Journal of Crystal Growth

Journal of Crystal Growth, Vol.449 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (26 articles)

1 - 4	Growth and structure of Cd1-xDyxTe crystals Sochinskii NV, Rubio S, Plaza JL, Dieguez E
5 - 9	Strain-driven synthesis of < 112 > direction InAs nanowires in V-grooved trenches on Si using InP/GaAs buffer layers Li SY, Zhou XL, Kong XT, Li MK, Mi JP, Wang MQ, Pan JQ
10 - 14	Deposition of thermoelectric strontium hexaboride thin films by a low pressure CVD method Tynell T, Aizawa T, Ohkubo I, Nakamura K, Mori T
15 - 21	CVD growth and properties of boron phosphide on 3C-SiC Padavala B, Frye CD, Wang XJ, Raghothamachar B, Edgar JH
22 - 26	First-principles study on stability, and growth strategies of small AlnZr (n=1-9) clusters Li Z, Zhou ZH, Wang HB, Li SL, Zhao Z
27 - 34	Wurtzite Zn1-y(MgxCd1-x)(y)O quaternary systems for photodiodes in visible spectral range Nieda Y, Suzuki M, Nakamura A, Temmyo J, Tabares G, Kurtz A, Lopez M, Ulloa JM, Hierro A, Munoz E
35 - 42	Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure Sadovyi B, Nikolenko A, Weyher JL, Grzegory I, Dziecielewski I, Sarzynski M, Strelchuk V, Tsykaniuk B, Belyaev O, Petrusha I, Turkevich V, Kapustianyk V, Albrecht M, Porowski S
43 - 46	Vapor diffusion method: Dependence of polymorphs and morphologies of calcium carbonate crystals on the depth of an aqueous solution Liu Q, Wang HS, Zeng Q
47 - 56	Effect of Co2+ doping on solubility, crystal growth and properties of ADP crystals Ganesh V, Shkir M, AlFaify S, Yahia IS
57 - 61	Reversible phase transition and relaxor behavior in Te2V2O9 single crystals grown by Czochralski technique Shet T, Varma KBR
62 - 66	Structure and magnetic properties of spinel-perovskite nanocomposite thin films on SrTiO3 (111) substrates Kim DH, Yang J, Kim MS, Kim TC
67 - 74	Shaped ceramic eutectic plates grown from the melt and their properties Benamara O, Lebbou K
75 - 85	Modeling high speed growth of large rods of cesium iodide crystals by edge-defined film-fed growth (EFG) Yeckel A
86 - 91	Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate Mitsuhara M, Watanabe N, Yokoyama H, Iga R, Shigekawa N
92 - 95	Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers Xu CX, Chen W, Pan XH, Chen SS, Ye ZZ, Huang JY
96 - 103	Effects of increasing size and changing europium activator concentration in KCaI3 scintillator crystals Lindsey AC, Zhuravleva M, Wu YT, Stand L, Loyd M, Gokhale S, Koschan M, Melcher CL
104 - 107	Features of YAG crystal growth under Ar plus CO reducing atmosphere Arhipov P, Tkachenko S, Vasiukov S, Hubenko K, Gerasymov I, Baumer V, Puzan A, Mateychenko P, Lebbou K, Sidletskiy O
108 - 113	Study of GaN doping with carbon from propane in a wide range of MOVPE conditions Lundin WV, Sakharov AV, Zavarin EE, Kazantsev DY, Ber BY, Yagovkina MA, Brunkov PN, Tsatsulnikov AF
114 - 118	Single crystal growth of Ga3Ni2 by the Czochralski method Wencka M, Pillaca M, Gille P
119 - 128	Diamond crystallization in a CO2-rich alkaline carbonate melt with a nitrogen additive Khokhryakov AF, Palyanov YN, Kupriyanov IN, Nechaev DV
129 - 133	Crystal growth by Bridgman and Czochralski method of the ferromagnetic quantum critical material YbNi4P2 Kliemt K, Krellner C
134 - 147	Macrosegregation in Al-7Si alloy caused by abrupt cross-section change during directional solidification Ghods M, Johnson L, Lauer M, Grugel RN, Tewari SN, Poirier DR
148 - 155	Metalorganic chemical vapor deposition of few-layer sp(2) bonded boron nitride films Paduano Q, Snure M, Weyburne D, Kiefer A, Siegel G, Hu JJ
156 - 162	Controlled Cu nanoparticle growth on wrinkle affecting deposition of large scale graphene Ahmed M, Uddin MJ, Rahman MA, Kishi N, Soga T
163 - 165	Comment on "Investigations of interstitial generations near growth interface depending on crystal pulling rates during CZ silicon growth by detaching from the melt" by T. Abe et al. [J. Cryst. Growth 434 (2016) 128-137] and on "Observations of secondary defects and vacancies in CZ silicon crystals detached from melt using four different types of characterization technique" by T. Abe et al. [J. Cryst. Growth 436 (2016) 23-33] Discussion Vanhellemont J, Kamiyama E, Nakamura K, Sueoka K
166 - 168	Refutation for the comment on our papers by Jan Vanhellemont et al. Takahashi T, Abe T, Shirai K