1 - 10 |
A study on composition, structure and optical properties of copper-poor CIGS thin film deposited by sequential sputtering of CuGa/In and In/(CuGa plus In) precursors Park SU, Sharma R, Ashok K, Kang S, Sim JK, Lee CR |
11 - 14 |
Study on annealing of infrared nonlinear optical crystal ZnGeP2 Wang ZY, Mao MS, Wu HX, Ni YB, Huang CB, Cheng XD |
15 - 19 |
Nucleation effect and growth mechanism of ZnO nanostructures by electrodeposition from aqueous zinc nitrate baths Sun SJ, Jiao SJ, Zhang KJ, Wang DB, Gao SY, Li HT, Wang JZ, Yu QJ, Guo FY, Zhao LC |
20 - 24 |
Float zone growth and anisotropic spectral properties of Nd:LaVO4 single crystals Yomogida S, Higuchi M, Ogawa T, Wada S, Takahashi J |
25 - 29 |
Characterization of nanostructured spinel zinc aluminate crystals on wurtzite zinc oxide template Liang YC, Hu CY, Deng XS, Zhong H, Wu YJ |
30 - 34 |
Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer layers Guo JW, Huang H, Ding YZ, Ji ZY, Liu M, Ren XM, Zhang X, Huang YQ |
35 - 42 |
Dislocation bending and tensile stress generation in GaN and AlGaN films Raghavan S, Manning IC, Weng XJ, Redwing JM |
43 - 48 |
Growth of CdS nanosheets and nanowires through the solvothermal method Mandi MA, Hassan JJ, Ng SS, Hassan Z |
49 - 54 |
The characteristics of diamond crystallized from carbonyl nickel powders at high pressure and high temperature conditions Li Y, Jia XP, Yan BM, Zhou ZX, Fang C, Zhang ZF, Sun SS, Ma HA |
55 - 59 |
Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition Li LG, Liu SM, Luo S, Yang T, Wang LJ, Liu JQ, Liu FQ, Ye XL, Xu B, Wang ZG |
60 - 63 |
Epitaxial growth of gamma-Ga2O3 films by mist chemical vapor deposition Oshima T, Nakazono T, Mukai A, Ohtomo A |
64 - 68 |
Oriented single crystals of Ni-Mn-Ga with very low switching field Kellis D, Smith A, Ullakko K, Mullner P |
69 - 71 |
Dislocation-induced variation of generation kinetics of boron-oxygen complexes in silicon Cu X, Yuan S, Yu XG, Guo KX, Yang DR |
72 - 76 |
Synthesis of bullet-like wurtzite CuInS2 nanocrystals under atmospheric conditions Guo J, Zhou WH, Li M, Hou ZL, Jiao J, Zhou ZJ, Wu SX |
77 - 82 |
The effect of the growth rate on the microstructure of multi-crystalline silicon Schmid E, Wurzner S, Funke C, Galindo V, Patzold O, Stelter M |
83 - 91 |
Abnormal grain growth of rutile TiO2 induced by ZrSiO4 Hanaor DAH, Xu WQ, Ferry M, Sorrell CC |
92 - 98 |
New method of fabricating silicon wafer for the photovoltaic application based on sintering and recrystallization steps Bellanger P, Sow A, Grau M, Augusto A, Serra JM, Kaminski A, Dubois S, Straboni A |
99 - 106 |
Parametric sensitivity and temporal dynamics of sapphire crystal growth via the micro-pulling-down method Samanta G, Yeckel A, Bourret-Courchesne ED, Derby JJ |
107 - 121 |
A phase-field study of large-scale dendrite fragmentation in Al-Cu Wesner E, Choudhury A, August A, Berghoff M, Nestler B |
122 - 128 |
Morphology transitions in ZnO nanorods grown by MOCVD Montenegro DN, Souissi A, Martinez-Tomas C, Munoz-Sanjose V, Sallet V |
129 - 131 |
On the existence of "bis-glycine maleate" Petrosyan AM, Ghazaryan VV, Fleck M |