ninomiya M, Nakamae M, Nakashima H
112 - 116	Strain relaxation processes in strained-Si layer on SiGe-on-insulator substrates Hirashita N, Sugiyama N, Toyoda E, Takagi S
117 - 119	Strain field and related roughness formation in SiGe relaxed buffer layers Sawano K, Usami N, Arimoto K, Nakagawa K, Shiraki Y
120 - 123	Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots Lee SW, Chen PS, Chien TY, Chen LJ, Chia CT, Liu CW
124 - 127	Crystallinity and strain control growth of SiGe using ion sputtering technique Sasaki K, Yoshimori K
128 - 131	Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction Mochizuki S, Sakai A, Taoka N, Nakatsuka O, Takeda S, Kimura S, Ogawa M, Zaima S
132 - 135	Determination of lattice parameters of SiGe/Si(110) heterostructures Arimoto K, Yamanaka J, Nakagawa K, Sawano K, Shiraki Y, Koh S, Usami N
136 - 139	Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112) Lee ML, Antoniadis DA, Fitzgerald EA
140 - 142	Carbon effect on strain compensation in Si1-x-yGexCy films epitaxially grown on Si(100) Nitta H, Tanabe J, Sakuraba M, Murota J
143 - 146	Thermal effect on strain relaxation in Ge films epitaxially grown on Si(100) using ECR plasma CVD Sugawara K, Sakuraba M, Murota J
147 - 151	Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates Taoka N, Sakai A, Mochizuki S, Nakatsuka O, Ogawa M, Zaima S
152 - 155	Hydrogen desorption from SiH4 adsorbed SiGe(001) surfaces Hirose F, Kimura Y, Shinohara M, Niwano M
156 - 159	Interdiffusion at Si/SiGe interface analyzed by high-resolution X-ray diffraction Zheng SQ, Kawashima M, Mori M, Tambo T, Tatsuyama C
160 - 162	Growth and characterization of short-period silicon isotope superlattices Shimizu Y, Itoh KM
163 - 165	Intermixing of Ge and Si during exposure of GeH4 on Si Watari G, Usami N, Nose Y, Fujiwara K, Sazaki G, Nakajima K
166 - 168	Suppression of atomic exchange between Ge and Si during germane adsorption on Si(001) using atomically flat surface Narita Y, Murata T, Suemitsu M
169 - 174	Consumption kinetics of Si atoms during growth and decomposition of very thin oxide on Si(001) surfaces Ogawa S, Yoshigoe A, Ishidzuka S, Teraoka Y, Takakuwa Y
175 - 177	In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces Asaoka H, Yamazaki T, Yamamoto H, Shamoto S
178 - 181	Morphological change of Co-nanodot on SiO2 by thermal treatment Ueda K, Sadoh T, Kenjo A, Shoji F, Sato K, Kurino H, Koyanagi M, Miyao M
182 - 185	Fabrication of nanocrystalline Si : H nanodot arrays with controllable porous alumina membranes Ding GQ, Zheng MJ, Xu WL, Shen WZ
186 - 189	Characterization of electronic charged states of P-doped Si quantum dots using AFM/Kelvin probe Makihara K, Xu J, Ikeda M, Murakami H, Higashi S, Miyazaki S
190 - 194	Decay characteristics of electronic charged states of Si quantum dots as evaluated by an AFM/Kelvin probe technique Nishitani J, Makihara K, Ikeda M, Murakami H, Higashi S, Miyazaki S
195 - 199	The challenges in guided self-assembly of Ge and InAs quantum dots on Si Zhao ZM, Yoon TS, Feng W, Li BY, Kim JH, Liu J, Hulko O, Xie YH, Kim HM, Kim KB, Kim HJ, Wang KL, Ratsch C, Caflisch R, Ryu DY, Russell TP
200 - 202	Ge dot formation using germane on a monomethylsilane-adsorbed Si(001)-2 x 1 surface Narita Y, Murata T, Kato A, Endoh T, Suemitsu M
203 - 206	Artificially positioned multiply-stacked Ge dot array Kitayama D, Yoichi T, Suda Y
207 - 212	Influence of point defects on the optical properties of self-assembled Ge/Si hut clusters Nguyen-Duc TK, Le Thanh V, Yam V, Boucaud P, Bouchier D, Schmidt OG, Derrien J
213 - 217	Growth mode, strain state and shape of Ge islands during their growth at different temperatures: a combined in situ GISAXS and GIXD study Richard MI, Schulli TU, Wintersberger E, Renaud G, Bauer G
218 - 221	Field-emission properties of self-assembled Si-capped Ge quantum dots Lee SW, Chueh YL, Chen HC, Chen LJ, Chen PS, Chou LJ, Liu CW
222 - 225	Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy Chen SY, Chen LJ
226 - 230	Silicon nanotubes: Synthesis and characterization Castrucci P, Scarselli M, De Crescenzi M, Diociaiuti M, Chaudhari PS, Balasubramanian C, Bhave TM, Bhoraskar SV
231 - 234	Si atom wire growth for quantum information processing Sekiguchi T, Yoshida S, Itoh KM
235 - 238	Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer Burbanudin ZA, Nuryadi R, Ishikawa Y, Tabe M
239 - 242	Strain relaxation by stripe patterning in Si/Si(1-x)Gex/Si(100) heterostructures Uhm J, Sakuraba M, Murota J
243 - 246	A simple approach to polytypes of SiC and its application to nanowires Ito T, Sano K, Akiyama T, Nakamura K
247 - 250	Thickness-dependent stress-relaxation in thin SGOI structures and its improvement Tanaka M, Tsunoda S, Sadoh T, Enokida T, Ninomiya M, Nakamae M, Miyao M
251 - 255	Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process Tezuka T, Moriyama Y, Nakaharai S, Sugiyama N, Hirashita N, Toyoda E, Miyamura Y, Takagi S
256 - 259	Local wet-oxidation characteristic of strained-Si/SiGe-on-insulator Nishisaka M, Shirata O, Sakamoto D, Enokida T, Hagino H, Asano T
260 - 265	Non-selective thin SiGe strain-relaxed buffer layers: Growth and carbon-induced relaxation Caymax M, Delhougne R, Ries M, Luysberg M, Loo R
266 - 269	Characteristics of selective epitaxial SiGe deposition processes for recessed source/drain applications Loo R, Verheyen P, Eneman G, Rooyackers R, Leys F, Shamiryan D, De Meyer K, Absil PP, Caymax M
270 - 275	Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion Uematsu M, Kageshima H, Fukatsu S, Itoh KM, Shiraishl K, Otani M, Oshiyama A
276 - 278	Application of deconvolution to boron depth profiling in SiGe heterostructures Yang MH, Goodman GG
279 - 283	Atomic layer processing for doping of SiGe Tillack B, Yuji YA, Bolze D, Heinemann B, Rucker H, Knoll D, Murota J, Mehr W
284 - 287	Characterization of BF2+ ion-implanted layers in strained-silicon/SiGe hetero structures Ishidora Y, Koyama K, Morioka J, Inada T, Sugii N
288 - 291	P doping control during SiGe : C epitaxy Yamamoto Y, Tillack B, Kopke K, Kurps R
292 - 296	Epitaxy solutions for Ge MOS technology Leys FE, Bonzom R, Loo R, Richard O, De Jaeger B, Van Steenbergen J, Dessein K, Conard T, Rip J, Bender H, Vandervorst W, Meuris M, Caymax M
297 - 300	Chemical vapor phase etching of polycrystalline selective to epitaxial Si and SiGe Yamamoto Y, Tillack B, Kopke K, Fursenko O
301 - 304	Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si1-xGex epitaxial films Cho HS, Sakuraba M, Murota J
305 - 310	Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks Shiraishi K, Yamada K, Torii K, Akasaka Y, Nakajima K, Konno M, Chikyow T, Kitajima H, Afikado T, Nara Y
311 - 314	A first-principles study of O-2 incorporation and its diffusion in compressively strained high-density silicon oxides Akiyama T, Kawamoto K, Kageshima H, Uematsu M, Nakamura K, Ito T
315 - 317	Electrical properties for poly-Ge films fabricated by pulsed laser annealing Watakabe H, Sameshima T, Kanno H, Miyao M
318 - 322	Impact of lateral and vertical scaling on the reliability of a low-complexity 200 GHz SiGe : C HBT Piontek A, Choi LJ, Van Huylenbroeck S, Vanhoucke T, Hijzen E, Decoutere S
323 - 325	Sub-50 nm high performance PDBFET with impact ionization Born M, Abelein U, Bhuwalka KK, Schindler M, Schmidt M, Ludsteck A, Schulze J, Eisele I
326 - 328	Characterization of hot-carrier degraded SiGe/Si-hetero-PMOSFETs Tsuchiya T, Sakuraba M, Murota J
329 - 332	Fabrication and characterization of strained Si1-yCy n-MOSFETs grown by Hot Wire Cell method Ishihara H, Watahiki T, Yamada A, Konagai M
333 - 337	Strained Si channel NMOSFETs using a stress field with Si1-yCy source and drain stressors Chang ST, Tasi HS, Kung C
338 - 341	Doubling speed using strained Si/SiGe CMOS technology Olsen SH, Temple M, O'Neill AG, Paul DJ, Chattopadhyay S, Kwa KSK, Driscoll LS
342 - 345	Electronic transport properties of thin, channel regions from SOI through GOI: A first-principles study Yamauchi J
346 - 350	Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain Maeda T, Ikeda K, Nakaharai S, Tezuka T, Sugiyama N, Moriyama Y, Takagi S
351 - 354	2-D hole gas with two-subband occupation in a strained Ge channel: Scattering mechanisms Rossner B, von Kanel H, Chrastina D, Isella G, Batlogg B
355 - 358	Strain dependence of hole Hall mobility in compressively strained Ge channel hetero structures Abe Y, Sato H, Ozawa Y, Sawano K, Nakagawa K, Shiraki Y
359 - 362	Characterization of platinum gerrnanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET Ikeda K, Maeda T, Takagi SI
363 - 366	Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy Morita K, Inomata Y, Suemasu T
367 - 370	Effect of thermal annealing on the photoluminescence of beta-FeSi2 films on Si substrate Yamaguchi K, Shimura K, Udono H, Sasase M, Yamamoto H, Shamoto SI, Hojou K
371 - 375	Epitaxial growth and characterization of Si-based light-emitting Si/beta-FeSi2 film/Si double heterostructures on Si(001) substrates by molecular beam epitaxy Sunohara T, Kobayashi K, Suemasu T
376 - 379	Annealing temperature dependence of EL properties of Si/beta-FeSi2/Si(111) double-heterostructures light-emitting diodes Ugajin Y, Takauji M, Suemasu T
380 - 384	Photoluminescence properties of Si/beta-FeSi2/Si double heterostructure Akiyama K, Kaneko S, Hirabayashi Y, Funakubo H
385 - 388	Photo current through SnO2/SiC/p-Si(100) structures Nishikawa S, Hashimoto H, Chikamoto M, Honikoshi K, Aoki M, Arima K, Uchikosi J, Morita M
389 - 392	delta-Doped MOS Ge/Si quantum dot/well infrared photodetector Lin CH, Yu CY, Kuo PS, Chang CC, Guo TH, Liu CW
393 - 395	High-speed germanium photodiodes monolithically integrated on silicon with MBE Oehme M, Werner J, Jutzi M, Wohl G, Kasper E, Berroth M
396 - 398	1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots Yu J, Kasper E, Oehme M
399 - 401	Photo detection characteristics of Si/Si1-xGex/Si p-i-n diodes integrated with optical waveguides Yamada A, Sakuraba M, Murota J
402 - 405	Influence of stacked Ge islands on the dark current-voltage characteristics and the conversion efficiency of the solar cells Alguno A, Usami N, Ohdaira K, Pan WG, Tayanagi M, Nakajima K
406 - 409	Highly enhanced photoluminescence of as-anodized and electrochemically oxidized nanocrystalline p-type porous silicon treated by high-pressure water vapor annealing Gelloz B, Koshida N
410 - 413	A single-chip two-wavelength switchable strained Si1-xGex/Si-quantum-well LED Yasuhara N, Fukatsu S
414 - 417	Diminished Shockley-Read-Hall recombination in near-surface pseudomorphic Si1-xGex/Si double quantum wells Sugawara Y, Nakajima N, Fukatsu S
418 - 421	Si microphotonics for optical interconnection Wada K, Ahn DH, Lim DR, Michel J, Kimerling LC
422 - 425	Highly drop-efficient channel-drop optical filters with Si-based photonic crystal slabs Gomyo A, Ushida J, Shirane A