1 - 6 |
In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures Prall C, Kaspari C, Brunner F, Haberland K, Weyers M, Rueter D |
7 - 14 |
Controlled calcite nucleation on polarized calcite single crystal substrates in the presence of polyacrylic acid Wada N, Horiuchi N, Nakamura M, Nozaki K, Hiyama T, Nagai A, Yamashita K |
15 - 19 |
Two-step thermal process in tellurium vapor for tellurium inclusion annealing in high resistivity CdZnTe crystals Piacentini G, Zambelli N, Benassi G, Calestani D, Pavesi M, Zappettini A |
20 - 24 |
Crystal growth and thermal properties of the laser crystal Yb3(+):Gd-3(AlxGa1-x)(5)O-12 Li YB, Jia ZT, Zhang BT, He JL, Tao XT |
25 - 30 |
Study on third order nonlinear optical properties of a metal organic complex-Monothiourea-cadmium Sulphate Dihydrate single crystals grown in silica gel Sivanandan T, Kalainathan S |
31 - 35 |
Structural and magnetic properties of hexagonal Cr1-delta Te films grown on CdTe(001) by molecular beam epitaxy Kanazawa K, Yamawaki K, Sekita N, Nishio Y, Kuroda S, Mitome M, Bando Y |
36 - 40 |
Growth of iron nitride thin films by molecular beam epitaxy Naito M, Uehara K, Takeda R, Taniyasu Y, Yamamoto H |
41 - 46 |
A novel micropatterning of luminescent barium carbonate nanowires controlled by a phosphonated copolymer Cui MF, Zhu JH, Su YP |
47 - 50 |
Laser-induced increase of resistivity and improvement of optical properties of CdZnTe crystal Mychko A, Medvid A, Dauksta E |
51 - 56 |
Si3N4/fused quartz composite crucible with enhanced thermal conductivity for multicrystalline silicon ingot growth Zhao LL, Lv TZ, Zhu QS |
57 - 64 |
On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers Koleske DD, Fischer AJ, Bryant BN, Kotula PG, Wierer JJ |
65 - 71 |
Studies on sulfur doping and figure of merit in vapor grown Sb2Te3 platelet crystals Thankamma G, Kunjomana AG |
72 - 77 |
A novel MOCVD reactor for growth of high-quality GaN-related LED layers Hu SL, Liu S, Zhang Z, Yan H, Gan ZY, Fang HS |
78 - 83 |
Chemical vapor deposition of m-plane and c-plane InN nanowires on Si (100) substrate Rafique S, Han L, Zhao HP |
84 - 92 |
Mutual relation among lattice distortion, Hall effect property and band edge cathodoluminescence of heavily-boron-doped microwave-plasma CVD diamond films homoepitaxially grown on vicinal (001) high-pressure/high-temperature-synthesized Ib substrates Mori R, Maida O, Ito T |
93 - 99 |
Thin films of tin(II) sulphide (SnS) by aerosol-assisted chemical vapour deposition (AACVD) using tin(II) dithiocarbamates as single-source precursors Kevin P, Lewis DJ, Raftery J, Malik MA, O'Brien P |
100 - 105 |
Influence of thallium and salicylic acid impurities as well as of the solution stoichiometry on the growth kinetics of prismatic ADP crystal faces Voronov AP, Babenko GN, Puzikov VM, Roshal AD, Iurchenko AN |
106 - 110 |
Growth and green defect emission of ZnPbO nanorods by a catalyst-assisted thermal evaporation-oxidation method Tsega M, Kuo DH, Dejene FB |
111 - 117 |
The solid-solution region for the langasite-type Ca3TaGa3Si2O14 crystal as determined by a lever rule Zhao HY, Uda S, Maeda K, Nozawa J, Koizumi H, Fujiwara K |
118 - 122 |
Single-crystal growth of Mg- and Ni-doped chain compound SrCuO2 by the traveling-solvent floating-zone method and chain breaking effect induced by the dopants Saint-Martin R, Berthet P, Revcolevschi A |
123 - 126 |
Solid-state reaction synthesis and characterization of PrB6 nanocrystals Wei W, Bao LH, Li YJ, Chao LM, Tegus O |
127 - 131 |
Understanding of the mechanism of pulsed NH3 growth in metalorganic chemical vapor deposition Song J, Chen DT, Han J |
132 - 138 |
Growth and characterization of LiInSe2 single crystals Maa TH, Zhu CQ, Lei ZT, Yang CH, Sun L, Zhang HC |
139 - 145 |
Gallium nitride porous microtubules self-assembled from wurtzite nanorods Lan YC, Lin F, Li Y, Dias YM, Wang H, Liu Y, Yang Z, Zhou HQ, Lu YL, Bao JM, Ren ZF, Crimp MA |
146 - 151 |
Compensation mechanism of bromine dopants in cadmium telluride single crystals Gorichok IV, Fochuk PM, Verzhak YV, Parashchuk TO, Freik DM, Panchuk OE, Bolotnikov AE, James RB |
152 - 157 |
Investigation on orientation, epitaxial growth and microstructure of a-axis-, c-axis-, (103)/(110)- and (113)-oriented YBa2Cu3O7-delta films prepared on (001), (110) and (111) SrTiO3 single crystalsubstrates by spray at omizing and coprecipitating laser chemical vapor deposition Zhao P, Wang Y, Huang ZL, Mao YW, Xu YL |
158 - 165 |
Thermodynamic analysis and growth of ZnSe single crystals in Zn-Se-I-2 system Li HY, Gu Z, Zhang HY, Li WW |
166 - 169 |
Growth of boron-doped diamond nanoclusters using the HFCVD technique Azadfar P, Ghoranneviss M, Elahi SM, Farhadyar N, Elahi AS |
170 - 175 |
Origin of faceted surface hillocks on semi-polar (11(2)over-bar2) GaN templates grown on pre-structured sapphire Han YS, Caliebe M, Kappers M, Scholz F, Pristovsek M, Humphreys C |
176 - 176 |
Growth mechanisms in semipolar (20(2)over-bar1) and nonpolar m plane (10(1)over-bar0) AlGaN/GaN structures grown by PAMBE under N-rich conditions (vol 377C, pg 184, 2013) Sawicka M, Cheze C, Turski H, Smalc-Koziorowska J, Krysko M, Kret S, Remmele T, Albrecht M, Cywinski G, Grzegory I, Skierbiszewski C |