2925 - 2925 |
6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-6) April 15-17, 2009 Tokyo Fashion Town, Japan Preface Hosono H |
2926 - 2929 |
A study of deposition of ITO films on organic layer using facing target sputtering in Ar and Kr gases Lei H, Ichikawa K, Hoshi Y, Wang MH, Uchida T, Sawada Y |
2930 - 2933 |
Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells Koida T, Sai H, Kondo M |
2934 - 2936 |
Review of pulmonary toxicity of indium compounds to animals and humans Tanaka A, Hirata M, Kiyohara Y, Nakano M, Omae K, Shiratani M, Koga K |
2937 - 2940 |
Comparative study of resistivity characteristics between transparent conducting AZO and GZO thin films for use at high temperatures Nomoto J, Konagai M, Okada K, Ito T, Miyata T, Minami T |
2941 - 2944 |
The effect of annealing on Al-doped ZnO films deposited by RF magnetron sputtering method for transparent electrodes Cho HJ, Lee SU, Hong B, Shin YD, Ju JY, Kim HD, Park M, Choi WS |
2945 - 2948 |
Effect of sublayer surface treatments on ZnO transparent conductive oxides using dc magnetron sputtering Imanishi Y, Taguchi M, Onisawa K |
2949 - 2952 |
Characterization of Zn1-xMgxO transparent conducting thin films fabricated by multi-cathode RF-magnetron sputtering Maejima K, Shibata H, Tampo H, Matsubara K, Niki S |
2953 - 2956 |
Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition Asahara H, Takamizu D, Inokuchi A, Hirayama M, Teramoto A, Saito S, Takahashi M, Ohmi T |
2957 - 2960 |
Control of cathodic potential for deposition of ZnO by constant-current electrochemical method Nouzu N, Ashida A, Yoshimura T, Fujimura N |
2961 - 2966 |
Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells Fay S, Steinhauser J, Nicolay S, Ballif C |
2967 - 2970 |
Microstructure of a-plane ZnO grown on LaAlO3 (001) Wang WL, Peng CY, Ho YT, Chang L |
2971 - 2974 |
Growth process observation of homoepitaxial ZnO thin films using optical emission spectra during pulsed laser deposition Nakamura T, Masuko K, Ashida A, Yoshimura T, Fujimura N |
2975 - 2979 |
Influence of VI/II ratios on the growth of ZnO thin films on sapphire substrates by low temperature MOCVD Kong BH, Kim DC, Mohanta SK, Cho HK |
2980 - 2983 |
Al-doped ZnO (AZO) films deposited by reactive sputtering with unipolar-pulsing and plasma-emission control systems Hirohata K, Nishi Y, Tsukamoto N, Oka N, Sato Y, Yamamoto I, Shigesato Y |
2984 - 2987 |
Improvements of spatial resistivity distribution in transparent conducting Al-doped ZnO thin films deposited by DC magnetron sputtering Oda J, Nomoto J, Miyata T, Minami T |
2988 - 2991 |
Substrate engineering of LaAlO3 for non-polar ZnO growth Ho YT, Wang WL, Peng CY, Chen WC, Liang MH, Tian JS, Chang L |
2992 - 2995 |
Thermal crystallization kinetics and crystallite size distribution of amorphous ITO film deposited in the presence or absence of water vapor Wang MH, Sawada Y, Lei H, Seki Y, Hoshi Y, Uchida T, Konya T, Kishi A |
2996 - 2999 |
Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer Shinozaki T, Nomura K, Katase T, Kamiya T, Hirano M, Hosono H |
3000 - 3003 |
Steady-state photoconductivity of amorphous In-Ga-Zn-O Lee DH, Kawamura K, Nomura K, Yanagi H, Kamiya T, Hirano M, Hosono H |
3004 - 3007 |
DC sputter deposition of amorphous indium-gallium-zinc-oxide (a-IGZO) films with H2O introduction Aoi T, Oka N, Sato Y, Hayashi R, Kumomi H, Shigesato Y |
3008 - 3011 |
Electronic structural analysis of transparent In2O3-ZnO films by hard X-ray photoelectron spectroscopy Shibuya T, Yoshinaka M, Shimane Y, Utsuno F, Yano K, Inoue K, Ikenagab E, Kim JJ, Ueda S, Obata M, Kobayashi K |
3012 - 3016 |
Comprehensive studies on the stabilities of a-In-Ga-Zn-O based thin film transistor by constant current stress Nomura K, Kamiya T, Kikuchi Y, Hirano M, Hosono H |
3017 - 3021 |
Device characteristics improvement of a-In-Ga-Zn-O TFTs by low-temperature annealing Kikuchi Y, Nomura K, Yanagi H, Kamiya T, Hirano M, Hosono H |
3022 - 3025 |
Characteristics of laser-annealed ZnO thin film transistors Kim JJ, Bak JY, Lee JH, Kim HS, Jang NW, Yun Y, Lee WJ |
3026 - 3029 |
Analysis of carrier modulation in channel of ferroelectric-gate transistors having polar semiconductor Fukushima T, Yoshimura T, Masuko K, Maeda K, Ashida A, Fujimura N |
3030 - 3032 |
Role of high-k gate insulators for oxide thin film transistors Lee SY, Chang S, Lee JS |
3033 - 3036 |
Surface-oxidized tungsten for energy-storable dye-sensitized solar cells Saito Y, Uchida S, Kubo T, Segawa H |
3037 - 3041 |
The effects of permittivity and thickness of dielectric layers on micro dielectric barrier discharges Shim SB, Cho SY, Lee DK, Song IC, Park CH, Lee HJ, Lee HJ |
3042 - 3045 |
OLED manufacturing for large area lighting applications Eritt M, May C, Leo K, Toerker M, Radehaus C |
3046 - 3053 |
Advances in chromogenic materials and devices Granqvist CG, Green S, Niklasson GA, Mlyuka NR, von Kraemer S, Georen P |
3054 - 3058 |
Potential of thin-film silicon solar cells by using high haze TCO superstrates Krc J, Lipovsek B, Bokalic M, Campa A, Oyama T, Kambe M, Matsui T, Sai H, Kondo M, Topic M |
3059 - 3062 |
Highly sensitive ultraviolet detector using a ZnO/Si layered SAW oscillator Wei CL, Chen YC, Cheng CC, Kao KS, Cheng DL, Cheng PS |
3063 - 3066 |
Fabrication of Tb-Mg codoped CaSnO3 perovskite thin films and electroluminescence devices Ueda K, Shimizu Y |
3067 - 3070 |
Blue PL and EL emissions from Bi-activated binary oxide thin-film phosphors Fukada H, Ueda K, Ishino J, Miyata T, Minami T |
3071 - 3074 |
Highly flexible indium zinc oxide electrode grown on PET substrate by cost efficient roll-to-roll sputtering process Park YS, Kim HK, Jeong SW, Cho WJ |
3075 - 3080 |
Investigation of brittle failure in transparent conductive oxide and permeation barrier oxide multilayers on flexible polymers Lee GH, Yun J, Lee S, Jeong Y, Jung JH, Cho SH |
3081 - 3084 |
Properties of Ce-doped ITO films deposited on polymer substrate by DC magnetron sputtering Kang YM, Kwon SH, Choi JH, Cho YJ, Song PK |
3085 - 3088 |
Enhanced characterization of ITO films deposited on PET by RF superimposed DC magnetron sputtering Kim SI, Jung TD, Song PK |
3089 - 3092 |
Plastic substrate with gas barrier layer and transparent conductive oxide thin film for flexible displays Hanada T, Negishi T, Shiroishi I, Shiro T |
3093 - 3096 |
Fabrication of highly conductive Ta-doped SnO2 polycrystalline films on glass using seed-layer technique by pulse laser deposition Nakao S, Yamada N, Hitosugi T, Hirose Y, Shimada T, Hasegawa T |
3097 - 3100 |
Control of carrier concentration of p-type transparent conducting CuScO2(0001) epitaxial films Kakehi Y, Satoh K, Yoshimura T, Ashida A, Fujimura N |
3101 - 3104 |
Transparent conducting Nb-doped anatase TiO2 (TNO) thin films sputtered from various oxide targets Yamada N, Hitosugi T, Kasai J, Hoang NLH, Nakao S, Hirose Y, Shimada T, Hasegawa T |
3105 - 3108 |
Advanced key technologies for magnetron sputtering and PECVD of inorganic and hybrid transparent coatings Frach P, Gloess D, Bartzsch H, Taeschner K, Liebig J, Schultheiss E |
3109 - 3114 |
Development of new transparent conductors and device applications utilizing a multidisciplinary approach Szyszka B, Loebmann P, Georg A, May C, Elsaesser C |
3115 - 3118 |
Optical on-line monitoring for the long-term stabilization of a reactive mid-frequency sputtering process of Al-doped zinc oxide films Sittinger V, Ruske F, Pflug A, Dewald W, Szyszka B, Dittmar G |
3119 - 3121 |
Thermophysical properties of aluminum oxide and molybdenum layered films Oka N, Arisawa R, Miyamura A, Sato Y, Yagi T, Taketoshi N, Baba T, Shigesato Y |
3122 - 3125 |
Discharge characteristics of a plasma display panel with hump-shape electrodes Song IC, Ok JW, Hwang SW, Lee HJ, Park CH, Lee DK, Lee HJ |