6217 - 6217 |
The Sixth Symposium on Thin Films for Large Area Electronics E-MRS 2008 Spring Meeting Preface Schropp REI, Cabarrocas PRI |
6218 - 6224 |
Non-intrusive plasma diagnostics for the deposition of large area thin film silicon Howling AA, Strahm B, Hollenstein C |
6225 - 6229 |
Interpretation of the hydrogen evolution during deposition of microcrystalline silicon by chemical transport Pham N, Hadjadj A, Cabarrocas PRI, Jbara O, Kail F |
6230 - 6233 |
Real-time evaluation of thickness, optical properties and stoichiometry of SiOx gas barrier coatings on polymers Gioti M, Logothetidis S, Schroeder J, Steiniger G |
6234 - 6238 |
An atomic-scale study of hydrogenated silicon cluster deposition on a crystalline silicon surface Ning N, Rinaldi SM, Vach H |
6239 - 6242 |
Characterization of amorphous and nanostructured Si films by differential scanning calorimetry Roura P, Farjas J, Cabarrocas PRI |
6243 - 6247 |
Atomic force microscopy study of TiO2 sol-gel films thermally treated under NH3 atmosphere Trapalis C, Todorova N, Anastasescu M, Anastasescu C, Stoica M, Gartner M, Zaharescu M, Stoica T |
6248 - 6251 |
Model calculation of phototransport properties of minority carriers of fully crystalline undoped mu c-Si:H Ram SK, Kumar S, Cabarrocas PRI |
6252 - 6255 |
Discharge characteristics of plasma display panels with Si-doped MgO protective layers Ram SK, Barik UK, Sarkar S, Biswas P, Singh V, Dwivedi HK, Kumar S |
6256 - 6259 |
Enhanced infrared response of ultra thin amorphous silicon photosensitive devices with Ag nanoparticles Luo PQ, Moulin E, Sukmanowski J, Royer FX, Dou XM, Stiebig H |
6260 - 6263 |
A Monte Carlo investigation of growth and characterization of heteroepitaxial thin films Fazouan N, Atmani E, Rouhani MD, Esteve A |
6264 - 6270 |
X-ray textural and microstructural characterisations by using the Combined Analysis Approach for the optical optimisation of micro- and nano-structured thin films Morales M, Chateigner D, Lutterotti L |
6271 - 6274 |
N-type PTCDI-C13H27 thin-film transistors deposited at different substrate temperature Puigdollers J, Della Pirriera M, Marsal A, Orpella A, Cheylan S, Voz C, Alcubilla R |
6275 - 6279 |
On the influence of silicon oxide nanoparticles on the optical and surface properties of hybrid (inorganic-organic) barrier materials Laskarakis A, Logothetidis S, Georgiou D, Amberg-Schwab S, Weber U |
6280 - 6282 |
Ultraviolet light effect on electrical properties of a flexible organic thin film transistor Lucas B, El Amrani A, Chakaroun M, Ratier B, Antony R, Moliton A |
6283 - 6286 |
Pentacene TFTs with parylene passivation layer Simeone D, Cipolloni S, Mariucci L, Rapisarda M, Minotti A, Pecora A, Cuscuna M, Maiolo L, Fortunato G |
6287 - 6289 |
Optical properties of SnO2:F films deposited by atmospheric pressure CVD Remes Z, Vanecek M, Yates HM, Evans P, Sheel DW |
6290 - 6293 |
Structural and electrical properties of Al doped ZnO thin films deposited at room temperature on poly(vinilidene fluoride) substrates Oliveira C, Rebouta L, de Lacerda-Aroso T, Lanceros-Mendez S, Viseu T, Tavares CJ, Tovar J, Ferdov S, Alves E |
6294 - 6297 |
Electrical and optical properties of 12CaO center dot 7Al(2)O(3) electride doped indium tin oxide thin film deposited by RF magnetron co-sputtering Tai PH, Jung CH, Kang YK, Yoon DH |
6298 - 6300 |
High density plasma treatment of polyimide substrate to improve structural and electrical properties of Ga-doped ZnO films Kwon SI, Lee SJ, Jung TH, Park SB, Park JH, Song WC, Kang IN, Lim DG |
6301 - 6304 |
Polarization dependence of the optical response in SnO2 and the effects from heavily F doping Canestraro CD, Roman LS, Persson C |
6305 - 6309 |
Effect of the annealing temperature on transparency and conductivity of ZnO:Al thin films Ben Ayadi Z, El Mir L, Djessas K, Alaya S |
6310 - 6314 |
Deposition of low-resistivity gallium-doped zinc oxide films by low-temperature radio-frequency magnetron sputtering Tseng JY, Chen YT, Yang MY, Wang CY, Li PC, Yu WC, Hsu YF, Wang SF |
6315 - 6319 |
Reliability analysis of transparent conductive tracks embossed in ZnO and Al-ZnO sol-gel materials Rao J, Winfield RJ, O'Brien S, Crean GM |
6320 - 6322 |
Thin films of In2O3 by atomic layer deposition using In(acac)(3) Nilsen O, Balasundaraprabhu R, Monakhov EV, Muthukumarasamy N, Fjellvag H, Svensson BG |
6323 - 6326 |
Sol-gel synthesis, comparative characterisation, and reliability analyses of undoped and Al-doped zinc oxide thin films Copuroglu M, O'Brien S, Crean GM |
6327 - 6330 |
Chemical deposition of Al2O3 thin films on Si substrates Vitanov P, Harizanova A, Ivanova T, Dimitrova T |
6331 - 6333 |
Excitation mechanism of europium ions embedded into TiO2 nanocrystalline matrix Podhorodecki A, Zatryb G, Sitarek P, Misiewicz J, Kaczmarek D, Domaradzki J, Borkowska A, Prociow EL |
6334 - 6336 |
The role of the HfO2-TiN interface in capacitance-voltage nonlinearity of Metal-Insulator-Metal capacitors Wenger C, Lukosius M, Weidner G, Mussig HJ, Pasko S, Lohe C |
6337 - 6340 |
Improvement of on/off ratio in ZnO thin-film transistor by using growth interruptions during metalorganic chemical vapor deposition Jo J, Choi H, Yun J, Kim H, Seo O, Lee B |
6341 - 6344 |
Stability of indium-oxide thin-film transistors by reactive ion beam assisted deposition Vygranenko Y, Wang K, Chaji R, Vieira M, Robertson J, Nathan A |
6345 - 6348 |
Surface-induced time-dependent instability of ZnO based thin-film transistors Kim KT, Lee K, Oh MS, Park CH, Im S |
6349 - 6352 |
The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor with a plasma-treated source-drain structure Shin HS, Du Ahn B, Kim KH, Park JS, Kim HJ |
6353 - 6357 |
Effective channel length and parasitic resistance determination in non self-aligned low temperature polycrystalline silicon thin film transistors Valletta A, Rapisarda M, Mariucci L, Pecora A, Fortunato G, Caligiore C, Fontana E, Tramontana F, Leonardi S |
6358 - 6363 |
Solid phase epitaxy on N-type polysilicon films formed by aluminium induced crystallization of amorphous silicon Tuzun O, Slaoui A, Roques S, Focsa A, Jomard F, Ballutaud D |
6364 - 6366 |
Back gate influence on front channel operation of p-channel double gate polysilicon TFTs Michalas L, Papaioannou GJ, Kouvatsos DN, Voutsas AT |
6367 - 6370 |
Thermal dependence of low-frequency noise in polysilicon thin film transistors Pichon L, Cretu B, Boukhenoufa A |
6371 - 6374 |
Analysis of self-heating related instability in n-channel polysilicon thin film transistors fabricated on polyimide Maiolo L, Cuscuna M, Mariucci L, Minotti A, Pecora A, Simeone D, Valletta A, Fortunato G |
6375 - 6378 |
On the study of p-channel thin-film transistors fabricated by SLS ELA crystallization techniques Exarchos MA, Moschou DC, Papaioannou GJ, Kouvatsos DN, Arapoyanni A, Voutsas AT |
6379 - 6382 |
Negative bias-temperature stress in non-self-aligned p-channel polysilicon TFTs Mariucci L, Gaucci P, Valletta A, Cuscuna M, Maiolo L, Pecora A, Fortunato G |
6383 - 6385 |
Ambipolar microcrystalline silicon thin-film transistors Chan KY, Kirchhoff J, Gordijn A, Knipp D, Stiebig H |
6386 - 6391 |
Electronic and structural properties of the amorphous/crystalline silicon interface Kleider JP, Chouffot R, Gudovskikh AS, Cabarrocas PRI, Labrune M, Ribeyron PJ, Bruggemann R |
6392 - 6395 |
Correlation of structural and optoelectronic properties of thin film silicon prepared at the transition from microcrystalline to amorphous growth Reynolds S, Carius R, Finger F, Smirnov V |
6396 - 6400 |
Surface photovoltage investigation of recombination at the a-Si/c-Si heterojunction Korte L, Laades A, Lauer K, Stangl R, Schaffarzik D, Schmidt M |
6401 - 6404 |
Ultra-high quality surface passivation of crystalline silicon wafers in large area parallel plate reactor at 40 MHz Damon-Lacoste J, Fesquet L, Olibet S, Ballif C |
6405 - 6408 |
Low-temperature growth of nano-structured silicon thin films on ITO initiated by metal catalysts Alet PJ, Palacin S, Cabarrocas PRI |
6409 - 6413 |
Deposition and characterization of PEDOT/ZnO layers onto PET substrates Garganourakis M, Logothetidis S, Pitsalidis C, Georgiou D, Kassavetis S, Laskarakis A |
6414 - 6417 |
Effect of oxygen pressure of SiOx buffer layer on the electrical properties of GZO film deposited on PET substrate Ahn BD, Ko YG, Oh SH, Song JH, Kim HJ |
6418 - 6421 |
Amorphous silicon twin photodiode structure for differential current measurements Caputo D, de Cesare G, Nascetti A |
6422 - 6425 |
On the fabrication and characterization of amorphous silicon ultra-violet sensor array Caputo D, de Cesare G, Nascetti A, Tucci M |
6426 - 6429 |
a-Si:H p-i-n structures with extreme i-layer thickness Fantoni A, Fernandes M, Vieira M, Casteleiro C, Schwarz R |
6430 - 6434 |
Synthesis of monodisperse CdS nanowires and their photovoltaic applications Xi LF, Tan WXW, Chua KS, Boothroyd C, Lam YM |
6435 - 6439 |
Large area double p-i-n heterostructure for signal multiplexing and demultiplexing in the visible range Vieira M, Louro P, Fernandes M, Vieira MA, Fantoni A, Barata M |