| 1 - 5 |
The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy
Bomphrey JJ, Ashwin MJ, Jones TS |
| 6 - 10 |
Single crystalline 3C-SiC nanowires grown on the diamond surface with the assistance of graphene
Dai W, Yu JH, Wang Y, Song YZ, Bai H, Jiang N |
| 11 - 16 |
Synthesis, crystal growth, solubility, structural, optical, dielectric and microhardness studies of Benzotriazole-4-hydroxybenzoic acid single crystals
Silambarasan A, Kumar MK, Thirunavukkarasu A, Kumar RM, Umarani PR |
| 17 - 21 |
Molecular beam epitaxy and characterizations of PbTe grown on GaAs (211) substrates using CdTe/ZnTe buffers
Shu TY, Lu PQ, Zhang BP, Wang M, Chen L, Fu XL, Xu GY, Wu HZ |
| 22 - 31 |
Beware of poor-quality MgO substrates: A study of MgO substrate quality and its effect on thin film quality
Schroeder JL, Ingason AS, Rosen J, Birch J |
| 32 - 36 |
High-index Cu2O (113) film on faceted MgO (110) by molecular beam epitaxy
Huo WX, Shi JA, Mei ZX, Liu LS, Li JQ, Gu L, Du XL, Xue QK |
| 37 - 41 |
Metal organic vapor phase epitaxy of hexagonal Ge-Sb-Te (GST)
Schuck M, Riess S, Schreiber M, Mussler G, Grutzmacher D, Hardtdegen H |
| 42 - 46 |
Enhanced synthesis of Sn nanowires with aid of Se atom via physical vapor transport
Cai HC, Wang WD, Liu PW, Wang GM, Liu AK, He Z, Cheng ZF, Zhang SL, Xia MG |
| 47 - 56 |
Bottom-up engineering of InAs at the nanoscale: From V-shaped nanomembranes to nanowires
Russo-Averchi E, Tutuncuoglu G, Dalmau-Mallorqui A, Mundet IC, de la Mata M, Ruffer D, Arbiol J, Conesa-Boj S, Morral AFI |
| 57 - 63 |
Instability of thermocapillary convection in long liquid bridges of high Prandtl number fluids in microgravity
Nishino K, Yano T, Kawamura H, Matsumoto S, Ueno I, Ermakov MK |
| 64 - 73 |
Growth of InGaN nanopyramid arrays on Si for potential photovoltaic applications
Ho JW, Tan RJN, Heuken M, Tay AAO, Chua SJ |
| 74 - 79 |
Minority lifetime degradation of silicon wafers after electric zone melting
Wu MC, Yang CF, Lan CW |
| 80 - 83 |
Thermal analysis of the growth process of synthetic diamond in the large volume cubic press apparatus with large deformation of high pressure cell
Zhang QC, Li R, Gu X, Qin JM, Jia XP, Ma HG |
| 84 - 89 |
A sample chamber for in situ high-energy X-ray studies of crystal growth at deeply buried interfaces in harsh environments
de Jong AEF, Vonk V, Honkimaki V, Gorges B, Vitoux H, Vlieg E |
| 90 - 93 |
High-quality single crystal growth and spin flop of multiferroic Co4Nb2O9
Cao YM, Yang YL, Xiang ML, Feng ZJ, Kang BJ, Zhang JC, Ren W, Cao SX |
| 94 - 100 |
End to end assembly of CaO and ZnO nanosheets to propeller-shaped architectures by orientation attachment approaches
Zhang Y, Liu F |
| 101 - 108 |
Transient segregation behavior in Cd1-xZnxTe with low Zn content-A qualitative and quantitative analysis
Neubert M, Jurisch M |
