Journal of Crystal Growth

Journal of Crystal Growth, Vol.452 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (53 articles)

1 - 5	Analysis of particle engulfment during the growth of crystalline silicon Tao YT, Yeckel A, Derby JJ
6 - 11	Numerical simulation of the oxygen concentration distribution in silicon melt for different crystal lengths during Czochralski growth with a transverse magnetic field Chen JC, Chiang PY, Nguyen THT, Hu C, Chen CH, Liu CC
12 - 16	A fundamental limitation on growth rates in the traveling heater method Peterson JH, Yeckel A, Derby JJ
17 - 21	Analysis of the effects of a rotating magnetic field on the growth of cadmium zinc telluride by the traveling heater method under microgravity conditions Li ZY, Peterson JH, Yeckel A, Derby JJ
22 - 26	Analysis of the effect of symmetric/asymmetric CUSP magnetic fields on melt/crystal interface during Czochralski silicon growth Daggolu P, Ryu JW, Galyukov A, Kondratyev A
27 - 34	Effects of the hot zone design during the growth of large size multi-crystalline silicon ingots by the seeded directional solidification process Nguyen THT, Liao SH, Chen JC, Chen CH, Huang YH, Yang CJ, Lin HW, Nguyen HB
35 - 38	Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H-SiC wafers Yang Y, Guo JQ, Goue O, Raghothamachar B, Dudley M, Chung G, Sanchez E, Quast J, Manning I, Hansen D
39 - 43	Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H-SiC crystals grown by PVT method Guo JQ, Yang Y, Wu FZ, Sumakeris J, Leonard R, Goue O, Raghothamachar B, Dudley M
44 - 48	World's largest sapphire for many applications Khattak CP, Shetty R, Schwerdtfeger CR, Ullal S
49 - 53	Advances in crystal growth, device fabrication and characterization of thallium bromide detectors for room temperature applications Datta A, Moed D, Becla P, Overholt M, Motakef S
54 - 56	Investigation of ionic conductivity of lanthanum cerium oxide nano crystalline powder synthesized by co precipitation method Tinwala H, Shah P, Siddhapara K, Shah D, Menghani J
57 - 64	Czochralski growth of 2 in. Ce-doped (La,Gd)(2)Si2O7 for scintillator application Yoshikawa A, Shoji Y, Kurosawa S, Chani VI, Murakami R, Horiai T, Kamada K, Yokota Y, Ohashi Y, Kochurikhin V
65 - 68	Crystal growth and scintillation properties of Lu substituted CeBr3 single crystals Ito T, Yokota Y, Kurosawa S, Kral R, Kamada K, Pejchal J, Ohashi Y, Yoshikawa A
69 - 72	Growth of shape-controlled Ce:Y3Al5O12 scintillator crystal and their scintillation properties Yokota Y, Kurosawa S, Ohasi Y, Kamada K, Yoshikawa A
73 - 80	Growth of 2 Inch Eu-doped SrI2 single crystals for scintillator applications Yoshikawa A, Shoji Y, Yokota Y, Kurosawa S, Hayasaka S, Chani VI, Ito T, Kamada K, Ohashi Y, Kochurikhin V
81 - 84	Growth and scintillation properties of 3 in. diameter Ce doped Gd3Ga3Al2O12 scintillation single crystal Kamada K, Shoji Y, Kochurikhin VV, Okumura S, Yamamoto S, Nagura A, Yeom JY, Kurosawa S, Yokota Y, Ohashi Y, Nikl M, Yoshikawa A
85 - 88	Growth and scintillation properties of Li and Ce co-doped Lu3Al5O12 scintillator Kamada K, Nikl M, Kurosawa S, Beitlerova A, Nagura A, Shoji Y, Pejchal J, Ohashi Y, Yokota Y, Yoshikawa A
89 - 94	Investigation of the unique degradation phenomenon observed in CsSrBr3: Eu 5% scintillator crystals Gokhale SS, Loyd M, Stand L, Lindsey A, Swider S, Zhuravleva M, Melcher CL
95 - 100	Luminescent properties of Cr-doped gallium garnet crystals grown by the micro-pulling-down method Kurosawa S, Suzuki A, Yamaji A, Kamada K, Pejchal J, Ohashi Y, Yokota Y, Chani VI, Yoshikawa A
101 - 104	Yb3+-doped LiBi(WO4)(2) single crystals fibers grown by micro-pulling down technique and characterization Rekik B, Derbal M, Lebbou K, Benammar MEA
105 - 110	Growth and properties of 4-in. diameter ferroelectric single crystal Pb (In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 by the seed-induced modified Bridgman technique Wang X, Lin D, Wang S, Chen JW, Xu HQ, Li XB, Zhao XY, Luo HS
111 - 116	Hydrothermal growth of fine magnetite and ferrite crystals Byrappa S, Vicas CS, Dhanaraj N, Namratha K, Keerthana SD, Dey R, Byrappa K
117 - 124	Influence of Co-substitution on the structural and magnetic properties of nanocrystalline Ba0.5Sr0.5Fe12O19 Vizhi RE, Harikrishnan V, Saravanan P, Babu DR
125 - 130	High-temperature solution growth and vapour transport equilibration of (1-x)K1-yNaYNbO3-xLiNbO(3) lead-free piezo-/ferroelectric single crystals Wong JYY, Zhang N, Ye ZG
131 - 134	Discussion on the purity and the crystallization of CZTS compound Tablaoui M, Derbal M, Lebbou K
135 - 140	Czochralski growth of 2 in. Ca3Ta(Ga,Al)(3)Si2O14 single crystals for piezoelectric applications Yoshikawa A, Shoji Y, Ohashi Y, Yokota Y, Chani VI, Kitahara M, Kudo T, Kamada K, Kurosawa S, Medvedev A, Kochurikhin V
141 - 145	Chemical composition characterization of Ca3Ta(Ga0.5Al0.5)(3)Si2O14 single crystal by the line-focus-beam ultrasonic material characterization system Ohashi Y, Kudo T, Yokota Y, Shoji Y, Kurosawa S, Kamada K, Yoshikawa A
146 - 150	Crystal growth and phase stability of Ln:Lu2O3 (Ln=Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb) in a higher-temperature hydrothermal regime McMillen CD, Sanjeewa LD, Moore CA, Brown DC, Kolis JW
151 - 157	Synthesis, characterization and chemical stability of silicon dichalcogenides, Si(SexS1-x)(2) Chen C, Zhang XT, Krishna L, Kendrick C, Shang SL, Toberer E, Liu ZK, Tamboli A, Redwing JM
158 - 161	Study of photocatalytic activity and magnetic properties of Co, Mn metal ions doped nanocrystalline TiO2 prepared by Sol-Gel method Siddhapara K, Shah D
162 - 165	Growth of N-benzyl-2-methyl-4-nitroaniline (BNA) single crystal fibers by micro-pulling down method Kamada K, Takida Y, Minamide H, Shoji Y, Kurosawa S, Yokota Y, Ohashi Y, Yoshikawa A
166 - 171	Effect of inorganic additives on the growth of silica-carbonate biomorphs Nakouzi E, Rendina R, Palui G, Steinbock O
172 - 178	A crystallization technique for obtaining large protein crystals with increased mechanical stability using agarose gel combined with a stirring technique Maruyama M, Hayashi Y, Yoshikawa HY, Okada S, Koizumi H, Tachibana M, Sugiyama S, Adachi H, Matsumura H, Inoue T, Takano K, Murakami S, Yoshimura M, Mori Y
179 - 183	A systematic study of hydroxyethylammonium p-nitrophenolate single crystal exhibiting third order nonlinearity Sudharsana N, Hamad S, Rao SV, Krishnakumar V, Nagalakshmi R
184 - 188	Nucleation kinetics, growth and characterization of sodium tetraborate decahydrate - second harmonic generation in centrosymmetric crystal Vizhi RE
189 - 197	(E)-N'-(4-chlorobenzylidene)-4-methylbenzenesulfonohydrazide (4CBTH) -Synthesis and characterization of organic NLO crystal Balaji J, Prabu S, Srinivasan P
198 - 203	Investigations on the growth and characterization of gamma-glycine single crystal in the presence of sodium bromide Vizhi RE, Yogambal C
204 - 212	Bulk growth and characterization of novel organic piperazinium (bis) hydrogen succinate single crystals Vizhi RE, Vijayalakshmi M
213 - 219	Synthesis, growth, optical and mechanical studies of ferroelectric urea-oxalic acid single crystals Vizhi RE, Dhivya R, Babu DR
220 - 225	Growth and characterization of morpholinium dihydrogenphosphate single crystal Babu DR, Arul H, Vizhi RE
226 - 229	Analysis of TMGa output of on-board cylinders for chemical vapor deposition Woelk E, DiCarlo R
230 - 234	Hybrid physical-chemical vapor deposition of Bi2Se3 films Brom JE, Weiss L, Choudhury TH, Redwing JM
235 - 239	Surfaces and interfaces governing the OMVPE growth of APD-free GaP on AsH3-cleaned vicinal Si(100) McMahon WE, Warren EL, Kibbler AE, France RM, Norman AG, Reedy RC, Olson JM, Tamboli AC, Stradins P
240 - 243	Experimental study of growth mechanism of GaAs microchannel epitaxy -Study of pinning effect of Si-doping Mizuno Y, Tomita M, Takakura H, Iwakawa M, Kambayashi D, Maruyama T, Naritsuka S
244 - 247	Study towards integration of In0.53Ga0.47As on 300 mm Si for CMOS sub-7 nm node: Development of thin graded InxGa1-xAs buffers on GaAs Mols Y, Kunert B, Gaudin G, Langer R, Caymax M
248 - 252	Controlled faceting and morphology for light trapping in aluminum-catalyzed silicon nanostructures Hainey MF, Chen C, Ke Y, Black MR, Redwing JM
253 - 257	In-situ control of large area (11-22)-GaN growth on patterned r-plane sapphire Brunner F, Edokam F, Weyers M
258 - 262	MOVPE growth of laser structures for high-power applications at different ambient temperatures Bugge F, Crump P, Frevert C, Knigge S, Wenzel H, Erbert G, Weyers M
263 - 267	Sensitivity of quantum cascade laser performance to thickness and doping variations Siriani DF, Wang CA, Donnelly JP, Connors MK, Missaggia LJ, Calawa DR, McNulty D, Zheng MC, Mansuripur TS, Capasso F
268 - 271	Regrowth of quantum cascade laser active regions on metamorphic buffer layers Rajeev A, Mawst LJ, Kirch JD, Botez D, Miao J, Buelow P, Kuech TF, Li XQ, Sigler C, Babcock SE, Earles T
272 - 275	On the potential and limits of large area seeding for photovoltaic silicon Stoddard N, Grundig-Wendrock B, Krause A, Oriwol D, Bertoni M, Naerland TU, Witting I, Sylla L
276 - 280	Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics Kim H, Forghani K, Guan Y, Kim K, Wood AW, Lee J, Babcock SE, Kuech TF, Mawst LJ
VIII - VIII	Preface Qiu R, Caneau C, Paskova T