Journal of Crystal Growth

Journal of Crystal Growth, Vol.384 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (24 articles)

1 - 4	Growth of TeO2 single crystals by the low temperature gradient Czochralski method with nonuniform heating Kokh AE, Shevchenko VS, Vlezko VA, Kokh KA
5 - 8	Nitrogen-induced localized level observed by photoreflectance in GaAsN thin films grown by chemical beam epitaxy Suzuki H, Suzuki A, Fukuyama A, Ikari T
9 - 12	Anomalous band bowing in pulsed laser deposited MgxZn1-xO films Agrawal A, Dar TA, Phase DM, Sen P
13 - 20	Numerical investigation of the influence of cooling flux on the generation of dislocations in cylindrical mono-like silicon growth Gao B, Kakimoto K
21 - 26	Chemical beam epitaxy growth and optimization of InAs/GaAs quantum dot multilayers Zribi J, Ilahi B, Morris D, Aimez V, Ares R
27 - 32	Effect of Ba substitution in CsSrI3:Eu2+ Wei H, Zhuravleva M, Yang K, Blalock B, Melcher CL
33 - 38	Synthesis of L-cystine nanotubes by alkalinization of L-cysteine in the presence of gallium nitride Arizaga GGC
39 - 43	Optical floating zone crystal growth and magnetic properties of MgCr2O4 Koohpayeh SM, Wen JJ, Mourigal M, Dutton SE, Cava RJ, Broholm CL, McQueen TM
44 - 49	Single-crystalline hafnium carbide nanowire growth below the eutectic temperature by CVD Tian S, Li HJ, Zhang YL, Zhang SY, Wang YJ, Ren JC, Qiang XF
50 - 54	Some physical effects of reaction rate on PbS thin films obtained by chemical bath deposition Altiokka B, Baykul MC, Altiokka MR
55 - 60	The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays Cherns D, Webster RF, Novikov SV, Foxon CT, Fischer AM, Ponce FA
61 - 65	The MOVPE growth mechanism of catalyst-free self-organized GaN columns in H-2 and N-2 carrier gases Wang X, Jahn U, Ledig J, Wehmann HH, Mandl M, Strassburg M, Waag A
66 - 70	Crystal growth of SaTi(2)O(5) by the floating zone method Katsui H, Shiga K, Tu R, Goto T
71 - 76	Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn Oehme M, Buca D, Kostecki K, Wirths S, Hollander B, Kasper E, Schulze J
77 - 81	Microscopic study of germanium nanowires grown via gold-catalyzed chemical vapor deposition below the eutectic temperature Simanullang M, Usami K, Kodera T, Kawano Y, Oda S
82 - 87	Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion Yan X, Zhang X, Li JS, Cui JG, Wang Q, Huang YQ, Ren XM
88 - 95	High temperature solution growth and characterization of Cr2AlC single crystals Ouisse T, Sarigiannidou E, Chaix-Pluchery O, Roussel H, Doisneau B, Chaussende D
96 - 99	Effect of growth temperature on the impurity incorporation and material properties of N-polar GaN films grown by metal-organic chemical vapor deposition Lin ZY, Zhang JC, Cao RT, Ha W, Zhang S, Chen X, Yan JD, Xu SR, Zhao Y, Li L, Hao Y
100 - 106	Growth of CuO nanowires on graphene-deposited Cu foil by thermal oxidation method Hien VX, Kim SY, Lee JH, Kim JJ, Heo YW
107 - 113	Twinning in multicrystalline silicon for solar cells Stokkan G
114 - 121	Nucleation and phase formation during reactive magnetron co-sputtering of Cu(In,Ga)S-2 films, investigated by in situ EDXRD Schulte J, Brunken S, Ellmer K
122 - 128	Numerical and experimental study of vacuum directional solidification purification process for SoG-Si in metallurgical route Luo T, Lv GQ, Ma WH, Wei KX, Yang X, Li SY
129 - 134	Comparison of the spiral growth modes of silicon-face and carbon-face silicon carbide crystals Seiss M, Ouisse T, Chaussende D
135 - 143	Synthesis, growth, spectral, thermal and crystallographic studies of 5 alpha,6 alpha-epoxycholestane single crystals Shamsuzzaman, Khanam H, Mashrai A, Ahmad M, Mabkhot YN, Frey W, Siddiqui N