Journal of Crystal Growth

Journal of Crystal Growth, Vol.413 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (18 articles)

1 - 4	An investigation of sol-gel spin coating growth of wurtzite GaN thin film on 6H-SiC substrate Fong CY, Ng SS, Yam FK, Abu Hassan H, Hassan Z
5 - 11	Growth of (Sr,La)-(Ta,Ti)-O-N perovskite oxide and oxynitride films by radio frequency magnetron sputtering: Influence of the reactive atmosphere on the film structure Le Paven C, Le Gendre L, Benzerga R, Chevire F, Tessier F, Jacq S, Traore-Mantion S, Sharaiha A
12 - 16	Crystal twisting in Cz Si growth Kalaev V, Sattler A, Kadinski L
17 - 24	Silicon surface preparation for III-V molecular beam epitaxy Madiomanana K, Bahri M, Rodriguez JB, Largeau L, Cerutti L, Mauguin O, Castellano A, Patriarche G, Tournie E
25 - 30	Growth and morphological modeling of InP nanowires obtained by Au-catalyzed selective area MOMBE Dubrovskii VG, Timofeeva MA, Kelrich A, Ritter D
31 - 36	Controlled synthesis of tin-doped indium oxide (ITO) nanowires Li LP, Chen SK, Kim J, Xu C, Zhao Y, Ziegler KJ
37 - 41	Crystal growth of La3+-substituted BaCl2 by the micro-pulling-down technique and their luminescence properties Fukabori A
42 - 45	Real-time measurement of substrate temperature in molecular beam epitaxy using low-coherence tandem interferometry Yurasov DV, Luk'yanov AY, Volkov PV, Goryunov AV, Tertyshnik AD, Drozdov MN, Novikov AV
46 - 50	Flux crystal growth of Ba2TiOSi2O7 Zhao WW, Zhang FY, Liu J, Hao B, Pan SL, Zhang FF, Liu L
51 - 60	Growth and characterization of single phase AgInS2 crystals for energy conversion application through beta-In2S3 by thermal evaporation Gantassi A, Essaidi H, Ben Hamed Z, Gherouel D, Boubaker K, Colantoni A, Monarca D, Kouki F, Amlouk M, Manoubi T
61 - 66	X-ray diffraction imaging of ZnTe crystals grown by the multi-tube physical vapour transport technique Mullins JT, Dierre F, Tanner BK
67 - 70	Rapid growth of thin and flexible organic semiconductor single crystal Anthracene by solution growth technique for device fabrication Thirupugalmani K, Shanmugam G, Kannan V, Brahadeeswaran S
71 - 75	Solid-state tellurium doping of AllnP and its application to photovoltaic devices grown by molecular beam epitaxy Dai P, Tan M, Wu YY, Ji L, Bian LF, Lu SL, Yang H
76 - 80	Effects of incident UV light on the surface morphology of MBE grown GaAs Beaton DA, Sanders C, Alberi K
81 - 85	Properties of GaN layers grown on N-face free-standing GaN substrates Li X, Hemmingsson C, Forsberg U, Janzen E, Pozina G
86 - 93	Magnetic, optical and electrical characterization of SiC doped with scandium during the PVT growth Racka K, Avdonin A, Sochacki M, Tymicki E, Grasza K, Jakiela R, Surma B, Dobrowolski W
94 - 99	Strain-induced Ge segregation on Si at high temperatures Shklyaev AA, Ponomarev KE
100 - 104	Self-adjusted flux for the traveling solvent floating zone growth of YBaCuFeO5 crystal Lai YC, Shu GJ, Chen WT, Du CH, Chou FC