5395 - 5398 |
Properties of indium tin oxide films deposited on unheated polymer substrates by ion beam assisted deposition Yu ZN, Li YQ, Xia F, Zhao ZW, Xue W |
5399 - 5403 |
Passivation of pinhole defect microelectrode arrays in ultrathin silica films immobilized on gold substrates Macech P, Pemberton JE |
5404 - 5408 |
Low resistive diamond like carbon film development technique Panosyan ZR, Darbasyan AT, Meliksetyan VA, Voskanyan SS, Voskanyan AS, Sahakyan AA, Gzraryan RV |
5409 - 5414 |
Characterization of thin TiO2 films prepared by plasma enhanced chemical vapour deposition for optical and photocatalytic applications Sobczyk-Guzenda A, Gazicki-Lipman M, Szymanowski H, Kowalski J, Wojciechowski P, Halamus T, Tracz A |
5415 - 5418 |
Influence of the growth conditions on the stoichiometry and on the optical properties of titanium oxide thin films prepared by reactive sputtering Perez-Pacheco A, Prieto C, Castaneda-Guzman R, Garcia-Lopez J |
5419 - 5424 |
Characterization of size-quantized PbTe thin films synthesized by an electrochemical co-deposition method Erdogan IY, Oznuluer T, Bulbul F, Demir U |
5425 - 5430 |
Effect of film thickness and agglomerate size on the superwetting and fog-free characteristics of TiO2 films Law WS, Lam SW, Gan WY, Scott J, Amal R |
5431 - 5434 |
Direct current electrical conduction mechanism in plasma polymerized thin films of tetraethylorthosilicate Zaman M, Bhuiyan AH |
5435 - 5441 |
Electrosynthesis and characterisation of poly(safranine T) electroactive polymer films Pauliukaite R, Selskiene A, Malinauskas A, Brett CMA |
5442 - 5445 |
Optical properties of tungsten oxide thin films by non-reactive sputtering Acosta M, Gonzalez D, Riech I |
5446 - 5452 |
Electrical characteristics of mixed Zr-Si oxide thin films prepared by ion beam induced chemical vapor deposition at room temperature Ferrer FJ, Frutos F, Garcia-Lopez J, Jimenez C, Yubero F |
5453 - 5458 |
Correlating Raman-spectroscopy and high-resolution transmission-electron-microscopy studies of amorphous/nanocrystalline multilayered silicon thin films Gajovic A, Gracin D, Juraic K, Sancho-Parramon J, Ceh M |
5459 - 5463 |
Monoparticulate films of polyaniline Tosheva L, Gospodinova N, Vidal L, Mihai I, Defaux M, Ivanov DA, Doyle AM |
5464 - 5467 |
Characterization of copper oxide nanolayers deposited by direct current magnetron sputtering Rastkar AR, Niknam AR, Shokri B |
5468 - 5473 |
The structure of Si-SiO2 layers with high excess Si content prepared by magnetron sputtering Baran N, Bulakh B, Venger Y, Korsunska N, Khomenkova L, Stara T, Goldstein Y, Savir E, Jedrzejewski J |
5474 - 5481 |
Scanning tunneling microscopy investigations of electropolymerized tetra-arylporphyrin complexes Drouet S, Ballut S, Rault-Berthelot J, Turban P, Paul-Roth C |
5482 - 5488 |
Study of defects and thermal stability of ultrathin Cu films on Ta(110) and Ta(100) by thermal helium desorption spectrometry Venugopal V, Thijsse BJ |
5489 - 5495 |
Ultraviolet-induced surface modification of polyurethane films in the presence of oxygen or acrylic acid vapours Weibel DE, Michels AF, Horowitz F, Cavalheiro RD, Mota GVD |
5496 - 5501 |
Adhesion study of pulsed laser deposited hydroxyapatite coating on laser surface nitrided titanium Man HC, Chiu KY, Cheng FT, Wong KH |
5502 - 5507 |
Electron doping into the surface of SrTiO3 single crystal by using a field effect transistor structure having a polyvinyl alcohol gate insulator layer Sakai M, Seo K, Ohkawa Y, Okuda T |
5508 - 5511 |
Effects of (NH4)(2)S-x treatment on the electrical and optical properties of indium tin oxide/conducting polymer electrodes Lin YJ, Liu BY, Chin YM |
5512 - 5515 |
Ab initio supercell calculations of the (0001) alpha-Cr2O3 surface with a partially or totally Al-substituted external layer Sun JZ, Stirner T |
5516 - 5522 |
Nanostructural, electrical, and tribological properties of composite Au-MoS2 coatings Lince JR, Kim HI, Adams PM, Dickrell DJ, Dugger MT |
5523 - 5529 |
Enhancement of the photoelectrochemical response of poly(terthiophenes) by CdS(ZnS) core-shell nanoparticles Santos MJL, Ferreira J, Radovanovic E, Romano R, Alves OL, Girotto EM |
5530 - 5536 |
Determination of optical constants of thin films from transmittance trace Bhattacharyya SR, Gayen RN, Paul R, Pal AK |
5537 - 5542 |
Characterizations of gallium-doped ZnO films on glass substrate prepared by atmospheric pressure metal-organic chemical vapor deposition Huang YC, Li ZY, Chen HH, Uen WY, Lan SM, Liao SM, Huang YH, Ku CT, Chen MC, Yang TN, Chiang CC |
5543 - 5547 |
Low temperature atomic layer deposition of high-k dielectric stacks for scaled metal-oxide-semiconductor devices Bethge O, Abermann S, Henkel C, Bertagnolli E |
5548 - 5552 |
Reactively sputtered ZrN for application as reflecting back contact in Cu(In,Ga)Se-2 solar cells Schleussner S, Kubart T, Torndahl T, Edoff M |
5553 - 5556 |
Retardance of chalcogenide thin films grown by the oblique-angle-deposition technique Martin-Palma RJ, Zhang F, Lakhtakia A, Cheng A, Xu J, Pantano CG |
5557 - 5562 |
Magnetic instability of giant magnetoresistance spin-valves due to electromigration-induced inter-diffusion Jiang J, Bae S, Ryu H |
5563 - 5568 |
Electrical, optical, and structural properties of InZnSnO electrode films grown by unbalanced radio frequency magnetron sputtering Park HK, Jeong JA, Park YS, Kim HK, Cho WJ |
5569 - 5572 |
Amorphous carbon-silicon heterojunctions by pulsed Nd:YAG laser deposition Yap SS, Yow HK, Tou TY |
5573 - 5575 |
Transparent organic bistable memory devices using a low resistance transparent electrode Yook KS, Lee JY |
5576 - 5579 |
Estimation of oxidation states of AlOx barriers in a tunneling junction by inelastic electron tunneling spectroscopy Horikiri K, Morizumi M, Shiiki K |
5580 - 5583 |
A theoretical investigation on the contrast limitations of dual electrochromic systems Padilla J |
5584 - 5588 |
Binuclear aluminum complex as an efficient orange emitter in single-layer electroluminescent devices Liu XM, Xia H, Ma YG, Mu Y |
5589 - 5592 |
Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses An HM, Seo YJ, Kim HD, Kim KC, Kim JG, Cho WJ, Koh JH, Sung YM, Kim TG |
5593 - 5596 |
Diffusion barrier capability of Zr-Si films for copper metallization with different substrate bias voltage Wang Y, Cao F, Shao L, Ding MH |
5597 - 5600 |
Characterization of self-assembled monolayers by using a near-field microwave scanning microprobe Babajanyan A, Melikyan H, Sargsyan T, Kim S, Kim J, Lee K, Friedman B |