V - V |
Proceedings from the 1st Asian Conference on Chemical Vapour Deposition, May 10-13 1999, Shanghai, China - Preface Zhang DW, Wang JT, Liang JW |
169 - 175 |
Resonance enhanced multiphoton ionization probing of H atoms and CH3 radicals in a hot filament chemical vapour deposition reactor Smith JA, Cook MA, Langford SR, Redman SA, Ashfold MNR |
176 - 180 |
Rates of reactions of H atoms with some CVD precursors Arthur NL, Cooper IA, Czerwinski A, Miles LA |
181 - 184 |
Deposition of a-SiC : H thin film from organosilicon material by remote plasma CVD method Xu YY, Muramatsu T, Taniyama M, Aoki T, Hatanaka Y |
185 - 192 |
Investigations of the gas phase mechanism of diamond deposition in combustion CVD Kohse-Hoinghaus K, Lowe A, Atakan B |
193 - 197 |
Chemical vapor deposition of novel carbon materials Chow L, Zhou D, Hussain A, Kleckley S, Zollinger K, Schulte A, Wang H |
198 - 202 |
Mechanical properties and corrosion studies of amorphous carbon on magnetic disks prepared by ECR plasma technique Fung MK, Lai KH, Chan CY, Bello I, Lee CS, Lee ST, Mao DS, Wang X |
203 - 207 |
Electrodeposition diamond-like carbon films from organic liquids Cao CB, Zhu HS, Wang H |
208 - 210 |
Effects of fluorine addition on driving force for CVD diamond growth Liu ZJ, Ding SJ, Wang PF, Zhang DW, Zhang JY, Wang JT, Kohse-Hoinghaus K |
211 - 215 |
Study of diamond film growth mechanism on porous silicon during hot-filament chemical vapor deposition Liao Y, Ye F, Shao QY, Chang C, Wang GZ, Fang RC |
216 - 221 |
Characterization of elastic properties of hard carbon and boron nitride films using the Brillouin light scattering technique Wittkowski T, Wiehn V, Jorzick J, Jung K, Hillebrands B |
222 - 226 |
Effects at reactive ion etching of CVD diamond Bello I, Fung MK, Zhang WJ, Lai KK, Wang YM, Zhou ZF, Yu RKW, Lee CS, Lee ST |
227 - 230 |
Preparation of SrRuO3 thin film by chemical reactive pulsed laser deposition Fang XD, Tachiki M, Kobayashi T |
231 - 236 |
Development of diamond synthesis techniques at low pressures Matsumoto S |
237 - 240 |
The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition Sun XL, Wang YY, Yang H, Li JB, Zheng LX, Xu DP, Wang ZG |
241 - 243 |
Structure characteristic of buried SiC layers Yan H, Wang B, Song XM, Chen GH, Wong SP, Kwok RWM |
244 - 248 |
ZnSe growth by radical assisted MOCVD using hollow cathode plasma Aoki T, Ikeda T, Korzec D, Hatanaka Y |
249 - 252 |
Epitaxial growth of GaNAs/GaAs heterostructure materials Lin YW, Pan Z, Li LH, Zhou ZQ, Wang H, Zhang W |
253 - 256 |
Projective phase diagrams for CVD diamond growth from C-H and C-H-O systems Liu ZJ, Zhang DW, Wang PF, Ding SJ, Zhang JY, Wang JT, Kohse-Hoinghaus K |
257 - 260 |
Reactive ion beam assisted deposition of a titanium dioxide film on a transparent polyester sheet Ding XZ, Zhang FM, Wang HM, Chen LZ, Liu XH |
261 - 265 |
Comparison of deposition behavior of Pb(Zr,Ti)O-3 films and its end-member-oxide films prepared by MOCVD Funakubo H, Nagashima K, Shinozaki K, Mizutani N |
266 - 268 |
Thermodynamics analyses of the effect of CH3 and C2H2 on morphology of CVD diamond films Zhang JY, Wang PF, Ding SJ, Zhang DW, Wang JT, Liu ZJ |
269 - 274 |
Enhanced diamond film growth by Xe-added microwave plasma CVD Hosomi T, Maki T, Kobayashi T |
275 - 278 |
Aerosol and plasma assisted chemical vapor deposition process for multicomponent oxide Lao(0.8)Sro(0.2)MnO(3) thin film Wang HB, Meng GY, Peng DK |
279 - 282 |
Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition Xu DP, Yang H, Li JB, Li SF, Zhao DG, Wang YT, Sun XL, Wu RH |
283 - 286 |
Microstructure and semiconducting properties of c-BN films using r.f. plasma CVD thermally assisted by a tungsten filament Wang WL, Liao KJ, Wang SX, Sun YW |
287 - 291 |
Experiments and analyses of SiC thin film deposition from organo-silicon by a remote plasma method Hatanaka Y, Sano K, Aoki T, Wrobel AM |
292 - 296 |
Formation of cubic boron nitride films on nickel substrates Zhou ZF, Bello I, Kremnican V, Fung MK, Lai KH, Li KY, Lee CS, Lee ST |
297 - 299 |
CVD diamond thin film for IR optics and X-ray optics Ying XT, Xu XM |
300 - 302 |
Photoconductive properties of ClAlPcCl and ClInPe composite thin film prepared by physical vapor deposition approach Xu MS, Ji ZG, Xu QF, Yuan J, Que DL, Chen HZ, Wang M |
303 - 306 |
Two-step growth of high quality diamond films Liao Y, Chang C, Li CH, Ye ZY, Wang GZ, Fang RC |
307 - 311 |
Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001) Zhu JJ, Liu SY, Liang JW |
312 - 314 |
The growth of cubic boron nitride films by RF reactive sputter Deng JX, Wang B, Tan LW, Yan H, Chen GG |
315 - 318 |
The preparation of nanosized silicon by laser-induced chemical vapour deposition Zhang HY, Wei AX, Liu SH, Wang WX, Chen DH, Liang LH, Chen KX |