Journal of Crystal Growth

Journal of Crystal Growth, Vol.434 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (23 articles)

1 - 6	Thin single-crystalline Bi-2(Te1-xSex)(3) ternary nanosheets synthesized by a solvothermal technique Guo J, Jian JK, Zhang ZH, Wu R, Li J, Sun YF
7 - 12	Controllable synthesis and characterization of alpha-MnO2 nanowires Hu XL, Zhu SF, Huang HH, Zhang JB, Xu YQ
13 - 18	Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer Monteagudo-Lerma L, Valdueza-Felip S, Nunez-Cascajero A, Ruiz A, Gonzalez-Herraez M, Monroy E, Naranjo FB
19 - 24	Large scale synthesis of nanoporous BN flake with high surface areas Zhu HL, Han QX, Wu J, Meng XL, Cui HZ
25 - 29	Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells Lekhal K, Hussain S, De Mierry P, Vennegues P, Nemoz M, Chauveau JM, Damilano B
30 - 35	Nitrate (chloride) melts as media for crystal growth of complex phosphates of alkali and trivalent metals Livitska O, Strutynska N, Zatovsky I, Slobodyanik N, Odinets E
36 - 41	Impact of high microwave power on hydrogen impurity trapping in nanocrystalline diamond films grown with simultaneous nitrogen and oxygen addition into methane/hydrogen plasma Tang CJ, Fernandes AJS, Jiang XF, Pinto JL, Ye H
42 - 46	Self-assembled growth of BiFeO3 meso-octahedral particles synthesized by a facile surfactant-free hydrothermal method Hou L, Lu ZY, Dai YC, Zuo KH, Xia YF, Ren ZM, Wu J, Lu XG, Zeng YP, Li X
47 - 54	Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE Torelly G, Jakomin R, Pinto LD, Pires MP, Ruiz J, Caldas PG, Prioli R, Xie H, Ponce FA, Souza PL
55 - 61	Effect of rotational speed on rapid separation of primary silicon from an Al-Si alloy by novel centrifugation Youn JW, Jeon JB, Seo KH, Kim SJ, Kim KY
62 - 66	Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults Lutsenko EV, Rzheutski MV, Pavlovskii VN, Yablonskii GP, Alanzi M, Hamidalddin A, Alyamani A, Mauder C, Kalisch H, Reuters B, Heuken M, Vescan A, Naresh-Kumar G, Trager-Cowan C
67 - 71	Ca2SnS4: Crystal structure, optical property, and electronic structure Zhou ML, Jiang XX, Li C, Lin ZS, Yao JY, Wu YC
72 - 76	Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree Bouazizi H, Chaaben N, El Gmili Y, Bchetnia A, Salvestrini JP, El Jani B
77 - 80	Formation of SiC layer by carbonization of Si surface using CO gas Deura M, Fukuyama H
81 - 87	InAs nanostructures grown by droplet epitaxy directly on InP(001) substrates Fuster D, Abderrafi K, Alen B, Gonzalez Y, Wewior L, Gonzalez L
88 - 95	Influence of different seed materials on multi-crystalline silicon ingot properties Reimann C, Trempa M, Lehmann T, Rosshirt K, Stenzenberger J, Friedrich J, Hesse K, Dornberger E
96 - 103	Influence of Al content on non-equilibrium solidification behavior of Ni-Al-Ta model single crystal alloys Ai C, Zhou J, Zhang H, Zhao XB, Pei YL, Li SS, Gong SK
104 - 109	Poly(acrylic acid) to induce competitive crystallization of a theophylline/oxalic acid cocrystal and a theophylline polymorph Jang J, Kim IW
110 - 115	Numerical study on the radial dopant distribution in micro-pulling-down crystal growth Zeng Z, Qiao L, Liu YP, Yokota Y, Kawazoe Y, Yoshikawa A
116 - 122	CBr4-based in-situ etching of GaAs, assisted with TMAl and TMGa Della Casa P, Maassdorf A, Zeimer U, Weyers M
123 - 127	Origins of hillock defects on GaN templates grown on Si(111) Han Y, Zhu D, Zhu T, Humphreys CJ, Wallis DJ
128 - 137	Investigations of interstitial generations near growth interface depending on crystal pulling rates during CZ silicon growth by detaching from the melt Abe T, Takahashi T, Shirai K, Zhang XW
138 - 147	Computational fluid dynamics-aided analysis of a hydride vapor phase epitaxy reactor Schulte KL, Simon J, Roy A, Reedy RC, Young DL, Kuech TF, Ptak AJ