Journal of Crystal Growth

Journal of Crystal Growth, Vol.403 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (23 articles)

1 - 2	Preface Freitas JA, Meissner E, Paskova T, Miyake H
3 - 6	Development of GaN wafers via the ammonothermal method Letts E, Hashimoto T, Hoff S, Key D, Male K, Michaels M
7 - 17	Improved growth rates and purity of basic ammonothermal GaN Pimputkar S, Kawabata S, Speck JS, Nakamura S
18 - 21	Highly transparent ammonothermal bulk GaN substrates Jiang WK, Ehrentraut D, Downey BC, Kamber DS, Pakalapati RT, Do Yoo H, D'Evelyn MP
22 - 28	Novel alkali metal amidogallates as intermediates in ammonothermal GaN crystal growth Zhang SY, Alt NSA, Schlucker E, Niewa R
29 - 31	Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor Baker T, Mayo A, Veisi Z, Lu P, Schmitt J
32 - 37	HVPE-GaN growth on misoriented ammonothermal GaN seeds Sochacki T, Amilusik M, Lucznik B, Fijalkowski M, Weyher JL, Nowak G, Sadovyi B, Kamler G, Kucharski R, Iwinska M, Grzegory I, Bockowski M
38 - 42	Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy Koyama K, Aida H, Kim SW, Ikejiri K, Doi T, Yamazaki T
43 - 47	Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy Novikov SV, Powell REL, Staddon CR, Kent AJ, Foxon CT
48 - 54	Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds Amilusik M, Sochacki T, Lucznik B, Fijalkowski M, Smalc-Koziorowska J, Weyher JL, Teisseyre H, Sadovyi B, Bockowski M, Grzegory I
55 - 58	Improved utilization efficiency of Ga source and flatness of GaN layer by pulsed-GaCl flow modulation on hydride vapor phase epitaxy Yamane K, Hashimoto Y, Okada N, Tadatomo K
59 - 65	Feasibility of density and viscosity measurements under ammonothermal conditions Steigerwald TG, Alt NSA, Hertweck B, Schluecker E
66 - 71	Structural defects in bulk GaN Liliental-Weber Z, dos Reis R, Mancuso M, Song CY, Grzegory I, Porowski S, Bockowski M
72 - 76	Optical and electrical properties of dislocations in plastically deformed GaN Yonenaga I, Ohno Y, Yao T, Edagawa K
77 - 82	Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange Weyher JL, Sochacki T, Amilusik M, Fijalkowski M, Lucznik B, Jakiela R, Staszczak G, Nikolenko A, Strelchuk V, Sadovyi B, Bockowski M, Grzegory I
83 - 89	Metastable nature of InN and In-rich InGaN alloys Ivanov SV, Shubina TV, Komissarova TA, Jmerik VN
90 - 95	Crystal polarity role in Mg incorporation during GaN solution growth Freitas JA, Feigelson BN, Anderson TJ
96 - 104	Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapes Erlekampf J, Seebeck J, Savva P, Meissner E, Friedrich J, Alt NSA, Schlucker E, Frey L
105 - 109	DFT study of ammonia desorption from the GaN(0001) surface covered with a NH3/NH2 mixture Kempisty P, Strak P, Sakowski K, Krukowski S
110 - 113	Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux technique Edgar JH, Hoffman TB, Clubine B, Currie M, Du XZ, Lin JY, Jiang HX
114 - 118	Vacancy-hydrogen complexes in ammonothermal GaN Tuomisto F, Kuittinen T, Zajac M, Doradzinski R, Wasik D
119 - 123	Optical and magnetic resonance studies of Be-doped GaN bulk crystals Glaser ER, Freitas JA, Storm DF, Teisseyre H, Bockowski M
124 - 127	Bulk properties of InN films determined by experiments and theory Kumar M, Baldissera G, Persson C, David DGF, da Silva MVS, Freitas JA, Tischler JG, Chubaci JFD, Matsuoka M, da Silva AF