Journal of Crystal Growth

Journal of Crystal Growth, Vol.430 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (22 articles)

1 - 6	Morphology evolution of MoS2 nanorods grown by chemical vapor deposition Han SM, Luo XF, Cao YJ, Yuan CL, Yang Y, Li QL, Yu T, Ye SL
7 - 13	Growth and morphology of 1,3,5,7-tetranitro-1,3,5,7-tetraazacy-clooct ane (HMX) crystal Yan T, Wang JH, Liu YC, Zhao J, Yuan JM, Guo JH
14 - 20	Anisotropy of strain relaxation in heterogeneous GaInNAs layers grown by AP-MOVPE Gelczuk L, Pucicki D, Serafinczuk J, Dabrowska-Szata M, Dluzewski P
21 - 27	Principles of electroless photoetching of non-uniformly doped GaN: Kinetics and defect revealing Weyher JL, van Dorp DH, Kelly JJ
28 - 33	Low temperature growth of europium doped Ga2O3 luminescent films Chen ZW, Saito K, Tanaka T, Nishio M, Arita M, Guo QX
34 - 40	Synthesis of uniformly distributed single- and double-sided zinc oxide (ZnO) nanocombs Yildirim OA, Liu YZ, Petford-Long AK
41 - 45	Incorporation of air-cavity into sapphire substrate and its effect on GaN growth and optical properties Jang J, Moon D, Lee HJ, Lee D, Choi D, Bae D, Yuh H, Moon Y, Park Y, Yoon E
46 - 51	A study of radiation effects on LuAG:Ce(Pr) co-activated with Ca Petrosyan AG, Ovanesyan KL, Derdzyan MV, Ghambaryan I, Patton G, Moretti F, Auffray E, Lecoq P, Lucchini M, Pauwels K, Dujardin C
52 - 54	Crystal growth and characterization of the quasi-one-dimensional compound BaCoO3 Wang HD, Yang JH, Dong CH, Mao QH, Du JH, Fang MH
55 - 62	Stoichiometric, epitaxial ZrB2 thin films with low oxygen-content deposited by magnetron sputtering from a compound target: Effects of deposition temperature and sputtering power Tengdelius L, Greczynski G, Chubarov M, Lu J, Forsberg U, Hultman L, Janzen E, Hogberg H
63 - 70	Numerical examination of the effect of steady crucible rotation in the liquid phase diffusion growth of SiGe Sekhon M, Dost S
71 - 74	Effect of nitrogen impurity on etching of synthetic diamond crystals Khokhryakov AF, Palyanov YN
75 - 79	Tuning band gap and ferromagnetism in epitaxial Al-doped SnO2 films by defect engineering Yang YZ, Zhou W, Liang YH, Liu L, Wu P
80 - 86	Microstructure evolution of directionally solidified Sn-Bi alloy under different medium-density direct current Zhang LM, Li N, Xing H, Zhang R, Song KK, Du LF, Yin PF, Yang CY
87 - 92	Growth of In As nanowires with the morphology and crystal structure controlled by carrier gas flow rate Li M, Wang JY, Li K, Xing YJ, Xu HQ
93 - 97	InN nanocolumns grown by molecular beam epitaxy and their luminescence properties Wang K, Araki T, Yamaguchi T, Chen YT, Yoon E, Nanishi Y
98 - 102	Effect of solidification conditions on the silicon growth and refining using Si-Sn melt Ma XD, Lei Y, Yoshikawa T, Zhao BJ, Morita K
103 - 107	Investigation of Te atmosphere annealing on the properties of detector-grade CdMnTe:In single crystals Yu PF, Luan LJ, Du YY, Zheng JH, Jie WQ
108 - 115	GaAs nanowires grown by Ga-assisted chemical beam epitaxy: Substrate preparation and growth kinetics Nunez CG, Brana AF, Lopez N, Garcia BJ
116 - 121	Growth and characterization of large CeAlO3 perovskite crystals Arhipov P, Tkachenko S, Gerasymov L, Sidletskiy O, Hubenko K, Vasyukov S, Shiran N, Baumer V, Mateychenko P, Fedorchenko A, Zorenko Y, Zhydacheyskii Y, Lebbou K, Korjik M
122 - 137	A real-time synchrotron X-ray study of primary phase nucleation and formation in hypoeutectic Al-Si alloys Prasad A, McDonald SD, Yasuda H, Nogita K, StJohn DH
138 - 147	Solute segregation in directional solidification: Scaling analysis of the solute boundary layer coupled with transient hydrodynamic simulations Chatelain M, Albaric M, Pelletier D, Botton V