1 - 6 |
Single crystal growth of antiferromagnetic Mn3Si by a two-phase RF floating-zone method Hermann R, Wendrock H, Rodan S, Rossler UK, Blum CGF, Wurmehl S, Buchner B |
7 - 21 |
Substrate effect on surface adhesion/crystallisation of calcium carbonate Cheong WC, Gaskell PH, Neville A |
22 - 24 |
Effect of metal mode and oxide mode on unusual c-axis parallel oriented ZnO film growth on Al/glass substrate in a reactive magnetron sputtering of Zn target Takayanagi S, Yanagitani T, Matsukawa M |
25 - 32 |
To investigate interface shape and thermal stress during sapphire single crystal growth by the Cz method Fang HS, Pan YY, Zheng LL, Zhang QJ, Wang S, Jin ZL |
33 - 39 |
Purification of melt-spun metallurgical grade silicon micro-flakes through a multi-step segregation procedure Martinsen FA, Nordstrand EF, Gibson UJ |
40 - 43 |
Epitaxial growth of InGaAs on MgAl2O4 spinel for one-sun photovoltaics Rance WL, Norman AG, Ptak AJ |
44 - 48 |
Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition Ji L, Lu SL, Zhao YM, Tan M, Dong JR, Yang H |
49 - 54 |
Effect of solidification conditions on fractal dimension of dendrites Genau AL, Freedman AC, Ratke L |
55 - 60 |
Mechanism of specific influence of L-Glutamic acid on the shape of L-Valine crystals Yoshiura H, Nagano H, Hirasawa I |
61 - 68 |
Impurities in zone-refining anthracene crystals Hong IH, Tan KJ, Toh M, Jiang H, Zhang KK, Kloc C |
69 - 75 |
Growth of nanostructured CuO thin films via microplasma-assisted, reactive chemical vapor deposition at high pressures Koh T, O'Hara E, Gordon MJ |
76 - 79 |
Study on the growth of Nd3+:Gd3Ga5O12 (Nd:GGG) crystal by the Czochralski technique under different gas flow rates and using different crucible sizes for flat interface growth Zimik K, Chauhan RR, Kumar R, Murari K, Malhan N, Thakur HV |
80 - 85 |
Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature Liu HY, Tang GS, Zeng F, Pan F |
86 - 92 |
Characteristics of ZnO thin films doped by various elements Kahraman S, Cakmak HM, Cetinkaya S, Bayansal F, Cetinkara HA, Guder HS |
93 - 96 |
Determination of silicon oxide precipitate stoichiometry using global and local techniques Nicolai J, Burle N, Pichaud B |
97 - 104 |
Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals Sueoka K, Kamiyama E, Vanhellemont J |
105 - 108 |
Tetragonally strained BiFeO3 thin film on single crystal Rh substrate Maeng WJ, Son JY |
109 - 112 |
Optimization of GaN wafer bow grown on cone shaped patterned sapphire substrates Wang MT, Brunner F, Liao KY, Li YL, Tseng SH, Weyers M |
113 - 117 |
Growth and characterization of a-plane (11(2)over-bar0) GaN films on (010) LiGaO2 substrate by chemical vapor deposition Chou MMC, Chen CL, Chang CY, Li CA |
118 - 121 |
Growth and properties of LiNbO3 co-doped with Yb3+/Er3+/Mg2+ Zhang PX, Hang Y, Yin JG, Zhao CC, Gong J, He MZ, Zhang LH |
122 - 127 |
Growth and characterization of large, high quality MoSe2 single crystals Bougouma M, Batan A, Guel B, Segato T, Legma JB, Reniers F, Delplancke-Ogletree MP, Buess-Herman C, Doneux T |
128 - 131 |
High quality FeSb2 single crystal growth by the gradient freeze technique Cao YM, Yuan SJ, Liu M, Kang BJ, Lu B, Zhang JC, Cao SX |
132 - 140 |
Stability limits for the horizontal ribbon growth of silicon crystals Daggolu P, Yeckel A, Bleil CE, Derby JJ |
141 - 144 |
Selective formation of thickness-controlled fullerene disks by vapor-solid process Ahn SJ, Yang J, Lim KW, Shin HS |
145 - 149 |
Inclusion of inorganic polyoxomolybdate molecules into beta-cyclodextrin: By slow crystallization or rapid crystallization Shao K, Yuan QH |
150 - 157 |
Epitaxial growth of LaAlO3 on SrTiO3-buffered Si (001) substrates by atomic layer deposition Ngo TQ, Posadas A, McDaniel MD, Ferrer DA, Bruley J, Breslin C, Demkov AA, Ekerdt JG |
158 - 163 |
Si-SiC core-shell nanowires Ollivier M, Latu-Romain L, Martin M, David S, Mantoux A, Bano E, Souliere V, Ferro G, Baron T |
164 - 170 |
Urinary stone formation: Efficacy of seed extract of Ensete superbum (Roxb.) Cheesman on growth inhibition of calcium hydrogen phosphate dihydrate crystals Diana KJ, George KV |
171 - 175 |
Thermal shocks influence on the growth process and optical quality of Nd: YAG crystal Saeedi H, Yadegari M, Enayati S, Asadian M, Shojaee M, Khodaei Y, Mirzaei N, Asl IM |
176 - 184 |
Growth, morphology and anisotropic thermal properties of Nd-doped Sr3Y2(BO3)(4) crystal Pan ZB, Cong HJ, Yu HH, Zhang HJ, Wang JY, Boughton RI |
185 - 189 |
Leidenfrost temperature related CVD-like growth mechanism in ZnO-TFTs deposited by pulsed spray pyrolysis Ortel M, Wagner V |
190 - 194 |
p-type conductivity control of heteroepitaxially grown ZnO films by N and Te codoping and thermal annealing Park SH, Minegishi T, Oh DC, Chang JH, Yao T, Taishi T, Yonenaga I |
195 - 204 |
Application of the polyassociative solutions model to determine phase equilibrium in multicomponent A(2)B(6) semiconductor systems and ternery magnetic oxide systems Moskvin PP, Olchowik G, Olchowik JM |
205 - 210 |
Pseudomorphic growth and strain relaxation of alpha-Zn3P2 on GaAs(001) by molecular beam epitaxy Bosco JP, Kimball GM, Lewis NS, Atwater HA |
211 - 219 |
Synthesis, growth, spectral, thermal, mechanical and optical properties of piperazinium (meso)tartrate crystal: A third order nonlinear optical material Subhashini V, Ponnusamy S, Muthamizhchelvan C |
220 - 225 |
Growth and Raman spectrum of Ba2Mg(B3O6)(2) crystal Lv XS, Sun YL, Han J, Gu GX, Wan SM, Cheng MJ, Pan SL, Zhang QL |
226 - 233 |
The Czochralski growth and structural investigations of Ba(MoO4)(x)(WO4)(1-x) solid solution single crystals Isaev VA, Ignatiev BV, Lebedev AV, Avenesov SA, Plautskiy PG |
234 - 241 |
Formation mechanism and magnetic properties of barium hexaferrite quasi-single crystals fabricated via magnetic forming and liquid participation sintering Liu JL, Ye JM, Chen XL, Zhang XK, Ma ZX, Zhang M, Zeng YW, Zhang W, Guo CJ |
242 - 246 |
Effect of crucible coating on the grain control of multi-crystalline silicon crystal growth Tsai HW, Yang M, Chuck C, Lan CW |
247 - 252 |
Two-step epitaxial synthesis and layered growth mechanism of bisectional ZnO nanowire arrays Wang WD, Zhang Z, Liao QL, Yu T, Shen YW, Li PF, Huang YH, Zhang Y |
253 - 257 |
Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD Sozykin AS, Strelchenko SS, Prokolkin EV, Ladugin MA |
258 - 263 |
Antiphase domain annihilation during growth of GaP on Si by molecular beam epitaxy Lin AC, Fejer MM, Harris JS |
264 - 269 |
Laser-diode-heated floating zone (LDFZ) method appropriate to crystal growth of incongruently melting materials Ito T, Ushiyama T, Yanagisawa Y, Tomioka Y, Shindo I, Yanase A |
270 - 276 |
Laser-heated pedestal growth of cerium doped calcium scandate crystal fibers Philippen J, Guguschev C, Bertram R, Klimm D |
277 - 281 |
An energy-dispersive X-ray diffraction study of the nickel-sulfide assisted growth of RuS2 thin films by reactive magnetron sputtering Brunken S, Krause J, Ellmer K |
282 - 286 |
Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes Brault J, Damilano B, Kahouli A, Chenot S, Leroux M, Vinter B, Massies J |
287 - 293 |
Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD Lundskog A, Hsu CW, Nilsson D, Karlsson KF, Forsberg U, Holtz PO, Janzen E |
294 - 299 |
Dynamic and topographic observation of calcite dissolution using enhanced in-situ phase-shift interferometry Ueta S, Satoh H, Nishimura Y, Ueda A, Tsukamoto K |
300 - 307 |
Preparation and characterization of monodispersed BaTiO3 nanocrystals by sol-hydrothemal method Zheng HJ, Zhu KJ, Wu QL, Liu JS, Qiu JH |