Journal of Crystal Growth

Journal of Crystal Growth, Vol.441 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (19 articles)

1 - 11	Cost-effective two-stage varying-temperature rapid crystallization of zeolite T and SAPO-34 Yin XY, Chu NB, Lu XW, Li ZF, Guo H
12 - 17	Kinetics and thermodynamics of Si(111) surface nitridation in ammonia Mansurov VG, Malin TV, Galitsyn YG, Shklyaev AA, Zhuravlev KS
18 - 25	Synthesis, growth and characterization of a new organic three dimensional framework: Piperazin-1-ium 4-aminobenzenesulfonate Rekha P, Peramaiyan G, NizamMohideen M, Kumar RM, Kanagadurai R
26 - 32	Effect of Co2+ concentration on the crystal structure of electrodeposited Co nanowires Mukhtar A, Mehmood T, Khan BS, Tan M
33 - 40	Morphotropic domain structures and dielectric relaxation in piezo-/ferroelectric Pb(In1/2Nb1/2)O-3-Pb(Zn1/3Nb2/3)O-3-PbTiO3 single crystals Li T, Chen C, Ye M, Qin XM, Lin P, Xiong XB, Zeng XR, Huang HT, Ke SM
41 - 45	Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO2 sidewall spacer Im KS, Won CH, Vodapally S, Son DH, Jo YW, Park Y, Lee JH, Lee JH
46 - 51	Large-scale single-crystal growth of (CH3)(2)NH2CuCl3 for neutron scattering experiments Park G, Oh IH, Park JMS, Park SH, Hong CS, Lee KS
52 - 57	An ultra-thin compliant sapphire membrane for the growth of less strained, less defective GaN Moon D, Jang J, Choi D, Shin IS, Lee D, Bae D, Park Y, Yoon E
58 - 63	Upgrade of the hot zone for large-size high-performance multi-crystalline silicon ingot casting Wu ZY, Zhong GX, Zhou XC, Zhang ZY, Wang ZX, Chen WL, Huang XM
64 - 70	Growth of NBT-BT single crystals by flux method and their structural, morphological and electrical characterizations Kanuru SR, Baskar K, Dhanasekaran R, Kumar B
71 - 77	Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility > 35 x 10(6) cm(2)/V s in AlGaAs/GaAs quantum wells grown by MBE Gardner GC, Fallahi S, Watson JD, Manfra MJ
78 - 83	Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe Wang B, Wang C, Kohen DA, Made RI, Lee KEK, Kim T, Milakovich T, Fitzgerald EA, Yoon SF, Michel J
84 - 88	Formation of lateral nanowires by Ge deposition on Si(111) at high temperatures Shklyaev AA, Latyshev AV
89 - 94	Effect of substrate orientation on CdS homoepitaxy by molecular dynamics Almeida S, Chavez JJ, Zhou XW, Zubia D
95 - 100	Microstructure of multicrystalline silicon seeded by polysilicon chips and fluidized bed reactor granules Ekstrom KE, Stokkan G, Autruffe A, Sondena R, Dalaker H, Arnberg L, Di Sabatino M
101 - 106	Excitonic emission and absorption resonances in V0.25W0.75Se2 single crystals grown by direct vapour transport technique Solanki GK, Pataniya P, Sumesh CK, Patel KD, Pathak VM
107 - 116	Radial macrosegregation and dendrite clustering in directionally solidified Al-7Si and Al-19Cu alloys Ghods M, Johnson L, Lauer M, Grugel RN, Tewari SN, Poirier DR
117 - 123	The nucleation kinetics of ammonium metavanadate precipitated by ammonium chloride Du GC, Sun ZH, Xian Y, Jing H, Chen HJ, Yin DF
124 - 130	Improved multicrystalline silicon ingot quality using single layer silicon beads coated with silicon nitride as seed layer Babu GA, Takahashi I, Matsushima S, Usami N