Thin Solid Films

Thin Solid Films, Vol.516, No.5 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (94 articles)

487 - 489	Fourth international conference on hot-wire CVD (Cat-CVD) process -Preface Bouree JE, Mahan AH
490 - 495	Deposition of new microcrystalline materials, mu c-SiC, mu c-GeC by HWCVD and solar cell applications Konagai M
496 - 499	Hot Wire CVD for thin film triple junction cells and for ultrafast deposition of the SiN passivation layer on polycrystalline Si solar cells Schropp REI, Franken RH, Goldbach HD, Houweling ZS, Li H, Rath JK, Schuettauf JWA, Stolk RL, Verlaan V, van der Werf CHM
500 - 502	Future prospect of remote Cat-CVD on the basis of the production, transportation and detection of H atoms Umemoto H, Matsumura H
503 - 505	Evaluation of hydrogen atom density generated on a tungsten mesh surface Miura H, Kuroki Y, Yasui K, Takata M, Akahane T
506 - 510	Mass spectrometric study of gas-phase chemistry in the hot-wire CVD processes of SiH4/NH3 mixtures Shi YJ, Eustergerling BD, Li XM
511 - 516	Hot-wire deposition of a-Si : H thin films on wafer substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy van den Oever PJ, Gielis JJH, de Sanden MCMV, Kessels WMM
517 - 520	UV-visible absorption spectra of silicon CVD intermediates Nakamura S, Matsugi A, Susa A, Koshi M
521 - 525	Filament seasoning and its effect on the chemistry prevailing in hot filament activated gas mixtures used in diamond chemical vapour deposition Comerford DW, D'Haenens-Johansson UFS, Smith JA, Ashfold MNR, Mankelevich YA
526 - 528	Film stoichiometry and gas dissociation kinetics in hot-wire chemical vapor deposition of a-SiGe : H Doyle JR, Xu Y, Reedy R, Branz HM, Mahan AH
529 - 532	A comparison of grain nucleation and grain growth during crystallization of HWCVD and PECVD a-Si : H films Mahan AH, Ahrenkiel SP, Schropp REI, Li H, Ginley DS
533 - 536	Deposition of device quality silicon nitride with ultra high deposition rate (> 7 nm/s) using hot-wire CVD Verlaan V, Houweling ZS, van der Werf CHM, Romijn IG, Weeber AW, Goldbach HD, Schropp REI
537 - 540	Recent situation of industrial implementation of Cat-CVD technology in Japan Matsumura H, Ohdaira K
541 - 544	ULVAC research and development of Cat-CVD applications Asari S, Fujinaga T, Takagi M, Hashimoto M, Saito K, Harada M, Ishikawa M
545 - 547	AlGaN/GaN HEMTs passivated by Cat-CVD SiN film Oku T, Kamo Y, Totsuka M
548 - 552	GaN-based FETs using Cat-CVD SiN passivation for millimeter-wave applications Higashiwaki M, Mimura T, Matsui T
553 - 557	Cat-CVD SiN passivation films for OLEDs and packaging Heya A, Minamikawa T, Niki T, Minami S, Masuda A, Umemoto H, Matsuo N, Matsumura H
558 - 563	An organic catalytic CVD: Principle, apparatus and applications Hata T, Nakayama H
564 - 567	Comparison of growth mechanisms of silicon thin films prepared by HWCVD with PECVD Zhou YQ, Zhou BQ, Gu JH, Zhu MF, Liu FZ
568 - 571	Improved transport properties of microcrystalline silicon films grown by HWCVD with a variable hydrogen dilution process Niikura C, Brenot R, Guillet J, Bouree JE
572 - 575	Photo-carrier transport in micro crystalline silicon films prepared by hot-wire CVD Murata K, Shimakawa K, Takai Y, Itoh T
576 - 579	Phosphorous and boron doping of nc-Si : H thin films deposited on plastic substrates at 150 degrees C by Hot-Wire Chemical Vapor Deposition Filonovich SA, Ribeiro M, Rolo AG, Alpulm P
580 - 583	Electrical properties/Doping efficiency of doped microcrystalline silicon layers prepared by hot-wire chemical vapor deposition Kumar P, Schroeder B
584 - 587	Nanocrystalline silicon thin films on PEN substrates Villar F, Escarre J, Antony A, Stella M, Rojas F, Asensi JM, Bertomeu J, Andreu J
588 - 592	Localized oxidation influence from conductive atomic force microscope measurement on nano-scale I-V characterization of silicon thin film solar cells Shen ZH, Eguchi M, Gotoh T, Yoshida N, Roh T, Nonornura S
593 - 596	Wide optical bandgap p-type mu c-Si : O-x : H prepared by Cat-CVD and comparisons to p-type mu c-Si : H Matsumoto Y, Sdnchez V, Avila A
597 - 599	Electronic properties of low temperature epitaxial silicon thin film photovoltaic devices grown by HWCVD Richardson CE, Langeland K, Atwater HA
600 - 603	Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films Ohdaira K, Abe Y, Fukuda M, Nishizaki S, Usami N, Nakajima K, Karasawa T, Torikai T, Matsumura H
604 - 606	Formation of gas barrier films by Cat-CVD method using organic silicon compounds Oyaidu T, Ogawa Y, Tsurumaki K, Ohdaira K, Matsumura H
607 - 610	Estimation of moisture barrier ability of thin SiNx single layer on polymer substrates prepared by Cat-CVD method Saitoh K, Kumar RS, Chua S, Masuda A, Matsumura H
611 - 614	Protection of organic light-emitting diodes over 50000 hours by Cat-CVD SiNx/SiOxNy stacked thin films Ogawa Y, Ohdaira K, Oyaidu T, Matsumura H
615 - 617	Effect of hydrogen on SiNx films deposited by Cat-CVD method Fujinaga T, Takagi M, Hashimoto M, Asari S, Saito K
618 - 621	Microstructure of highly crystalline silicon carbide thin films grown by HWCVD technique Dasgupta A, Klein S, Houben L, Carius R, Finger F, Luysberg M
622 - 625	Effect of filament and substrate temperatures on the structural and electrical properties of SiC thin films grown by the HWCVD technique Dasgupta A, Huang Y, Houben L, Klein S, Finger F, Carius R, Luysberg M
626 - 629	Structural changes of hot-wire CVD silicon carbide thin films induced by gas flow rates Tabata A, Mori M
630 - 632	Electronic properties of low temperature microcrystalline silicon carbide prepared by Hot Wire CVD Klein S, Dasgupta A, Finger F, Carius R, Bronger T
633 - 636	Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H-2 system Komura Y, Tabata A, Narita T, Kondo A
637 - 640	Characterization of polycrystalline SiC films grown by HW-CVD using silicon tetrafluoride Abe K, Nagasaka Y, Kida T, Yamakami T, Hayashibe R, Kamimura K
641 - 643	Properties of hetero-structured SiCX films deposited by hot-wire CVD using SiH3CH3 as carbon source Itoh T, Kawasaki T, Takai Y, Yoshida N, Nonomura S
644 - 647	SiCOI structure fabricated by catalytic chemical vapor deposition Yasui K, Miura H, Takata M, Akahane T
648 - 651	XPS study of carbon nitride films deposited by hot filament chemical vapor deposition using carbon filament Aono M, Aizawa S, Kitazawa N, Watanabe Y
652 - 655	Effect of thermal annealing on the properties of a-SiCN : H films by hot wire chemical vapor deposition using hexamethyldisilazane Limmanee A, Otsubo M, Sugiura T, Sato T, Miyajima S, Yamada A, Konagai M
656 - 658	Evaluation of corrosion resistance of SiCN films deposited by HWCVD using organic liquid materials Nakayamada T, Matsuo K, Hayashi Y, Izumi A, Kadotani Y
659 - 662	Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD Tamura K, Kuroki Y, Yasui K, Suemitsu M, Ito T, Endou T, Nakazawa H, Narita Y, Takata M, Akahane T
663 - 669	Defect analysis of thin film Si-based alloys deposited by hot-wire CVD using junction capacitance methods Cohen JD, Datta S, Palinginis K, Mahan AH, Iwaniczko E, Xu YQ, Branz HM
670 - 673	Properties of nanocrystalline SiC : Ge : H alloy deposited by hot-wire chemical vapor deposition using Organosilane and Organogermane Miyajima S, Yashiki Y, Yamada A, Konagai M
674 - 677	Applying HWCVD to particle coatings and modeling the deposition mechanism Lau KKS, Gleason KK
678 - 680	Initiated chemical vapor deposition (iCVD) of copolymer thin films Lau KKS, Gleason KK
681 - 683	Combinatorial initiated chemical vapor deposition (iCVD) for polymer thin film discovery Martin TP, Chan K, Gleason KK
684 - 686	Initiated chemical vapor deposition of biopassivation coatings O'Shaughnessy WS, Edell DJ, Gleason KK
687 - 690	Fabrication of PTFE thin films by dual catalytic chemical vapor deposition method Yasuoka H, Yoshida M, Sugita K, Ohdaira K, Murata H, Matsumura H
691 - 695	HFCVD diamond nucleation and growth on polycrystalline copper: A kinetic study Constant L, Le Normand F
696 - 699	Wide area polycrystalline diamond coating and stress control by sp(3) hot filament CVD reactor Zimmer JW, Chandler G, Sharda T
700 - 705	Hot-filament CVD synthesis and application of carbon nanostructures Lee S, Choi S, Park KH, Chae KW, Bin Cho J, Ahn Y, Park JY, Koh KH
706 - 709	Growth of vertically aligned arrays of carbon nanotubes for high field emission Kim D, Lim SH, Guilley AJ, Cojocaru CS, Bouree JE, Vila L, Ryu JH, Park KC, Jang J
710 - 713	Effect of hydrogen dilution in preparation of carbon nanowall by hot-wire CVD Shimabukuro S, Hatakeyama Y, Takeuchi M, Itoh T, Nonomura S
714 - 717	Preparation of carbon microcoils by catalytic methane hot-wire CVD process Chen XQ, Hasegawa M, Yang SM, Nitta Y, Katsuno T, Motojima S
718 - 721	Preparation of single-helix carbon microcoils by catalytic CVD process Yang SM, Ozeki I, Chen X, Katsuno T, Motojima S
722 - 727	Recent contributions of the Kaiserslautern research group to thin silicon solar cell R&D applying the HW(Cat)CVD Schroeder B, Kupich M, Kumar P, Grunsky D
728 - 732	High efficiency microcrystalline silicon solar cells with Hot-Wire CVD buffer layer Finger F, Mai Y, Klein S, Carius R
733 - 735	Stability of microcrystalline silicon solar cells with HWCVD buffer layer Wang Y, Geng X, Stiebig H, Finger F
736 - 739	Improvement of the efficiency of triple junction n-i-p solar cells with hot-wire CVD proto- and microcrystalline silicon absorber layers Stolk RL, Li H, Franken RH, Schuttauf JWA, van der Werf CHM, Rath JK, Schropp REI
740 - 742	Applications of microcrystalline hydrogenated cubic silicon carbide for amorphous silicon thin film solar cells Ogawa S, Okabe M, Ikeda Y, Itoh T, Yoshida N, Nonomura S
743 - 746	Recent advances in hot-wire CVD R&D at NREL: From 18% silicon heterojunction cells to silicon epitaxy at glass-compatible temperatures Branz HM, Teplin CW, Young DL, Page MR, Iwaniczko E, Roybal L, Bauer R, Mahan AH, Xu Y, Stradins P, Wang T, Wang Q
747 - 750	Fabrication and characteristics of n-Si/c-Si/p-Si heterojunction solar cells using hot-wire CVD Lien SY, Wu BR, Liu JC, Wu DS
751 - 754	Low temperature (< 100 degrees C) fabrication of thin film silicon solar cells by HWCVD Rath JK, de Jong M, Schropp REI
755 - 757	Improvement of mu c-Si : H n-i-p cell efficiency with an i-layer made by hot-wire CVD by reverse H-2-profiling Li H, Franken RH, Stolk RL, van der Werf CHM, Rath JK, Schropp REI
758 - 760	Amorphous Si1-xCx : H films prepared by hot-wire CVD using SiH3CH3 and SiH4 mixture gas and its application to window layer for silicon thin film solar cells Ogawa S, Okabe M, Itoh T, Yoshida N, Nonomura S
761 - 764	Progress in a-Si : H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 degrees C Munoz D, Voz C, Martin I, Orpella A, Puigdollers J, Alcubilla R, Villar F, Bertomeu J, Andreu J, Damon-Lacoste J, Cabarrocas PRI
765 - 769	Hot-wire CVD deposited n-type mu c-Si films for mu c-Si/c-Si heterojunction solar cell applications Lien SY, Wuu DS, Wu BR, Horng RH, Tseng MC, Yu HH
770 - 772	Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric Tiwari SP, Sninivas P, Shriram S, Kale NS, Mhaisalkar SG, Rao VR
773 - 778	Application of Cat-CVD for ULSI technology Akasaka Y
779 - 784	Hot wire chemical vapor processing (HWCVP) - A prospective tool for VLSI Dusane RO
785 - 788	Maintaining Cu metal integrity on low-k IMDs with a nanometer thick a-SiC : H film obtained by HWCVD Singh SK, Kumbhar AA, Dusane RO
789 - 793	Developments in hot-filament metal oxide deposition (HFMOD) Durrant SF, Trasferetti BC, Scanninio J, Davanzo CU, Rouxinol FPM, Gelamo RV, de Moraes MAB
794 - 797	Metal oxide nano-particles for improved electrochromic and lithium-ion battery technologies Dillon AC, Mahan AH, Deshpande R, Parilla R, Jones KM, Lee SH
798 - 802	Synthesis of nanometal oxides and nanometals using hot-wire and thermal CVD Mitra S, Sridharan K, Unnam J, Ghosh K
803 - 806	Characterization of Si : O : C : H films fabricated using electron emission enhanced chemical vapour deposition Durrant SF, Rouxinol FPM, Gelamo RV, Transferetti BC, Davanzo CU, De Moraes MAB
807 - 809	TiO2 thin films using organic liquid materials prepared by Hot-Wire CVD method Iida T, Takamido Y, Kunii T, Ogawa S, Mizuno K, Narita T, Yoshida N, Itoh T, Nonomura S
810 - 813	Ion beam modification of TiO2 films prepared by Cat-CVD for solar cell Narita T, Iid T, Ogawa S, Mizuno K, So J, Kondo A, Yoshida N, Itoh T, Nonomura S, Tanaka Y
814 - 817	Hot Ta filament resistance in-situ monitoring under silane containing atmosphere Grunsk D, Schroeder B
818 - 821	Investigation of silicon contamination of Ta filaments used for thin film silicon deposition Grunski D, Schroeder B, Scheib M, Merz RM, Bock W, Wagner C
822 - 825	Extension of the lifetime of tantalum filaments in the hot-wire (Cat) chemical vapor deposition process Knoesen D, Arendse C, Halindintwali S, Muller T
826 - 828	A novel method for suppressing silicidation of tungsten catalyzer during silane decomposition in Cat-CVD Honda K, Ohdaira K, Matsumura H
829 - 831	Catalytic CVD processes of oxidizing species and the prevention of oxidization of heated tungsten filaments by H-2 Umemoto H, Ansari SG, MoriMoto T, Setoguchi S, Uemura H, Matsumura H
832 - 835	Composition of alumina films grown on Si at low temperature with catalytic CVD Ogita YL, Kudoh T, Sakamoto F
836 - 838	Electrical properties of alumina films grown on Si at low temperature using catalytic CVD Ogita YI, Ohsone S, Kudoh T, Sakamoto F
839 - 843	Cleaning technology for EUV multilayer mirror using atomic hydrogen generated with hot wire Motai K, Oizumi H, Miyagaki S, Nishiyama I, Izumi A, Ueno T, Namiki A
844 - 846	Hot-wire synthesis of Si nanoparticles Scriba MR, Arendse C, Harting M, Britton DT
847 - 849	Photoresist removal process by hydrogen radicals generated by W catalyst Takata M, Ogushi K, Yuba Y, Akasaka Y, Tomioka K, Soda E, Kobayashi N
850 - 852	Aluminum-induced in situ crystallization of HWCVD a-Si : H films Gupta S, Chelawat H, Kumbhar AA, Adhikari S, Dusane RO
853 - 855	Reduction of oxide layer on various metal surfaces by atomic hydrogen treatment Izumi A, Ueno T, Miyazaki Y, Oizumi H, Nishiyama I
856 - 858	Desorption process of copper chlorides from copper surface Hibi A, Susa A, Koshi M
859 - 862	Selective-catalyst formation for carbon nanotube growth by local indentation pressure Yasui T, Nakai Y, Onozuka Y