Journal of Crystal Growth

Journal of Crystal Growth, Vol.405 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (24 articles)

1 - 5	Growth of (NaxKy)FezSe2 crystals by chlorides flux at low temperatures Wang G, Ying TP, Huang YB, Jin SF, Yan L, Ding H, Chen XL
6 - 10	Access and in situ growth of phosphorene-precursor black phosphorus Kopf M, Eckstein N, Pfister D, Grotz C, Kruger I, Greiwe M, Hansen T, Kohlmann H, Nilges T
11 - 15	Yb-doped LiGd1-xLux(WO4)(2) single crystal fibers grown from the melt and optical characterization Rekik B, Derbal M, Benamara O, Lebbou K
16 - 18	Growth of tellurium doped ultra-broadband tunnel junction for the next generation 5J solar cell Li XY, Zhang W, Lu HB, Chen KJ, Zhou DY
19 - 22	Thermodynamic study of beta-Ga2O3 growth by halide vapor phase epitaxy Nomura K, Goto K, Togashi R, Murakami H, Kumagai Y, Kuramata A, Yamakoshi S, Koukitu A
23 - 28	Effect of electromagnetic stirring on the enrichment of primary silicon from Al-Si melt Yu WZ, Ma WH, Lv GQ, Xue HY, Li SY, Dai YN
29 - 34	Morphological and structural evolution during thermally physical vapor phase growth of PbI2 polycrystalline thin films Sun H, Zhu XH, Yang DY, Yang J, Gao XY, Li X
35 - 38	Unique surface structure formations on a Ge-covered Si(110)-16 x 2 surface Yokoyama Y, Uozumi Y, Asaoka H
39 - 43	Facile synthesis of colloidal InAs nanocrystals using triphenylarsine as an arsenic source Uesugi H, Kita M, Omata T
44 - 51	High-speed growth of Si single bulk crystals by expanding low-temperature region in Si melt using noncontact crucible method Nakajima K, Morishita K, Murai R
52 - 58	Influence of temperature-dependent thermophysical properties of sapphire on the modeling of Kyropoulos cooling process Jin ZL, Fang HS, Yang N, Zhang Z, Wang S, Xu JF
59 - 63	Characterization of low angle grain boundary in large sapphire crystal grown by the Kyropoulos method Yu GJ, Hu XB, Wang XJ, Zong YM, Xu XG
64 - 67	Growth of crystallized AlOx on AlN/GaN heterostructures by in-situ RF-MBE Sugiura Y, Honda T, Higashiwaki M
68 - 72	Influence of the solution volume on the growth of C-60 nanowhiskers Miyazawa K, Hirata C, Wakahara T
73 - 80	Molecular orientation transformation of pentacene on amorphous SiO2: A computational study on the initial growth stage of physical vapor deposition Zeng YQ, Tao B, Yin ZP
81 - 86	Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays Li Q, Ng KW, Tang CW, Lau KM, Hill R, Vert A
87 - 91	Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application Kim TW, Kuech TF, Mawst LJ
92 - 96	Single crystal growth of TIMETAL LCB titanium alloy by a floating zone method Smilauerova J, Pospisil J, Harcuba P, Holy V, Janecek M
97 - 101	Growth and doping of semipolar GaN grown on patterned sapphire substrates Scholz F, Meisch T, Caliebe M, Schorner S, Thonke K, Kirste L, Bauer S, Lazarev S, Baumbach T
102 - 109	Structural characteristics of gallium metal deposited on Si (001) by MOCVD Werner K, Beyer A, Oelerich JO, Baranovskii SD, Stolz W, Volz K
110 - 121	Microstructual path analysis of polycrystalline solidification by using multi-phase-field method incorporating a nucleation model Nishida Y, Aiga F, Itoh S
122 - 130	Dissolution study of active pharmaceutical ingredients using molecular dynamics simulations with classical force fields Greiner M, Elts E, Schneider J, Reuter K, Briesen H
131 - 141	Defect formation induced by seed-joints during directional solidification of quasi-mono-crystalline silicon ingots Trempa M, Reimann C, Friedrich J, Muller G, Krause A, Sylla L, Richter T
142 - 149	Tunable synthesis of multi-shaped PbS via L-cysteine assisted solvothermal method Zhang BH, Guo FQ, Yang LH, Wang JJ