4409 - 4411 |
Sixth international conference on hot-wire CVD (Cat-CVD) process Preface Bouree JE, Mahan AH |
4412 - 4414 |
Initiated chemical vapor deposition of responsive polymeric surfaces Alf ME, Hatton TA, Gleason KK |
4415 - 4417 |
Initiated chemical vapor deposition of poly(2-hydroxyethyl methacrylate) hydrogels Bose RK, Lau KKS |
4418 - 4420 |
Synthesis of poly(meta-diethynyl benzene) with initiated chemical vapour deposition Bakker R, Weijers P, Spee DA, van Steenbergen MJ, van der Werf CHM, Rath JK, Schropp REI |
4421 - 4425 |
Boron doping: B/H/C/O gas-phase chemistry; H atom density dependences on pressure and wire temperature; puzzles regarding the gas-surface mechanism Mankelevich YA, Ashfold MNR, Comerford DW, Ma J, Richley JC |
4426 - 4428 |
Surface transformations of carbon (graphene, graphite, diamond, carbide), deposited on polycrystalline nickel by hot filaments chemical vapour deposition Rey S, Le Normand F |
4429 - 4431 |
Catalytic decomposition of NH3 on heated Ru and W surfaces Umemoto H, Kashiwagi Y, Ohdaira K, Kobayashi H, Yasui K |
4432 - 4436 |
Quantitative elucidation of the rapid growth and growth saturation of millimeter-scale vertically aligned carbon nanotubes by hot-filament chemical vapor deposition Hong NT, Kim SY, Koh KH, Lee S |
4437 - 4441 |
Growth kinetics of nc-Si:H deposited at 200 degrees C by hot-wire chemical vapour deposition Oliphant CJ, Arendse CJ, Knoesen D, Muller TFG, Prins S, Malgas GF |
4442 - 4446 |
Silicidation and carburization of the tungsten filament in HWCVD with silacyclobutane precursor gases Shi YJ, Tong L, Eustergerling BD, Li XM |
4447 - 4450 |
Effect of filament temperature and deposition time on the formation of tungsten silicide with silane Sveen CE, Shi YJ |
4451 - 4454 |
Structural changes in tungsten wire and their effect on the properties of hydrogenated nanocrystalline cubic silicon carbide thin films Tabata A, Naito A |
4455 - 4458 |
An alternative method to determine the steady state nucleation rate in thermally annealed HWCVD a-Si:H films Mahan AH, Parilla PA, Moutinho H, To B, Dabney MS, Ginley DS |
4459 - 4461 |
Flash-lamp-crystallized polycrystalline silicon films with high hydrogen concentration formed from Cat-CVD a-Si films Ohdaira K, Tomura N, Ishii S, Matsumura H |
4462 - 4465 |
Thermal annealing of protocrystalline a-Si:H Muller TFG, Arendse CJ, Halindintwali S, Knoesen D, Schropp REI |
4466 - 4468 |
Extremely low recombination velocity on crystalline silicon surfaces realized by low-temperature impurity doping in Cat-CVD technology Hayakawa T, Miyamoto M, Koyama K, Ohdaira K, Matsumura H |
4469 - 4472 |
Ultralow surface recombination in p-Si passivated by catalytic-chemical vapor deposited alumina films Ogita YI, Tachihara M, Aizawa Y, Saito N |
4473 - 4475 |
Excellent passivation effect of Cat-CVD SiNx/i-a-Si stack films on Si substrates Koyama K, Ohdaira K, Matsumura H |
4476 - 4478 |
Comparison of surface passivation of crystalline silicon by a-Si:H with and without atomic hydrogen treatment using hot-wire chemical vapor deposition Schuttauf JWA, van der Werf CHM, van Sark WGJHM, Rath JK, Schropp REI |
4479 - 4482 |
Polymer layers by initiated chemical vapor deposition for thin film gas barrier encapsulation Spee DA, Bakker R, van der Werf CHM, van Steenbergen MJ, Rath JK, Schropp REI |
4483 - 4486 |
Super H2O-barrier film using Cat-CVD (HWCVD)-grown SiCN for film-based electronics Nakayama H, Ito M |
4487 - 4490 |
Evaluation of corrosion resistance of SiCN-coated metals deposited on an NH3-radical-treated substrate Harada T, Nakanishi H, Ogata T, Kadotani Y, Izumi A |
4491 - 4494 |
Electrically active, doped monocrystalline silicon nanoparticles produced by hot wire thermal catalytic pyrolysis Scriba MR, Britton DT, Harting M |
4495 - 4497 |
HWCVD MoO3 nanoparticles and a-Si for next generation Li-ion anodes Dillon AC, Riley LA, Jung YS, Ban C, Molina D, Mahan AH, Cavanagh AS, George SM, Lee SH |
4498 - 4501 |
Size modulation of nanocrystalline silicon embedded in amorphous silicon oxide by Cat-CVD Matsumoto Y, Godavarthi S, Ortega M, Sanchez V, Velumani S, Mallick PS |
4502 - 4505 |
Structural properties of microcrystalline Si films prepared by hot-wire/catalytic chemical vapor deposition under conditions close to the transition from amorphous to microcrystalline growth Niikura C, Cabarrocas PRI, Bouree JE |
4506 - 4510 |
Variation of microstructure and transport properties with filament temperature of HWCVD prepared silicon thin films Gogoi P, Jha HS, Agarwal P |
4511 - 4515 |
Microstructure and electronic properties of microcrystalline silicon carbide thin films prepared by hot-wire CVD Chen T, Kohler F, Heidt A, Huang Y, Finger F, Carius R |
4516 - 4518 |
Aluminum doped silicon carbide thin films prepared by hot-wire CVD: Influence of the substrate temperature on material properties Chen T, Yang DR, Carius R, Finger F |
4519 - 4522 |
Aluminum doped silicon carbide thin films prepared by hot-wire CVD: Investigation of defects with electron spin resonance Xiao LH, Astakhov O, Chen T, Stutzmann M, Finger F |
4523 - 4526 |
Development of microcrystalline silicon carbide window layers by hot-wire CVD and their applications in microcrystalline silicon thin film solar cells Chen T, Huang YL, Yang DR, Carius R, Finger F |
4527 - 4530 |
Amorphous/crystalline silicon heterojunction solar cells with varying i-layer thickness Page MR, Iwaniczko E, Xu YQ, Roybal L, Hasoon F, Wang Q, Crandall RS |
4531 - 4534 |
Hot wire configuration for depositing device grade nano-crystalline silicon at high deposition rate Nos O, Frigeri PA, Bertomeu J |
4535 - 4537 |
N-2 post-deposition treatment on silicon thin films with a hot-wire chemical vapor method at a low wire temperature Omori Y, Tabata A, Kondo A |
4538 - 4541 |
Preparation of SnO2 thin films at low temperatures with H-2 gas by the hot-wire CVD method Natsuhara H, Tatsuyama T, Ushiro M, Furuhashi M, Fujii T, Ohashi F, Yoshida N, Nonomura S |
4542 - 4544 |
Activated gas jet deposition Rebrov AK, Maltsev RV, Safonov AI, Timoshenko NI |
4545 - 4550 |
Hot-wire chemical vapor deposition of epitaxial film crystal silicon for photovoltaics Branz HM, Teplin CW, Romero MJ, Martin IT, Wang Q, Alberi K, Young DL, Stradins P |
4551 - 4554 |
Integration of polymer electrolytes in dye sensitized solar cells by initiated chemical vapor deposition Nejati S, Lau KKS |
4555 - 4560 |
Opportunities for new materials synthesis by hot wire chemical vapor process Dusane RO |
4561 - 4564 |
Hot wire chemical vapour deposition (HWCVD) of boron carbide thin films from ortho-carborane for neutron detection application Chaudhari P, Meshram N, Singh A, Topkar A, Dusane R |
4565 - 4567 |
Low resistivity metal lines formed by functional liquids and successive treatment of catalytically generated hydrogen atoms in the Cat-CVD system Nguyen TTK, Ohdaira K, Shimoda T, Matsumura H |
4568 - 4570 |
Advantage of plasma-less deposition in Cat-CVD to the performance of electronic devices Matsumura H, Hasegawa T, Nishizaki S, Ohdaira K |
4571 - 4573 |
Single-chamber filament-assisted chemical vapor deposition of polymer and organosilicate films for air gap interconnect formation Lee E, Faguet J, Brcka J, Akiyama O, Liu JJ, Toma D |
4574 - 4577 |
Piezoresistive silicon thin film sensor array for biomedical applications Alpuim P, Correia V, Marins ES, Rocha JG, Trindade IG, Lanceros-Mendez S |
4578 - 4581 |
Ion-implanted resist removal using atomic hydrogen Horibe H, Yamamoto M, Maruoka T, Goto Y, Kono A, Nishiyama I, Tagawa S |
4582 - 4584 |
Hydrogen etching of Si3N4 layers with plasma assisted hot wire CVD Kniffler N, Pflueger A, Schulz T, Sommer S, Schroeder B |
4585 - 4588 |
High rate hot-wire chemical vapor deposition of silicon thin films using a stable TaC covered graphite filament Martin IT, Teplin CW, Stradins P, Landry M, Shub M, Reedy RC, To B, Portugal JV, Mariner JT |
4589 - 4593 |
Synthesis of carbon nanowalls by hot-wire chemical vapor deposition Itoh T |
4594 - 4597 |
High-quality single-walled carbon nanotubes synthesis by hot filament CVD on Ru nanoparticle catalyst Bouanis FZ, Baraton L, Huc V, Pribat D, Cojocaru CS |
4598 - 4602 |
Laterally organized carbon nanotube arrays based on hot-filament chemical vapor deposition Kim KH, Lefeuvre E, Chatelet M, Pribat D, Cojocaru CS |
4603 - 4608 |
Optimization of organized silicon nanowires growth inside porous anodic alumina template using hot wire chemical vapor deposition process Lefeuvre E, Kim KH, He ZB, Maurice JL, Chatelet M, Pribat D, Cojocaru CS |
4609 - 4612 |
Silicon nanowire growth on glass substrates using hot wire chemical vapor deposition Meshram NP, Kumbhar A, Dusane RO |
4613 - 4616 |
Vapor-solid-solid Si nano-whiskers growth using pure hydrogen as the source gas Nagayoshi H, Nordmark H, Nishimura S, Terashima K, Marioara CD, Walmsley JC, Holmestad R, Ulyashin A |