Journal of Crystal Growth

Journal of Crystal Growth, Vol.237 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (433 articles)

1 - 7	First-principle calculations for mechanisms of semiconductor epitaxial growth Oshiyama A
8 - 13	Applications of morphological stability theory Coriell SR, McFadden GB
14 - 20	Statistical mechanics of vicinal surface with adsorption Akutsu N, Akutsu Y, Yamamoto T
21 - 27	Metal adsorption induced faceting on a Si(h h m) surface where m/h=1.4-1.5 Minoda H
28 - 34	Step dynamics on growing silicon surfaces observed by ultrahigh vacuum scanning electron microscopy Homma Y, Finnie P
35 - 38	In situ observation of initial homoepitaxial growth on the Si(111) 7 x 7 surface using scanning tunnelling microscopy Shimada W, Tochihara H
39 - 42	Non-equilibrium shape of two-dimensional islands: kinetic modeling of morphological changes Balykov LN, Kitamura M, Maksimov IL
43 - 46	Step bunching induced by drift of adatoms with anisotropic surface diffusion Sato M, Uwaha M, Saito Y
47 - 50	Sound-induced melting of solid He-4 in a superfluid Okumura Y, Maekawa M, Suzuki Y, Nomura R, Okuda Y
51 - 54	Effective distribution coefficients and growth rates of a binary dilute solid solution controlled by kink kinetics and volume diffusion Matsumoto N, Kitamura M
55 - 59	Rapid formation of nanocrystalline apatite Sarig S, Kahana F
60 - 64	Crystal growth kinetics of pentacadmium dihydrogen tetrakis(phosphate) tetrahydrate in solution at 37 degrees C Madsen HEL, Christensen BT
65 - 69	Transport-kinetical phenomena in nanotube growth Louchev OA
70 - 75	The study of impurities effect on the growth and nucleation kinetics of potassium dihydrogen phosphate Podder J
76 - 80	Meta-stable condensation induced by collisions with rare-gas atoms at a substrate surface from a plasma Imamura N, Sakaguchi J, Asatani S, Hashiguchi S, Obara K
81 - 85	Effects of gravity on pattern formation in directional growth of ice crystals Nagashima K, Furukawa Y
86 - 89	Habit changes of NaBrO3 crystals grown from aqueous solution doped with sodium acetate Sone M, Inoue T, Yanagiya S, Mori A
90 - 94	Influence of the growth rate on the microstructure of a Nb-Al-Ni ternary eutectic Rios CT, Milenkovic S, Gama S, Caram R
95 - 100	Effect of the growth parameters on the Ni-Ni3Si eutectic microstructure Milenkovic S, Caram R
101 - 105	Heterogeneous 2D nucleation-induced surface instability Liu XY
106 - 110	Pattern formation and transformation by self-epitaxial nucleation and growth Liu XY
111 - 115	Striped phases in thin layers: simulation and observation van der Eerden JPJM, Snel MME, Makkinje J, van Dijk ADJ, Rinia HA
116 - 120	Theoretical investigations of thermodynamic stability for Si1-x-yGexCy Ito T, Kangawa Y
121 - 124	Theoretical investigation of migration of group V adatoms on GaAs(001) surface Seino K, Ishii A, Aisaka T
125 - 131	Phase-field model of dendritic growth Suzuki T, Ode M, Kim SG, Kim WT
132 - 137	Pattern formation in the crystallization of ascorbic acid Uesaka H, Kobayashi R
138 - 143	Phase field modeling of shallow cells during directional solidification of a binary alloy Bi ZQ, Sekerka RF
144 - 148	Phase field model for phase transformations of multi-phase and multi-component alloys Sakai K
149 - 153	History effects during the selection of primary dendrite spacing. Comparison of phase-field simulations with experimental observations Diepers HJ, Ma D, Steinbach I
154 - 158	2D and 3D phase-field simulations of lamella and fibrous eutectic growth Apel M, Boettger B, Diepers HJ, Steinbach I
159 - 163	A coupled map lattice model for dendrite in diffusion field Ohtaki M, Honjo H, Sakaguchi H
164 - 168	Curvature evolution of interface in two-dimensional ice crystals Maruyama M, Kawabata K
169 - 173	Tip-sticking probability and the branching distribution of a fractal pattern in a diffusion field Sakamoto A, Ohta S
174 - 177	Simulation on the instability of a solid-liquid interface from a molar flux with a diffuse interface layer Kotake S
178 - 180	Feedback control of morphological instability Savina TV, Nepomnyashchy AA, Brandon S, Golovin AA, Lewin DR
181 - 187	The stability of triangular'droplet' phases on Si(111) Hannon JB, Tersoff J, Tromp RM
188 - 191	Cross-sectional HRTEM study of Si(5512) reconstructed surface Liu JL, Takeguchi M, Yasuda H, Furuya K
192 - 195	Surface structure changes associated with Ga diffusion on Si(111)7 x 7 surface Onodera T, Ichikawa T, Mizoguchi A
196 - 200	Extreme band bending at MBE-grown InAs(001) surfaces induced by in situ sulphur passivation Lowe MJ, Veal TD, McConville CF, Bell GR, Tsukamoto S, Koguchi N
201 - 205	Nanoscale faceting of a NaCl(110) homoepitaxial layer Sugawara A, Mae K
206 - 211	First principles and macroscopic theories of semiconductor epitaxial growth Shiraishi K, Oyama N, Okajima K, Miyagishima N, Takeda K, Yamaguchi H, Ito T, Ohno T
212 - 216	Adsorption, diffusion and desorption of Cl atoms on Si(111) surfaces Sakurai S, Nakayama T
217 - 222	Plasma sputtering of silicon dioxide substrate by low energy Ar ion bombardment: molecular dynamics simulation Kim DH, Lee SY, Kim DH
223 - 226	Empirical interatomic potential calculations for relative stability of Ga adatom on GaAs(100) and (n11)A surfaces Kangawa Y, Ito T, Taguchi A, Shiraishi K, Ohachi T
227 - 233	Nanostructures formation and optical properties of II-VI semiconductor compounds Mariette H, Marsal L, Besombes L, Tinjod F, Gilles B, Kheng K, Rouviere JL
234 - 238	Phase diagrams in nanometer-sized alloy systems Yasuda H, Mori H
239 - 243	Improved size control of InP nanopyramids by selective-area flow rate modulation epitaxy Oga R, Yamamoto S, Ohzawa I, Fujiwara Y, Takeda Y
244 - 248	Heteroepitaxial growth of alkali halide solid solution on GaAs(100) Kiguchi M, Saiki K, Koma A
249 - 253	TEM observation of beta-FeSi2(110),(101)/Si(111) layers grown by reactive deposition epitaxy in the presence of an Sb flux Arakawa T, Shao G, Makiuchi S, Ono T, Tatsuoka H, Kuwabara H
254 - 258	In-situ observation of Pd2Si islands on Si by UHV-TEM/STM Tanaka M, Takeguchi M, Furuya K
259 - 263	Defect density in non-selective and selective Si/SiGe structures Menon C, Bentzen A, Landgren G, Radamson HH
264 - 268	Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD Marmalyuk AA, Govorkov OI, Petrovsky AV, Nikitin DB, Padalitsa AA, Bulaev PV, Budkin IV, Zalevsky ID
269 - 273	Atomic and electronic structure of the LiF/LiBr(001) interface Katayama M, Kiguchi M, Saiki K, Koma A
274 - 277	Characterization of MBE grown GaAs/AlGaAs heterointerfaces with photoluminescence from quantum wells Harima N, Nelson JT, Ohachi T
278 - 282	The surface and domain structure of NbTe2 Cukjati D, Prodan A, Jug N, van Midden HJP, Starowicz P, Karic E, Hla SW, Bohm H, Boswell FW, Bennett JC
283 - 288	Polyhedral (in-)stability of protein crystals Nanev CN, Penkova AN
289 - 294	pH-dependent oligomerization of BPTI in undersaturated and supersaturated solutions studied by dynamic light scattering Tanaka S, Ataka M, Onuma K, Astier JP, Veesler S
295 - 299	Systematic analysis of the effect of supersaturation on protein crystal quality Yoshizaki I, Nakamura H, Sato T, Igarashi N, Komatsu H, Yoda S
300 - 305	Morphological evaluation of the gamma-polymorph of indomethacin Slavin PA, Sheen DB, Shepherd EEA, Sherwood JN, Feeder N, Docherty R, Milojevic S
306 - 311	Crystal growth of macromolecular crystals: correlation between crystal symmetry and growth mechanisms Plomp M, McPherson A, Malkin AJ
312 - 316	Damping of natural convection in the aqueous protein solutions by the application of high magnetic fields Wang LB, Zhong CW, Wakayama NI
317 - 323	Microscopic strain analysis of semiconductor crystals using a synchrotron X-ray microbeam Matsui J, Tsusaka Y, Yokoyama K, Takeda S, Urakawa M, Kagoshima Y, Kimura S
324 - 329	Characterization of silicon-on-insulator wafers by photoluminescence under UV light excitation Tajima M
330 - 337	X-ray CTR scattering and interference for atomic-scale characterization of semiconductor heterostructures Takeda Y, Tabuchi M
338 - 344	The morphology of grown-in defects in nitrogen-doped silicon crystals Fujimori H, Fujisawa H, Hirano Y, Okabe T
345 - 349	Analysis of silicon incorporation into VGF-grown GaAs Birkmann B, Weingartner R, Wellmann P, Wiedemann B, Muller G
350 - 355	Synchrotron X-ray topography of undoped VCz GaAs crystals Tuomi T, Knuuttila L, Riikonen J, McNally PJ, Chen WM, Kanatharana J, Neubert M, Rudolph P
356 - 360	Lateral photovoltage scanning (LPS) method for the visualization of the solid-liquid interface of Si1-xGex single crystals Abrosimov NV, Ludge A, Riemann H, Schroder W
361 - 366	Characterization of trap levels in long-duration phosphor crystals Katsumata T, Toyomane S, Tonegawa A, Kanai Y, Kaneyama U, Shakuno K, Sakai R, Komuro S, Morikawa T
367 - 372	Ultrahigh-purity aluminum single crystals with a low dislocation density grown by strain-annealing method Mizuno K, Yamamoto S, Okamoto H, Kuga M, Hashimoto E
373 - 378	Polytypic transformation during crystal growth monitored by newly developed micro-FTIR system for three-dimensional structural studies Kubota H, Kaneko F, Kawaguchi T, Kawasaki M
379 - 382	Self-preservation effect and dissociation rates of CH4 hydrate Takeya S, Ebinuma T, Uchida T, Nagao J, Narita H
383 - 387	CO2 hydrate film formation at the boundary between CO2 and water: effects of temperature, pressure and additives on the formation rate Uchida T, Ikeda IY, Takeya S, Ebinuma T, Nagao J, Narita H
388 - 392	In situ transmission and reflection electron microscopy studies of palladium silicide islands grown on silicon (111) surface Takeguchi M, Liu J, Zhang Q, Tanaka M, Yasuda H, Furuya K
393 - 397	Spectro-ellipsometric monitoring and characterization of the growth of Si/Si1-xGex multiple quantum wells Akazawa H
398 - 402	Real-time observation of surface morphology of indium phosphide MOVPE growth with using X-ray reflectivity technique Kawamura T, Watanabe Y, Fujikawa S, Bhunia S, Uchida K, Matsui J, Kagoshima Y, Tsusaka Y
403 - 407	Study of voltage changes at interface during growth of beta-BaB2O4 crystals and possibilities for improving their quality by an external potential Tyurikov VI, Tsvetkov EG
408 - 413	Crystal growth of sodium oxalate from aqueous solution Lowe J, Ogden M, McKinnon A, Parkinson G
414 - 418	Induction time and three-electrode current vs. voltage characteristics for electrical nucleation of concentrated solutions of sodium acetate trihydrate Yoshii Y, Kuraoka M, Sengoku K, Ohachi T
419 - 423	Formation process of calcium carbonate from highly supersaturated solution Kawano J, Shimobayashi N, Kitamura M, Shinoda K, Aikawa N
424 - 429	Investigation into the effect of phosphonate inhibitors on barium sulfate precipitation Jones F, Oliveira A, Rohl AL, Parkinson GM, Ogden MI, Reyhani MM
430 - 437	Defects in epitaxially grown perovskite thin films Fujimoto M
438 - 442	Characterization of Ba(Zr0.2Ti0.8)O-3 thin films deposited by RF-magnetron sputtering Choi WS, Jang BS, Lim DG, Yi J, Hong B
443 - 447	Preparation of BaxSr1-xTiO3 thin films with seeding layer by a sol-gel method Wei Z, Xu H, Noda M, Okuyama M
448 - 454	Growth of ferroelectric PbZrxTi1-xO3 thin films by metalorganic chemical vapor deposition (MOCVD) Shimizu M, Fujisawa H, Niu H, Honda K
455 - 458	Composition dependence of ferroelectric properties of epitaxial Pb(ZrxTi1-x)O-3 thin films grown by metalorganic chemical vapor deposition Oikawa T, Aratani M, Saito K, Funakubo H
459 - 463	Observations of initial growth stage of epitaxial Pb(Zr,Ti)O-3 thin films on SrTiO3(100) substrate by MOCVD Fujisawa H, Nonomura H, Shimizu M, Niu H
464 - 467	Domain structures in epitaxial Pb(Zr-0.68,Ti-0.32)O-3 thin films Saito K, Oikawa T, Yamaji I, Akai T, Funakubo H
468 - 472	Structural, morphology and electrical studies on ferroelectric bismuth titanate thin films prepared by sol-gel technique Giridharan NV, Madeswaran S, Jayavel R
473 - 477	Preparation of SrBi2(Ta0.7Nb0.3)(2)O-9-Bi3TaTiO9 solid solution films by MOCVD and their properties Mitsuya M, Osada M, Saito K, Funakubo H
478 - 481	Preparation and characterization of Bi4Ti3O12-SrBi4Ti4O15 ferroelectric thin films by pulsed laser deposition Noda M, Nakaiso T, Takarabe K, Kodama K, Okuyama M
482 - 486	Preparation and orientation control of RMnO3 (R = Y, Yb) thin film by chemical solution deposition Suzuki K, Nishizawa K, Miki T, Kato K
487 - 491	Growth process and interfacial structure of epitaxial Y2O3/Si thin films deposited by pulsed laser deposition Kakuno K, Ito D, Fujimura N, Matsui T, Ito T
492 - 495	X-ray study of the surface morphology of crystalline and amorphous tantalum peroxide thin films prepared by RF magnetron sputtering Huang TW, Lee HY, Hsieh YW, Lee CH
496 - 502	Near-UV emitting diodes based on a transparent p-n Junction composed of heteroepitaxially grown p-SrCu2O2 and n-Zno Hosono H, Ohta H, Hayashi K, Orita M, Hirano M
503 - 508	Growth of N-doped and Ga plus N-codoped ZnO films by radical source molecular beam epitaxy Nakahara K, Takasu H, Fons P, Yamada A, Iwata K, Matsubara K, Hunger R, Niki S
509 - 513	Crystal growth of ZnO Oka K, Shibata H, Kashiwaya S
514 - 517	Spatial composition fluctuations in blue-luminescent ZnCdO semiconductor films grown by molecular beam epitaxy Sakurai K, Takagi T, Kubo T, Kajita D, Tanabe T, Takasu H, Fujita S, Fujita S
518 - 522	CdO epitaxial layers grown on (001) GaAs surfaces by metalorganic molecular-beam epitaxy Ashrafi ABMA, Kumano H, Suemune I, Ok YW, Seong TY
523 - 527	Piezoelectric and optical properties of ZnO films deposited by an electron-cyclotron-resonance sputtering system Kadota M, Miura T, Minakata M
528 - 532	Metalorganic molecular beam epitaxy of ZnO using DEZn and H2O precursors Shirakata S, Saeki K, Terasako T
533 - 537	Electro-optic property of ZnO : X (X = Li,Mg) thin films Nagata T, Shimura T, Ashida A, Fujimura N, Ito T
538 - 543	Growth and characterization of Ga-doped ZnO layers on a-plane sapphire substrates grown by molecular beam epitaxy Kato H, Sano M, Miyamoto K, Yao T
544 - 547	Epitaxial growth and optoelectronic properties of nitrogen-doped ZnO films on (11(2)over-bar-0) Al2O3 substrate Guo XL, Tabata H, Kawai T
548 - 552	Optical and electrical properties of Co-doped epitaxial ZnO films Jin ZW, Fukumura T, Hasegawa K, Yoo YZ, Ando K, Sekiguchi T, Ahmet P, Chikyow T, Hasegawa T, Koinuma H, Kawasaki M
553 - 557	ZnO growth using homoepitaxial technique on sapphire and Si substrates by metalorganic vapor phase epitaxy Ogata K, Kawanishi T, Maejima K, Sakurai K, Fujita S, Fujita S
558 - 563	Fabrication of epitaxial In2O3(ZnO)(5) thin films by RF sputtering and their characterization by X-ray and electron diffraction techniques Ohashi N, Ogino T, Sakaguchi I, Hishita S, Komatsu M, Takenaka T, Haneda H
564 - 568	Preparation and characterization of nanosized ZnO arrays by electrophoretic deposition Wang YC, Leu IC, Hon MH
569 - 573	Characterization of epitaxial TiO2 films prepared by pulsed laser deposition Yamamoto S, Sumita T, Yamaki T, Miyashita A, Naramoto H
574 - 579	Preparation of epitaxial TiO2 films by PLD for photocatalyst applications Yamaki T, Sumita T, Yamamoto S, Miyashita A
580 - 585	Crystallization of amorphous alumina films induced by high-energy ion irradiation Nakao S, Jin P, Xu G, Ikeyama M, Miyagawa Y, Miyagawa S
586 - 590	MOCVD precursors for Ta- and Hf-compound films Machida H, Hoshino A, Suzuki T, Ogura A, Ohshita Y
591 - 595	Room-temperature epitaxial growth of NiO(111) thin films by pulsed laser deposition Kakehi Y, Nakao S, Satoh K, Kusaka T
596 - 601	Lithium niobate films on periodic poled lithium niobate substrates prepared by liquid phase epitaxy Callejo D, Bermudez V, Serrano MD, Dieguez E
602 - 607	Liquid phase epitaxy of KTiOPO4 on KTi1-xGexOPO4 substrates Sole R, Nikolov V, Vilalta A, Carvajal JJ, Massons J, Gavalda J, Aguilo M, Diaz F
608 - 611	Epitaxial growth of oxide films (La-Ca-Mn-0 and Y-Ba-Cu-O) by the facing-target sputtering technique Zhao K, Zhou LZ, Leung CH, Yeung CF, Fung CK, Wong HK
612 - 615	Sol-gel growth of LiCoO2 films on Si substrates by a spin-coating method Kushida K, Kuriyama K
616 - 620	Hydrogen treatment for polycrystalline nitrogen-doped Cu2O thin film Ishizuka S, Kato S, Okamoto Y, Akimoto K
621 - 628	Crystal growth and optical properties of rare earth calcium oxoborates Vivien D, Aka G, Kahn-Harari A, Aron A, Mougel F, Benitez JM, Ferrand B, Klein R, Kugel G, Le Nain N, Jacquet M
629 - 631	Effect of crystal growth atmosphere on the crystal birefringence of GdYCOB for third harmonic generation of Nd : YAG laser Kawamura K, Nakao H, Furuya H, Yasuda S, Yap YK, Yoshimura M, Mori Y, Sasaki T
632 - 636	Crystal growth of GdYCOB for non-critical phase-matched second-harmonic generation at 860 nm Nakao H, Makio S, Furuya H, Kawamura K, Yasuda S, Yap YK, Yoshimura M, Mori Y, Sasaki T
637 - 640	Ce, Er, Yb : YCa4O(BO3)(3) crystals Kuzmicheva GM, Ageev AY, Rybakov VB, Panyutin VL, Yu YM, Chizhikov VI
641 - 644	Influence of Ca4GdO(BO3)(3) doping on its properties Lukasiewicz T, Kityk IV, Makowska-Janusik M, Majchrowski A, Galazka Z, Kaddouri H, Mierczyk Z
645 - 648	Effect of crystallinity on the bulk laser damage and UV absorption of CLBO crystals Ono R, Kamimura T, Fukumoto S, Yap YK, Yoshimura M, Mori Y, Sasaki T, Yoshida K
649 - 653	Growth and optical properties of a new nonlinear optical lanthanum calcium borate crystal Xu XW, Chong TC, Zhang GY, Cheng SD, Li MH, Phua CC
654 - 657	The crystal growth and nonlinear optical properties of K2Al2B2O7 Hu ZG, Ushiyama N, Yap YK, Yoshimura M, Mori Y, Sasaki T
658 - 662	The major problems of seeding and growth of barium borate crystals in terms of new data on phase relations in BaO-B2O3-Na2O system Tsvetkov EG, Tyurikov VI, Khranenko GG
663 - 667	Theoretical studies of nonlinear optical crystals in metal cluster compounds Wu KC, Chen SH, Snijders JG, Sa RJ, Lin CS, Zhuang BT
668 - 671	Morphologic characterization of DyxY1-xAl3(BO3)(4) single crystals grown from the flux and vapour phase Vazquez RM, Caballero MA, Gonzalez-Manas M, Kokanyan EP, Ruiz CM, Dieguez E
672 - 676	Flux growth of large potassium titanyl phosphate crystals and their electro-optical applications Wang XY, Yuan X, Li W, Qi JB, Wang SJ, Shen DZ
677 - 681	Engineering of lithium niobate domain structure through the off-centered Czochralski growth technique Bermudez V, Callejo D, Vilaplana R, Capmany J, Dieguez E
682 - 686	Chemical and thermal conditions for the formation of stoichiometric LiNbO3 Polgar K, Peter A, Poppl L, Ferriol M, Foldvari I
687 - 693	Modeling of defects and surfaces in perovskite ferroelectrics Borstel G, Eglitis RI, Kotomin EA, Heifets E
694 - 699	Growth and characterization of potassium tantalate niobate single crystals by the step-cooling technique Ilangovan R, Ravi G, Subramanian C, Ramasamy P, Sakai S
700 - 702	Growth and ferroelectric properties of Nd-doped strontium-barium niobate crystals Ivleva LI, Volk TR, Isakov DV, Gladkii VV, Polozkov NM, Lykov PA
703 - 706	Crystal growth and physical properties of Cs2Nb4O11 and Rb2Nb4O11 single crystals Kharitonova EP, Voronkova VI, Yanovskii VK, Stefanovich SY
707 - 713	Growth habits of 3 and 4-inch langasite single crystals Uda S, Wang SQ, Konishi N, Inaba H, Harada J
714 - 719	High-quality langasite films grown by liquid phase epitaxy Klemenz C
720 - 724	Growth of epitaxial substrate Gd3Ga5O12 (GGG) single crystal through pure GGG phase polycrystalline material Zhao GJ, Li T, Xu J
725 - 729	MoO3-Li2O flux LPE growth of YIG films and its characterization Takagi T, Fujino M, Fujii T
730 - 734	The growth of TiO2 (rutile) single crystals using the FZ method under high oxygen pressure Park JK, Shim KB, Auh KH, Tanaka I
735 - 739	In situ measurement of Bi4Ge3O12 interface supercooling during melt crystal growth Golyshev VD, Gonik MA, Tsvetovsky VB
740 - 744	Bi4B2O9 - crystal growth and some new attractive properties Muehlberg M, Burianek M, Edongue H, Poetsch C
745 - 748	Optical properties of EFG grown Nd : YVO4 single crystals dependent on Nd concentration Hur MG, Yang WS, Suh SJ, Ivanov MA, Kochurikhin VV, Yoon DH
749 - 752	Growth of large Bi2Sr2CaCu2Oy single crystals by a modified vertical Bridgman method Tanaka H, Kishida S
753 - 755	Growth of La-doped Bi2Sr2CaCu2O, single crystals by a self-flux method Uemoto H, Maki K, Kishida S
756 - 761	On the growth of underdoped Bi2Sr2CaCu2O8+delta single crystals by TSFZ method Liang B, Lin CT
762 - 766	Crystal growth of BiSrCaCuo thin films on submicron-sized step structures Ishibashi T, Yonemitsu K, Inagaki K, Sato K
767 - 771	Construction of (Nd0.33Eu0.33Gd0.33)Ba2CU3Ox phase diagram and its crystallization Hayakawa Y, Murai T, Aswal DK, Kumagawa M
772 - 777	Growth mechanism and additive effect of high-T-c superconducting crystals Chen C, Wondre F, Ryan JF, Narlikar A, Samanta SB
778 - 782	Top-seeded solution growth of Ca-doped YBCO single crystals Lin CT, Liang B, Chen HC
783 - 786	Crystal growth of YCuO2 delafossite containing triangular Cu planes Isawa K, Nagano M, Yamada K
787 - 791	Bulk single-crystal growth of strontium ruthenates by a floating-zone method Ikeda SI, Azuma U, Shirakawa N, Nishihara Y, Maeno Y
792 - 795	Growth of bulk Pr2-xCexCuO4+delta single crystals by B2O3 encapsulated flux technique Jayavel R, Mochiku T, Ooi S, Hirata K
796 - 800	Crystal growth of SrCu2O3 under high pressure Loffert A, Gross C, Assmus W
801 - 805	Crystal growth of Ca12Al14O33 by the floating zone method Watauchi S, Tanaka I, Hayashi K, Hirano M, Hosono H
806 - 809	Growth of large La1-xSrxMnO3 single crystals under argon pressure by the floating-zone technique Prabhakaran D, Coldea AI, Boothroyd AT, Blundell S
810 - 814	Floating zone growth and properties of La(1-x)A(x)MnO(3) (A = Ca,Sr) single crystals Shulyatev D, Karabashev S, Arsenov A, Mukovskii Y, Zverkov S
815 - 819	Growth of large La2-xSrxNiO4+delta single crystals by the floating-zone technique Prabhakaran D, Isla P, Boothroyd AT
820 - 827	Historical review of quartz crystal growth Iwasaki F, Iwasaki H
828 - 832	Kinetics of dissolution and state of silica in hydrothermal solutions of Na2CO3 and NaOH, and accelerated method for the quartz crystal characterization against growth rate Balitsky VS, Kurashige M, Balitskaya L, Iwasaki H
833 - 836	Experimental study of the simultaneous dissolution and growth of quartz and topaz Balitsky VS, Balitskaya L, Lu T, Shigley JE
837 - 842	OH impurities in GaPO4 crystals: correlation between infrared absorption and mass loss during thermal treatment Jacobs K, Hofmann P, Klimm D
843 - 847	Growth striations in GaPO4 single crystals obtained under hydrothermal conditions Barz RU, Grassl M, Gille P
848 - 852	Piezoelectric single crystal Pb[(Zn1/3Nb2/3)(0.93)Ti-0.07]O-3 (PZNT 93/7) for ultrasonic transducers Harada K, Hosono Y, Kobayashi T, Yamashita Y, Wada S, Tsurumi T
853 - 857	Growth of 3-in single crystals of piezoelectric Pb[(Zn1/3Nb2/3)(0.91)Ti-0.09]O-3 by the supported solution Bridgman method Matsushita M, Tachi Y, Echizenya K
858 - 863	Growth of Co-doped (Ba,Sr)TiO3 single crystals and their characterization Madeswaran S, Girldharan NV, Jayavel R, Subramanian C
864 - 868	One possible mechanism of spiral/footing growth of Cz-grown Li6Gd(BO3)(3) Chaminade JP, Viraphong O, Miyazawa S
869 - 873	Growth of luminescent Zn2SiO4 : Mn2+ particles inside oxidized porous silicon: emergence of yellow luminescence Taghavinia N, Lerondel G, Makino H, Yamamoto A, Yao T, Kawazoe Y, Goto T
874 - 878	X-ray diffraction and FTIR spectroscopy of heat treated R2O3 : 3Ga(2)O(3): 4B(2)O(3) systems Beregi E, Watterich A, Madarasz J, Toth M, Polgar K
879 - 883	Growth of high-melting sesquioxides by the heat exchanger method Peters V, Bolz A, Petermann K, Huber G
884 - 889	Growth and crystal structure of the BeAl6O10 single crystals Alimpiev AI, Merkulov AA, Solntsev VP, Tsvetkov EG, Matrosov VN, Pestryakov EV
890 - 893	Growth and characterization of deuterated analog of L-arginine phosphate single crystals Hameed ASH, Ravi G, Ilangovan R, Azariah AN, Ramasamy P
894 - 898	Influence of neutral environment in the growth of Cr-doped LiCAF/LiSAF crystals: X-ray powder diffraction and EPR analysis Vazquez RM, Santos MT, Lopez FJ, Bravo D, Dieguez E
899 - 903	Peculiarities of the growth of disordered Na, R-fluorite (R=Y, Ce-Lu) single crystals Blistanov AA, Chernov SP, Karimov DN, Ouvarova TV
905 - 911	Nitride semiconductors - impact on the future world Akasaki I
912 - 921	Growth and characterization of freestanding GaN substrates Motoki K, Okahisa T, Nakahata S, Matsumoto N, Kimura H, Kasai H, Takemoto K, Uematsu K, Ueno M, Kumagai Y, Koukitu A, Seki H
922 - 925	Bulk GaN growth by direct synthesis method Nishino K, Kikuta D, Sakai S
926 - 930	The effect of metallic catalysts on the synthesis of GaN micro-crystals Roh CH, Park YJ, Kim EK, Shim KB
931 - 935	GaN-MOVPE growth and its microscopic chemistry of gaseous phase by computational thermodynamic analysis Hirako A, Yoshitani M, Nishibayashi M, Nishikawa Y, Ohkawa K
936 - 941	Quantum chemical study of gas-phase reactions of trimethylaluminium and triethylaluminium with ammonia in III-V nitride semiconductor crystal growth Ikenaga M, Nakamura K, Tachibana A, Matsumoto K
942 - 946	Key issues for obtaining high-quality GaN films by two-flow metalorganic vapor phase epitaxy Morimoto K, Inoue N
947 - 950	Relaxation of misfit-induced stress in nitride-based heterostructures Terao S, Iwaya M, Sano T, Nakamura T, Kamiyama S, Amano H, Akasaki I
951 - 955	Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN Iwaya M, Terao S, Sano T, Ukai T, Nakamura R, Kamiyama S, Amano H, Akasaki I
956 - 960	Metalorganic vapor phase epitaxy growth of AlGaN/GaN heterostructures on sapphire substrates Hiroki M, Maeda N, Kobayashi N
961 - 967	MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors Nakada N, Ishikawa H, Egawa T, Jimbo T, Umeno M
968 - 971	MOVPE growth and characterization of Al1-xInxN/GaN multiple layers Kosaki M, Mochizuki S, Nakamura T, Watanabe Y, Yukawa Y, Nitta S, Yamaguchi S, Amano H, Akasaki I
972 - 977	Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H-SiC substrate by LP-MOVPE for deep-UV emission Takano T, Kurimoto M, Yamamoto J, Kawanishi H
978 - 982	Growth of GaN and related materials by gas-source molecular-beam epitaxy using uncracked ammonia gas Yoshida S
983 - 987	Effect of hydrogen on morphological changes in columnar structure of GaN grown by ECR-MBE Araki T, Onogi A, Juni N, Nanishi Y
988 - 992	Overgrowth of GaN layer on GaN nano-columns by RF-molecular beam epitaxy Kusakabe K, Kikuchi A, Kishino K
993 - 997	Effect of sapphire substrate nitridation on determining rotation domain in GaN growth Yamaguchi T, Araki T, Saito Y, Kano K, Kanazawa H, Nanishi Y, Teraguchi N, Suzuki A
998 - 1002	In-situ real-time analysis on strain relaxation process in GaN growth on sapphire by RF-MBE Xu K, Yano N, Jia AW, Yoshikawa A, Takahashi K
xiv - xvii	Proceedings of the thirteenth International Conference on Crystal Growth in conjunction with the Eleventh International Conference on Vapor Growth and Epitaxy Kyoto, Japan, 30 July-4 August 2001 -Chairpersons' preface Nishinaga T, Takahashi K
1003 - 1007	Polarity control of GaN grown on sapphire substrate by RF-MBE Xu K, Yano N, Jia AW, Yoshikawa A, Takahashi K
1008 - 1011	GaN growth by compound source molecular beam epitaxy Honda T, Sato K, Hashimoto T, Shinohara M, Kawanishi H
1012 - 1016	Lattice relaxation process of AlN growth on atomically flat 6H-SiC substrate in molecular beam epitaxy Onojima N, Suda J, Matsunami H
1017 - 1021	Growth of high-quality InN using low-temperature intermediate layers by RF-MBE Saito Y, Yamaguchi T, Kanazawa H, Kano K, Araki T, Nanishi Y, Teraguchi N, Suzuki A
1022 - 1026	Effect of atomic hydrogen irradiation on native oxides of InN surface Ohashi T, Saito Y, Maruyama T, Nanishi Y
1027 - 1031	MBE growth of Eu- or Tb-doped GaN and its optical properties Bang H, Morishima S, Li ZQ, Akimoto K, Nomura M, Yagi E
1032 - 1036	Effect of GaN buffer layer on crystallinity of InN grown on (111)GaAs Guo QX, Okada A, Kidera H, Tanaka T, Nishio M, Ogawa H
1037 - 1041	Crystal growth of nitride-rich GaNP by laser-assisted metalorganic chemical-vapor deposition Yoshida S, Kikawa J, Itoh Y
1042 - 1046	NH3 flow rates dependence of crystallinity in GaN thin films grown by reactive close-spaced method at low temperature Watanabe Y, Sano M
1047 - 1054	Electron microscopy analyses of microstructures in ELO-GaN Kuwano N, Horibuchi K, Kagawa K, Nishimoto S, Sueyoshi M
1055 - 1059	Carrier-gas dependence of ELO GaN grown by hydride VPE Miyake H, Bohyama S, Fukui M, Hiramatsu K, Iyechika Y, Maeda T
1060 - 1064	Reduction of defect density in GaN epilayer having buried Ga metal by MOCVD Sumiya M, Kurumasa Y, Ohtsuka K, Kuwahara K, Takano Y, Fuke S
1065 - 1069	Reduction of threading dislocation density in AlXGa1-XN grown on periodically grooved substrates Mochizuki S, Detchprohm T, Sano S, Nakamura T, Amano H, Akasaki I
1070 - 1074	Microstructures of two-step facet-controlled ELO-GaN grown by MOVPE method - effect of mask geometry Horibuchi K, Kuwano N, Miyake H, Hiramatsu K
1075 - 1078	Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution Yoshimoto M, Saraie J, Nakamura S
1079 - 1083	Heteroepitaxial growth of gallium nitride on (111)GaAs substrates by radio frequency magnetron sputtering Guo QX, Okada A, Kidera H, Tanaka T, Nishio M, Ogawa H
1084 - 1088	Comparison of GaN growth processes on GaAs(111)A and (111)B substrates studied by ab initio calculation Matsuo Y, Kumagai Y, Irisawa T, Koukitu A
1089 - 1093	Growth parameter dependence of HVPE GaN and polarity and crystal quality of the grown layers Namerikawa M, Sato T, Takahashi O, Suemasu T, Hasegawa F
1094 - 1098	Effect of buffer layer on the growth of GaN on Si substrate Lee JW, Jung SH, Shin HY, Lee IH, Yang CW, Lee SH, Yoo JB
1099 - 1103	Fabrication of GaN/AlGaN heterostructures on a (111)Si substrate by selective MOVPE Kato T, Honda Y, Yamaguchi M, Sawaki N
1104 - 1109	Investigation of initial growth layers grown on Si(001) process for GaN heteroepitaxial and Si(111) substrates by ECR-assisted MBE Yodo T, Ando H, Nosei D, Harada Y, Tamura M
1110 - 1113	Growth of wurtzite-GaN on Si(211) by metalorganic vapor phase epitaxy Chen XF, Honda Y, Kato T, Sawaki N
1114 - 1117	Heteroepitaxial growth of group-III nitrides on lattice-matched metal boride ZrB2 (0001) by molecular beam epitaxy Suda J, Matsunami H
1118 - 1123	New oxide crystal (La,Sr)(Al,Ta)O-3 as substrate for GaN epitaxy Lukasiewicz T, Swirkowicz M, Sakowska H, Turos A, Leszczynski M, Ratajczak R
1124 - 1128	Effects of growth temperature in selective-area growth of cubic GaN on GaAs (100) by MOVPE Sanorpim S, Wu J, Onabe K, Shiraki Y
1129 - 1132	Structural analysis of Si-doped AlGaN/GaN multi-quantum wells Nakamura T, Mochizuki S, Terao S, Sano T, Iwaya M, Kamiyama S, Amano H, Akasaki I
1133 - 1138	Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers Tabuchi M, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I
1139 - 1142	Characterization of local structures around In atoms in Ga1-In-x(x) layers by fluorescence EXAFS measurements Tabuchi M, Katou D, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I
1143 - 1147	Influence of lattice polarity on wurzite GaN {0001} decomposition as studied by in situ gravimetric monitoring method Mayumi M, Satoh F, Kumagai Y, Takemoto K, Koukitu A
1148 - 1152	Growth and characterizations of InGaN on N- and Ga-polarity GaN grown by plasma-assisted molecular-beam epitaxy Shen XQ, Ide T, Shimizu M, Okumura H
1153 - 1157	CAICISS characterization of GaN films grown by pulsed laser deposition Ohta J, Fujioka H, Furusawa M, Sasaki A, Yoshimoto M, Koinuma H, Sumiya M, Oshima M
1158 - 1162	G-GIXD characterization of GaN grown by laser MBE Takahashi H, Ohta J, Fujioka H, Oshima M, Kimura M
1163 - 1166	Low-pressure MOCVD growth of GaN/AlGaN multiple quantum wells for intersubband transitions Hoshino K, Someya T, Hirakawa K, Arakawa Y
1167 - 1171	Valence transition of Eu ions in GaN near the surface Maruyama T, Morishima S, Bang H, Akimoto K, Nanishi Y
1172 - 1175	Effects of internal piezoelectric field on electronic states of InGaN quantum dots grown on GaN Saito T, Arakawa Y
1176 - 1179	On the capacitance-voltage characteristics of Al/BaTiO3/GaN MFS structures Kumar MS, Sumathi RR, Giridharan NV, Jayavel R, Kumar J
1180 - 1186	Growth of large high-quality SiC single crystals Ohtani N, Fujimoto T, Katsuno M, Aigo T, Yashiro H
1187 - 1191	Evolution of domain walls in 6H-and 4H-SiC single crystals Siche D, Rost HJ, Doerschel J, Schulz D, Wollweber J
1192 - 1195	Mechanism of nitrogen incorporation in sublimation growth of SiC Naitoh M, Hara K, Hirose F, Onda S
1196 - 1201	Computational study on the SiC sublimation growth Bottcher K, Schulz D
1202 - 1205	Synthesis and growth of 3C-SiC crystals from solution at 950 degrees C Tanaka A, Shiozaki N, Katsuno H
1206 - 1212	Epitaxial growth of thick 4H-SiC layers in a vertical radiant-heating reactor Tsuchida H, Kamata I, Jikimoto T, Izumi K
1213 - 1218	High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition Nakazawa S, Kimoto T, Hashimoto K, Matsunami H
1219 - 1223	SiC hornoepitaxy on Al-ion-implanted layers for fabricating power device structures Imaizumi M, Tanimura J, Tarui Y, Sugimoto H, Ohtsuka K, Takami T, Ozeki T
1224 - 1229	Selective homoepitaxy of 4H-SiC on (0001) and (1 1 (2)over-bar 0) masked substrates Chen Y, Kimoto T, Takeuchi Y, Matsunami H
1230 - 1234	Study of nitrogen, aluminium and boron incorporation in SiC layers grown by sublimation epitaxy Syvajarvi M, Yakimova R, Kakanakova-Georgieva A, Sridhara SG, Linnarsson MK, Janzen E
1235 - 1238	Crystal growth of silicon carbide in hydrogen atmosphere by sublimation close space technique Furusho T, Lilov SK, Ohshima S, Nishino S
1239 - 1243	A proposal for CVD growth of 15R-SiC by observing the etch pits on 15R-SiC (0 0 0 (1)over-bar) C-face Nishiguchi T, Masuda Y, Ohshima S, Nishino S
1244 - 1249	3C-SiC hetero-epitaxial growth on undulant Si(001) substrate Nagasawa H, Yagi K, Kawahara T
1250 - 1253	Lateral over-growth of 3C-SiC on patterned Si(111) substrates Nishino S, Jacob C, Okui Y, Ohshima S, Masuda Y
1254 - 1259	In situ observation of reflection high-energy electron diffraction during the initial growth of SiC on Si using dimethylsilane Yasui K, Narita Y, Inubushi T, Akahane T
1260 - 1263	Growth kinetics in plasma CVD of a-SiC films from monomethylsilane revealed by in situ spectroscopy Kaneko T, Miyakawa N, Yamazaki H, Iikawa Y
1264 - 1268	Orientation dependence of solid phase growth of implantation-induced amorphous layer in 6H-SiC Nakamura T, Matsumoto S, Satoh M
1269 - 1276	Device-grade homoepitaxial diamond film growth Okushi H, Watanabe H, Ri S, Yamanaka S, Takeuchi D
1277 - 1280	Heteroepitaxial diamond thin film growth on Ir(001)/MgO(001) substrate by antenna-edge plasma assisted chemical vapor deposition Tachiki M, Fujisaki T, Taniyama N, Kudo M, Kawarada H
1281 - 1285	Growth rate of high-quality large diamond crystals Sumiya H, Toda N, Satoh S
1286 - 1290	Growth morphology and change in growth conditions of a spinel-twinned natural diamond Abduriyim A, Kitamura M
1291 - 1295	Molecular-beam epitaxy of InAs on GaAs substrates with hole arrays patterned by focused ion beam Morishita Y, Ishiguro M, Miura S, Enmei Y
1296 - 1300	Luminescence in excess of 1.5 mu m at room-temperature of InAs quantum dots capped by a thin InGaAs strain-reducing layer Tatebayashi J, Nishioka M, Arakawa Y
1301 - 1306	Uniform formation process of self-organized InAs quantum dots Yamaguchi K, Kaizu T, Yujobo K, Saito Y
1307 - 1311	Effect of buffer composition on lateral alignment of self-assembled In0.4Ga0.6As island arrays grown on GaAs (311)B substrates Xu HZ, Akahane K, Song HZ, Okada Y, Kawabe M
1312 - 1315	Fabrication of GaN quantum dots by metalorganic chemical vapor selective deposition Tachibana K, Someya T, Ishida S, Arakawa Y
1316 - 1319	Stranski-Krastanow growth of GaN quantum dots by metalorganic chemical vapor deposition Miyamura M, Tachibana K, Someya T, Arakawa Y
1320 - 1325	Alloying of CdSe/ZnSe quantum dot grown by an alternate molecular beam supply Ohishi M, Tanaka K, Fujimoto T, Yoneta M, Saito H
1326 - 1330	Preparation of ferromagnetic (In,Mn)As with relatively low hole concentration and Curie temperature 50 K Slupinski T, Oiwa A, Yanagi S, Munekata H
1331 - 1333	Preparation of ferromagnetic quaternary (In,Ga,Mn)As Slupinski T, Munekata H, Oiwa A
1334 - 1338	Effect of low-temperature annealing on the crystallinity of III-V-based diluted magnetic semiconductors Hashimoto Y, Hayashi T, Katsumoto S, Iye Y
1339 - 1343	Growth and properties of new III-V diluted magnetic semiconductor Ga1-xCrxAs Zaets W, Saito H, Ando K
1344 - 1348	Preparation of quaternary magnetic alloy semiconductor epilayers (Ga, Mn, Fe)As Moriya R, Munekata H, Kondo T, Oiwa A
1349 - 1352	Growth and properties of (Ga,Mn)As on Si (100) substrate Zhao JH, Matsukura F, Abe E, Chiba D, Ohno Y, Takamura K, Ohno H
1353 - 1357	Molecular beam epitaxy of (Ga,Mn)N Kondo T, Kuwabara S, Owa H, Munekata H
1358 - 1362	Molecular beam epitaxy of wurtzite (Ga,Mn)N films on sapphire(0001) showing the ferromagnetic behaviour at room temperature Sonoda S, Shimizu S, Sasaki T, Yamamoto Y, Hori H
1363 - 1369	Room temperature ferromagnetism in novel magnetic semiconductors based on II-IV-V-2 chalcopyrite compounds Sato K, Medvedkin GA, Ishibashi T
1370 - 1373	Growth of (Cd, Mn)GeP2 ferromagnetic semiconductor Hirose K, Medvedkin GA, Ishibashi T, Nishi T, Sato K
1374 - 1377	MBE growth of MnTe/ZnTe superlattices on GaAs (100) vicinal substrates Suzuki T, Ishibe I, Nabetani Y, Kato T, Matsumoto T
1378 - 1382	Growth of Fe(100) on GaAs(100) for tunnel magneto-resistance junctions Manago T, Mizuguchi M, Akinaga F
1383 - 1387	MBE growth of ultrathin Co films on a Si(111) surface with ultrathin buffer layers Hyomi K, Murayama A, Oka Y, Kondoh S, Falco CM
1388 - 1393	Surface and bulk characterization of thermally induced defects during silicon single wafer epitaxy Feichtinger P, Goorsky MS, Muemmler F, Rickborn S, Tran Q, Oster D, Moreland J
1394 - 1398	Effects of ions and electrons in electron-beam-excited plasma assisted CVD on nanocrystalline silicon film properties Ohshita Y, Yamaguchi K, Motegi H, Yamaguchi M
1399 - 1403	Effect of UV-O-2, NF3/H-2 surface preparation on the crystalline defects in silicon homoepitaxy (Part I. A study on photochemical surface preparation in series) Sun MC, Kim DH, Kwon SK
1404 - 1409	New Si atomic-layer-controlled growth technique with thermally cracked hydride molecule Suda Y, Hosoya N, Shiratori D
1410 - 1417	Microchannel epitaxy: an overview Nishinaga T
1418 - 1422	Crystallographic orientation dependence of impurity incorporation during epitaxial lateral overgrowth of InP Sun YT, Anand S, Lourdudoss S
1423 - 1427	Erbium-doped GaP grown by MOMBE and their optical properties Suemune I, Uesugi K, Shimozawa T, Kumano H, Machida H, Shimoyama N
1428 - 1433	Growth kinetics of GaP in LPE Inatomi Y, Horiuchi K, Kato A, Kuribayashi K
1434 - 1439	Silicon doping into MBE-grown GaAs at high arsenic vapor pressures Miyagawa A, Yamamoto T, Ohnishi Y, Nelson JT, Ohachi T
1440 - 1444	Growth and characterization of carbon-doped low-temperature GaAs Herfort J, Ulrici W, Moreno M, Ploog KH
1445 - 1449	X-ray diffraction analysis of LT-GaAs multilayer structures Fukushima S, Mukai K, Otsuka N
1450 - 1454	Growth of GaAs epitaxial layers on Si substrate with porous Si intermediate layer by chemical beam epitaxy Saravanan S, Hayashi Y, Soga T, Jimbo T, Umeno M, Sato N, Yonehara T
1455 - 1459	Maskless selective direct growth and doping of GaAs using a Ga-Sn low energy focused ion beam for in-situ micro-device structures fabrication Cho DH, Suzuki Y, Tanaka M, Hachiro M, Pak K
1460 - 1465	A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy: vertical microchannel epitaxy Matsunaga Y, Naritsuka S, Nishinaga T
1466 - 1470	Characterization of GaAs on MnZn ferrite with a MnAs buffer layer Ito S, Fujioka H, Kiwata H, Ikeda T, Oshima M
1471 - 1475	Quantitative imaging of InGaAs/GaAs layers using transmission electron microscopy methods: characterization of stresses and chemical composition Leifer K, Buffat PA, Cagnon J, Kapon E, Rudra A, Stadelmann PA
1476 - 1480	Dependence on In content of InxGa1-xAs quantum dots grown along GaAs multiatomic steps by MOVPE Ishihara T, Lee S, Akabori M, Motohisa J, Fukui T
1481 - 1485	Metalorganic vapor phase epitaxial growth of metastable GaAs1-xBix alloy Oe K
1486 - 1490	High-density V-groove InGaAs/AlGaAs quantum wires on submicron gratings by constant growth technique Tsurumachi N, Son CS, Kim TG, Ogura M
1491 - 1494	First successful growth of TlInGaAs layers on GaAs substrates by gas source MBE Lee HJ, Mizobata A, Konishi K, Maeda O, Asami K, Asahi H
1495 - 1498	Growth of TlGaAs by low-temperature molecular-beam epitaxy Kajikawa Y, Kubota H, Asahina S, Kanayama N
1499 - 1503	In0.53Ga0.47As/GaAs0.5Sb0.5/In(0.52)Al(0.4)sAs asymmetric type II quantum well structures lattice-matched to InP grown by molecular beam epitaxy Kawamura Y, Kondo A, Fujimoto M, Higashino T, Takasaki H, Naito H, Inoue N
1504 - 1509	Uniform growth of high-quality 2-in diameter In0.53Ga0.47As/In0.52Al0.48As/InP and In0.2Ga0.8As/GaAs/AlGaAs multi-quantum well wafers by MBE with GaP and GaAs decomposition sources Song JD, Kim JM, Lee YT
1510 - 1514	Growth, characterization and avalanche photodiode application of strain compensated InGaAsP/InAlAs superlattice Suzuki A, Yokotsuka T, Tanaka H, Yamada A, Ohki Y
1515 - 1518	Control of dark currents in multi-quantum well solar cells fabricated by atomic H-assisted molecular beam epitaxy Okada Y, Seki S, Takeda T, Kawabe M
1519 - 1524	Sb surface segregation effect on the phase separation of MBE grown InAsSb Miyoshi H, Suzuki R, Amano H, Horikoshi Y
1525 - 1530	A novel method to grow high quality In1-xGaxAs ELO and bridge layers with high indium compositions Balakrishnan K, Iida S, Kumagawa M, Hayakawa Y
1531 - 1535	The preparation of B-Sb thin films by molecular flow region PVD process Kumashiro Y, Nakamura K, Doi Y, Hirata K, Yokoyama T, Sato K
1536 - 1540	Fabrication of wurtzite quantum-well structures of CdSe/ZnCdSe by molecular beam epitaxy Matsumura N, Yasui K, Saraie J
1541 - 1544	HRTEM observation of CdSe/ZnSe SQWs grown on vicinal GaAs substrate Nabetani Y, Kobayashi Y, Ito Y, Kato T, Matsumoto T
1545 - 1549	Epitaxial growth and characterization of Cl-doped ZnSe layer by MBE Yoneta M, Nanami K, Uechi H, Ohishi M, Saito H, Yoshino K
1550 - 1553	Composition control of CdSeTe layers grown by molecular beam epitaxy Matsumura N, Sakamoto T, Saraie J
1554 - 1558	Amorphous Zn predeposition for growth of low-defect-density CdTe films and low-optical-loss Cd1-xMnxTe magneto-optic waveguide on GaAs substrate Zaets W, Ando K
1559 - 1565	The effect of the electron irradiation on the electrical properties of thin polycrystalline CdSe and CdS layers Antohe S, Ruxandra V, Alexandru H
1566 - 1569	Defects-induced volume deviations in ZnSe Ebe H, Sakurai F, Chen ZQ, Uedono A, Zhang BP, Segawa Y, Suto K, Nishizawa J
1570 - 1574	Luminescence properties of lithium-doped ZnS epitaxial layers grown by MOCVD Nakamura S, Yamaguchi J, Takagimoto S, Yamada Y, Taguchi T
1575 - 1579	Preparation and Raman spectra of ZnSe/GaAs heteroepitaxial layers Mitsumoto T, Kao N, Kitagawa H, Kitahara K, Mizuno K, Noda Y
1580 - 1584	Photo luminescence spectra of arsenic-doped ZnTe films grown by metalorganic vapor phase epitaxy (MOVPE) using triethylarsine Hayashida K, Tanaka T, Nishio M, Chang Y, Wang J, Wang SL, Guo QX, Ogawa H
1585 - 1588	Crystalline structure of CdTe directly grown on hydrogen-terminated Si(111) without pre-heat treatment Seto S, Yamada S, Miyakawa T, Suzuki K
1589 - 1593	Structural and optical properties of Zn1-xMnxTe epilayers as diluted magnetic II-VI semiconductors Yu YM, Park JG, Hyun MH, Nam S, Byungsung O, Lee KS, An KS, Choi YD, Yoon MY, Yu PY
1594 - 1598	Comparison of hexagonal ZnS film properties on c- and a-sapphires Yoo YZ, Chikyow T, Ahmet P, Jin ZW, Kawasaki M, Koinuma H
1599 - 1602	Energetics in the growth mechanism of semiconductor heteroepitaxy Miyagishima N, Okajima K, Oyama N, Shiraishi K, Takeda K, Ohno T, Ito T
1603 - 1609	A quadratic convergence method for MOVPE thermodynamic analysis Hasegawa T, Koukitu A, Kumagai Y
1610 - 1614	Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrate Ueno K, Tokuchi S, Saiki K, Koma A
1615 - 1619	Growth of CuCl nanostructures on CaF2(111) substrates by MBE - their morphology and optical spectra Kawamori A, Edamatsu K, Itoh T
1621 - 1627	Charged native point defects in GaAs and other III-V compounds Hurle DTJ
1628 - 1637	Experimental analysis and modeling of melt growth processes Muller G
1638 - 1645	Crystal growth under microgravity: present results and future prospects towards the International Space Station Benz KW, Dold P
1646 - 1650	Protein crystal growth in space, past and future DeLucas LJ, Moore KM, Long MM, Rouleau R, Bray T, Crysel W, Weise L
1651 - 1656	Effect of the axial temperature gradient on the formation of grown-in defect regions in Czochralski silicon crystals; reversion of the defect regions between the inside and outside of the Ring-OSF Okui M, Nishimoto M
1657 - 1662	Controlling oxygen concentration and distribution in 200 mm diameter Si crystals using the electromagnetic Czochralski (EMCZ) method Watanabe M, Eguchi M, Wang W, Hibiya T, Kuragaki S
1663 - 1666	The effects of boron impurity on the extended defects in CZ silicon crystals grown under interstitial rich conditions Terashima K, Noguchi H
1667 - 1670	Variation of silicon melt viscosity with boron addition Nishimura S, Matsumoto S, Terashima K
1671 - 1677	Measurement of microscopic growth rates in float zone silicon crystals Dold P, Schweizer M, Croll A, Benz KW
1678 - 1684	Grown-in defects in silicon crystals Nakamura K, Saishoji T, Tomioka J
1685 - 1691	Silicon defect and impurity studies using float-zone crystal growth as a tool Ciszek TF, Wang TH
1692 - 1696	Numerical simulation of effect of ampoule rotation for the growth of InGaSb by rotational Bridgman method Ozawa T, Hayakawa Y, Balakrishnan K, Kumagawa M
1697 - 1700	InP melts: investigation of wetting between boat materials in Bridgman growth Shimizu A, Nishizawa J, Oyama Y, Suto K
1701 - 1706	Influence of temperature oscillations on the interface velocity during Bridgman crystal growth Stelian C, Duffar T, Santailler JL, Nicoara I
1707 - 1710	CVD growth of bulk polycrystalline ZnS and its optical properties Fang ZY, Chai YC, Hao YL, Yang YY, Dong YP, Yan ZW, Tian HC, Xiao HT, Wang HM
1711 - 1715	The growth of CdTe bulk crystals using the multi-tube physical vapour transport system Sanghera HK, Cantwell B, Aitken NM, Brinkman AW
1716 - 1719	Experimental and numerical study of the VGF growth of CdTe crystal Okano Y, Kondo H, Kishimoto W, Li L, Dost S
1720 - 1725	Heat treatment in semi-closed ampoule for obtaining stoichiometrically controlled cadmium telluride Zha M, Bissoli F, Zappettini A, Zuccalli G, Zanotti L, Paorici C
1726 - 1730	Photoluminescence study on compensating defects in CdTe : Al Song SH, Wang J, Ishikawa Y, Seto S, Isshiki M
1731 - 1735	Growth and characterization of SPR-ZnS bulk crystal Yoneta M, Ichino K, Yoshino K, Saito H, Ohishi M, Kobayashi H
1736 - 1740	Numerical methods for industrial vertical Bridgman growth of (Cd,Zn)Te Lin K, Boschert S, Dold P, Benz KW, Kriessl O, Schmidt A, Siebert KG, Dziuk G
1741 - 1744	Modelling of the growth of ternary compound cadmium zinc telluride (in a semi-open Markov-like system) from the binary sources CdTe and ZnTe Sanghera HK, Cantwell BJ, Brinkman AW
1745 - 1751	Optimization of VGF-growth of GaAs crystals by the aid of numerical modelling Muller G, Birkmann B
1752 - 1756	The axial and radial segregation due to the thermo-convection, the decrease of the melt in the ampoule and the effect of the precrystallization-zone in the semiconductor crystals grown in a Bridgman-Stockbarger system in a low gravity environment Mihailovici MM, Balint AM, Balint S
1757 - 1761	Numerical study of 3D unsteady melt convection during indu strial-scale CZ Si-crystal growth Evstratov IY, Kalaev VV, Zhmakin AI, Makarov YN, Abramov AG, Ivanov NG, Korsakov AB, Smirnov EM, Dornberger E, Virbulis J, Tomzig E, von Ammon W
1762 - 1768	Factors affecting the isotherm shape of semi-transparent BaF2 crystals grown by Bridgman method Barvinschi F, Bunoiu O, Nicoara I, Nicoara D, Santailler JL, Duffar T
1769 - 1772	Numerical study of interface shape control in the VGF growth of compound semiconductor crystal Okano Y, Kondo H, Dost S
1773 - 1778	Octahedral void defects in Czochralski silicon Itsumi M
1779 - 1784	Numerical study of transport phenomena in the THM growth of compound semiconductor crystal Okano Y, Nishino S, Ohkubo S, Dost S
1785 - 1790	Effects of rotating magnetic fields on temperature and oxygen distributions in silicon melt Kakimoto K
1791 - 1796	Electrical measurements on molten TiO2 using a floating zone furnace Katsumata T, Shiina T, Shibasaki M, Matsuo T
1797 - 1801	Density of molten calcium fluoride Jingu S, Chen XM, Nishimura S, Oyama Y, Terashima K
1802 - 1805	Magnetic field-induced alignment of steel microstructures Maruta K, Shimotomai M
1806 - 1812	Effect of foreign particles: a comprehensive understanding of 3D heterogeneous nucleation Liu XY
1813 - 1817	Crystal nucleation and growth in binary phase-field theory Granasy L, Borzsonyi T, Pusztai T
1818 - 1824	Characteristic lengthscales of step bunching in KDP crystal growth: in situ differential phase-shifting interferometry study Booth NA, Chernov AA, Vekilov PG
1825 - 1830	Particle ordering at the initial stage of colloidal crystallization: implication for non-classical dynamic behavior Ishikawa M, Morimoto H, Maekawa T
1831 - 1834	Drop experiments on crystallization of InGaSb semiconductor Hayakawa Y, Balakrishnan K, Komatsu H, Murakami N, Nakamura T, Koyama T, Ozawa T, Okano Y, Miyazawa M, Dost S, Dao LH, Kumagawa M
1835 - 1839	Crystallization from a molten zone and pendant drop under supercooling conditions Kimura H, Miyazaki A
1840 - 1843	Containerless crystallization of silicon Kuribayashi K, Aoyama T
1844 - 1848	Bridgman growth of detached GeSi crystals Volz MP, Schweizer M, Kaiser N, Cobb SD, Vujisic L, Motakef S, Szofran FR
1849 - 1853	Buoyant-thermocapillary and pure thermocapillary convective instabilities in Czochralski systems Schwabe D
1854 - 1858	Non-invasive techniques for observing the surface behavior of molten silicon Hibiya T, Nakamura S, Sumiji M, Azami T
1859 - 1863	Growth of homogeneous mixed crystals of In0.3Ga0.7As by the traveling liquidus-zone method Kinoshita K, Hanaue Y, Nakamura H, Yoda S, Iwai M, Tsuru T, Muramatsu Y
1864 - 1869	Coarsening dynamics in off-critically quenched binary systems under microgravity conditions Enomoto Y
1870 - 1875	Three-dimensional GSMAC-FEM simulations of the deformation process and the flow structure in the floating zone method Kohno H, Tanahashi T
1876 - 1880	Mathematical simulation of the traveling heater method growth of ternary semiconductor materials under suppressed gravity conditions Lent B, Dost S, Redden RF, Liu Y
1881 - 1885	Three-dimensional analysis of flow and segregation control by slow rotation for Bridgman crystal growth in microgravity Lan CW, Tu CY
1886 - 1891	Features of mass transfer for the laminar melt flow along the interface Bykova SV, Golyshev VD, Gonik MA, Tsvetovsky VB, Frjazinov IV, Marchenko MP
1892 - 1897	Self-assembled Ge quantum dots on Si and their applications Wang KL, Liu JL, Jin G
1898 - 1903	Ordering and self-organized growth of Si in the Si/SiO2 superlattice system Lockwood DJ, Grom GF, Fauchet PM, Tsybeskov L
1904 - 1908	Proof of kinetic influence in Ge nanowire formation on Si(113) Sumitomo K, Zhang Z, Omi H, Bottomley DJ, Ogino T
1909 - 1914	Crystallization of fine silicon particles from silicon monoxide Mamiya M, Kikuchi M, Takei H
1915 - 1919	Development of ballistic electron cold cathode by a low-temperature processing of polycrystalline silicon films Ichihara T, Honda Y, Aizawa K, Komoda T, Koshida N
1920 - 1925	Unexpected room temperature growth of silicon dioxide crystallites on passivated porous silicon Stolyarova S, El-Bahar A, Nemirovsky Y
1926 - 1930	Mass production of multiwalled carbon nanotubes by hydrogen arc discharge Ando Y, Zhao XL, Inoue S, Iijima S
1931 - 1936	Vapor phase preparation of super-elastic carbon micro-coils Chen X, Motojima S, Iwanga H
1937 - 1941	Magnetoresistance in carbon micro-coils annealed at various temperatures Fujii M, Matsui M, Motojima S, Hishikawa Y
1942 - 1945	Formation of ultrafine platinum particles in an aqueous solution with a surfactant Hahakura S, Isoda S, Ogawa T, Moriguchi S, Kobayashi T
1946 - 1950	Fabrication and structural control of nano-structured thin films by solid-state reaction of compositionally modulated multilayers Matsui T, Tsuda H, Mabuchi H, Morii K
1951 - 1955	Composition dependence of constituent phase of Fe-Si thin film prepared by MOCVD Akiyama K, Ohya S, Konuma S, Numata K, Funakubo H
1956 - 1960	Structural observation of Mn silicide islands on Si(111) 7 x 7 surface with UHV-TEM Zhang Q, Takeguchi M, Tanaka M, Furuya K
1961 - 1965	Formation of beta-FeSi2 thin films using laser ablation Komuro S, Katsumata T, Morikawa T, Kokai H, Zhao X, Aoyagi Y
1966 - 1970	Growth evolution of beta-FeSi2 layers grown by Sb mediated reactive deposition epitaxy Makiuchi S, Koga T, Arakawa T, Tomoda W, Maeda Y, Saito K, Tatsuoka H, Kuwabara H
1971 - 1975	Crystal growth of beta-FeSi2 by temperature gradient solution growth method using Zn solvent Udono H, Takaku S, Kikuma I
1976 - 1980	Single-crystal growth of binary and ternary rare earth silicides Behr G, Loser W, Bitterlich H, Graw G, Souptel D, Sampathkumaran EV
1981 - 1985	Liquid phase growth of bulk beta-FeSi2 single crystals using Sb solvent Kuramoto M, Nose Y, Momose Y, Saito K, Tatsuoka H, Kuwabara H
1986 - 1992	Cu-based multinary compounds and their crystal growth: synthesis processes, phase diagrams and control of vapor pressures Matsushita H, Katsui A, Takizawa T
1993 - 1999	Molecular beam epitaxial growth and characterization of CuInSe2 and CuGaSe2 for device applications Niki S, Yamada A, Hunger R, Fons PJ, Iwata K, Matsubara K, Nishio A, Nakanishi H
2000 - 2004	ZnGeP2 growth: melt non-stoichiometry and defect substructure Verozubova GA, Gribenyukov AI, Korotkova VV, Vere AW, Flynn CJ
2005 - 2008	Structural properties of Cu(Ga1-xInx)(y)S-z bulk alloys Kato T, Hayashi S, Kiuchi T, Ishihara Y, Nabetani Y, Matsumoto T
2009 - 2013	Single-crystal growth and optical properties of undoped and Ce3+ doped CaGa2S4 Hidaka C, Takizawa T
2014 - 2018	Lattice dynamics of the chalcopyrite and defect stannite phases in the Cu-(In, Ga)-Se system Nomura S, Endo S
2019 - 2022	Growth and band gap of the filled tetrahedral semiconductor LiMgN Kuriyama K, Nagasawa K, Kushida K
2023 - 2027	Visualization of light dispersion and structural phase transitions with light figures Yamamoto N, Mamedov N, Shinohara T, Kunie A
2028 - 2034	Heteroepitaxy - new challenges and opportunities for materials engineering through molecular beam epitaxy Ploog KH
2035 - 2040	Self-organized growth of nanosized flat dots and vertical magnetic Co pillars on Au(111) Fruchart O, Renaud G, Deville JP, Barbier A, Scheurer F, Klaua M, Barthel J, Noblet M, Ulrich O, Mane-Mane J, Kirschner J
2041 - 2045	Collision processes between sputtered particles on high speed rotating substrate and atomic mass dependence of sticking coefficient Obara K, Fu ZX, Arima M, Yamada T, Fujikawa T, Imamura N, Terada N
2046 - 2049	Thin-film epitaxial growth of the Heusler alloy Cu2AlMn Bach H, Westerholt K, Geiersbach U
2050 - 2054	Preparation of superconducting epitaxial thin films of transition metal nitrides on silicon wafers by molecular beam epitaxy Inumaru K, Okamoto H, Yamanaka S
2055 - 2060	Epitaxial growth of Se100-xTex alloy films deposited on (100) surfaces of KI and KBr Nagashima S
2061 - 2064	Growth characteristics of CaxCd1-xF2 films on Si substrates using CaF2 buffer layer Kambayashi H, Gotoh T, Maeda H, Tsutsui K
2065 - 2070	Crystal growth and evaporation of a triphenylboroxine thin film Irie S, Sakamoto A, Ukeda S, Tokunaga Y, Isa K, Sasaki T, Sakurai K
2071 - 2075	Monolayer and bilayer formation of 17,19-dotetracontadiyne at a liquid/solid interface Takajo D, Fujiwara E, Irie S, Nemoto T, Isoda S, Ozaki H, Toda N, Tomii S, Magara T, Mazaki Y, Yamamoto G
2076 - 2081	Structural relationship between epitaxially grown para-sexiphenyl and mica (001) substrates Plank H, Resel R, Andreev A, Sariciftci NS, Sitter H
2082 - 2090	Study of impurity segregation, crystallinity, and detector performance of melt-grown cadmium zinc telluride crystals Schieber M, Schlesinger TE, James RB, Hermon H, Yoon H, Goorsky M
2091 - 2097	Growth of highly oriented LiNbO3 thin films through structure controlled metal alkoxide precursor solution Hirano S, Takeichi Y, Sakamoto W, Yogo T
2098 - 2103	Facet formation during fiber pulling from the melt Epelbaum BM, Hofmann D
2104 - 2106	High-quality crystal growth of organic nonlinear optical crystal DAST Tsunesada F, Iwai T, Watanabe T, Adachi H, Yoshimura M, Mori Y, Sasaki T
2107 - 2111	Stability of detached-grown germanium single crystals Schweizer M, Volz MP, Cobb SD, Vujisic L, Motakef S, Szoke J, Szofran FR
2112 - 2115	Influence of pressure control on the growth of bulk GaN single crystal using a Na flux Onda M, Iwahashi T, Okamoto M, Yap YK, Yoshimura M, Mori Y, Sasaki T
2116 - 2120	Plasma characteristics of a multi-cusp plasma-sputter-type ion source for thin film formation of gallium nitride Flauta R, Kasuya T, Ohachi T, Wada M
2121 - 2124	Growth of Ca2Si layers on Mg2Si/Si(111) substrates Matsui H, Kuramoto M, Ono T, Nose Y, Tatsuoka H, Kuwabara H
2125 - 2129	Preparation of (Bi, Sb)(2)S-3 semiconductor films by photochemical deposition method Sasaki H, Shibayama K, Ichimura M, Masui K
2130 - 2135	Some aspects of the importance of metastable zone width and nucleation in industrial crystallizers Ulrich J, Strege C
2136 - 2141	Growth behaviour of crystals formed by primary nucleation on different crystalliser scales Westhoff GM, Butler BK, Kramer HJM, Jansens PJ
2142 - 2147	Effects of operating variables on the induction period of CaCl2-Na2CO3 system Tai CY, Chien WC
2148 - 2152	Analysis of nucleation of zeolite A from clear solutions Marui Y, Irie R, Takiyama H, Uchida H, Matsuoka M
2153 - 2159	The effect of additives on the co-crystallisation of calcium with barium sulphate Hennessy AJB, Graham GM
2160 - 2165	An assessment of the formation of electrodeposited scales using scanning electron and atomic force microscopy Morizot AP, Neville A, Taylor JD
2166 - 2171	Removal of carbon dioxide by reactive crystallization in a scrubber-kinetics of barium carbonate crystals Chen PC, Kou KL, Tai HK, Jin SL, Lye CL, Lin CY
2172 - 2177	Scale formation of ice from electrolyte solutions on a scraped surface heat exchanger plate Vaessen RJC, Himawan C, Witkamp GJ
2178 - 2182	The effect of isotopic substitution of deuterium for hydrogen on the morphology of products precipitated from synthetic Bayer solutions Loh JSC, Watling HR, Parkinson GM
2183 - 2187	Crystallization phenomena of magnesium ammonium phosphate (MAP) in a fluidized-bed-type crystallizer Hirasawa I, Kaneko S, Kanai Y, Hosoya S, Okuyama K, Kamahara T
2188 - 2193	Secondary nucleation due to crystal-impeller and crystal-vessel collisions by population balances in CFD-modelling Liiri M, Koiranen T, Aittamaa J
2194 - 2198	Relationship between growth rate and supercooling in the formation of ice lenses in a glass powder Watanabe K
2199 - 2204	Wet calcining of trona (sodium sesquicarbonate) and bicarbonate in a mixed solvent Gartner RS, Witkamp GJ
2205 - 2214	Controlling factor of polymorphism in crystallization process Kitamura M
2215 - 2220	Molecular modelling of the crystallization of polymorphs. Part I: The morphology of HMX polymorphs ter Horst JH, Kramer HJM, van Rosmalen GM, Jansens PJ
2221 - 2226	Polymorphic transformation of DL-methionine crystals in aqueous solutions Yamanobe M, Takiyama H, Matsuoka M
2227 - 2232	X-ray and vibrational spectroscopic study on polymorphism of trielaidin Dohi K, Kaneko F, Kawaguchi T
2233 - 2239	Dissolution and phase transition of pharmaceutical compounds Garcia E, Hoff C, Veesler S
2240 - 2245	Crystal growth of drug materials by spherical crystallization Szabo-Revesz P, Hasznos-Nezdei M, Farkas B, Goczo H, Pintye-Hodi K, Eros I
2246 - 2250	Axial dispersion in a Kureha Crystal Purifier (KCP) Otawara K, Matsuoka T
2251 - 2256	Influences of reflux ratio on separation and purification of acrylic acid by inclined column crystallizer Funakoshi K, Uchida H, Takiyama H, Matsuoka M
2257 - 2263	Dynamic modeling and simulation of eutectic freeze crystallization Himawan C, Vaessen RJC, Kramer HJM, Seckler MM, Witkamp GJ
xviii - xix	Proceedings of the thirteenth International Conference on Crystal Growth in conjunction with the Eleventh International Conference on Vapor Growth and Epitaxy Kyoto, Japan, 30 July-4 August 2001 - Editors' preface Hibiya T, Mullin JB, Uwaha M