Journal of Crystal Growth

Journal of Crystal Growth, Vol.435 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (19 articles)

1 - 5	Reinvestigation on the phase transition of a LiB3O5 crystal near its melting point Wan SM, Zheng GM, Feng DX, Yao YN, Zhao Y, You JL, Hu ZG
6 - 11	Growth of high Mg content wurtzite MgZnO epitaxial films via pulsed metal organic chemical vapor deposition Alema F, Ledyaev O, Miller R, Beletsky V, Osinsky A, Schoenfeld WV
12 - 18	Effect of V/III ratio on the growth of (11(2)over-bar2) AlGaN by metalorganic vapour phase epitaxy Dinh DV, Alam SN, Parbrook PJ
19 - 23	Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation Urakami N, Yamane K, Sekiguchi H, Okada H, Wakahara A
24 - 30	Effect of ultrasonic melt treatment on the refinement of primary Al3Ti intermetallic in an Al-0.4Ti alloy Wang F, Eskin D, Connolley T, Mi JW
31 - 36	Growth of long undoped and Ce-doped LuAG single crystal fibers for dual readout calorimetry Kononets V, Auffray E, Dujardin C, Gridin S, Moretti F, Patton G, Pauwels K, Sidletskiy O, Xu X, Lebbou K
37 - 41	Development of simultaneous control of polymorphism and morphology in indomethacin crystallization Wada S, Kudo S, Takiyama H
42 - 45	Czochralski growth of the mixed halides BaBrCl and BaBrCl:Eu Yan Z, Shalapska T, Bourret ED
46 - 49	Growth and characterization of epitaxial NiMnSb/ZnTe/NiMnSb magnetic multilayers Gerhard F, Naydenova T, Baussenwein M, Schumacher C, Gould C, Molenkamp LW
50 - 55	Parameters influencing interfacial morphology in GaAs/Ge superlattices grown by metal organic chemical vapor deposition Jia R, Fitzgerald EA
56 - 61	Characterization of 6.1 angstrom III-V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy Craig AP, Carrington PJ, Liu H, Marshall ARJ
62 - 67	ErAsSb nanoparticle growth on GaAs surface by molecular beam epitaxy Zhang YC, Eyink KG, Peoples J, Mahalingam K, Hill M, Grazulis L
68 - 75	Application of porous interface on segregation in Czochralski crystal growth Asadian M, Saeedi H
76 - 83	Properties of AlN film grown on Si (111) Dai YQ, Li SM, Sun Q, Peng Q, Gui CQ, Zhou Y, Liu S
84 - 90	Design of a high temperature chemical vapor deposition reactor in which the effect of the condensation of exhaust gas in the outlet is minimized using computational modeling Yoon JY, Kim BG, Nam DH, Yoo CH, Lee MH, Seo WS, Shul YG, Lee WJ, Jeong SM
91 - 97	Growth of multicrystalline silicon ingot with both enhanced quality and yield through quartz seeded method Zhang HL, You D, Huang CL, Wu YH, Xu Y, Wu P
98 - 104	Investigation of the L-Glutamic acid polymorphism: Comparison between stirred and stagnant conditions Tahri Y, Gagniere E, Chabanon E, Bounahmidi T, Mangin D
105 - 109	Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO Pantzas K, Rogers DJ, Bove P, Sandana VE, Teherani FH, El Gmili Y, Molinari M, Patriarche G, Largeau L, Mauguin O, Suresh S, Voss PL, Razeghi M, Ougazzaden A
110 - 113	Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells Hinostroza IEO, Avalos-Borja M, Garcia VDC, Zamora CC, Rodriguez AG, Luna EL, Vidal MA