1 - 4 |
Effect of H-2 carrier gas on the physical properties of a GaN layer grown using Ga2O vapor and NH3 Bu Y, Imade M, Kitamoto A, Yoshimura M, Isemura M, Mori Y |
5 - 10 |
Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy Albert S, Bengoechea-Encabo A, Sabido-Siller M, Mueller M, Schmidt G, Metzner S, Veit P, Bertram F, Sanchez-Garcia MA, Christen J, Calleja E |
11 - 19 |
Effect of (100) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs Galiev GB, Vasilevskii IS, Klimov EA, Pushkarev SS, Klochkov AN, Maltsev PP, Presniakov MY, Trunkin IN, Vasiliev AL |
20 - 29 |
Germanium nanowire synthesis using solid precursors Aksoy B, Kalay YE, Unalan HE |
30 - 33 |
Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on beta-Ga2O3 (010) substrates by molecular beam epitaxy Sasaki K, Higashiwaki M, Kuramata A, Masui T, Yamakoshi S |
34 - 40 |
Investigation of single crystal 4H-SiC growth by the Solvent-Laser Heated Floating Zone technique Woodworth AA, Neudeck PG, Sayir A, Sola F, Dudley M, Raghothamachar B |
41 - 48 |
Copper oxide nanorods assembly and their whisker transformation at liquid-liquid interface and on solid surfaces Al-Harthi SH, Widatallah HM, Al-Hinai AT, Elzain ME, Nishiyama H, Myint MTZ |
49 - 51 |
Aperiodic SiSn/Si multilayers for thermoelectric applications Tonkikh AA, Zakharov ND, Eisenschmidt C, Leipner HS, Werner P |
52 - 59 |
Formation of hollow bone-like morphology of calcium carbonate on surfactant/polymer templates Mantilaka MMMGPG, Pitawala HMTGA, Rajapakse RMG, Karunaratne DGGP, Wijayantha KGU |
60 - 65 |
Nitrogen doping of 4H-SiC by the top-seeded solution growth technique using Si-Ti solvent Kusunoki K, Kamei K, Seki K, Harada S, Ujihara T |
66 - 73 |
Germanium content and strain in Si1-xGex alloys characterized by Raman spectroscopy Rouchon D, Mermoux M, Bertin F, Hartmann JM |
74 - 80 |
Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers Mukherjee K, Beaton DA, Mascarenhas A, Bulsara MT, Fitzgerald EA |
81 - 86 |
Floating-zone growth and characterization of triangular lattice antiferromagnetic alpha-SrCr2O4 crystals Zhao L, Wang KJ, Wen MH, Wu MK |
87 - 91 |
Production method of carbamazepine/saccharin cocrystal particles by using two solution mixing based on the ternary phase diagram Kudo S, Takiyama H |
92 - 97 |
Optimization of power control in the reduction of basal plane dislocations during PVT growth of 4H-SiC single crystals Gao B, Kakimoto K |
98 - 101 |
Flux-Czochralski growth of Ca9Y(VO4)(7) crystal Sun SJ, Zhang LZ, Huang YS, Lin ZB, Wang GF |