Journal of Crystal Growth

Journal of Crystal Growth, Vol.440 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (19 articles)

1 - 5	Effects of continuously or step-continuously graded buffer on the performance of wavelength extended InGaAs photodetectors Du B, Gu Y, Zhang YG, Chen XY, Xi SP, Ma YJ, Ji WY, Shi YH, Li X, Gong HM
6 - 12	Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping Berger C, Lesnik A, Zettler T, Schmidt G, Veit P, Dadgar A, Blasing J, Christen J, Strittmatter A
13 - 16	Experimental determination of dependence of vertical growth rate on surface supersaturation in GaAs(001) microchannel epitaxy and growth optimization Tomita M, Mizuno Y, Takakura H, Kambayashi D, Naritsuka S, Maruyama T
17 - 25	Growth and characterization studies of pure and tartaric acid doped benzilic acid crystals Gilda MJJB, Devarajan PA
26 - 30	Growth and characterization of large weak topological insulator Bi2TeI single crystal by Bismuth self-flux method Ryu G, Son K, Schutz G
31 - 37	Wetting and infiltration of nitride bonded silicon nitride by liquid silicon Schneider V, Reimann C, Friedrich J
38 - 46	XRMON-SOL: Isothermal equiaxed solidification of a grain refined Al-20 wt%Cu alloy Murphy AG, Mathiesen RH, Houltz Y, Li J, Lockowandt C, Henriksson K, Zimmermann G, Melville N, Browne DJ
47 - 54	Unidirectional growth of non-linear optical triglycine calcium dibromide single crystal by a Sankaranaryanan-Ramasamy method Rao GB, Rajesh P, Ramasamy P
55 - 61	Comparative study of the effects of phosphorus and boron doping in vapor-liquid-solid growth with fixed flow of silicon gas Islam MS, Mehedi IM
62 - 68	Group V sensitive vapor-liquid-solid growth of Au-catalyzed and self-catalyzed III-V nanowires Dubrovskii VG
69 - 75	Influence of trench period and depth on MOVPE grown (11(2)over-bar2) GaN on patterned r-plane sapphire substrates. Caliebe M, Tandukar S, Cheng ZZ, Hocker M, Han YS, Meisch T, Heinz D, Huber F, Bauer S, Plettl A, Humphreys C, Thonke K, Scholz F
76 - 80	Controlled sputtering of AIN (002) and (101) crystal orientations on epitaxial 3C-SiC-on-Si (100) substrate Iqbal A, Walker G, Iacopi A, Mohd-Yasin F
81 - 85	Catalyst-free growth of InP nanowires on patterned Si (001) substrate by using GaAs buffer layer Li SY, Zhou XL, Kong XT, Li MK, Mi JP, Pan JQ
86 - 95	Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates Bergamaschini R, Salvalaglio M, Scaccabarozzi A, Isa F, Falub CV, Isella G, von Kanel H, Montalenti F, Miglio L
96 - 101	GaN nanowire arrays by a patterned metal-assisted chemical etching Wang KC, Yuan GD, Wu RW, Lu HX, Liu ZQ, Wei TB, Wang JX, Li JM, Zhang WJ
102 - 106	Size-controlled bismuth nanoparticles physically grown by the support of cobalt atomic flux Lee HS, Noh JS
107 - 109	Comments on recently published "L-threonine phthalate" and pure and doped "L-lysinium succinate" crystals Petrosyan AM
110 - 112	Comments on the papers recently published by Kalaivani et al. Srinivasan BR, Narvekar KU
113 - 114	Response to comments on the papers recently published by Kalaivani et al. Kalaivani D, Jayaraman D, Joseph V