Journal of Crystal Growth

Journal of Crystal Growth, Vol.426 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (44 articles)

1 - 8	Examination of the interaction between liquid silicon and bulk silicon carbide Roger J, Marchais A, Le Petitcorps Y
9 - 14	Synthesis, growth, structural, optical and thermal properties of a new organic nonlinear optical crystal: 2-amino 5-chloropyridinium-L-tartarate Jayanalina T, Rajarajan G, Boopathi K, Sreevani K
15 - 24	The deposition parameters in the synthesis of CVD microcrystalline diamond powders optimized by the orthogonal experiment Zhang T, Liu X, Sun FH, Zhang ZM
25 - 32	Novel solvents for the single crystal growth of germanate phases by the flux method Ivanov VA, Marychev MO, Andreev PV, Koseva I, Tzvetkov P, Nikolov V
33 - 37	Crystal growth of barium nitrate on thiol-terminated self-assembled monolayers and a Raman spectroscopic investigation of the crystal facets Lu F, Zhao B, Li R, Ruan WD
38 - 48	Empirical correlations for natural convection, Delta and k(eff) Ostrogorsky AG
49 - 53	The growth of Sea-urchin-like AlN nanostructures by modified CVD and their Field Emission properties Guo LA, Chen GD, Zhu YZ, Duan XY, Ye HG
54 - 60	MOVPE growth of Ga(AsBi)/GaAs using different metalorganic precursors Nattermann L, Ludewig P, Meckbach L, Ringler B, Keiper D, von Hanisch C, Stolz W, Volz K
61 - 65	Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer carbon on top Itoh Y, Hatakeyama S, Kawashima T, Washio K
66 - 70	Heterogenous nucleation in a cave with an apex and iso-curvature lateral surface Li XM, Liu QH
71 - 74	Optical in situ calibration of Sb for growing disordered GaInP by MOVPE Barrigon E, Barrutia L, Rey-Stolle I
75 - 81	Chemical vapor deposition of Si:C and Si:C:P films-Evaluation of material quality as a function of C content, carrier gas and doping Dhayalan SK, Loo R, Hikavyy A, Rosseel E, Bender H, Richard O, Vandervorst W
82 - 85	A study of the growth rate of GaSb using TEGa and TMSb or TESb Bhat R, Caneau CG
86 - 94	Growth, crystalline perfection, optical, thermal, laser damage threshold and electrical characterization of melaminium levulinate monohydrate single crystal Sivakumar N, Kanagathara N, Bhagavannarayana G, Kalainathan S, Anbalagan G
95 - 102	Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2 Leung B, Tsai MC, Song J, Zhang Y, Xiong KL, Yuan G, Coltrin ME, Han J
103 - 109	Growth and characterization of Piperazinium adipate: A third order NLO single crystal Dhanalakshmi B, Ponnusamy S, Muthamizhchelvan C, Subhashini V
110 - 116	Optimization of the high-performance multi-crystalline silicon solidification process by insulation partition design using transient global simulations Wu ZY, Zhong GX, Zhang ZY, Zhou XC, Wang ZX, Huang XM
117 - 122	Investigation of gamma'-Fe4N thin films deposited on Si(100) and GaAs (100) substrates by facing target magnetron sputtering Na YY, Wang C, Xiang JZ, Ji NA, Wang JP
123 - 128	Synthesis of large optically clear SAPO-47 single crystals using n-propylamine as template Xu XT, Zhai JP, Chen YP, Li IL, Ruan SC, Tang ZK
129 - 134	Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy Adolph D, Tingberg T, Lye T
135 - 140	Growth and characterization of L-lysinium succinate single crystal Kalaivani D, Arthi D, Mukunthan A, Jayaraman D, Joseph V
141 - 146	Synthesis and characterization of wires-like ZnO structures grown on a graphite support by microwave irradiation Mora-Hernandez JM, Arce-Estrada EM, Zarazua-Villalobos L, Estrada-Flores M, Medina-Flores J, German CRS
147 - 152	Evaluation of growth mode and optimization of growth parameters for GaAs epitaxy in V-shaped trenches on Si Li SY, Zhou XL, Kong XT, Li MK, Mi JP, Bian J, Wang W, Pan JQ
153 - 158	Photo-etching of GaN: Revealing nano-scale non-homogeneities Weyher JL, Smalc-Koziorowska J, Bankowska M, Dziecielewski I, Marona L, Perlin P
159 - 167	Growth and characterisation of a new polymorph of strontium D, L-malate: A metal organic frame work Nair LP, Bijini BR, Prasanna S, Eapen SM, Kumar BSD, Nair CMK, Deepa M, RajendraBabu K
168 - 172	GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid Chen WJ, Lin JL, Hu GH, Han XB, Liu MG, Yang YB, Wu ZS, Liu Y, Zhang BJ
173 - 179	Structural and compositional investigations of vapour grown CdTe:Cr single crystals Popovych VD, Sagan P, Bester M, Cieniek B, Kuzma M
180 - 185	Interruption-free growth of 10 mu m-thick GaN film prepared on sputtered AlN/PSS template by hydride vapor phase epitaxy Chen YA, Kuo CH, Wu JP, Chang CW
186 - 197	A method for flattening the solidification front in directional solidification technology Lian YY, Li DC, Zhang K
198 - 201	Growth of sodium chlorate crystals in the presence of potassium sulphate Kim EL, Tsyganova AA, Vorontsov DA, Ovsetsina TI, Katkova MR, Lykov VA, Portnov VN
202 - 207	Effect of calcium-oxide on the removal of calcium during industrial directional solidification of upgraded metallurgical-grade silicon Gan CH, Zeng X, Fang M, Zhang L, Qiu S, Li JT, Jiang DC, Tan Y, Luo XT
208 - 213	Single crystal growth and characterization of kagome-lattice shandites Co3Sn2 _xInxS2 Kassem MA, Tabata Y, Waki T, Nakamura H
214 - 220	Structure of alpha,omega-bis-(pentane-2,4-dione-3-ylmethylsulfanyl)alkanes and even/odd crystallization effects Khalilov LM, Tulyabaev AR, Mescheryakova ES, Akhmadiev NS, Timirov YI, Skaldin OA, Akhmetova VR
221 - 227	Effect of methane concentration in hydrogen plasma on hydrogen impurity incorporation in thick large-grained polycrystalline diamond films Tang CJ, Fernandes AJS, Jiang XF, Pinto JL, Ye H
228 - 233	Sequential microwave-assisted ultra-fast ZnO nanorod growth on optimized sol-gel seedlayers Soleimanzadeh R, Mousavi MSS, Mehrfar A, Esfahani ZK, Kolandouz M, Zhang K
234 - 242	Influence of protein solution in nucleation and optimized formulation for the growth of ARM lipase crystal Abd Rahman RNZR, Masomian M, Leow ATC, Ali MSM
243 - 247	Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers Orzali T, Vert A, Lee RTP, Norvilas A, Huang G, Herman JL, Hill RJW, Rao SSP
248 - 254	Appearance of [110] orientated growth layer on (100) face and exposure of (111) faces of cubic bismuth phosphate crystal Ding JX, Zhao Y, Cui HZ, Gu YJ, Wang YM, Liu HQ, Xu GG, Han Y
255 - 264	Jamin-interferometer-setup for the determination of concentration and temperature dependent face-specific crystal growth rates from a single experiment Eder C, Choscz C, Muller V, Briesen H
265 - 269	Growth and structure determination of ZrSTe-A new ternary phase of transition metal chalcogenides Dasadia AK, Nariya BB, Jani AR
270 - 275	Investigation of structural defects in In-doped CdZnTe under different in-situ annealing cooling rates Xing XB, Min JH, Liang XY, Zhang JJ, Wang LJ, Yang LQ, Ling YP, Duan L, Shen Y
276 - 282	Morphology of diamond crystals grown in magnesium-based systems at high temperatures and high pressures Khokhryakov AF, Sokol AG, Borzdov YM, Palyanov YN
283 - 286	Evolution of epilayer tilt in thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy Schulte KL, Strand MT, Kuech TF
287 - 292	Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates Wang XY, Du WN, Yang XG, Zhang XW, Yang T